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    • 1. 发明授权
    • Power semiconductor device, power arm and inverter circuit
    • 功率半导体器件,电源臂及逆变电路
    • US06643155B2
    • 2003-11-04
    • US09880919
    • 2001-06-15
    • Gourab MajumdarShinji Hatae
    • Gourab MajumdarShinji Hatae
    • H02M75387
    • H02M7/003
    • It is an object of the present invention to provide an inverter circuit including a power arm ensuring a high breakdown voltage and having low probability of malfunction. In a power arm element consisting of a switching element and a diode connected in inverse-parallel connection thereto, n free wheeling diodes (n≧2) connected in series are connected in inverse-parallel connection to a switching element (1b). A breakdown voltage between an anode and a cathode of each free wheeling diode is defined to be 1/n of a breakdown voltage of the switching element (1b). That is, the breakdown voltage of each free wheeling diode is reduced to 1/n to reduce a thickness of a n− drift region. A transient voltage characteristic during flow of a free wheeling current can be thereby kept low. The drop in the breakdown voltage is compensated with the n free wheeling diodes connected in series, to thereby ensure breakdown voltage of a degree approximately the same as that of the switching element.
    • 本发明的目的是提供一种包括确保高击穿电压并且故障概率低的电源臂的逆变器电路。 在由开关元件和与其并联连接的二极管组成的功率臂元件中,串联连接的n个续流二极管(n> = 2)与开关元件(1b)反并联连接。 每个续流二极管的阳极和阴极之间的击穿电压被定义为开关元件(1b)的击穿电压的1 / n。 也就是说,每个续流二极管的击穿电压降低到1 / n,以减小n漂移区域的厚度。 因此,可以保持在续流电流的流动期间的瞬时电压特性。 通过串联连接的n个续流二极管来补偿击穿电压的下降,从而确保与开关元件大致相同程度的击穿电压。
    • 6. 发明授权
    • Electrically isolated MOSFET drive circuit
    • 电隔离MOSFET驱动电路
    • US4880995A
    • 1989-11-14
    • US233855
    • 1988-08-18
    • Satoshi MoriGourab Majumdar
    • Satoshi MoriGourab Majumdar
    • H03K17/0412H03K17/567H03K17/60
    • H03K17/04126H03K17/567
    • A driver circuit for driving a switching element in response to a driving signal from a driving signal generator includes an electrical isolation circuit for generating an electrically isolated signal from the driving signal in response to the driving signal; a first signal generator which receives the electrically isolated signal, and generates a first signal which level-changes from a second level to a third level in response to the level change of the electrically isolated signal from a first level to the second level; a second signal generator which receives the electrically isolated signal, and generates a second signal synchronous with the electrically isolated signal; a third signal generator which receives the signal from the first signal generator, and generates a third signal synchronous with the first signal; a fourth signal generator which receives the signals from the second and the third signal generators, and generates a fourth signal having a signal level equal to the sum of the second and the third signal levels, the generator including a metal oxide semiconductor field effect transistor.
    • 用于响应于来自驱动信号发生器的驱动信号驱动开关元件的驱动器电路包括电隔离电路,用于响应驱动信号从驱动信号产生电隔离信号; 第一信号发生器,其接收电隔离信号,并且响应于电隔离信号从第一电平到第二电平的电平变化而产生电平从第二电平变化到第三电平的第一信号; 第二信号发生器,其接收所述电隔离信号,并产生与所述电隔离信号同步的第二信号; 第三信号发生器,其接收来自第一信号发生器的信号,并产生与第一信号同步的第三信号; 第四信号发生器,其接收来自第二和第三信号发生器的信号,并产生具有等于第二和第三信号电平之和的信号电平的第四信号,发生器包括金属氧化物半导体场效应晶体管。
    • 9. 发明授权
    • Drive control device, module and combined module
    • 驱动控制装置,模块和组合模块
    • US06208041B1
    • 2001-03-27
    • US09244175
    • 1999-02-04
    • Gourab MajumdarKhalid Hassan HusseinMitsutaka Iwasaki
    • Gourab MajumdarKhalid Hassan HusseinMitsutaka Iwasaki
    • H03K1708
    • H03K17/127H03K17/122Y10T307/747Y10T307/858
    • Current sense voltages (VCSl˜VCSn), which are the detected values of n (≧2) IGBTs connected in parallel, are converted into digital form, and thereafter, are subjected to an operation processing. After the current sense voltages (VCSl˜VCSn) are converted into collector currents (Il˜In) by use of constants (Gl˜Gn and VOFFSETl˜VOFFSETn)(step 103), current deviations (&Dgr;Il˜&Dgr;In) respectively defined as differences of the collector currents (Il˜In) from the average (IAVG) thereof are calculated (step 104, 105). Drive control voltages (VDl˜VDn) are renewed by changes (&Dgr;VDl˜&Dgr;VDn) which are respectively obtained by multiplying the current deviations (&Dgr;Il˜&Dgr;In) by factors (Kij)(step 106, 107). The drive control voltage (VDl˜VDn) are converted into analogue form, and thereafter, supplied to n IGBTs as their gate voltages (VGE). The constants (Gl˜Gn, VOFFSETl˜VOFFSETn, and Kij) are prepared individually for respective n switching elements. As a result, current imbalance of plural switching elements connected in parallel is eliminated in high precision.
    • 作为并联连接的n(> = 2)个IGBT的检测值的电流检测电压(VCS1〜VCSn)被转换为数字形式,然后进行操作处理。 在通过使用常数(G1〜Gn和VOFFSET1〜VOFFSETn)将电流检测电压(VCS1〜VCSn)转换为集电极电流(Il〜In)(步骤103))后,将电流偏差(DELTAI1〜DELTAIn)分别定义为 计算来自其平均值(IAVG)的集电极电流(I1〜In)(步骤104,105)。 驱动控制电压(VD1〜VDn)通过将电流偏差(DELTAI1〜DELTAIn)乘以因子(Kij)而得到的变化(DELTAVD1〜DELTAVDn)更新(步骤106,107)。 驱动控制电压(VD1〜VDn)转换为模拟形式,之后提供给n个IGBT作为其栅极电压(VGE)。 为各n个开关元件分别准备常数(Gl〜Gn,VOFFSET1〜VOFFSETn,Kij)。 结果,高精度地消除并联连接的多个开关元件的电流不平衡。