专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09063302B2 Optical connector and optical device having the same 有权
标题翻译：光连接器和具有该光连接器的光学装置
公开(公告)号：US09063302B2
公开(公告)日：2015-06-23
申请号：US13443843
申请日：2012-04-10
申请人： Do Won Kim , Gyungock Kim
发明人： Do Won Kim , Gyungock Kim
IPC分类号： G02B6/36 , G02B6/38 , G02B6/42 , G02B6/12
CPC分类号： G02B6/3897 , G02B6/423 , G02B6/4249 , G02B6/4292 , G02B2006/12107
摘要： Provided are an optical connector capable of improving optical alignment efficiency and an optical device having the same. The connector may include a body having a top surface and a bottom surface facing each other, through holes penetrating the body to connect the top and bottom surfaces, and alignment keys provided on at least side surface of the body to be parallel to the through holes.
摘要翻译：提供能够提高光取向效率的光连接器和具有该光连接器的光学装置。连接器可以包括具有顶表面和底表面彼此面对的主体，穿过穿过主体以连接顶表面和底表面的孔以及设置在主体的至少侧表面上以与通孔平行的对准键。

2. 发明授权

US09025920B2 Optical coupling devices and silicon photonics chips having the same 有权
标题翻译：具有相同光耦合器件和硅光子芯片
公开(公告)号：US09025920B2
公开(公告)日：2015-05-05
申请号：US13620560
申请日：2012-09-14
申请人： Do Won Kim , Gyungock Kim
发明人： Do Won Kim , Gyungock Kim
IPC分类号： G02B6/26 , G02B6/42 , G02B6/30 , G02B6/122
CPC分类号： G02B6/305 , G02B6/1228 , G02B2006/12061
摘要： Provided are optical coupling devices and silicon photonics chips having the same. the optical coupling device may include a lower layer having a first region and a second region, a first core layer disposed on the lower layer, the first core layer including first and second waveguides disposed on the first and second regions, respectively, a clad layer covering the first waveguide, and a second core layer interposed between the clad layer and the lower layer to cover the second waveguide. The second waveguide has a width decreasing with increasing distance from the first region and a vertical thickness greater than that of the first waveguide.
摘要翻译：提供了具有其的光耦合器件和硅光子芯片。光耦合装置可以包括具有第一区域和第二区域的下层，设置在下层上的第一芯层，第一芯层分别包括设置在第一和第二区域上的第一和第二波导，包层覆盖第一波导，以及插入在包层和下层之间以覆盖第二波导的第二芯层。第二波导的宽度随着距离第一区域的距离增加而减小，并且垂直厚度大于第一波导的垂直厚度。

3. 发明授权

US08644657B2 Method of tuning resonance wavelength of ring resonator 失效
标题翻译：调谐环谐振器谐振波长的方法
公开(公告)号：US08644657B2
公开(公告)日：2014-02-04
申请号：US13175567
申请日：2011-07-01
申请人： Sahnggi Park , Gyungock Kim
发明人： Sahnggi Park , Gyungock Kim
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： H01P7/088 , G02F1/0147 , G02F1/3132 , H01P1/2135
摘要： Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.
摘要翻译：提供了调谐环形谐振器的谐振波长的方法。调谐环形谐振器的谐振波长的方法包括制备环形谐振器，该环形谐振器包含环形波导和覆盖环形波导的电介质层，并且加热环形谐振器以引起电介质层的折射率相位变化。

4. 发明申请

US20130136396A1 GRATING COUPLER 审中-公开
标题翻译：镀金联轴器
公开(公告)号：US20130136396A1
公开(公告)日：2013-05-30
申请号：US13620636
申请日：2012-09-14
申请人： Do Won KIM , Gyungock Kim
发明人： Do Won KIM , Gyungock Kim
IPC分类号： G02B6/34
CPC分类号： G02B6/34
摘要： Disclosed is a grating coupler which includes an optical waveguide transferring an optical signal; and a diffraction grating formed on the optical waveguide. The diffraction grating includes protrusions continuously formed and the protrusions have different heights.
摘要翻译：公开了一种光栅耦合器，其包括传输光信号的光波导; 以及形成在光波导上的衍射光栅。衍射光栅包括连续形成的突起，突起具有不同的高度。

5. 发明授权

US08320037B2 Electro-optic device 有权
标题翻译：电光装置
公开(公告)号：US08320037B2
公开(公告)日：2012-11-27
申请号：US12652623
申请日：2010-01-05
申请人： Jeong Woo Park , Jongbum You , Gyungock Kim
发明人： Jeong Woo Park , Jongbum You , Gyungock Kim
IPC分类号： G02F1/01 , H01L31/0232
CPC分类号： G02F1/025 , G02F1/2257 , G02F2001/212
摘要： An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.
摘要翻译：提供了一种电光装置。电光器件包括设置在第一导电类型半导体层和施加反向通孔电压的第二导电类型半导体层之间的结层。第一导电型半导体层和第二导电类型半导体层之间具有约2至4倍的掺杂浓度差，因此可以提供优化用于高速度，低功耗和高集成度的电光装置。

6. 发明授权

US08288185B2 Semiconductor devices and methods of forming the same 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US08288185B2
公开(公告)日：2012-10-16
申请号：US12788542
申请日：2010-05-27
申请人： In Gyoo Kim , Dae Seo Park , Jun Taek Hong , Gyungock Kim
发明人： In Gyoo Kim , Dae Seo Park , Jun Taek Hong , Gyungock Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/7624 , H01L21/76243 , H01L21/76264 , H01L29/0657
摘要： Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.
摘要翻译：提供半导体器件及其形成方法。根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案埋入氧化物层以暴露第一掩埋氧化物层。一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

7. 发明授权

US07995625B2 Resonator of hybrid laser diode 失效
标题翻译：混合激光二极管谐振器
公开(公告)号：US07995625B2
公开(公告)日：2011-08-09
申请号：US12499069
申请日：2009-07-07
申请人： Young Ahn Leem , Jung-Ho Song , Kisoo Kim , Gyungock Kim
发明人： Young Ahn Leem , Jung-Ho Song , Kisoo Kim , Gyungock Kim
IPC分类号： H01S3/098 , H01S3/03 , H01S3/082
CPC分类号： H01S5/026 , H01S5/021 , H01S5/0215 , H01S5/0655 , H01S5/1014 , H01S5/1025 , H01S5/1032 , H01S5/1064 , H01S5/125
摘要： Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.
摘要翻译：提供了一种混合激光二极管的谐振器。谐振器包括：包括混合波导，多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导，设置在半导体层的混合波导上，在化合物半导体波导的一端具有锥形耦合结构，锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。多模波导具有比混合波导窄的宽度，并且单模波导具有比多模波导窄的宽度。

8. 发明申请

US20110135252A1 SILICON PHOTONICS CHIP 审中-公开
标题翻译：硅胶片
公开(公告)号：US20110135252A1
公开(公告)日：2011-06-09
申请号：US12816323
申请日：2010-06-15
申请人： Do Won KIM , Gyungock Kim , Junghyung Pyo , Duk Jun Kim , In Gyoo Kim
发明人： Do Won KIM , Gyungock Kim , Junghyung Pyo , Duk Jun Kim , In Gyoo Kim
IPC分类号： G02B6/30 , G02B6/10
CPC分类号： G02B6/43 , G02B6/262 , G02B6/4292
摘要： Provided is a silicon photonics chip that is thermally separated from a light emitting device. The silicon photonics chip includes photoelectric devices integrated on a silicon substrate. The photoelectric devices include an optical connection device optically guiding at least one signal light incident from a signal light generation device to transmit the signal light into the silicon substrate. The signal light generation device is thermally separated from the photoelectric devices, and is optically connected to the photoelectric devices.
摘要翻译：提供了与发光器件热分离的硅光子芯片。硅光子芯片包括集成在硅衬底上的光电器件。光电装置包括光学连接装置，其光引导从信号光产生装置入射的至少一个信号光，以将信号光传输到硅衬底。信号光产生装置与光电装置热分离，并与光电装置光学连接。

9. 发明申请

US20110058764A1 ELECTRO-OPTIC MODULATING DEVICE 有权
标题翻译：电光调制装置
公开(公告)号：US20110058764A1
公开(公告)日：2011-03-10
申请号：US12872881
申请日：2010-08-31
申请人： Gyungock KIM , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
发明人： Gyungock KIM , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F2201/063
摘要： Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
摘要翻译：提供了一种电光调制装置。电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。

10. 发明申请

US20100111469A1 SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME 有权
标题翻译：半导体集成电路，包括用于光通信的光栅耦合器及其形成方法
公开(公告)号：US20100111469A1
公开(公告)日：2010-05-06
申请号：US12684677
申请日：2010-01-08
申请人： Junghyung PYO , O-Kyun Kwon , Gyungock Kim
发明人： Junghyung PYO , O-Kyun Kwon , Gyungock Kim
IPC分类号： G02B6/122
CPC分类号： G02B6/34 , G02B6/124 , G02B6/30
摘要： Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.
摘要翻译：提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式