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    • 7. 发明授权
    • Gated store buffer for an advanced microprocessor
    • 高级微处理器的门控存储缓冲区
    • US06011908A
    • 2000-01-04
    • US772686
    • 1996-12-23
    • Malcolm J. WingGodfrey P. D'Souza
    • Malcolm J. WingGodfrey P. D'Souza
    • G06F9/30G06F9/318G06F9/38G06F9/455G06F11/00
    • G06F9/3808G06F9/3834G06F9/3861
    • A gated store buffer including circuitry for temporarily holding apart from other memory stores all memory stores sequentially generated during a translation interval by a host processor translating a sequence of target instructions into host instructions, circuitry for transferring memory stores sequentially generated during a translation interval to memory if the translation executes without generating an exception, circuitry for indicating which memory stores to identical memory addresses are most recent in response to a memory access at the memory address, and circuitry for eliminating memory stores sequentially generated during a translation interval if the translation executes without generating an exception.
    • 门控存储缓冲器,包括用于临时保持与其他存储器分开的电路,用于存储在翻译间隔期间由主处理器顺序产生的所有存储器存储器,所述存储器存储器将目标指令序列转换为主机指令,用于传送在翻译间隔期间顺序生成的存储器存储器的存 如果转换执行而不产生异常,则用于指示哪个存储器存储到相同的存储器地址的电路响应于存储器地址处的存储器访问是最新的,以及用于消除在转换间隔期间顺序生成的存储器存储器的电路,如果转换执行而没有 产生异常。
    • 8. 发明授权
    • Static logic circuit with improved output signal levels
    • 具有改善输出信号电平的静态逻辑电路
    • US5546022A
    • 1996-08-13
    • US357447
    • 1994-12-16
    • Godfrey P. D'SouzaDouglas A. Laird
    • Godfrey P. D'SouzaDouglas A. Laird
    • H03K19/0175H03K19/003H03K19/0948H03K19/094
    • H03K19/00361
    • A static logic circuit with improved output signal levels includes a static complementary MOSFET circuit with a signal node and pull-up and pull-down amplifiers, each with at least one biasing circuit, connected thereto. The pull-up and pull-down amplifiers are connected to VDD and VSS, respectively, and receive one or more logic signals (e.g. one for an inverter and more for logic gates such as AND, OR, etc.) and one or more bias signals and in accordance therewith provide pull-up and pull-down voltages, respectively, to the signal node. In accordance with the applied pull-up or pull-down voltage, the signal node charges to a charge state with an associated node voltage approximately equal to VDD or VSS, respectively. Each biasing circuit receives the same input logic signal as its associated pull-up or pull-down amplifier and provides thereto a bias signal approximately equal to VSS or VDD, respectively. In accordance with its input logic signal, each pull-up or pull-down amplifier together with its associated biasing circuit provides either an active current path between the signal node and VDD or VSS for applying the desired pull-up or pull-down voltage, respectively, or a leakage current path between VDD and VSS for preventing the application of an undesired pull-down or pull-up voltage during application of the desired pull-up or pull-down voltage, respectively.
    • 具有改进的输出信号电平的静态逻辑电路包括具有信号节点和上拉和下拉放大器的静态互补MOSFET电路,每个具有至少一个与其相连的偏置电路。 上拉和下拉放大器分别连接到VDD和VSS,并接收一个或多个逻辑信号(例如一个用于逆变器,更多用于逻辑门如AND,OR等)和一个或多个偏置 信号并分别向信号节点提供上拉和下拉电压。 根据施加的上拉或下拉电压,信号节点分别充电到相关节点电压大约等于VDD或VSS的充电状态。 每个偏置电路接收与其相关联的上拉或下拉放大器相同的输入逻辑信号,并分别向其提供大约等于VSS或VDD的偏置信号。 根据其输入逻辑信号,每个上拉或下拉放大器及其相关的偏置电路在信号节点和VDD或VSS之间提供有效电流路径,以施加所需的上拉或下拉电压, 或者分别在VDD和VSS之间的漏电流路径,以分别在施加期望的上拉或下拉电压期间防止施加不期望的下拉或上拉电压。