专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08343830B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08343830B2
公开(公告)日：2013-01-01
申请号：US12059754
申请日：2008-03-31
申请人： Hideaki Kikuchi , Kouichi Nagai
发明人： Hideaki Kikuchi , Kouichi Nagai
IPC分类号： H01L21/8242
CPC分类号： H01L28/40 , H01L21/76814 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L21/76897 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L2924/3011
摘要： There is provided a method for manufacturing a semiconductor device, including, forming a first insulating film on a semiconductor substrate, forming a capacitor on the first insulating film, forming a second insulating film covering the capacitor, forming a metal wiring on the second insulating film, forming a first capacitor protective insulating film covering the metal wiring and the second insulating film, forming an insulating sidewall on a side of the metal wiring, forming a third insulating film on the insulating sidewall, forming a hole by etching the third insulating film under a condition that an etching rate of the insulating sidewall would be lower than that of the third insulating film, and forming a conductive plug inside the hole.
摘要翻译：提供了一种制造半导体器件的方法，包括在半导体衬底上形成第一绝缘膜，在第一绝缘膜上形成电容器，形成覆盖电容器的第二绝缘膜，在第二绝缘膜上形成金属布线形成覆盖所述金属布线和所述第二绝缘膜的第一电容器保护绝缘膜，在所述金属布线的侧面上形成绝缘侧壁，在所述绝缘侧壁上形成第三绝缘膜，通过蚀刻所述第三绝缘膜而形成孔绝缘侧壁的蚀刻速度比第三绝缘膜低的条件，在孔内形成导电塞。

2. 发明授权

US08034506B2 Fuel cell 有权
标题翻译：燃料电池
公开(公告)号：US08034506B2
公开(公告)日：2011-10-11
申请号：US11712738
申请日：2007-03-01
申请人： Hideaki Kikuchi , Narutoshi Sugita , Norimasa Kawagoe , Masaru Oda , Takashi Kosaka , Takeshi Banba , Yasuhiro Watanabe
发明人： Hideaki Kikuchi , Narutoshi Sugita , Norimasa Kawagoe , Masaru Oda , Takashi Kosaka , Takeshi Banba , Yasuhiro Watanabe
IPC分类号： H01M2/38
CPC分类号： H01M8/026 , H01M8/0258 , H01M8/0267 , H01M8/1007 , H01M8/241
摘要： A fuel gas flow field is formed on a surface of a rectangular first metal separator. The fuel gas flow field includes flow grooves extending in the direction of gravity. An outlet buffer is provided at a lower end of the fuel gas flow field. The outlet buffer includes an inclined surface inclined toward a fuel gas discharge passage. The fuel gas discharge passage is positioned below the outlet buffer. Outlet channel grooves are formed by ridges provided between the fuel gas discharge passage and the outlet buffer. Lower ends of the ridges are arranged in a zigzag pattern.
摘要翻译：燃料气体流场形成在矩形第一金属分离器的表面上。燃料气体流场包括在重力方向上延伸的流动槽。出口缓冲器设置在燃料气体流场的下端。出口缓冲器包括朝向燃料气体排出通道倾斜的倾斜表面。燃料气体排出通道位于出口缓冲器下方。出口通道槽由设置在燃料气体排出通道和出口缓冲器之间的脊部形成。脊的下端以锯齿形图案布置。

3. 发明申请

US20100248395A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100248395A1
公开(公告)日：2010-09-30
申请号：US12796955
申请日：2010-06-09
申请人： Hideaki KIKUCHI , Kouichi NAGAI
发明人： Hideaki KIKUCHI , Kouichi NAGAI
IPC分类号： H01L21/02
CPC分类号： H01L27/11507 , H01L21/76834 , H01L27/11502 , H01L28/57 , H01L28/65
摘要： A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage that occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.
摘要翻译：在半导体衬底上形成设置有铁电体膜（10a）的强电介质电容器，然后形成与铁电电容器的电极（9a，11a）直接连接的配线（17）。然后，形成覆盖布线（17）的氧化硅膜（18）。作为氧化硅膜（18），形成具有比氧化铝膜高的加工性的膜。此外，当形成绝缘膜时在铁电电容器中发生的一定程度的损伤等于或小于形成氧化铝膜时的损伤程度。

4. 发明申请

US20100001372A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100001372A1
公开(公告)日：2010-01-07
申请号：US12500262
申请日：2009-07-09
申请人： Yukimasa Miyazaki , Kouichi Nagai , Hideaki Kikuchi
发明人： Yukimasa Miyazaki , Kouichi Nagai , Hideaki Kikuchi
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L27/11507 , H01L21/76802 , H01L21/76804 , H01L21/76829 , H01L21/76832 , H01L27/11509
摘要： Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.
摘要翻译：即使当在设置有接触孔的层之间存在氧化铝膜时，也可以获得稳定的接触孔形成。该方法包括在半导体衬底上形成第一元件层的步骤; 在所述第一元件层上形成第一层间绝缘膜; 在所述第一层间绝缘膜上形成第二元件层; 在所述第二元件层上形成第二层间绝缘膜; 在所述第二层间绝缘膜上形成孔抗蚀剂图案; 通过蚀刻第二层间绝缘膜进行用于形成空穴的第一蚀刻; 以及通过蚀刻所述第一层间绝缘膜进行第二蚀刻以将孔延伸到所述第一元件层。

5. 发明申请

US20090278231A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090278231A1
公开(公告)日：2009-11-12
申请号：US12458496
申请日：2009-07-14
申请人： Kouichi Nagai , Hideaki Kikuchi , Naoya Sashida , Yasutaka Ozaki
发明人： Kouichi Nagai , Hideaki Kikuchi , Naoya Sashida , Yasutaka Ozaki
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L27/11502 , H01L21/02063 , H01L27/0688 , H01L27/11585 , H01L27/1159 , H01L28/57
摘要： The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to the second conductor plug 62 or the third conductor plug 62.
摘要翻译：半导体器件包括形成在半导体衬底10上的第一绝缘膜26，埋在第一接触孔28a中的第一导体插塞32，第一接触孔28a形成在源极/漏极扩散层22上，形成在第一绝缘膜26上的电容器44 在第一绝缘膜26上形成的覆盖电容器44的第一氢扩散防止膜48，形成在第一氢扩散防止膜上并具有表面平坦化的第二绝缘膜50，形成在第一氢上的第二氢扩散防止膜52 具有表面平坦化的扩散防止膜26，形成在第二绝缘膜50上的第二氢扩散防止膜52，埋在第二接触孔56中的第二导体插塞62，第二接触孔56形成在下电极38或下电极38的上电极42 电容器44，埋在第一接触孔58中的第三导体插头62，并形成在第一导体插塞32的下方连接到第二导体插头62或第三导体插头62的部分64。

6. 发明授权

US07459231B2 Polymer electrolyte fuel cell stack and operating method thereof 失效
标题翻译：聚合物电解质燃料电池堆及其操作方法
公开(公告)号：US07459231B2
公开(公告)日：2008-12-02
申请号：US10469878
申请日：2002-03-05
申请人： Yoshinori Wariishi , Naoyuki Enjoji , Hideaki Kikuchi , Narutoshi Sugita , Masaharu Suzuki , Seiji Sugiura
发明人： Yoshinori Wariishi , Naoyuki Enjoji , Hideaki Kikuchi , Narutoshi Sugita , Masaharu Suzuki , Seiji Sugiura
IPC分类号： H01M8/04 , H01M8/10 , H01M8/24
CPC分类号： H01M8/04119 , H01M8/0202 , H01M8/0263 , H01M8/04097 , H01M8/241 , H01M8/2457 , H01M8/249 , H01M8/2495 , H01M2300/0082
摘要： A fuel cell stack (10) includes a first sub-stack (12), a second sub-stack (14), and a third sub-stack (16) disposed in the flow direction of an oxidizing gas. An intermediate plate (18a) is interposed between the first and second sub-stacks (12, 14), and an intermediate plate (18b) is interposed between the second and third sub-stacks (14, 16). In this fuel stack (10), the flow of an oxidizing gas is set such that the oxidizing gas flows in series in the direction from the first sub-stack (12) to the third sub-stack (16). Between the sub-stacks additional oxidizing gas supplies (70,74) are provided through which oxidizing gas of lower humidity than the humidity of the oxidizing gas entering the first sub-stack is supplied. This arrangement allows an efficient management of the humidity water content of the oxidizing gas with sufficient moisturizing of the solid polymer membrane whilst avoiding excessive condensation of water vapour within the stack.
摘要翻译：燃料电池堆（10）包括沿氧化气体的流动方向设置的第一子堆（12），第二子堆（14）和第三子堆（16）。中间板（18a）插入在第一和第二子堆叠（12,14）之间，并且中间板（18b）插入在第二和第三子堆叠（14,16）之间。在该燃料堆（10）中，氧化气体的流动被设定为使得氧化气体沿从第一副堆叠（12）到第三子堆（16）的方向串联流动。在副堆叠之间，提供另外的氧化气体供应源（70,74），通过该氧化剂供应源供应比进入第一子堆的氧化气体的湿度低的氧化气体。这种布置允许通过足够的固体聚合物膜的保湿来有效地管理氧化气体的湿度含水量，同时避免堆叠内的水蒸气过度冷凝。

7. 发明申请

US20080006867A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080006867A1
公开(公告)日：2008-01-10
申请号：US11849715
申请日：2007-09-04
申请人： Hideaki Kikuchi , Kouichi Nagai
发明人： Hideaki Kikuchi , Kouichi Nagai
IPC分类号： H01L29/94
CPC分类号： H01L27/11507 , H01L21/76834 , H01L27/11502 , H01L28/57 , H01L28/65
摘要： A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage which occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.
摘要翻译：在半导体衬底上形成设置有铁电体膜（10A）的铁电电容器，然后形成与铁电电容器的电极（9a，11a）直接连接的配线（17）。然后，形成覆盖布线（17）的氧化硅膜（18）。作为氧化硅膜（18），形成具有比氧化铝膜高的加工性的膜。此外，当形成绝缘膜时在铁电电容器中发生的损伤程度等于或小于形成氧化铝膜时的损伤程度。

8. 发明申请

US20070207372A1 Fuel cell 有权
标题翻译：燃料电池
公开(公告)号：US20070207372A1
公开(公告)日：2007-09-06
申请号：US11712738
申请日：2007-03-01
申请人： Hideaki Kikuchi , Narutoshi Sugita , Norimasa Kawagoe , Masaru Oda , Takashi Kosaka , Takeshi Banba , Yasuhiro Watanabe
发明人： Hideaki Kikuchi , Narutoshi Sugita , Norimasa Kawagoe , Masaru Oda , Takashi Kosaka , Takeshi Banba , Yasuhiro Watanabe
IPC分类号： H01M8/02 , H01M8/10
CPC分类号： H01M8/026 , H01M8/0258 , H01M8/0267 , H01M8/1007 , H01M8/241
摘要： A fuel gas flow field is formed on a surface of a rectangular first metal separator. The fuel gas flow field includes flow grooves extending in the direction of gravity. An outlet buffer is provided at a lower end of the fuel gas flow field. The outlet buffer includes an inclined surface inclined toward a fuel gas discharge passage. The fuel gas discharge passage is positioned below the outlet buffer. Outlet channel grooves are formed by ridges provided between the fuel gas discharge passage and the outlet buffer. Lower ends of the ridges are arranged in a zigzag pattern.
摘要翻译：燃料气体流场形成在矩形第一金属分离器的表面上。燃料气体流场包括在重力方向上延伸的流动槽。出口缓冲器设置在燃料气体流场的下端。出口缓冲器包括朝向燃料气体排出通道倾斜的倾斜表面。燃料气体排出通道位于出口缓冲器下方。出口通道槽由设置在燃料气体排出通道和出口缓冲器之间的脊部形成。脊的下端以锯齿形图案布置。

9. 发明授权

US07255945B2 Compact fuel cell system with efficient power generation performance 有权
标题翻译：紧凑型燃料电池系统，具有高效的发电性能
公开(公告)号：US07255945B2
公开(公告)日：2007-08-14
申请号：US10316512
申请日：2002-12-10
申请人： Naoyuki Enjoji , Masaharu Suzuki , Hideaki Kikuchi
发明人： Naoyuki Enjoji , Masaharu Suzuki , Hideaki Kikuchi
IPC分类号： H01M8/00 , H01M8/04 , H01M2/00
CPC分类号： H01M8/04089
摘要： A fuel cell system for supplying electricity to a main motor as a power source includes a fuel cell stack and pumps for supplying a fuel gas and an oxygen-containing gas to the fuel cell stack. The fuel cell system further includes a driving force transmitting mechanism. The driving force transmitting mechanism connects the main motor, the pumps, and the supercharger for driving the pumps and the supercharger by the main motor.
摘要翻译：用于向作为电源的主电动机供电的燃料电池系统包括燃料电池堆和用于向燃料电池堆提供燃料气体和含氧气体的泵。燃料电池系统还包括驱动力传递机构。驱动力传递机构通过主电机连接主电机，泵和增压器，用于驱动泵和增压器。

10. 发明申请

US20070111083A1 Fuel cell stack having gas discharge passage and drainage passage joined at one end of the stack 有权
标题翻译：具有气体排出通道和排放通道的燃料电池堆叠在堆叠的一端连接
公开(公告)号：US20070111083A1
公开(公告)日：2007-05-17
申请号：US11599925
申请日：2006-11-14
申请人： Hideaki Kikuchi , Masaru Oda , Masaharu Suzuki , Norimasa Kawagoe
发明人： Hideaki Kikuchi , Masaru Oda , Masaharu Suzuki , Norimasa Kawagoe
IPC分类号： H01M8/24 , H01M8/10
CPC分类号： H01M8/242 , H01M8/0256 , H01M8/0263 , H01M8/0265 , H01M8/04156 , H01M8/241 , H01M8/2483 , H01M2008/1095 , Y02P70/56
摘要： A fuel cell stack includes stacked unit fuel cells provided between end holding members, each unit fuel cell having a membrane electrode assembly including an anode and a cathode. A pair of separators respectively contact the anode and the cathode, and respectively form reaction gas passages between one separator and the anode, and between the other separator and the cathode. For each reaction gas passage, a gas supply passage and a gas discharge passage are formed through the unit fuel cells and one end holding member so that they communicate with the reaction gas passage of each unit fuel cell, and a drainage passage is also formed through the unit fuel cells and one end holding member. An end of the drainage passage and an end of the gas discharge passage on the side of the other end holding member are joined to each other.
摘要翻译：燃料电池堆包括设置在端部保持构件之间的堆叠单元燃料电池，每个单位燃料电池具有包括阳极和阴极的膜电极组件。一对分离器分别接触阳极和阴极，分别在一个分离器和阳极之间以及另一个分离器和阴极之间形成反应气体通道。对于每个反应气体通道，通过单元燃料电池和一端保持构件形成气体供给通道和气体排出通道，使得它们与每个单位燃料电池的反应气体通道连通，并且还形成排水通道单元燃料电池和一端保持构件。排水通道的一端和排气通道在另一端保持构件一侧的端部彼此接合。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式