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1. 发明授权

US07692223B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07692223B2
公开(公告)日：2010-04-06
申请号：US11785145
申请日：2007-04-16
申请人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号： H01L27/088
CPC分类号： H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译：本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

2. 发明申请

US20070252179A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070252179A1
公开(公告)日：2007-11-01
申请号：US11785145
申请日：2007-04-16
申请人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号： H01L29/76
CPC分类号： H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译：本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

3. 发明授权

US08896049B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08896049B2
公开(公告)日：2014-11-25
申请号：US12751300
申请日：2010-03-31
申请人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人： Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号： H01L29/788 , H01L27/115 , H01L21/84 , H01L27/12 , H01L29/76
CPC分类号： H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译：本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

4. 发明授权

US08809862B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08809862B2
公开(公告)日：2014-08-19
申请号：US12909393
申请日：2010-10-21
申请人： Tamae Takano , Atsuo Isobe
发明人： Tamae Takano , Atsuo Isobe
IPC分类号： H01L29/04
CPC分类号： H01L29/78606 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L29/0603 , H01L29/78609 , H01L29/78636
摘要： The present invention provides a semiconductor device which suppresses a short circuit and a leakage current between a semiconductor film and a gate electrode generated by a break or thin thickness of a gate insulating film in an end portion of a channel region of the semiconductor film, and the manufacturing method of the semiconductor device. Plural thin film transistors which each have semiconductor film provided over a substrate continuously, conductive films provided over the semiconductor film through a gate insulating film, source and drain regions provided in the semiconductor film which are not overlapped with the conductive films, and channel regions provided in the semiconductor film existing under the conductive films and between the source and drain regions. And impurity regions provided in the semiconductor film which is not overlapped with the conductive film and provided adjacent to the source and drain regions. Further, the conductive films are provided over the channel regions and regions of the semiconductor film which are provided adjacent to the channel regions.
摘要翻译：本发明提供一种半导体器件，其抑制由半导体膜的沟道区域的端部中的栅极绝缘膜的断裂或薄的厚度产生的半导体膜和栅电极之间的短路和漏电流，以及半导体器件的制造方法。连续地设置在基板上的半导体膜的多个薄膜晶体管，通过栅极绝缘膜设置在半导体膜上的导电膜，设置在半导体膜中的不与导电膜重叠的源区和漏区，以及设置的沟道区在存在于导电膜之下以及源极和漏极区之间的半导体膜中。以及设置在半导体膜中的不与导电膜重叠并且设置在源极和漏极区附近的杂质区。此外，导电膜设置在与沟道区相邻设置的半导体膜的沟道区域和区域之上。

5. 发明申请

US20080070352A1 Method of manufacturing a semiconductor device 有权
公开(公告)号：US20080070352A1
公开(公告)日：2008-03-20
申请号：US11978585
申请日：2007-10-30
申请人： Akihisa Shimomura , Osamu Nakamura , Tatsuya Arao , Hidekazu Miyairi , Atsuo Isobe , Tamae Takano , Kouki Inoue
发明人： Akihisa Shimomura , Osamu Nakamura , Tatsuya Arao , Hidekazu Miyairi , Atsuo Isobe , Tamae Takano , Kouki Inoue
IPC分类号： H01L21/84
CPC分类号： H01L21/02683 , H01L21/2026 , H01L21/268 , H01L27/12 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78675
摘要： An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

6. 发明授权

US07329594B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07329594B2
公开(公告)日：2008-02-12
申请号：US10607542
申请日：2003-06-27
申请人： Akihisa Shimomura , Osamu Nakamura , Tatsuya Arao , Hidekazu Miyairi , Atsuo Isobe , Tamae Takano , Kouki Inoue
发明人： Akihisa Shimomura , Osamu Nakamura , Tatsuya Arao , Hidekazu Miyairi , Atsuo Isobe , Tamae Takano , Kouki Inoue
IPC分类号： H01L21/425
CPC分类号： H01L21/02683 , H01L21/2026 , H01L21/268 , H01L27/12 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78675
摘要： An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.
摘要翻译：一种导电类型的杂质在被注入半导体层之前被电场电离和加速，以在其表面附近形成高浓度杂质区。然后用连续波激光照射半导体层进行熔融和结晶或再结晶，半导体层中形成杂质浓度恒定的区域。只要杂质元素被重新分布，连续波激光照射可以使半导体层从非晶相进入结晶相。通过该过程将杂质分离，以产生新的高浓度区域。然而，该区域被移除并且没有问题出现。

7. 发明授权

US07326961B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07326961B2
公开(公告)日：2008-02-05
申请号：US11107822
申请日：2005-04-18
申请人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
IPC分类号： H01L29/72
CPC分类号： H01L21/02691 , H01L21/02678 , H01L21/02683 , H01L21/2022 , H01L27/12 , H01L27/1281
摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.
摘要翻译：为了提供与使用激光结晶法的半导体器件的制造方法相关的装置，其能够降低设计变化中涉及的成本，防止晶界在TFT的沟道形成区域中发展，并且防止显着 TFT的迁移率的降低，导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。在根据本发明的半导体器件中，在形成在基膜上的多个TFT中，一些TFT电连接形成逻辑元件。多个逻辑元件用于形成电路。基膜具有多个具有矩形或条状的突出部分。包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间，并且通过沿着投影部的纵向扫描的激光而结晶化。

8. 发明申请

US20060267099A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20060267099A1
公开(公告)日：2006-11-30
申请号：US11434163
申请日：2006-05-16
申请人： Tamae Takano , Atsuo Isobe
发明人： Tamae Takano , Atsuo Isobe
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/78606 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L29/0603 , H01L29/78609 , H01L29/78636
摘要： The present invention provides a semiconductor device which suppresses a short circuit and a leakage current between a semiconductor film and a gate electrode generated by a break or thin thickness of a gate insulating film in an end portion of a channel region of the semiconductor film, and the manufacturing method of the semiconductor device. Plural thin film transistors which each have semiconductor film provided over a substrate continuously, conductive films provided over the semiconductor film through a gate insulating film, source and drain regions provided in the semiconductor film which are not overlapped with the conductive films, and channel regions provided in the semiconductor film existing under the conductive films and between the source and drain regions. And impurity regions provided in the semiconductor film which is not overlapped with the conductive film and provided adjacent to the source and drain regions. Further, the conductive films are provided over the channel regions and regions of the semiconductor film which are provided adjacent to the channel regions.
摘要翻译：本发明提供一种半导体器件，其抑制由半导体膜的沟道区域的端部中的栅极绝缘膜的断裂或薄的厚度产生的半导体膜和栅电极之间的短路和漏电流，以及半导体器件的制造方法。连续地设置在基板上的半导体膜的多个薄膜晶体管，通过栅极绝缘膜设置在半导体膜上的导电膜，设置在半导体膜中的不与导电膜重叠的源区和漏区，以及设置的沟道区在存在于导电膜之下以及源极和漏极区之间的半导体膜中。以及设置在半导体膜中的不与导电膜重叠并且设置在源极和漏极区附近的杂质区。此外，导电膜设置在与沟道区相邻设置的半导体膜的沟道区域和区域之上。

9. 发明授权

US07718547B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07718547B2
公开(公告)日：2010-05-18
申请号：US12334589
申请日：2008-12-15
申请人： Atsuo Isobe , Satoshi Murakami , Tamae Takano , Shunpei Yamazaki
发明人： Atsuo Isobe , Satoshi Murakami , Tamae Takano , Shunpei Yamazaki
IPC分类号： H01L21/31
CPC分类号： H01L29/66757 , H01L27/12 , H01L27/1248 , H01L29/42384
摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition of an electron density of 1×1011 cm−3 or more and 1×1013 cm−3 or less and an electron temperature of 0.5 eV or more and 1.5 eV or less, using a high frequency wave, forming a second insulating film to cover the semiconductor film, forming a gate electrode over the second insulating film, forming a third insulating film to cover the gate electrode, and forming a conductive film over the third insulating film.
摘要翻译：本发明的半导体器件的制造方法包括以下步骤：在衬底上形成第一绝缘膜，在第一绝缘膜上形成半导体膜，通过对半导体膜进行等离子体处理来对半导体膜进行氧化或氮化使用高频波，电子密度为1×10 11 cm -3以上且1×10 13 cm -3以下且电子温度为0.5eV以上1.5eV以下的条件，形成第2绝缘膜覆盖半导体膜，在第二绝缘膜上形成栅电极，形成第三绝缘膜以覆盖栅电极，并在第三绝缘膜上形成导电膜。

10. 发明申请

US20050205869A1 Semiconductor device and manufacturing method therefor 有权
公开(公告)号：US20050205869A1
公开(公告)日：2005-09-22
申请号：US11107822
申请日：2005-04-18
申请人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
IPC分类号： H01L21/20 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04
CPC分类号： H01L21/02691 , H01L21/02678 , H01L21/02683 , H01L21/2022 , H01L27/12 , H01L27/1281
摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

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