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    • 1. 发明授权
    • Power semiconductor device having adjustable output capacitance
    • 具有可调输出电容的功率半导体器件
    • US08362529B2
    • 2013-01-29
    • US12784505
    • 2010-05-21
    • Wei-Chieh LinGuo-Liang YangShian-Hau Liao
    • Wei-Chieh LinGuo-Liang YangShian-Hau Liao
    • H01L29/76
    • H01L27/06H01L29/739
    • A power semiconductor device having adjustable output capacitance includes a semiconductor substrate having a first device region and a second device region defined thereon, at lest one power transistor device disposed in the first device region, a heavily doped region disposed in the semiconductor substrate of the second device region, a capacitor dielectric layer disposed on the heavily doped region, a source metal layer disposed on a top surface of the semiconductor substrate and electrically connected to the power transistor device, and a drain metal layer disposed on a bottom surface of the semiconductor substrate. The source metal layer in the second device, the capacitor dielectric layer and the heavily doped region form a snubber capacitor.
    • 具有可调输出电容的功率半导体器件包括半导体衬底,其具有限定在其上的第一器件区域和第二器件区域,至少一个设置在第一器件区域中的功率晶体管器件,设置在第二器件区域的半导体衬底中的重掺杂区域 设置在重掺杂区域上的电容器电介质层,设置在半导体衬底的顶表面上并电连接到功率晶体管器件的源极金属层和设置在半导体衬底的底表面上的漏极金属层 。 第二器件中的源极金属层,电容器介质层和重掺杂区形成缓冲电容器。