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1. 发明授权

US08384099B2 GaN based LED having reduced thickness and method for making the same 失效
标题翻译：具有减小厚度的GaN基LED及其制造方法
公开(公告)号：US08384099B2
公开(公告)日：2013-02-26
申请号：US12860162
申请日：2010-08-20
申请人： Steven D. Lester , Frank T. Shum
发明人： Steven D. Lester , Frank T. Shum
IPC分类号： H01L29/206
CPC分类号： H01L33/0079 , H01L33/22
摘要： A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 μm. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.
摘要翻译：公开了一种具有载体，发光结构以及第一和第二电极的装置。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当来自n型GaN层的电子和空穴以及有源层发射预定波长的光的有源层和 p型GaN层分别结合在一起。第一和第二电极结合到不与有源层相邻的p型和n型GaN层的表面。 n型GaN层的厚度小于1.25μm。在n型GaN层的薄化期间，载体与发光结构结合。减薄的发光结构可以转移到第二载体以提供类似于在LED的顶表面上具有接触的常规LED的装置。

2. 发明授权

US07863626B2 Surface mountable chip 有权
标题翻译：表面贴装芯片
公开(公告)号：US07863626B2
公开(公告)日：2011-01-04
申请号：US12614430
申请日：2009-11-08
申请人： Frank T. Shum
发明人： Frank T. Shum
IPC分类号： H01L27/15
CPC分类号： H01L33/486 , H01L33/382 , H01L33/385 , H01L33/62 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2933/0066 , H01S5/02272 , H01S5/423 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surface includes a top electrode bonded to the bottom contact, and the bottom base surface includes first and second bottom electrodes that are electrically isolated from one another. The top electrode is connected to the first bottom electrode, and the second bottom electrode is connected to the top contact by a vertical conductor. An insulating layer is bonded to a surface of the circuit device and covers a portion of a vertical surface of the bottom layer. The vertical conductor includes a layer of metal bonded to the insulating layer.
摘要翻译：一种具有电路装置和基座部分的可表面安装的装置。电路装置包括分别具有顶部触点和底部触点的顶层和底层。基部包括具有顶部基面和底部底面的基底。顶部基面包括结合到底部触点的顶部电极，底部底表面包括彼此电隔离的第一和第二底部电极。顶部电极连接到第一底部电极，第二底部电极通过垂直导体连接到顶部触点。绝缘层结合到电路器件的表面并且覆盖底层的垂直表面的一部分。垂直导体包括结合到绝缘层的金属层。

3. 发明申请

US20100052003A1 Surface Mountable Chip 有权
标题翻译：表面贴装芯片
公开(公告)号：US20100052003A1
公开(公告)日：2010-03-04
申请号：US12614430
申请日：2009-11-08
申请人： Frank T. Shum
发明人： Frank T. Shum
IPC分类号： H01L23/00
CPC分类号： H01L33/486 , H01L33/382 , H01L33/385 , H01L33/62 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2933/0066 , H01S5/02272 , H01S5/423 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surface includes a top electrode bonded to the bottom contact, and the bottom base surface includes first and second bottom electrodes that are electrically isolated from one another. The top electrode is connected to the first bottom electrode, and the second bottom electrode is connected to the top contact by a vertical conductor. An insulating layer is bonded to a surface of the circuit device and covers a portion of a vertical surface of the bottom layer. The vertical conductor includes a layer of metal bonded to the insulating layer.
摘要翻译：一种具有电路装置和基座部分的可表面安装的装置。电路装置包括分别具有顶部触点和底部触点的顶层和底层。基部包括具有顶部基面和底部底面的基底。顶部基面包括结合到底部触点的顶部电极，底部底表面包括彼此电隔离的第一和第二底部电极。顶部电极连接到第一底部电极，第二底部电极通过垂直导体连接到顶部触点。绝缘层结合到电路器件的表面并且覆盖底层的垂直表面的一部分。垂直导体包括结合到绝缘层的金属层。

4. 发明授权

US08026524B2 LEDs with low optical loss electrode structures 有权
标题翻译：具有低光损耗电极结构的LED
公开(公告)号：US08026524B2
公开(公告)日：2011-09-27
申请号：US12888360
申请日：2010-09-22
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L27/15 , H01L29/74
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： Semiconductor devices in which one or more LEDs are formed include a dielectric region formed on a n/p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.
摘要翻译：其中形成一个或多个LED的半导体器件包括形成在半导体的n / p区域上的电介质区域，并且金属电极可以在电介质材料的区域（至少部分地）上形成。由于金属电极通过一种或多种介电材料和透明欧姆与半导体的物理接触分离，所以可以使用诸如氧化铟锡的材料的透明层来在半导体和金属电极之间形成欧姆接触接触层（例如，ITO层）。介电材料可以增强光的全内反射并减少由金属电极吸收的光量。

5. 发明申请

US20100213495A1 ELECTRODE STRUCTURES FOR LEDS WITH INCREASED ACTIVE AREA 有权
公开(公告)号：US20100213495A1
公开(公告)日：2010-08-26
申请号：US12772767
申请日：2010-05-03
申请人： Frank T. Shum
发明人： Frank T. Shum
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44
摘要： An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. The semiconductor material can have a cutout formed therein and a portion of the electrode can be formed outside of the cutout and a portion of the electrode can be formed inside of the cutout. The portion of the electrode outside the cutout can be electrically isolated from the semiconductor material by the dielectric material.

6. 发明申请

US20080303053A1 GaN Based LED Having Reduced Thickness and Method for Making the Same 有权
标题翻译：具有降低厚度的GaN基LED及其制造方法
公开(公告)号：US20080303053A1
公开(公告)日：2008-12-11
申请号：US11761223
申请日：2007-06-11
申请人： Steven D. Lester , Frank T. Shum
发明人： Steven D. Lester , Frank T. Shum
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22
摘要： A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 μm. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.
摘要翻译：公开了一种具有载体，发光结构以及第一和第二电极的装置。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当来自n型GaN层的电子和空穴以及有源层发射预定波长的光的有源层和 p型GaN层分别结合在一起。第一和第二电极结合到不与有源层相邻的p型和n型GaN层的表面。 n型GaN层的厚度小于1.25μm。在n型GaN层的薄化期间，载体与发光结构结合。减薄的发光结构可以转移到第二载体以提供类似于在LED的顶表面上具有接触的常规LED的装置。

7. 发明授权

US08124433B2 Low optical loss electrode structures for LEDs 有权
标题翻译：用于LED的低光损耗电极结构
公开(公告)号：US08124433B2
公开(公告)日：2012-02-28
申请号：US12700576
申请日：2010-02-04
申请人： Frank T. Shum , William W. So , Steven B. Lester
发明人： Frank T. Shum , William W. So , Steven B. Lester
IPC分类号： H01L21/00 , H01L29/74
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.
摘要翻译：公开了一种用于增强LED的亮度和/或效率的电极结构。电极结构可以具有形成在电极和发光半导体材料之间的金属电极和光学透射的厚电介质材料。电极和厚电介质配合以将来自半导体材料的光反射回半导体，以增强光最终从半导体材料透射的可能性。这种LED可以具有增强的效用，并且可以适用于诸如一般照明的用途。

8. 发明授权

US08115226B2 Low optical loss electrode structures for LEDs 有权
标题翻译：用于LED的低光损耗电极结构
公开(公告)号：US08115226B2
公开(公告)日：2012-02-14
申请号：US12888293
申请日：2010-09-22
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an dielectric material formed intermediate the electrode and a light emitting semiconductor material. Electrical continuity between the semiconductor material and the metal electrode is provided by an optically transmissive ohmic contact layer, such as a layer of Indium Tin Oxide. The metal electrode thus can be physically separated from the semiconductor material by one or more of the dielectric material and the ohmic contact layer. The dielectric layer can increase total internal reflection of light at the interface between the semiconductor and the dielectric layer, which can reduce absorption of light by the electrode. Such LED can have enhanced utility and can be suitable for uses such as general illumination.
摘要翻译：公开了一种用于增强LED的亮度和/或效率的电极结构。电极结构可以具有在电极之间形成的金属电极和电介质材料以及发光半导体材料。半导体材料和金属电极之间的电连续性由诸如氧化铟锡的光学透射欧姆接触层提供。金属电极因此可以通过一种或多种介电材料和欧姆接触层与半导体材料物理分离。电介质层可以增加半导体和电介质层之间的界面处的光的全内反射，这可以减少电极对光的吸收。这种LED可以具有增强的效用，并且可以适用于诸如一般照明的用途。

9. 发明授权

US08114690B2 Methods of low loss electrode structures for LEDs 有权
标题翻译： LED低损耗电极结构的方法
公开(公告)号：US08114690B2
公开(公告)日：2012-02-14
申请号：US12888379
申请日：2010-09-22
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L33/00 , H01L29/74 , H01L27/15
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： Aspects concerning a method of making electrical contact to a region of semiconductor in which one or more LEDs are formed include that a dielectric region can be formed on a p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.
摘要翻译：涉及与其中形成一个或多个LED的半导体区域进行电接触的方法的方面包括可以在半导体的ap区域上形成电介质区域，并且金属电极可以形成在（至少部分地）电介质材料的区域。由于金属电极通过一种或多种介电材料和透明欧姆与半导体的物理接触分离，所以可以使用诸如氧化铟锡的材料的透明层来在半导体和金属电极之间形成欧姆接触接触层（例如，ITO层）。介电材料可以增强光的全内反射并减少由金属电极吸收的光量。

10. 发明授权

US08080879B2 Electrode structures for LEDs with increased active area 有权
标题翻译：具有增加的有效面积的LED的电极结构
公开(公告)号：US08080879B2
公开(公告)日：2011-12-20
申请号：US12772767
申请日：2010-05-03
申请人： Frank T. Shum
发明人： Frank T. Shum
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44
摘要： An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. The semiconductor material can have a cutout formed therein and a portion of the electrode can be formed outside of the cutout and a portion of the electrode can be formed inside of the cutout. The portion of the electrode outside the cutout can be electrically isolated from the semiconductor material by the dielectric material.
摘要翻译：公开了一种用于增强LED的亮度和/或效率的电极结构。电极结构可以具有形成在电极和发光半导体材料之间的金属电极和光学透射的厚电介质材料。电极和厚电介质配合以将来自半导体材料的光反射回半导体，以增强光最终从半导体材料透射的可能性。这种LED可以具有增强的效用，并且可以适用于诸如一般照明的用途。半导体材料可以具有形成在其中的切口，并且电极的一部分可以形成在切口外侧，并且电极的一部分可以形成在切口内部。切口外部的电极部分可以通过电介质材料与半导体材料电绝缘。

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