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1. 发明申请

US20180190686A1 MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF ARRAY SUBSTRATE 审中-公开
公开(公告)号：US20180190686A1
公开(公告)日：2018-07-05
申请号：US15127371
申请日：2016-07-20
申请人： Shenzhen China Star Optoelectronics Technology Co. Ltd.
发明人： Bufang ZHANG , Songshan LI
IPC分类号： H01L27/12 , H01L29/786 , H01L29/66
CPC分类号： H01L27/1281 , H01L21/26513 , H01L21/266 , H01L27/1222 , H01L27/124 , H01L27/1274 , H01L27/1288 , H01L27/1296 , H01L29/66757 , H01L29/66765 , H01L29/78675
摘要： The invention provides a manufacturing method of a thin film transistor and a manufacturing method of an array substrate. A photoresist is used to define a to-be-doped region of an amorphous silicon layer to thereby make a crystallization be occurred in a source contact region and a drain contact region. A crystallization direction is from the source contact region and the drain contact region towards a channel region, so that it can realize directional crystallization as far as possible, and therefore can improve crystallization efficiency and crystallization uniformity, reduce an influence of grain boundary applied to electron mobility and leakage current of the TFT and improve electrical characteristics of the TFT.

2. 发明授权

US09899419B2 Semiconductor device and semiconductor device production system 有权
公开(公告)号：US09899419B2
公开(公告)日：2018-02-20
申请号：US14924100
申请日：2015-10-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L29/786 , H01L27/12 , H01L21/3213 , H01L21/02 , B23K26/073 , H01L21/20 , H01L21/84 , H01L29/66
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

3. 发明授权

US09647089B2 Thin film transistor substrate, display apparatus including the same, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus 有权
公开(公告)号：US09647089B2
公开(公告)日：2017-05-09
申请号：US14696257
申请日：2015-04-24
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Woonghee Jeong , Joonhwa Bae , Youngki Shin , Yoonho Khang
IPC分类号： H01L29/78 , H01L29/66 , H01L29/786 , H01L27/12 , H01L21/02
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02675 , H01L27/1281 , H01L29/78675
摘要： Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.

4. 发明申请

US20170062538A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC LIGHT-EMITTING DISPLAY 审中-公开
标题翻译：薄膜晶体管，其制造方法和有机发光显示器
公开(公告)号：US20170062538A1
公开(公告)日：2017-03-02
申请号：US15019048
申请日：2016-02-09
申请人： Samsung Display Co., Ltd.
发明人： Junghyun Kim , Kiwan Ahn
IPC分类号： H01L27/32 , H01L27/12 , H01L29/66 , H01L51/52
CPC分类号： H01L27/1274 , H01L27/1218 , H01L27/1222 , H01L27/1229 , H01L27/1281 , H01L29/66757
摘要： A thin film transistor array substrate comprises a substrate including a driving transistor region and a switching transistor region, an additional layer disposed in the driving transistor region on the substrate, a buffer layer disposed on the substrate to cover the additional layer, and a driving transistor and a switching transistor disposed in the driving transistor region and the switching transistor region, respectively, on the buffer layer.
摘要翻译：薄膜晶体管阵列基板包括基板，其包括驱动晶体管区域和开关晶体管区域，设置在基板上的驱动晶体管区域中的附加层，设置在基板上以覆盖附加层的缓冲层，以及驱动晶体管以及分别设置在缓冲层上的驱动晶体管区域和开关晶体管区域中的开关晶体管。

5. 发明申请

US20170033134A1 LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE STRUCTURE AND MANUFACTURE METHOD THEREOF 有权
标题翻译：低温聚硅薄膜基板结构及其制造方法
公开(公告)号：US20170033134A1
公开(公告)日：2017-02-02
申请号：US14758964
申请日：2015-04-22
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Xiaoxing ZHANG
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1296 , H01L27/1218 , H01L27/1222 , H01L27/124 , H01L27/1262 , H01L27/1274 , H01L27/1281 , H01L27/3262 , H01L29/78675 , H01L29/78696
摘要： The present invention provides a Low Temperature Poly-silicon TFT substrate structure and a manufacture method thereof. By providing the buffer layers in the drive TFT area and the display TFT area with different thicknesses, of which the thickness of the buffer layer in the drive TFT area is larger, and the thickness of the buffer layer in the display TFT area is smaller, different temperature grades are formed in the crystallization process of the polysilicon to achieve the control to the grain diameters of the crystals. The polysilicon layer with larger lattice dimension is formed in the drive TFT area in the crystallization process to raise the electron mobility. The fractured crystals of polysilicon layer in the display TFT area can be obtained in the crystallization process for ensuring the uniformity of the grain boundary and raising the uniformity of the current. Accordingly, the electrical property demands for different TFTs can be satisfied to raise the light uniformity of the OLED.
摘要翻译：本发明提供一种低温多晶硅TFT基板结构及其制造方法。通过在驱动TFT区域中提供缓冲层和不同厚度的显示TFT区域，其中驱动TFT区域中的缓冲层的厚度较大，并且显示TFT区域中缓冲层的厚度较小，在多晶硅的结晶过程中形成不同的温度等级，以实现对晶体的晶粒直径的控制。晶格尺寸较大的多晶硅层在晶化过程中形成在驱动TFT区域，以提高电子迁移率。在用于确保晶界的均匀性并提高电流的均匀性的结晶过程中可以获得显示TFT区域中的多晶硅层的断裂晶体。因此，可以满足不同TFT的电性能要求，以提高OLED的光均匀性。

6. 发明授权

US09520421B1 Method for manufacturing LTPS TFT substrate and LTPS TFT substrate 有权
标题翻译：制造LTPS TFT基板和LTPS TFT基板的方法
公开(公告)号：US09520421B1
公开(公告)日：2016-12-13
申请号：US14771502
申请日：2015-06-29
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Songshan Li
IPC分类号： H01L27/12 , H01L21/02 , H01L29/66 , H01L21/265
CPC分类号： H01L27/1281 , H01L21/02422 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/02672 , H01L21/26513 , H01L27/1262 , H01L29/66757
摘要： The present invention provides a method for manufacturing a LTPS TFT substrate and a LTPS TFT substrate. The method for manufacturing the LTPS TFT substrate of the present invention forms a thermally conductive electrical insulation layer having excellent properties of electrical insulation and thermal conductivity on a buffer layer to quickly absorb a great amount of heat during a RTA process to be transferred to an amorphous silicon layer in contact therewith so that the portion of the amorphous silicon at this site shows an increased efficiency of crystallization, whereby polycrystalline silicon has an increased grain size and reduced gain boundaries and thus the mobility of charge carriers of a corresponding TFT device is increased and the influence of the leakage current caused by grain boundary is reduced. The LTPS TFT substrate of the present invention includes a thermally conductive electrical insulation layer formed on a buffer layer at a location exactly under a polycrystalline silicon semiconductor layer and the grain size of the crystallization of the polycrystalline silicon is relatively large, the grain boundaries are reduced in number, the mobility of charge carriers of a TFT device is increased, and the electrical property of the TFT is improved.
摘要翻译：本发明提供一种制造LTPS TFT基板和LTPS TFT基板的方法。本发明的LTPS TFT基板的制造方法形成了在缓冲层上具有优异的电绝缘性和导热性的导热电绝缘层，以在RTA工艺中快速吸收大量的热量以转移到非晶态硅层与其接触，使得该位置处的非晶硅部分显示提高的结晶效率，由此多晶硅具有增加的晶粒尺寸和减小的增益边界，因此相应的TFT器件的电荷载流子的迁移率增加，晶界引起的漏电流的影响减小。本发明的LTPS TFT基板包括形成在位于多晶硅半导体层正下方的位置的缓冲层上的导热电绝缘层，并且多晶硅的结晶晶粒尺寸相对较大，晶界减小在TFT器件中，电荷载流子的迁移率增加，TFT的电性能提高。

7. 发明申请

US20160104726A1 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND METHOD OF MANUFACTURING DISPLAY APPARATUS 有权
标题翻译：薄膜晶体管基板，包括其的显示装置，制造薄膜晶体管基板的方法和制造显示装置的方法
公开(公告)号：US20160104726A1
公开(公告)日：2016-04-14
申请号：US14696257
申请日：2015-04-24
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Woonghee Jeong , Joonhwa Bae , Youngki Shin , Yoonho Khang
IPC分类号： H01L27/12 , H01L21/02 , H01L29/423 , H01L29/786 , H01L29/66
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02675 , H01L27/1281 , H01L29/78675
摘要： Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.
摘要翻译：薄膜晶体管基板包括：基板; 基底上的晶体硅层; 以及覆盖所述晶体硅层并且包括具有第一厚度的第一部分和具有大于所述第一厚度的第二厚度的第二部分的覆盖层。

8. 发明授权

US09236487B2 Method of manufacturing substrate having thin film thereabove, method of manufacturing thin-film-device substrate, thin-film substrate, and thin-film-device substrate 有权
标题翻译：制造其上具有薄膜的衬底的方法，薄膜器件衬底的制造方法，薄膜衬底和薄膜器件衬底
公开(公告)号：US09236487B2
公开(公告)日：2016-01-12
申请号：US14187692
申请日：2014-02-24
申请人： JOLED INC.
发明人： Tomohiko Oda , Takahiro Kawashima
IPC分类号： H01L21/20 , H01L21/36 , H01L29/786 , H01L21/02 , H01L21/324 , H01L21/268 , H01L27/12
CPC分类号： H01L29/78663 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02658 , H01L21/02678 , H01L21/02683 , H01L21/02691 , H01L21/268 , H01L21/324 , H01L27/1222 , H01L27/1229 , H01L27/1274 , H01L27/1281 , H01L27/1285
摘要： A method of manufacturing a substrate having a thin film thereabove includes: forming a thin film above the substrate; and crystallizing at least a predetermined area of the silicon thin film into a crystallized area through relative scan of the silicon thin film which is performed while the thin film is being irradiated with a continuous wave light beam, wherein in the crystallizing, a projection of the light beam on the thin film has a major axis in a direction crossing a direction of the relative scan, and the formed crystallized area includes a strip-shaped first area extending in the direction crossing the direction of the relative scan and a second area adjacent to the strip-shaped first area, the strip-shaped first area including crystal grains having an average grain size larger than that of crystal grains in the second area.
摘要翻译：制造其上具有薄膜的基板的方法包括：在基板上形成薄膜; 并且通过在薄膜被连续波束光束照射下进行的硅薄膜的相对扫描，将硅薄膜的至少预定面积结晶化为结晶区域，其中在结晶时，薄膜上的光束在与相对扫描的方向交叉的方向上具有长轴，并且所形成的结晶区域包括沿与相对扫描方向交叉的方向延伸的条状的第一区域和与相对扫描方向相邻的第二区域所述带状第一区域，所述带状第一区域包括平均晶粒尺寸大于所述第二区域中的晶粒的晶粒尺寸的晶粒。

9. 发明申请

US20150155390A1 MANUFACTURING METHOD OF POLYSILICON LAYER, AND POLYSILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：多晶硅层的制造方法和多晶硅薄膜晶体管及其制造方法
公开(公告)号：US20150155390A1
公开(公告)日：2015-06-04
申请号：US14348699
申请日：2013-11-11
申请人： ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Zuqiang Wang
IPC分类号： H01L29/786 , H01L29/16 , H01L29/66 , H01L21/306 , H01L21/308 , H01L29/04 , H01L21/02
CPC分类号： H01L29/78672 , H01L21/02532 , H01L21/02592 , H01L21/02642 , H01L21/02645 , H01L21/02667 , H01L21/02675 , H01L21/02686 , H01L21/02694 , H01L21/30604 , H01L21/3081 , H01L21/3083 , H01L27/1277 , H01L27/1281 , H01L27/1288 , H01L29/04 , H01L29/16 , H01L29/6675
摘要： A manufacturing method of a polysilicon layer and a manufacturing method of a polysilicon thin film transistor. The manufacturing method of the polysilicon layer includes: providing a substrate; forming a barrier layer and a buffer layer on the substrate; disposing a plurality of grooves in the buffer layer by a patterning process, and forming crystal seeds on the buffer layer; forming an amorphous silicon layer on the buffer layer provided with the grooves and on the crystal seeds; transferring the amorphous silicon layer into a polysilicon layer using a thermal treatment process.
摘要翻译：多晶硅层的制造方法以及多晶硅薄膜晶体管的制造方法。多晶硅层的制造方法包括：提供基板; 在衬底上形成阻挡层和缓冲层; 通过图案化工艺在缓冲层中设置多个槽，并在缓冲层上形成晶种; 在设置有凹槽的缓冲层上和晶体晶种上形成非晶硅层; 使用热处理工艺将非晶硅层转移到多晶硅层中。

10. 发明授权

US08890165B2 Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same 有权
标题翻译：形成多晶硅层的方法，薄膜晶体管，具有该多晶硅层的有机发光二极管显示装置及其制造方法
公开(公告)号：US08890165B2
公开(公告)日：2014-11-18
申请号：US12714154
申请日：2010-02-26
申请人： Dong-Hyun Lee , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Maxim Lisachenko , Byoung-Keon Park , Kil-Won Lee , Jae-Wan Jung
发明人： Dong-Hyun Lee , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Maxim Lisachenko , Byoung-Keon Park , Kil-Won Lee , Jae-Wan Jung
IPC分类号： H01L29/04 , H01L27/12 , H01L29/786 , H01L21/02 , H01L29/66
CPC分类号： H01L29/78675 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78696
摘要： A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法，薄膜晶体管（TFT），具有该多晶硅层的有机发光二极管（OLED）显示器件及其制造方法。形成多晶硅层的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成非晶硅层，在非晶硅层中形成沟槽，在非晶硅层上形成覆盖层，在所述覆盖层上形成金属催化剂层，对所述基板退火并将所述非晶硅层析出为多晶硅层。

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