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1. 发明申请

US20050284259A1 Tantalum sputtering target and method of manufacture 审中-公开
公开(公告)号：US20050284259A1
公开(公告)日：2005-12-29
申请号：US11196156
申请日：2005-08-03
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： C01G35/00 , C22B3/04 , C22B5/00 , C22B5/04 , C22B9/22 , C22B34/24 , C22C27/02 , C23C14/14 , C23C14/34
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.

2. 发明授权

US06843896B2 Apparatus for processing metals 失效
标题翻译：金属加工设备
公开(公告)号：US06843896B2
公开(公告)日：2005-01-18
申请号：US10172220
申请日：2002-06-14
申请人： Guangxin Wang , Daniel M. Hydock , John Lehman
发明人： Guangxin Wang , Daniel M. Hydock , John Lehman
IPC分类号： B01J47/02 , B01J47/12 , C22B23/06 , C23C14/14 , C23C14/34 , C25C1/00 , C25C1/08 , C25C7/00 , C25C7/06 , C25C7/02
CPC分类号： C25C1/00 , C22B23/06 , C25C1/08
摘要： The invention encompasses a method and apparatus for producing high-purity metals (such as, for example, high-purity cobalt), and also encompasses the high-purity metals so produced. The method can comprise a combination of electrolysis and ion exchange followed by melting to produce cobalt of a desired purity. The method can result in the production of high-purity cobalt comprising total metallic impurities of less than 50 ppm. Individual elemental impurities of the produced cobalt can be follows: Na and K less than 0.5 ppm each, Fe less than 10 ppm, Ni less than 5 ppm, Cr less than 1 ppm, Ti less than 3 ppm and O less than 450 ppm.
摘要翻译：本发明包括用于生产高纯度金属（例如高纯度钴）的方法和装置，并且还包括如此生产的高纯度金属。该方法可以包括电解和离子交换的组合，随后熔化以产生所需纯度的钴。该方法可以产生包含小于50ppm的总金属杂质的高纯度钴。所产生的钴的各种元素杂质可以如下：Na和K各自小于0.5ppm，Fe小于10ppm，Ni小于5ppm，Cr小于1ppm，Ti小于3ppm，O小于450ppm。

3. 发明授权

US07252751B2 Methods for electrically forming materials 失效
标题翻译：电成型材料的方法
公开(公告)号：US07252751B2
公开(公告)日：2007-08-07
申请号：US10794679
申请日：2004-03-05
申请人： Guangxin Wang
发明人： Guangxin Wang
IPC分类号： C25C3/36 , C25C1/24
CPC分类号： C22C27/02 , C22C14/00 , C23C14/3414 , C25C3/26 , C25C3/36
摘要： The invention includes a method of forming a material which comprises at least two elements. More specifically, the method comprises providing an electrolytic cell comprising a cathode, an anode, and an electrolytic solution extending between the cathode and anode. A metallic product is electrolytically formed within the electrolytic cell. The forming of the metallic product comprises primarily electrorefining of a first element of the at least two elements and primarily electrowinning of a second element of the at least two elements. The invention also includes a mixed metal product comprising at least two elements, such as a product comprising tantalum and titanium.
摘要翻译：本发明包括形成包括至少两个元件的材料的方法。更具体地，该方法包括提供包括阴极，阳极和在阴极和阳极之间延伸的电解液的电解池。在电解池内电解形成金属制品。金属制品的形成主要包括电解精炼至少两种元素的第一元素，并且主要电解提取至少两种元素的第二元素。本发明还包括包含至少两种元素的混合金属产品，例如包含钽和钛的产品。

4. 发明授权

US06454994B1 Solids comprising tantalum, strontium and silicon 失效
标题翻译：固体包括钽，锶和硅
公开(公告)号：US06454994B1
公开(公告)日：2002-09-24
申请号：US09649824
申请日：2000-08-28
申请人： Guangxin Wang
发明人： Guangxin Wang
IPC分类号： C22C2702
CPC分类号： B25B15/008 , B25G1/063
摘要： The invention includes a method of forming a solid from at least two different powdered materials. A first and second of the different powder materials is compressed into a pellet. A melt pool is formed at a temperature which will melt both the first and second materials. The pellet is fed to the melt pool to melt the first and second materials, and the melted first and second materials are subsequently cooled to form the solid. The invention also includes a method of forming a solid which includes tantalum and silicon. The invention further includes a homogeneous solid comprising tantalum and silicon, and formed from a molten mixture of tantalum and silicon.
摘要翻译：本发明包括从至少两种不同粉末材料形成固体的方法。第一和第二种不同的粉末材料被压缩成颗粒。在熔融第一和第二材料的温度下形成熔池。将颗粒进料到熔池以熔化第一和第二材料，然后将熔融的第一和第二材料冷却以形成固体。本发明还包括形成包括钽和硅的固体的方法。本发明还包括包含钽和硅的均匀固体，并由钽和硅的熔融混合物形成。

5. 发明授权

US07102229B2 Capacitor containing high purity tantalum 失效
标题翻译：含高纯钽的电容器
公开(公告)号：US07102229B2
公开(公告)日：2006-09-05
申请号：US11202743
申请日：2005-08-12
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
摘要翻译：描述了一种生产高纯度钽，所制造的高纯度钽和高纯度钽的溅射靶的方法。该方法包括纯化原料，随后精制成高纯度钽。

6. 发明授权

US06958257B2 Tantalum sputtering target and method of manufacture 有权
公开(公告)号：US06958257B2
公开(公告)日：2005-10-25
申请号：US10053201
申请日：2002-01-15
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： C01G35/00 , C22B3/04 , C22B5/00 , C22B5/04 , C22B9/22 , C22B34/24 , C22C27/02 , C23C14/14 , C23C14/34 , H01L21/00
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.

7. 发明申请

US20050284546A1 Tantalum sputtering target and method of manufacture 失效
公开(公告)号：US20050284546A1
公开(公告)日：2005-12-29
申请号：US11202743
申请日：2005-08-12
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： C01G35/00 , C22B3/04 , C22B5/00 , C22B5/04 , C22B9/22 , C22B34/24 , C22C27/02 , C23C14/14 , C23C14/34
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.

8. 发明授权

US06818119B2 Method for processing metals 失效
标题翻译：金属加工方法
公开(公告)号：US06818119B2
公开(公告)日：2004-11-16
申请号：US10172695
申请日：2002-06-14
申请人： Guangxin Wang , Daniel M. Hydock , John Lehman
发明人： Guangxin Wang , Daniel M. Hydock , John Lehman
IPC分类号： C25C100
CPC分类号： C25C1/00 , C22B23/06 , C25C1/08
摘要： The invention encompasses a method and apparatus for producing high-purity metals (such as, for example, high-purity cobalt), and also encompasses the high-purity metals so produced. The method can comprise a combination of electrolysis and ion exchange followed by melting to produce cobalt of a desired purity. The method can result in the production of high-purity cobalt comprising total metallic impurities of less than 50 ppm. Individual elemental impurities of the produced cobalt can be follows: Na and K less than 0.5 ppm each, Fe less than 10 ppm, Ni less than 5 ppm, Cr less than 1 ppm, Ti less than 3 ppm and 0 less than 450 ppm.
摘要翻译：本发明包括用于生产高纯度金属（例如高纯度钴）的方法和装置，并且还包括如此生产的高纯度金属。该方法可以包括电解和离子交换的组合，随后熔化以产生所需纯度的钴。该方法可以产生包含小于50ppm的总金属杂质的高纯度钴。所产生的钴的各种元素杂质可以如下：Na和K各自小于0.5ppm，Fe小于10ppm，Ni小于5ppm，Cr小于1ppm，Ti小于3ppm，0小于450ppm。

9. 发明授权

US06955938B2 Tantalum sputtering target and method of manufacture 有权
标题翻译：钽溅射靶及其制造方法
公开(公告)号：US06955938B2
公开(公告)日：2005-10-18
申请号：US10229888
申请日：2002-08-27
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： C01G35/00 , C22B3/04 , C22B5/00 , C22B5/04 , C22B9/22 , C22B34/24 , C22C27/02 , C23C14/14 , C23C14/34 , H01L21/00
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
摘要翻译：描述了一种生产高纯度钽，所制造的高纯度钽和高纯度钽的溅射靶的方法。该方法包括纯化原料，随后精制成高纯度钽。

10. 发明授权

US06827828B2 Mixed metal materials 失效
标题翻译：混合金属材料
公开(公告)号：US06827828B2
公开(公告)日：2004-12-07
申请号：US09822037
申请日：2001-03-29
申请人： Guangxin Wang
发明人： Guangxin Wang
IPC分类号： C22C1400
CPC分类号： C22C27/02 , C22C14/00 , C23C14/3414 , C25C3/26 , C25C3/36
摘要： The invention includes a method of forming a material which comprises at least two elements. More specifically, the method comprises providing an electrolytic cell comprising a cathode, an anode, and an electrolytic solution extending between the cathode and anode. A metallic product is electrolytically formed within the electrolytic cell. The forming of the metallic product comprises primarily electrorefining of a first element of the at least two elements and primarily electrowinning of a second element of the at least two elements. The invention also includes a mixed metal product comprising at least two elements, such as a product comprising tantalum and titanium.
摘要翻译：本发明包括形成包括至少两个元件的材料的方法。更具体地，该方法包括提供包括阴极，阳极和在阴极和阳极之间延伸的电解液的电解池。在电解池内电解形成金属制品。金属制品的形成主要包括电解精炼至少两种元素的第一元素，并且主要电解提取至少两种元素的第二元素。本发明还包括包含至少两种元素的混合金属产品，例如包含钽和钛的产品。

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