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    • 2. 发明授权
    • Method, apparatus and communication system for protecting signaling transmission
    • 用于保护信令传输的方法,装置和通信系统
    • US08593944B2
    • 2013-11-26
    • US12901980
    • 2010-10-11
    • Gang Qian
    • Gang Qian
    • H04L12/26
    • H04L41/147H04L41/06
    • The present invention discloses a method, an apparatus, and a communication system for protecting signaling transmission, relates to the communication field, and enables end-to-end signaling protection. In an embodiment of the present invention, a primary signaling path and at least one secondary signaling path are created between terminals; the transmission protocol of the primary signaling path is different from the transmission protocol of the secondary signaling path, and the secondary signaling path works instead when the primary signaling path is in an abnormal state. The embodiments of the present invention are primarily applied to communication systems, and in particular, to the communication systems that support multiple transmission modes, for example, WCDMA system that supports IP bearers.
    • 本发明公开了一种用于保护信令传输的方法,装置和通信系统,涉及通信领域,并实现端到端信令保护。 在本发明的实施例中,在终端之间创建主信令路径和至少一个次信令路径; 主要信令路径的传输协议与二级信令路径的传输协议不同,当主信令路径处于异常状态时,二级信令路由工作。 本发明的实施例主要应用于通信系统,特别是应用于支持多种传输模式的通信系统,例如支持IP承载的WCDMA系统。
    • 4. 发明授权
    • Method to avoid dishing in forming trenches for shallow trench isolation
    • 避免形成沟槽进行浅沟槽隔离的方法
    • US6165869A
    • 2000-12-26
    • US96047
    • 1998-06-11
    • Gang QianChock Hing GanLap Hung ChanPoh Suan Tan
    • Gang QianChock Hing GanLap Hung ChanPoh Suan Tan
    • H01L21/762H01L21/76
    • H01L21/76224
    • A method is described for filling trenches with dielectric for shallow trench isolation which completely fills the trench and avoids problems due to dishing at the top of the trench. A trench is formed in a substrate having a second dielectric material formed thereon. The trench is lined with a third dielectric material. Sub atmospheric chemical vapor deposition, SACVD, of tetra-ethyl-ortho-silicate and ozone is used to grow a fourth dielectric on the surface of the second dielectric material and in the trench lined with the third dielectric material. The growth rate of fourth dielectric on the third dielectric is greater than the growth rate of the fourth dielectric on the second dielectric using SACVD of tetra-ethyl-ortho-silicate and ozone. The difference in growth rate assures that the trench is completely filled with fourth dielectric even for relatively thin layers of fourth dielectric grown on the second dielectric. This provides good planarity for a planarized substrate and avoids the problem of dishing at the top of the trench.
    • 描述了一种用于填充具有用于浅沟槽隔离的电介质的沟槽的方法,其完全填充沟槽并且避免了由于沟槽顶部的凹陷引起的问题。 在其上形成有第二电介质材料的基板中形成沟槽。 沟槽衬有第三介电材料。 使用四乙基原硅酸盐和臭氧的次大气化学气相沉积,SACVD在第二介电材料的表面上和在第三介电材料内衬的沟槽中生长第四电介质。 第四电介质的第四电介质的生长速率大于使用四乙基原硅酸盐和臭氧的SACVD的第二电介质上的第四电介质的生长速率。 生长速率的差异确保即使对于在第二电介质上生长的第四电介质的较薄层,沟槽也完全填充第四电介质。 这为平坦化衬底提供了良好的平面性,并且避免了在沟槽顶部的凹陷的问题。