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    • 3. 发明授权
    • Method for pattern formation
    • 图案形成方法
    • US07931819B2
    • 2011-04-26
    • US11727158
    • 2007-03-23
    • Naoko KiharaHiroyuki Hieda
    • Naoko KiharaHiroyuki Hieda
    • H01L21/302
    • H01L21/3086B82Y10/00Y10S438/942
    • There is provided a method for pattern formation, including a step of coating a composition comprising a block copolymer, a silicon compound, and a solvent for dissolving these components onto an object to form a layer of the composition on the object, a step of subjecting the layer of the composition to self-organization of the block copolymer to cause phase separation into a first phase, in which the silicon compound is localized, having higher etching resistance by heat treatment or/and oxygen plasma treatment, and a second phase comprising a polymer phase and having lower etching resistance by heat treatment or/and oxygen plasma treatment, and thereby forming a pattern layer with a fine pattern, and a step of etching the object using as a mask the thus formed pattern layer.
    • 提供了一种形成图案的方法,其包括将包含嵌段共聚物,硅化合物和溶剂的组合物涂布到物体上以形成该物质层的步骤, 所述组合物层自组织所述嵌段共聚物以引起相分离成其中所述硅化合物定位的第一相,通过热处理或/和氧等离子体处理具有较高的耐蚀刻性,以及第二相,其包含 聚合物相,并且通过热处理或/和氧等离子体处理具有较低的耐腐蚀性,从而形成具有精细图案的图案层,以及使用由此形成的图案层作为掩模蚀刻该物体的步骤。