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    • 6. 发明授权
    • Electrochromic device and method of manufacturing the same
    • 电致变色装置及其制造方法
    • US08363302B2
    • 2013-01-29
    • US13064578
    • 2011-04-01
    • Chang Ho NohSeog Jin JeonRupasree Ragini DasSeon-Jeong Lim
    • Chang Ho NohSeog Jin JeonRupasree Ragini DasSeon-Jeong Lim
    • G02F1/153G02F1/15
    • C25D15/00C25D5/48C25D5/50G02F1/1506G02F1/1523
    • Disclosed is an electrochromic device that includes a first electrode and a second electrode facing each other, an electrochromic layer between the first electrode and the second electrode, and an electrolyte between the first electrode and the second electrode and being in contact with the electrochromic layer. The electrochromic layer may include a plurality of oxide semiconductor particles, a metal oxide on the surface of the oxide semiconductor particles, and an electrochromic material. An energy bandgap of the oxide semiconductor particles is in a range of about 3 eV to about 5 eV and an energy bandgap of the metal oxide is in a range of about 3 eV to about 5 eV, and a difference of conduction band energy levels of the oxide semiconductor particles and the metal oxide is about 0.5 eV or less. A method of manufacturing the electrochromic device may also be provided.
    • 公开了一种电致变色装置,其包括彼此面对的第一电极和第二电极,第一电极和第二电极之间的电致变色层,以及在第一电极和第二电极之间并与电致变色层接触的电解质。 电致变色层可以包括多个氧化物半导体颗粒,氧化物半导体颗粒表面上的金属氧化物和电致变色材料。 氧化物半导体颗粒的能带隙在约3eV至约5eV的范围内,并且金属氧化物的能带隙在约3eV至约5eV的范围内,导带能级差 氧化物半导体颗粒和金属氧化物为约0.5eV以下。 还可以提供一种制造电致变色器件的方法。