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1. 发明授权

US08729580B2 Light emitter with metal-oxide coating 有权
标题翻译：具有金属氧化物涂层的发光体
公开(公告)号：US08729580B2
公开(公告)日：2014-05-20
申请号：US11296006
申请日：2005-12-06
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/32 , H01L33/44
摘要： A light emitting device based on a AlInGaN materials system wherein a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2. In a preferred embodiment the coating is made from Ta2O5, Nb2O5, TiO2, or SiC and has a thickness between about 0.01 and 10 microns. A surface of a coating material may be textured or shaped to increase its surface area and improve light extraction. A surface of the coating material can also be shaped to engineer the directionality of light escaping the layer. A coating can be applied directly to a surface or multiple surfaces of a light emitting device or can be applied onto a contact material. A coating may also serve as a passivation or protection layer for a device.
摘要翻译：一种基于AlInGaN材料系统的发光器件，其中使用涂层来改善从器件提取光。涂层具有非常低的光学损耗和大于2的折射率。在优选实施例中，涂层由Ta 2 O 5，Nb 2 O 5，TiO 2或SiC制成，并且具有约0.01至10微米的厚度。涂层材料的表面可以被纹理化或成形以增加其表面积并改善光提取。涂层材料的表面也可以被成形为设计逃逸层的光的方向性。涂层可以直接施加到发光器件的表面或多个表面，或者可以施加到接触材料上。涂层还可以用作器件的钝化或保护层。

2. 发明授权

US08309972B2 LEDs with efficient electrode structures 有权
标题翻译：具有高效电极结构的LED
公开(公告)号：US08309972B2
公开(公告)日：2012-11-13
申请号：US13358114
申请日：2012-01-25
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L27/15 , H01L29/74
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： Aspects include electrodes that provide specified reflectivity attributes for light generated from an active region of a Light Emitting Diode (LED). LEDs that incorporate such electrode aspects. Other aspects include methods for forming such electrodes, LEDs including such electrodes, and structures including such LEDs.
摘要翻译：方面包括为从发光二极管（LED）的有源区域产生的光提供特定的反射率属性的电极。结合这种电极方面的LED。其他方面包括形成这种电极的方法，包括这种电极的LED以及包括这种LED的结构。

3. 发明申请

US20120056193A1 Series Connected Segmented LED 有权
标题翻译：串联连接分段LED
公开(公告)号：US20120056193A1
公开(公告)日：2012-03-08
申请号：US13292938
申请日：2011-11-09
申请人： Steven D. Lester , Chih-Wei Chuang
发明人： Steven D. Lester , Chih-Wei Chuang
IPC分类号： H01L33/60 , H01L33/32
CPC分类号： H01L33/08 , H01L27/153 , H01L33/0079 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/24
摘要： A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment.
摘要翻译：公开了一种光源及其制造方法。光源包括导电衬底和被分成段的发光结构。发光结构包括沉积在衬底上的第一导电类型的第一层半导体材料，覆盖第一层的有源层和覆盖有源层的第一导电类型的相反导电类型的第二半导体材料层。障碍物将发光结构分成彼此电隔离的第一和第二段。串联连接电极将第一段中的第一层连接到第二段中的第二层。电源触头电连接到第一段中的第二层，以及电连接到第二段中的第一层的第二电源触头。

4. 发明申请

US20120032183A1 GaN Based LED having Reduced Thickness and Method for Making the Same 失效
标题翻译：具有降低厚度的GaN基LED及其制造方法
公开(公告)号：US20120032183A1
公开(公告)日：2012-02-09
申请号：US12860162
申请日：2010-08-20
申请人： Steven D. Lester , Frank T. Shum
发明人： Steven D. Lester , Frank T. Shum
IPC分类号： H01L33/22
CPC分类号： H01L33/0079 , H01L33/22
摘要： A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 μm. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.
摘要翻译：公开了一种具有载体，发光结构以及第一和第二电极的装置。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当来自n型GaN层的电子和空穴以及有源层发射预定波长的光的有源层和 p型GaN层分别结合在一起。第一和第二电极结合到不与有源层相邻的p型和n型GaN层的表面。 n型GaN层的厚度小于1.25μm。在n型GaN层的薄化期间，载体与发光结构结合。减薄的发光结构可以转移到第二载体以提供类似于在LED的顶表面上具有接触的常规LED的装置。

5. 发明申请

US20110006332A1 LEDs with LOW OPTICAL LOSS ELECTRODE STRUCTURES 有权
标题翻译：具有低光学损伤电极结构的LED
公开(公告)号：US20110006332A1
公开(公告)日：2011-01-13
申请号：US12888360
申请日：2010-09-22
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L33/46 , H01L33/36
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： Semiconductor devices in which one or more LEDs are formed include a dielectric region formed on a n/p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.
摘要翻译：其中形成一个或多个LED的半导体器件包括形成在半导体的n / p区域上的电介质区域，并且金属电极可以在电介质材料的区域（至少部分地）上形成。由于金属电极通过一种或多种介电材料和透明欧姆与半导体的物理接触分离，所以可以使用诸如氧化铟锡的材料的透明层来在半导体和金属电极之间形成欧姆接触接触层（例如，ITO层）。介电材料可以增强光的全内反射并减少由金属电极吸收的光量。

6. 发明授权

US07847297B2 Ohmic contact on p-type GaN 失效
标题翻译： p型GaN上的欧姆接触
公开(公告)号：US07847297B2
公开(公告)日：2010-12-07
申请号：US12356310
申请日：2009-01-20
申请人： Jeffrey N Miller , David P Bour , Virginia M Robbins , Steven D Lester
发明人： Jeffrey N Miller , David P Bour , Virginia M Robbins , Steven D Lester
IPC分类号： H01L29/15
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

7. 发明申请

US20100133562A1 High Brightness LED Utilizing a Roughened Active Layer and Conformal Cladding 有权
标题翻译：高亮度LED利用粗化的有源层和保形包层
公开(公告)号：US20100133562A1
公开(公告)日：2010-06-03
申请号：US12545358
申请日：2009-08-21
申请人： Ling Zhang , Steven D. Lester , Jeffrey C. Ramer
发明人： Ling Zhang , Steven D. Lester , Jeffrey C. Ramer
IPC分类号： H01L33/00 , H01L21/302
CPC分类号： H01L33/24 , H01L33/007
摘要： A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.
摘要翻译：公开了一种发光器件及其制造方法。该装置包括设置在第一和第二层之间的有源层。第一层具有顶部和底部表面。顶表面包括第一导电类型的第一材料，其包括在基本上平坦的表面中的多个凹坑。有源层覆盖第一层的顶表面并且与顶表面相符，有源层产生以空穴和电子在其中复合的波长为特征的光。第二层包括第二导电类型的第二材料，第二层覆盖有源层并且符合有源层。该器件可以构建在具有与第一材料的晶格常数充分不同的晶格常数的衬底上，以产生用于形成凹坑的第一层中的位错。

8. 发明申请

US20100032703A1 EDGE-EMITTING LED ASSEMBLY 审中-公开
标题翻译：边缘发光LED组件
公开(公告)号：US20100032703A1
公开(公告)日：2010-02-11
申请号：US12579494
申请日：2009-10-15
申请人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
发明人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
IPC分类号： H01L33/00
CPC分类号： H01L33/46
摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.
摘要翻译：根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件比外部发光面。反射元件接收在LED堆叠内产生的光并将接收的光反射回LED堆叠。反射光的至少一部分然后从外部发射表面发射。

9. 发明授权

US07573074B2 LED electrode 有权
标题翻译： LED电极
公开(公告)号：US07573074B2
公开(公告)日：2009-08-11
申请号：US11437570
申请日：2006-05-19
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.
摘要翻译：公开了一种用于增强LED的亮度和/或效率的电极结构。电极结构可以具有形成在电极和发光半导体材料之间的金属电极和光学透射的厚电介质材料。电极和厚电介质配合以将来自半导体材料的光反射回半导体，以增强光最终从半导体材料透射的可能性。这种LED可以具有增强的效用，并且可以适用于诸如一般照明的用途。

10. 发明申请

US20090179229A1 OHMIC CONTACT ON p-TYPE GaN 失效
标题翻译： OHMIC接触p型GaN
公开(公告)号：US20090179229A1
公开(公告)日：2009-07-16
申请号：US12356310
申请日：2009-01-20
申请人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01L29/22
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

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