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    • 5. 发明授权
    • Pattern forming method, method of manufacturing thin film transistor substrate, method of manufacturing liquid crystal display and exposure mask
    • 图案形成方法,制造薄膜晶体管基板的方法,制造液晶显示器和曝光掩模的方法
    • US07279257B2
    • 2007-10-09
    • US10768998
    • 2004-01-30
    • Hideaki Takizawa
    • Hideaki Takizawa
    • G02F7/20
    • H01L27/1288G03F1/00H01L27/1214
    • The invention relates to a pattern forming method, a method of manufacturing a TFT substrate, a method of manufacturing a liquid crystal display and an exposure mask and provides a pattern forming method, a method of manufacturing a TFT substrate, a method of manufacturing a liquid crystal display and an exposure mask which make it possible to provide a liquid crystal display having high display characteristics. In a pattern forming method for forming a resist pattern extending across a first divided exposure region and a second divided exposure region among a plurality of divided exposure regions on a substrate, a resist film is formed on the substrate; the resist film in the first divided exposure region is exposed using an exposure mask to form a latent image which defines one edge of a resist pattern in the vicinity of a boundary between the first divided exposure region and the second divided exposure region; the resist film in the second divided exposure region is exposed using another exposure mask to form a latent image which defines another edge of the resist pattern in the vicinity of the boundary; and the resist film is developed to form the resist pattern.
    • 本发明涉及一种图案形成方法,一种制造TFT基板的方法,一种制造液晶显示器和一种曝光掩模的方法,提供一种图案形成方法,一种制造TFT基板的方法,一种制造液体的方法 晶体显示器和曝光掩模,这使得可以提供具有高显示特性的液晶显示器。 在基板上的多个分割曝光区域中形成延伸穿过第一分割曝光区域和第二分割曝光区域的抗蚀剂图案的图案形成方法中,在基板上形成抗蚀剂膜; 使用曝光掩模曝光第一分割曝光区域中的抗蚀剂膜,以在第一分割曝光区域和第二分割曝光区域之间的边界附近形成限定抗蚀剂图案的一个边缘的潜像; 第二分割曝光区域中的抗蚀剂膜用另一曝光掩模曝光,形成在边界附近限定抗蚀剂图案的另一边缘的潜像; 并且抗蚀剂膜被显影以形成抗蚀剂图案。
    • 9. 发明授权
    • Thin film transistor matrix device
    • 薄膜晶体管矩阵器件
    • US5483082A
    • 1996-01-09
    • US174030
    • 1993-12-28
    • Hideaki TakizawaYasuhiro NasuKazuhiro WatanabeShiro HirotaKazuo NonakaSeii SatoTeiji Majima
    • Hideaki TakizawaYasuhiro NasuKazuhiro WatanabeShiro HirotaKazuo NonakaSeii SatoTeiji Majima
    • G02F1/136G02F1/13G02F1/1333G02F1/1345G02F1/1362G02F1/1368H01L21/336H01L27/12H01L29/78H01L29/786
    • G02F1/13458G02F1/136213H01L27/12G02F1/1345G02F1/13452G02F2001/133357
    • A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.
    • 一种薄膜晶体管矩阵器件,包括透明绝缘衬底,薄膜晶体管单元,像素单元,存储电容单元,栅极端子单元和漏极端子单元,所述存储电容单元包括形成在 透明绝缘基板,由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极,对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此,可以简化TFT矩阵器件的制造工艺,并且可以实现更低的成本。 可以防止存储电容的特性变化,并且可以提高产量和可靠性。