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1. 发明授权

US07692223B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07692223B2
公开(公告)日：2010-04-06
申请号：US11785145
申请日：2007-04-16
申请人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号： H01L27/088
CPC分类号： H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译：本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

2. 发明申请

US20070252179A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070252179A1
公开(公告)日：2007-11-01
申请号：US11785145
申请日：2007-04-16
申请人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号： H01L29/76
CPC分类号： H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译：本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

3. 发明申请

US20100187524A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100187524A1
公开(公告)日：2010-07-29
申请号：US12751300
申请日：2010-03-31
申请人： Atsuo ISOBE , Tamae TAKANO , Yasuyuki ARAI , Fumiko TERASAWA
发明人： Atsuo ISOBE , Tamae TAKANO , Yasuyuki ARAI , Fumiko TERASAWA
IPC分类号： H01L29/786 , H01L29/12 , H01L29/788
CPC分类号： H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译：本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

4. 发明授权

US08896049B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08896049B2
公开(公告)日：2014-11-25
申请号：US12751300
申请日：2010-03-31
申请人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号： H01L29/788 , H01L27/115 , H01L21/84 , H01L27/12 , H01L29/76
CPC分类号： H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译：本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

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