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1. 发明申请

US20110029268A1 METHODS FOR DELIVERING A PROCESS GAS 有权
标题翻译：提供工艺气体的方法
公开(公告)号：US20110029268A1
公开(公告)日：2011-02-03
申请号：US12887218
申请日：2010-09-21
申请人： Iqbal A. Shareef , James V. Tietz , Vernon Wong , Richard J. Meinecke
发明人： Iqbal A. Shareef , James V. Tietz , Vernon Wong , Richard J. Meinecke
IPC分类号： G06F19/00 , G01F25/00
CPC分类号： G01F25/0053 , Y10T137/7722
摘要： A method for delivering a process gas to a reaction chamber of a plasma processing system using a recipe having a recipe flow rate is provided. The method includes delivering the process gas by a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one pressure sensor. The method also includes applying, using a programmed computing device, a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.
摘要翻译：提供了一种使用具有配方流量的食谱将处理气体输送到等离子体处理系统的反应室的方法。该方法包括通过由质量流量控制器（MFC）控制的气体输送系统将工艺气体输送到孔口。先前通过对气体进行加压来计算预测流量。进一步预先计算的预测流量通过至少一个压力传感器测量气体的一组上游压力值。该方法还包括使用编程的计算设备应用一组校准因子的校准因子来确定预测流量，校准因子是该组上游压力值的平均值与一组的平均值之比的金上游压力值。

2. 发明申请

US20080115560A1 METHODS FOR PERFORMING ACTUAL FLOW VERIFICATION 有权
标题翻译：执行实际流程验证的方法
公开(公告)号：US20080115560A1
公开(公告)日：2008-05-22
申请号：US11938171
申请日：2007-11-09
申请人： Iqbal A. Shareef , James V. Tietz , Vernon Wong , Richard J. Meinecke
发明人： Iqbal A. Shareef , James V. Tietz , Vernon Wong , Richard J. Meinecke
IPC分类号： G01F25/00
CPC分类号： G01F25/0053 , Y10T137/7722
摘要： A method for determining an actual gas flow rate in a reaction chamber of a plasma processing system is provided. The method includes delivering gas fay a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice, which is located upstream from the reaction chamber. The method also includes pressurizing the gas to create a choked flow condition within the orifice. The method further includes measuring a set of upstream pressure values of the gas via a set of pressure sensors. The method yet also includes applying a calibration factor of a set of calibration factors to determine the actual flow rate. The calibration factor is a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values, which is associated with an indicated flow rate for an MFC.
摘要翻译：提供了一种用于确定等离子体处理系统的反应室中的实际气体流量的方法。该方法包括将由质量流量控制器（MFC）控制的气体输送系统输送到位于反应室上游的孔口。该方法还包括对气体进行加压以在孔口内产生阻塞流动状态。该方法还包括经由一组压力传感器测量气体的一组上游压力值。该方法还包括应用一组校准因子的校准因子来确定实际流量。校准因子是一组上游压力值的平均值与一组黄金上游压力值的平均值的比值，其与MFC的指示流速相关联。

3. 发明授权

US07311852B2 Method of plasma etching low-k dielectric materials 有权
标题翻译：等离子体蚀刻低k电介质材料的方法
公开(公告)号：US07311852B2
公开(公告)日：2007-12-25
申请号：US09820695
申请日：2001-03-30
申请人： Si Yi Li , Helen H. Zhu , S. M. Reza Sadjadi , James V. Tietz , Bryan A. Helmer
发明人： Si Yi Li , Helen H. Zhu , S. M. Reza Sadjadi , James V. Tietz , Bryan A. Helmer
IPC分类号： H01L21/3065
CPC分类号： H01L21/7681 , H01L21/31116 , H01L21/31138 , H01L21/76807
摘要： A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluorocarbon reactant and nitrogen reactant being supplied to a chamber of a plasma etch reactor at flow rates such that the fluorocarbon reactant flow rate is less than the nitrogen reactant flow rate. The etch rate of the low-k dielectric layer can be at least 5 times higher than that of a silicon dioxide, silicon nitride, silicon oxynitride or silicon carbide mask layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.
摘要翻译：一种半导体制造工艺，其中低k电介质层被等离子体蚀刻，对上覆掩模层具有选择性。蚀刻剂气体可以是无氧的并且包括氟碳反应物，氮反应物和任选的载气，所述碳氟反应物和氮反应物以流速供给到等离子体蚀刻反应器的室，使得碳氟化合物反应物流速为小于氮气反应物流量。低k电介质层的蚀刻速率可以比二氧化硅，氮化硅，氮氧化硅或碳化硅掩模层的蚀刻速率高至少5倍。该方法对于在形成结构如镶嵌结构中蚀刻0.25微米和较小的接触或通孔开口是有用的。

4. 发明授权

US07166535B2 Plasma etching of silicon carbide 失效
标题翻译：碳化硅等离子体蚀刻
公开(公告)号：US07166535B2
公开(公告)日：2007-01-23
申请号：US10430013
申请日：2003-05-06
申请人： Si Yi Li , S. M. Reza Sadjadi , James V. Tietz
发明人： Si Yi Li , S. M. Reza Sadjadi , James V. Tietz
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A process for plasma etching silicon carbide with selectivity to an overlying and/or underlying dielectric layer of material. The dielectric material can comprise silicon dioxide, silicon oxynitride, silicon nitride or various low-k dielectric materials including organic low-k materials. The etching gas includes a chlorine containing gas such as Cl2, an oxygen containing gas such as O2, and a carrier gas such as Ar. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrate.
摘要翻译：用于等离子体蚀刻碳化硅的方法，其具有对材料的上覆和/或下层介电层的选择性。介电材料可以包括二氧化硅，氮氧化硅，氮化硅或包括有机低k材料的各种低k电介质材料。蚀刻气体包括诸如Cl 2的含氯气体，诸如O 2的含氧气体和诸如Ar的载气。为了实现对这种介电材料的期望的选择性，选择等离子体蚀刻气体化学物质以在较慢的速率蚀刻电介质材料时实现所需的碳化硅蚀刻速率。该方法可用于选择性蚀刻氢化碳化硅蚀刻停止层或碳化硅衬底。

5. 发明授权

US06916746B1 Method for plasma etching using periodic modulation of gas chemistry 有权
标题翻译：使用气体化学周期调制的等离子体蚀刻方法
公开(公告)号：US06916746B1
公开(公告)日：2005-07-12
申请号：US10411520
申请日：2003-04-09
申请人： Eric A. Hudson , James V. Tietz
发明人： Eric A. Hudson , James V. Tietz
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase using first gas chemistry with a deposition gas chemistry, which is performed in about 0.0055 to 7 seconds for each cycle and performing an etching phase for the feature through the etch mask using a second gas chemistry using a reactive etching gas chemistry, which is performed in about 0.005 to 14 seconds for each cycle. The protective layer forming phase comprises providing the deposition gas and forming a plasma from the deposition gas. Each etching phase comprises providing a reactive etching gas and forming a plasma from the reactive etching gas.
摘要翻译：提供了一种用于在衬底上蚀刻层的方法。进行气体调制循环过程超过三个循环。每个循环包括使用具有沉积气体化学性质的第一气体化学物质执行保护层形成阶段，其在每个循环中以约0.0055至7秒进行，并且通过使用第二气体化学品通过蚀刻掩模对该特征进行蚀刻阶段，反应性蚀刻气体化学，其在每个循环中以约0.005至14秒钟进行。保护层形成阶段包括提供沉积气体并从沉积气体形成等离子体。每个蚀刻阶段包括提供反应性蚀刻气体并从反应性蚀刻气体形成等离子体。

6. 发明授权

US6035100A Reflector cover for a semiconductor processing chamber 失效
标题翻译：用于处理衬底同时减少反射器上的沉积的装置和方法
公开(公告)号：US6035100A
公开(公告)日：2000-03-07
申请号：US858089
申请日：1997-05-16
申请人： Benjamin Bierman , David S. Ballance , James V. Tietz , Brian Haas , Meredith J. Williams , Paul Deaton
发明人： Benjamin Bierman , David S. Ballance , James V. Tietz , Brian Haas , Meredith J. Williams , Paul Deaton
IPC分类号： G01J5/00 , H01L21/00 , H01L21/26 , F27B5/08 , F27B5/14 , H01L21/324
CPC分类号： H01L21/67017 , G01J5/0003
摘要： In one embodiment, the invention is directed to an apparatus for preventing depositions from occurring on a reflector in a processing chamber, comprising: a cover disposed adjacent to the reflector, the cover optically transparent over a range of wavelengths in which the reflector is reflective; and at least one cover support for maintaining the position of the cover relative to the reflector.
摘要翻译：在一个实施例中，本发明涉及一种用于防止在处理室中的反射器上发生沉积的装置，包括：邻近反射器布置的盖，所述盖在反射器反射的波长范围内可光学透明; 以及用于保持盖相对于反射器的位置的至少一个盖支撑件。

7. 发明授权

US08521461B2 Apparatus for delivering a process gas 有权
标题翻译：用于输送处理气体的装置
公开(公告)号：US08521461B2
公开(公告)日：2013-08-27
申请号：US13436705
申请日：2012-03-30
申请人： Iqbal A. Shareef , James V. Tietz , Vernon Wong , Richard J. Meinecke
发明人： Iqbal A. Shareef , James V. Tietz , Vernon Wong , Richard J. Meinecke
IPC分类号： G01F1/12
CPC分类号： G01F25/0053 , Y10T137/7722
摘要： A processing system for delivering a process gas to a reaction chamber using a recipe having a recipe flow rate is provided. The processing system includes a gas flow delivery system configured for delivering the process gas, wherein said gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one sensor. The processing system also includes a programmed computing device configured for applying a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.
摘要翻译：提供了一种使用具有配方流量的食谱将处理气体输送到反应室的处理系统。处理系统包括配置用于输送处理气体的气体流量输送系统，其中由质量流量控制器（MFC）控制到气孔的所述气体流量输送系统。先前通过对气体进行加压来计算预测流量。预先计算的预测流量通过至少一个传感器测量气体的一组上游压力值。处理系统还包括编程计算装置，其被配置为施加一组校准因子的校准因子以确定预测流量，所述校准因子是该组上游压力值的平均值与一组的平均值的比率的金上游压力值。

8. 发明授权

US6135859A Chemical mechanical polishing with a polishing sheet and a support sheet 失效
标题翻译：用抛光片和支撑片进行化学机械抛光
公开(公告)号：US6135859A
公开(公告)日：2000-10-24
申请号：US304014
申请日：1999-04-30
申请人： James V. Tietz
发明人： James V. Tietz
IPC分类号： B24B21/12 , B24B37/04 , B24D7/12 , B24B1/00
CPC分类号： B24B21/12 , B24B37/04 , B24D7/12
摘要： A chemical mechanical polishing apparatus has a platen, a polishing sheet extending between a first roller and a second roller, and a support sheet extending between a third roller and a fourth roller. A portion of the polishing sheet extends over a surface of the platen to polish a substrate, and a portion of the support sheet extends between the platen and the polishing sheet. The polishing sheet may be a continuous belt or a reel-to-reel tape, and the support sheet may be a continuous belt or reel-to-reel tape.
摘要翻译：化学机械抛光装置具有压板，在第一辊和第二辊之间延伸的抛光片，以及在第三辊和第四辊之间延伸的支撑片。抛光片的一部分在压板的表面上延伸以抛光衬底，并且支撑片的一部分在压板和抛光片之间延伸。抛光片可以是连续带或卷对卷带，并且支撑片可以是连续的带或卷对卷带。

9. 发明授权

US6132295A Apparatus and method for grinding a semiconductor wafer surface 失效
标题翻译：用于研磨半导体晶片表面的装置和方法
公开(公告)号：US6132295A
公开(公告)日：2000-10-17
申请号：US373096
申请日：1999-08-12
申请人： James V. Tietz , John M. White
发明人： James V. Tietz , John M. White
IPC分类号： B24B41/047 , B24B1/00 , B24B7/04 , B24B7/20 , B24B7/22 , B24B41/06 , H01L21/304
CPC分类号： B24B37/30 , B24B41/06 , B24B7/228
摘要： A semiconductor wafer fabrication apparatus includes a carrier head for holding a wafer and distributing a downward pressure across a back surface of the wafer. The apparatus also includes a wafer processing station disposed near the carrier head. The station includes a grinding wheel and a flat fluid bearing. The fluid bearing provides an upward pressure against a front surface of the wafer to substantially flatten the front surface of the wafer and conform it to the flatness of the bearing surface. The face of the wafer can move with very little friction across the bearing surface. The grinding wheel can be raised into contact with the front surface of the wafer and rotated to grind the front surface while the fluid bearing provides the upward pressure and the carrier head distributes the downward pressure. The technique can be used to planarize a wafer having one or more previously-formed layers despite variations in thickness of the wafer or warpage of the wafer.
摘要翻译：半导体晶片制造装置包括用于保持晶片并且在晶片的后表面上分布向下的压力的载体头。该设备还包括设置在承载头附近的晶片处理站。该车站包括砂轮和扁平流体轴承。流体轴承提供抵靠晶片前表面的向上压力，以使晶片的前表面基本平坦化，并使其符合轴承表面的平坦度。晶片的表面可以以非常小的摩擦力在轴承表面上移动。砂轮可以升高成与晶片的前表面接触并且旋转以研磨前表面，同时流体轴承提供向上的压力并且承载头分配向下的压力。该技术可以用于平面化具有一个或多个预先形成的层的晶片，尽管晶片厚度的变化或晶片翘曲。

10. 发明授权

US5920797A Method for gaseous substrate support 失效
标题翻译：气体底物支撑方法
公开(公告)号：US5920797A
公开(公告)日：1999-07-06
申请号：US758699
申请日：1996-12-03
申请人： David S. Ballance , Benjamin Bierman , James V. Tietz , Brian Haas
发明人： David S. Ballance , Benjamin Bierman , James V. Tietz , Brian Haas
IPC分类号： H01L21/22 , H01L21/00 , H01L21/205 , H01L21/26 , H01L21/31 , H01L21/683
CPC分类号： H01L21/67115 , H01L21/6838 , Y10S438/909
摘要： A method of reducing stress on a substrate in a thermal processing chamber. The method includes the steps of supporting a first portion of a substrate by means of contacting the same such that a second portion of the substrate is not contacted, part of the second portion forming one wall of a cavity, and flowing a gas into the cavity such that the pressure of the gas exerts a force on the second portion to at least partially support the second portion.
摘要翻译：一种降低热处理室中的衬底上的应力的方法。该方法包括以下步骤：通过使基板的第一部分接触而支撑基板的第一部分，使得基板的第二部分不接触，形成空腔的一个壁的第二部分的一部分并将气体流入腔使得气体的压力在第二部分上施加力以至少部分地支撑第二部分。

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