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    • 2. 发明授权
    • Resistive sense memory calibration for self-reference read method
    • 电阻式记忆校准用于自参考读取方法
    • US08213215B2
    • 2012-07-03
    • US13015085
    • 2011-01-27
    • Yiran ChenHai LiWenzhong ZhuXiaobin WangHenry HuangHongyue Liu
    • Yiran ChenHai LiWenzhong ZhuXiaobin WangHenry HuangHongyue Liu
    • G11C11/00G11C5/14G11C7/06
    • G11C13/004G11C11/1673G11C27/02G11C2013/0057G11C2207/2254
    • Resistive memory calibration for self-reference read methods are described. One method of self-reference reading a resistive memory unit includes setting a plurality of resistive memory units to a first resistive data state. The resistive memory units forms a memory array. Reading a sensed resistive data state for each resistive memory unit by applying a first read current and a second read current through each resistive memory unit and then comparing voltages formed by the first read current and the second read current to determine the sensed resistive data state for each resistive memory unit. Then the method includes adjusting the first or the second read current, read voltages, or storage device capacitance for each resistive memory unit where the sensed resistive data state was not the same as the first resistive data state until the sensed resistive data state is the same as the first resistive data state.
    • 描述了自参考读取方法的电阻记忆校准。 读取电阻性存储器单元的一种自参考方法包括将多个电阻存储器单元设置为第一电阻数据状态。 电阻存储器单元形成存储器阵列。 通过施加第一读取电流和第二读取电流通过每个电阻性存储器单元,然后比较由第一读取电流和第二读取电流形成的电压,来为每个电阻性存储器单元读取感测的电阻数据状态,以确定感测的电阻数据状态 每个电阻存储器单元。 然后,该方法包括调整每个电阻性存储器单元的第一或第二读取电流,读取电压或存储器件电容,其中感测的电阻数据状态与第一电阻数据状态不同,直到感测的电阻数据状态相同 作为第一电阻数据状态。
    • 3. 发明申请
    • Resistive Sense Memory Calibration for Self-Reference Read Method
    • 用于自参考读取方法的电阻式感应存储器校准
    • US20110122679A1
    • 2011-05-26
    • US13015085
    • 2011-01-27
    • Yiran ChenHai LiWenzhong ZhuXiaobin WangHenry HuangHongyue Liu
    • Yiran ChenHai LiWenzhong ZhuXiaobin WangHenry HuangHongyue Liu
    • G11C11/00
    • G11C13/004G11C11/1673G11C27/02G11C2013/0057G11C2207/2254
    • Resistive memory calibration for self-reference read methods are described. One method of self-reference reading a resistive memory unit includes setting a plurality of resistive memory units to a first resistive data state. The resistive memory units forms a memory array. Reading a sensed resistive data state for each resistive memory unit by applying a first read current and a second read current through each resistive memory unit and then comparing voltages formed by the first read current and the second read current to determine the sensed resistive data state for each resistive memory unit. Then the method includes adjusting the first or the second read current, read voltages, or storage device capacitance for each resistive memory unit where the sensed resistive data state was not the same as the first resistive data state until the sensed resistive data state is the same as the first resistive data state.
    • 描述了自参考读取方法的电阻记忆校准。 读取电阻性存储器单元的一种自参考方法包括将多个电阻存储器单元设置为第一电阻数据状态。 电阻存储器单元形成存储器阵列。 通过施加第一读取电流和第二读取电流通过每个电阻性存储器单元,然后比较由第一读取电流和第二读取电流形成的电压,来为每个电阻式存储器单元读取感测的电阻数据状态,以确定感测的电阻数据状态 每个电阻存储器单元。 然后,该方法包括调整每个电阻性存储器单元的第一或第二读取电流,读取电压或存储器件电容,其中感测的电阻数据状态与第一电阻数据状态不同,直到感测的电阻数据状态相同 作为第一电阻数据状态。
    • 4. 发明授权
    • Resistive sense memory calibration for self-reference read method
    • 电阻式记忆校准用于自参考读取方法
    • US07898838B2
    • 2011-03-01
    • US12390728
    • 2009-02-23
    • Yiran ChenHai LiWenzhong ZhuXiaobin WangHenry HuangHongyue Liu
    • Yiran ChenHai LiWenzhong ZhuXiaobin WangHenry HuangHongyue Liu
    • G11C11/00G11C7/06G11C5/14
    • G11C13/004G11C11/1673G11C27/02G11C2013/0057G11C2207/2254
    • Resistive memory calibration for self-reference read methods are described. One method of self-reference reading a resistive memory unit includes setting a plurality of resistive memory units to a first resistive data state. The resistive memory units forms a memory array. Reading a sensed resistive data state for each resistive memory unit by applying a first read current and a second read current through each resistive memory unit and then comparing voltages formed by the first read current and the second read current to determine the sensed resistive data state for each resistive memory unit. Then the method includes adjusting the first or the second read current, read voltages, or storage device capacitance for each resistive memory unit where the sensed resistive data state was not the same as the first resistive data state until the sensed resistive data state is the same as the first resistive data state.
    • 描述了自参考读取方法的电阻记忆校准。 读取电阻性存储器单元的一种自参考方法包括将多个电阻存储器单元设置为第一电阻数据状态。 电阻存储器单元形成存储器阵列。 通过施加第一读取电流和第二读取电流通过每个电阻性存储器单元,然后比较由第一读取电流和第二读取电流形成的电压,来为每个电阻性存储器单元读取感测的电阻数据状态,以确定感测的电阻数据状态 每个电阻存储器单元。 然后,该方法包括调整每个电阻性存储器单元的第一或第二读取电流,读取电压或存储器件电容,其中感测的电阻数据状态与第一电阻数据状态不同,直到感测的电阻数据状态相同 作为第一电阻数据状态。
    • 6. 发明申请
    • Programmable Thermally Controlled Electric Heating Mattress
    • 可编程热控电加热床垫
    • US20070257018A1
    • 2007-11-08
    • US11381529
    • 2006-05-03
    • Henry Huang
    • Henry Huang
    • H05B1/00
    • H05B1/0272A47C21/048
    • The programmable thermally controlled electric heating mattress comprises a conventional mattress, a microprocessor-based electronic controller, and a heating element. The heating element is a removable pad, which fastens onto the top surface or under the upper layer material of the mattress. The location and size of the heating element is such that it covers the lower body (feet and legs) of the user when the user lies down on the mattress. By providing heat to the feet, heat naturally transfers to other parts of the body through blood flow. The design minimizes the health risk, saves energy and cost, and creates a comfortable gradient heat zone to the user. A programmable microprocessor-based electronic controller provides the features of automatically controlling the heating pad temperature and on/off time, as well as monitoring the system safety. In one embodiment, the electronic controller is mounted to the side of the mattress body. In the second embodiment, the controller comprises two separate but similar function units: a wireless remote control and a base unit. The base unit is mounted to the mattress body. The wireless remote control is a handheld or tabletop unit. User can use either the wireless remote control or the base unit to program and control the system.
    • 可编程热控电加热床垫包括常规床垫,基于微处理器的电子控制器和加热元件。 加热元件是可移动的垫,其紧固到床垫的上表面或下层的材料上。 当用户躺在床垫上时,加热元件的位置和尺寸使得它覆盖使用者的下身(脚和腿)。 通过向脚提供热量,热量通过血流自然转移到身体的其他部分。 该设计可最大限度地降低健康风险,节省能源和成本,并为用户创造舒适的渐变热区。 基于可编程微处理器的电子控制器提供了自动控制加热垫温度和开/关时间以及监控系统安全性的特点。 在一个实施例中,电子控制器安装在床垫主体的侧面。 在第二实施例中,控制器包括两个单独但相似的功能单元:无线遥控器和基座单元。 基座安装在床垫本体上。 无线遥控器是手持式或台式机。 用户可以使用无线遥控器或基本单元对系统进行编程和控制。
    • 7. 发明授权
    • Temperature-compensated fiber grating packaging arrangement
    • 温度补偿光纤光栅包装布置
    • US07212707B2
    • 2007-05-01
    • US10621094
    • 2003-07-14
    • Henry Huang
    • Henry Huang
    • G02B6/00G02B6/34
    • G02B6/0218
    • A passive temperature-compensated optical grating arrangement includes a housing of low CTE material, with the optical grating stretched across the housing between a first, fixed sidewall and a lever arm, the lever arm also being formed of a low CTE material. An expansion element of high CTE material is attached to the frame and disposed to contact the lever arm, resulting in rotating the lever arm as changes in temperature change the dimensions of the expansion element. By properly sizing the lever arm and the expansion element, changes in grating wavelength as a function of temperature can be compensated for by adjusting the strain applied to the grating as it is pulled or compressed as the lever arm is moved.
    • 无源温度补偿光栅装置包括低CTE材料的壳体,光栅在第一固定侧壁和杠杆臂之间横跨壳体延伸,杠杆臂也由低CTE材料形成。 高CTE材料的膨胀元件附接到框架并且设置成接触杠杆臂,导致当温度变化改变膨胀元件的尺寸时使杠杆臂旋转。 通过适当调整杠杆臂和膨胀元件的尺寸,可以通过调节在杠杆臂移动时拉动或压缩施加到光栅的应变来补偿光栅波长随温度变化的变化。
    • 8. 发明申请
    • DEFECT INSPECTION DEVICE AND INSPECTING METHOD THEREOF
    • 缺陷检查装置及其检测方法
    • US20060226356A1
    • 2006-10-12
    • US10907678
    • 2005-04-12
    • Henry HuangYongSeng Tan
    • Henry HuangYongSeng Tan
    • G01N23/00
    • G01N23/2251
    • An inspecting method comprises the following steps. A plurality of defect inspection devices is formed on a wafer. Each defect inspection device comprises an insulating layer and a conductive layer stacked over the insulating layer. A defect inspection parameter is set and the wafer is scanned with an electron beam to obtain a plurality of defect signals. The number of defect signals is checked to determine if it is equal to the number of defect inspection devices. If the number of defect signals is smaller than the number of defect inspection devices, the defect inspection parameter is readjusted and the aforementioned step of performing an electron beam scanning and checking for equality between the number of defect signals and the number of defect inspection devices are repeated. The process is complete when the number of defect signals is at least equal to the number of defect inspection devices.
    • 检查方法包括以下步骤。 在晶片上形成多个缺陷检查装置。 每个缺陷检查装置包括绝缘层和层叠在绝缘层上的导电层。 设置缺陷检查参数,并用电子束扫描晶片以获得多个缺陷信号。 检查缺陷信号的数量以确定其是否等于缺陷检查装置的数量。 如果缺陷信号的数量小于缺陷检查装置的数量,则重新调整缺陷检查参数,进行电子束扫描的检查和缺陷信号的数量与缺陷检查装置的数量的相等的上述步骤是 重复。 当缺陷信号的数量至少等于缺陷检查装置的数量时,该过程完成。