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1. 发明授权

US09030867B2 Bipolar CMOS select device for resistive sense memory 有权
标题翻译：用于电阻读出存储器的双极CMOS选择器件
公开(公告)号：US09030867B2
公开(公告)日：2015-05-12
申请号：US12502211
申请日：2009-07-13
申请人： Yong Lu , Hongyue Liu , Maroun Khoury , Yiran Chen
发明人： Yong Lu , Hongyue Liu , Maroun Khoury , Yiran Chen
IPC分类号： G11C11/00 , G11C11/34 , G11C13/00 , G11C11/16
CPC分类号： G11C13/0004 , G11C11/16 , G11C11/1659 , G11C11/1675 , G11C13/0011 , G11C13/003 , G11C13/004 , G11C2213/76
摘要： A resistive sense memory apparatus includes a bipolar select device having a semiconductor substrate and a plurality of transistors disposed in the semiconductor substrate and forming a row or transistors. Each transistor includes an emitter contact and a collector contact. Each collector contact is electrically isolated from each other and each emitter contact is electrically isolated from each other. A gate contact extends along a channel region between the emitter contact and a collector contact. A base contact is disposed within the semiconductor substrate such that the emitter contact and a collector contact is between the gate contact and the base contact. A resistive sense memory cells is electrically coupled to each collector contact or emitter contact and a bit line.
摘要翻译：电阻式感测存储装置包括具有半导体衬底和设置在半导体衬底中并形成行或晶体管的多个晶体管的双极选择器件。每个晶体管包括发射极触点和集电极触点。每个集电极触点彼此电隔离，并且每个发射极触点彼此电隔离。栅极触点沿发射极触点和集电极触点之间的沟道区域延伸。基极触点设置在半导体衬底内，使得发射极触点和集电极触点位于栅极触点和基极触点之间。电阻读出存储单元电耦合到每个集电极触点或发射极触点和位线。

2. 发明授权

US08520432B2 Magnetic memory with separate read and write paths 失效
标题翻译：具有独立读写路径的磁记忆体
公开(公告)号：US08520432B2
公开(公告)日：2013-08-27
申请号：US12974699
申请日：2010-12-21
申请人： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
发明人： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
IPC分类号： G11C11/14
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.
摘要翻译：公开了具有分离的读和写路径的磁存储器。磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有自由磁化方向。第一磁化取向与第二磁化取向相反。隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。位线电耦合到第二端部。源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

3. 发明授权

US08514605B2 MRAM diode array and access method 有权
标题翻译： MRAM二极管阵列和访问方式
公开(公告)号：US08514605B2
公开(公告)日：2013-08-20
申请号：US13611225
申请日：2012-09-12
申请人： Yiran Chen , Hai Li , Hongyue Liu , Yong Lu , Song S. Xue
发明人： Yiran Chen , Hai Li , Hongyue Liu , Yong Lu , Song S. Xue
IPC分类号： G11C5/08 , G11C27/00 , G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： A memory unit includes a magnetic tunnel junction data cell is electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a write current through the magnetic tunnel junction data cell. A first diode is electrically between the magnetic tunnel junction data cell and the source line and a second diode is electrically between the magnetic tunnel junction data cell and the source line. The first diode and second diode are in parallel electrical connection, and having opposing forward bias directions. The memory unit is configured to be precharged to a specified precharge voltage level and the precharge voltage is less than a threshold voltage of the first diode and second diode.
摘要翻译：存储单元包括磁性隧道结数据单元电耦合到位线和源极线。磁隧道结数据单元被配置为通过使写入电流通过磁性隧道结数据单元而在高电阻状态和低电阻状态之间切换。第一二极管电磁性地在磁性隧道结数据单元和源极线之间，第二个二极管电气地在磁性隧道结数据单元和源极线之间。第一二极管和第二二极管并联电连接并具有相反的正向偏压方向。存储器单元被配置为预充电到指定的预充电电压电平，并且预充电电压小于第一二极管和第二二极管的阈值电压。

4. 发明授权

US08416614B2 Spin-transfer torque memory non-destructive self-reference read method 有权
标题翻译：旋转转矩记忆无损自参考读取方法
公开(公告)号：US08416614B2
公开(公告)日：2013-04-09
申请号：US13349044
申请日：2012-01-12
申请人： Yiran Chen , Hai Li , Hongyue Liu , Ran Wang , Dimitar V. Dimitrov
发明人： Yiran Chen , Hai Li , Hongyue Liu , Ran Wang , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1673 , G11C11/1693
摘要： A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.
摘要翻译：自参考读取自旋传递扭矩存储单元的方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。磁性隧道结数据单元具有第一电阻状态。然后，该方法包括通过具有第一电阻状态的磁性隧道结数据单元施加第二读取电流。第一个读取电流小于第二个读取电流。然后将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是高电阻状态还是低电阻状态。

5. 发明授权

US08400825B2 Magnetic field assisted stram cells 失效
标题翻译：磁场辅助电极
公开(公告)号：US08400825B2
公开(公告)日：2013-03-19
申请号：US13491891
申请日：2012-06-08
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

6. 发明授权

US08296620B2 Data devices including multiple error correction codes and methods of utilizing 有权
标题翻译：数据设备包括多个纠错码和利用方法
公开(公告)号：US08296620B2
公开(公告)日：2012-10-23
申请号：US12198516
申请日：2008-08-26
申请人： Yiran Chen , Hai Li , Hongyue Liu , Yong Lu , Song S. Xue
发明人： Yiran Chen , Hai Li , Hongyue Liu , Yong Lu , Song S. Xue
IPC分类号： G06F11/00
CPC分类号： G06F11/1048 , G11C2029/0411
摘要： A method of utilizing at least one block of data, wherein the at least one block of data includes a plurality of cells for storing data and at least one error flag bit, the method including: scanning the block of data for errors; determining the error rate of the block of data; and applying an error correction code to data being read from or written to a cell within the at least one block of data, wherein the error correction code is applied based on the error rate, wherein a weak error correction code is applied when the error rate is below an error threshold, and a strong error correction code is applied when the error rate is at or above the error threshold.
摘要翻译：一种使用至少一个数据块的方法，其中所述至少一个数据块包括用于存储数据的多个单元和至少一个误差标志位，所述方法包括：扫描所述数据块的错误; 确定数据块的错误率; 以及对所述至少一个数据块中的单元读取或写入的数据应用纠错码，其中，基于所述错误率应用所述纠错码，其中当所述错误率低于错误阈值，并且当错误率处于或高于错误阈值时应用强纠错码。

7. 发明申请

US20120250405A1 MAGNETIC FIELD ASSISTED STRAM CELLS 失效
标题翻译：磁场辅助细胞
公开(公告)号：US20120250405A1
公开(公告)日：2012-10-04
申请号：US13491891
申请日：2012-06-08
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/16 , G11C11/14
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

8. 发明授权

US08199558B2 Apparatus for variable resistive memory punchthrough access method 有权
标题翻译：用于可变电阻存储器穿透访问方法的装置
公开(公告)号：US08199558B2
公开(公告)日：2012-06-12
申请号：US13042508
申请日：2011-03-08
申请人： Maroun Georges Khoury , Hongyue Liu , Brian Lee , Andrew John Gjevre Carter
发明人： Maroun Georges Khoury , Hongyue Liu , Brian Lee , Andrew John Gjevre Carter
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.
摘要翻译：描述了可变电阻穿透访问方法。所述方法包括通过使写入电流沿着第一方向通过磁性隧道结数据单元，将可变电阻数据单元从高电阻状态切换到低电阻状态。写入电流由电耦合到可变电阻数据单元和源极线的晶体管提供。写入电流在穿通模式下通过晶体管。

9. 发明授权

US08139397B2 Spatial correlation of reference cells in resistive memory array 有权
标题翻译：参考电池在电阻式存储器阵列中的空间相关性
公开(公告)号：US08139397B2
公开(公告)日：2012-03-20
申请号：US12968438
申请日：2010-12-15
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Henry Huang , Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Henry Huang , Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G11C5/025 , G11C11/1653 , G11C11/1673
摘要： The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array and mapping a location of each measured variable resistive memory cell to form a map of the resistance state resistance values for a plurality of variable resistive memory cells within a memory array. Then a column or row is selected to be a reference column or reference row based on the map of the resistance state resistance value for a plurality of variable resistive memory cells within a memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.
摘要翻译：本公开涉及将参考列或参考行选择性地放置在存储器阵列中的方法。该方法包括测量存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值，并映射每个测量的可变电阻存储单元的位置，以形成多个可变电阻存储单元的电阻状态电阻值的映射在内存阵列内。然后，基于存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值的映射来选择列或行作为参考列或参考行，以最小化读取操作错误，以及形成可变电阻存储器单元存储器阵列。

10. 发明授权

US08125819B2 Asymmetric write current compensation using gate overdrive for resistive sense memory cells 有权
公开(公告)号：US08125819B2
公开(公告)日：2012-02-28
申请号：US13206749
申请日：2011-08-10
申请人： Yong Lu , Harry Hongyue Liu
发明人： Yong Lu , Harry Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/1659 , G11C11/1675 , G11C13/0069 , G11C2013/0071 , G11C2013/0073 , G11C2013/0078 , G11C2213/32 , G11C2213/79
摘要： Apparatus and associated method for asymmetric write current compensation for resistive sense memory (RSM) cells, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM) cells. In accordance with some embodiments, an RSM cell includes an RSM element coupled to a switching device. The switching device has a plurality of terminals. A control circuit compensates for asymmetric write characteristics of the RSM cell by limiting a range of voltage differentials across the terminals so as to be equal to or less than a magnitude of a source voltage applied to the switching device, thereby providing bi-directional write currents of substantially equal magnitude through the RSM element.

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