会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • DEPOSITION DEVICE AND DEPOSITION METHOD USING JOULE HEATING
    • 沉积装置和沉积方法使用JOULE加热
    • US20140050847A1
    • 2014-02-20
    • US13589508
    • 2012-08-20
    • Jae-Sang ROWon-Eui HongSeog-Young LeeIngoo Jang
    • Jae-Sang ROWon-Eui HongSeog-Young LeeIngoo Jang
    • C23C16/448C23C16/52C23C16/458
    • C23C14/24C23C14/04C23C14/12
    • Provided are a deposition method of patterning a thin film on a substrate using momentary Joule heating in a vacuum environment, and a method thereof. The deposition device forms a deposition target layer on one surface of a source substrate as a pattern to be deposited. A deposition target layer forming unit forms a deposition target layer on the one surface of the source substrate to cover the conductive layer. A chamber in a vacuum state receives the source substrate on which the conductive layer and the deposition target layer are formed and the target substrate. A target substrate is disposed in the chamber to face the source substrate. A power supply applies power to the conductive layer to heat-generate the conductive layer. A configuration of the deposition device is very simple, and it is easy to uniformly form a deposition thickness.
    • 提供了一种在真空环境中使用瞬时焦耳加热在基板上图案化薄膜的沉积方法及其方法。 沉积装置在源极衬底的一个表面上形成沉积靶层作为要沉积的图案。 沉积靶层形成单元在源极基板的一个表面上形成沉积靶层以覆盖导电层。 处于真空状态的室接收其上形成有导电层和沉积靶层的源极基板和靶基板。 目标衬底设置在腔室中以面对源极衬底。 电源对导电层施加电力以热导电层。 沉积装置的结构非常简单,容易均匀地形成沉积厚度。
    • 10. 发明申请
    • APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM
    • 用于制造多晶硅薄膜的装置
    • US20100313397A1
    • 2010-12-16
    • US12864622
    • 2009-01-30
    • Jae-Sang RoWon-Eui Hong
    • Jae-Sang RoWon-Eui Hong
    • H01L21/20
    • H01L21/02532H01L21/02595H01L21/02667H01L21/02672H01L21/67109H01L27/1281H01L27/1285Y10T29/41
    • Provided is an apparatus for manufacturing a polysilicon thin film by depositing an amorphous silicon thin film and an upper silicon dioxide substrate on a lower silicon dioxide substrate, forming a conductive thin film on the upper silicon dioxide substrate, and applying an electric field and performing Joule heating to crystallize the amorphous silicon thin film, the apparatus comprising power terminals for elastically contacting both upper ends of the conductive thin film and supplying power to the conductive thin film, and support members for elastically supporting the substrate such that the power terminals closely contact both upper ends of the conductive thin film to form a uniform electric field at the conductive thin film. Therefore, it is possible to apply an electric field to a conductive thin film and perform Joule heating to crystallize an amorphous silicon thin film, and support members are installed at both lower surfaces of a silicon dioxide substrate to elastically support the silicon dioxide substrate such that power terminals closely contact both upper ends of the conductive thin film, thereby forming a uniform electric field at the conductive thin film to efficiently perform crystallization within a short time.
    • 提供了一种通过在下部二氧化硅衬底上沉积非晶硅薄膜和上部二氧化硅衬底来制造多晶硅薄膜的装置,在上部二氧化硅衬底上形成导电薄膜,并施加电场并执行焦耳 加热以使非晶硅薄膜结晶,该装置包括用于弹性地接触导电薄膜的上端并向导电薄膜供电的装置,以及用于弹性地支撑基板的支撑构件,使得电源端子紧密接触两者 导电薄膜的上端在导电薄膜上形成均匀的电场。 因此,可以对导电薄膜施加电场,进行焦耳加热以使非晶硅薄膜结晶,并且将支撑构件安装在二氧化硅基板的两个下表面以弹性地支撑二氧化硅基板,使得 电源端子紧密接触导电薄膜的两个上端,从而在导电薄膜处形成均匀的电场,以在短时间内有效地进行结晶。