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1. 发明授权

US10177279B2 Light-emitting diode with multiple N contact structure 有权
公开(公告)号：US10177279B2
公开(公告)日：2019-01-08
申请号：US15608141
申请日：2017-05-30
申请人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
发明人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
IPC分类号： H01L33/10 , H01L33/38 , H01L33/24
摘要： Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

2. 发明申请

US20170352784A1 LIGHT-EMITTING DIODE WITH MULTIPLE N CONTACT STRUCTURE 审中-公开
公开(公告)号：US20170352784A1
公开(公告)日：2017-12-07
申请号：US15608141
申请日：2017-05-30
申请人： Tae Yeon SEONG , Ki Seok KIM , Junyong JIN
发明人： Tae Yeon SEONG , Ki Seok KIM , Junyong JIN
IPC分类号： H01L33/32 , H01L33/38 , H01L33/00 , H01L33/10
CPC分类号： H01L33/382 , H01L33/10 , H01L33/24 , H01L2933/0016
摘要： Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

3. 发明授权

US08932890B2 Vertical-structure semiconductor light emitting element and a production method therefor 有权
标题翻译：垂直结构半导体发光元件及其制造方法
公开(公告)号：US08932890B2
公开(公告)日：2015-01-13
申请号：US13505618
申请日：2010-11-23
申请人： Tae Yeon Seong
发明人： Tae Yeon Seong
IPC分类号： H01L21/00 , H01L33/64 , H01L33/00
CPC分类号： H01L33/647 , H01L33/0079
摘要： The present invention relates to a vertical-structure semiconductor light emitting device and a production method thereof, more specifically, to a vertical-structure semiconductor light emitting device having a high-performance heat sink support comprising a thick metal film or metal foil. The vertical-structure semiconductor light emitting element produced in accordance with the present invention constitutes a highly reliable light emitting element with absolutely no thermal or mechanical damage since it has the high performance heatsink support and so suffers not fine micro-cracking and can be freely subjected to heat treatment and to post-processing including of a side-surface passivation thin film.
摘要翻译：垂直结构半导体发光器件及其制造方法技术领域本发明涉及垂直结构半导体发光器件及其制造方法，更具体地说，涉及具有厚金属膜或金属箔的高性能散热器支撑体的垂直结构半导体发光器件。根据本发明制造的垂直结构半导体发光元件构成了高度可靠的发光元件，绝对没有热或机械损伤，因为它具有高性能的散热器支撑，因此不会发生微细微裂纹并且可以自由地受到影响进行热处理和后处理，包括侧表面钝化薄膜。

4. 发明授权

US08809895B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08809895B2
公开(公告)日：2014-08-19
申请号：US13175549
申请日：2011-07-01
申请人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji hyung Moon , Se Yeon Jung , Tae-Yeon Seong
发明人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji hyung Moon , Se Yeon Jung , Tae-Yeon Seong
IPC分类号： H01L33/14 , H01L33/46 , H01L33/64
CPC分类号： H01L33/14 , H01L33/16 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being formed of a semiconductor material. Also, the light emitting device further includes a current spreading layer comprising a plurality of carbon nanotube bundles physically connected to each other on one of the first and second conductive type semiconductor layers.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，有源层由半导体材料形成。此外，发光器件还包括电流扩展层，其包括在第一和第二导电类型半导体层中的一个上彼此物理连接的多个碳纳米管束。

5. 发明申请

US20110198652A1 LOW RESISTANCE ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME 失效
标题翻译：低电阻电极和化合物半导体发光器件，包括它们
公开(公告)号：US20110198652A1
公开(公告)日：2011-08-18
申请号：US13095487
申请日：2011-04-27
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L33/60 , B82Y99/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

6. 发明申请

US20110127567A1 SUPPORTING SUBSTRATE FOR PREPARING SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUPPORTING SUBSTRATES 审中-公开
标题翻译：用于制备半导体发光器件的支撑衬底和使用支撑衬底的半导体发光器件
公开(公告)号：US20110127567A1
公开(公告)日：2011-06-02
申请号：US12995998
申请日：2009-06-02
申请人： Tae Yeon Seong
发明人： Tae Yeon Seong
IPC分类号： H01L33/02
CPC分类号： H01L33/0075 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/48 , H01L33/60 , H01L33/64 , H01L33/641 , H01L33/642
摘要： The present invention is related to a supporting substrate for preparing a semiconductor light-emitting device employing a multi-layered light-emitting structure thin-film and a method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device. The supporting substrate for preparing a semiconductor light-emitting device is formed by successively laminating a sacrificial layer, a heat-sink layer and a bonding layer on a selected supporting substrate. A method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device includes: preparing a first wafer in which a semiconductor multi-layered light-emitting structure is laminated/grown on an upper part of an initial substrate; preparing a second wafer which is a supporting substrate for preparing a semiconductor light-emitting device; bonding the second wafer on an upper part of the first wafer; separating the initial substrate of the first wafer from a result of the bonding; performing passivation after forming a first ohmic contact electrode on an upper part of the first wafer from which the initial substrate is separated; and preparing a single-chip by severing a result of the passivation.
摘要翻译：本发明涉及一种用于制备采用多层发光结构薄膜的半导体发光器件的支撑衬底和一种制备半导体发光器件的方法，所述半导体发光器件采用该支撑衬底来制备半导体发光器件，发光装置。用于制备半导体发光器件的支撑衬底通过在所选择的支撑衬底上依次层叠牺牲层，散热层和结合层而形成。一种制备半导体发光装置的半导体发光装置的制备方法，其特征在于，包括：准备半导体多层发光结构体的第一晶片，所述第一晶片在初始基质; 制备作为用于制备半导体发光器件的支撑衬底的第二晶片; 将第二晶片接合在第一晶片的上部; 从第一晶片的初始衬底与接合的结果分离; 在从其分离初始衬底的第一晶片的上部形成第一欧姆接触电极之后进行钝化; 并通过切断钝化的结果来制备单芯片。

7. 发明授权

US07666693B2 Top-emitting nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：顶部发射氮化物基发光器件及其制造方法
公开(公告)号：US07666693B2
公开(公告)日：2010-02-23
申请号：US12180312
申请日：2008-07-25
申请人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
发明人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
摘要翻译：提供了一种顶发射N型发光器件及其制造方法。该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。改性金属层由Ag基材料形成。

8. 发明申请

US20090269869A1 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法
公开(公告)号：US20090269869A1
公开(公告)日：2009-10-29
申请号：US12458136
申请日：2009-07-01
申请人： June-o SONG , Tae-yeon SEONG , Kyoung-kook KIM , Hyun-gi HONG , Kwang-ki CHOI , Hyun-soo KIM
发明人： June-o SONG , Tae-yeon SEONG , Kyoung-kook KIM , Hyun-gi HONG , Kwang-ki CHOI , Hyun-soo KIM
IPC分类号： H01L33/00 , H01L21/283
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
摘要翻译：提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

9. 发明授权

US07491564B2 Flip-chip nitride light emitting device and method of manufacturing thereof 有权
标题翻译：倒装氮化物发光器件及其制造方法
公开(公告)号：US07491564B2
公开(公告)日：2009-02-17
申请号：US11698193
申请日：2007-01-26
申请人： Tae-yeon Seong , June-o Song
发明人： Tae-yeon Seong , June-o Song
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32
摘要： A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.
摘要翻译：提供了一种倒装芯片发光器件及其制造方法。倒装氮化物发光器件包括依次堆叠的衬底，n型覆盖层，有源层，ap型覆盖层，多欧姆接触层和反射层，其中多欧姆接触通过重复堆叠重整金属层和透明导电薄膜的至少一个堆叠单元获得层，其中重整金属层主要含有银（Ag）。根据倒装芯片发光器件及其制造方法，由于能够提高与p型覆盖层相关的欧姆接触特性，所以能够提高封装工序中的引线接合效率和收率。此外，由于可以获得低的非接触电阻和良好的电流 - 电压特性，所以可以提高发光效率并延长倒装芯片发光器件的使用寿命。

10. 发明授权

US07485479B2 Nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US07485479B2
公开(公告)日：2009-02-03
申请号：US11649236
申请日：2007-01-04
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
摘要翻译：提供一种氮化物系发光器件及其制造方法。氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

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