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    • 1. 发明申请
    • METHODS FOR DELIVERING A PROCESS GAS
    • 提供工艺气体的方法
    • US20110029268A1
    • 2011-02-03
    • US12887218
    • 2010-09-21
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • G06F19/00G01F25/00
    • G01F25/0053Y10T137/7722
    • A method for delivering a process gas to a reaction chamber of a plasma processing system using a recipe having a recipe flow rate is provided. The method includes delivering the process gas by a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one pressure sensor. The method also includes applying, using a programmed computing device, a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.
    • 提供了一种使用具有配方流量的食谱将处理气体输送到等离子体处理系统的反应室的方法。 该方法包括通过由质量流​​量控制器(MFC)控制的气体输送系统将工艺气体输送到孔口。 先前通过对气体进行加压来计算预测流量。 进一步预先计算的预测流量通过至少一个压力传感器测量气体的一组上游压力值。 该方法还包括使用编程的计算设备应用一组校准因子的校准因子来确定预测流量,校准因子是该组上游压力值的平均值与一组的平均值之比 的金上游压力值。
    • 2. 发明申请
    • METHODS FOR PERFORMING ACTUAL FLOW VERIFICATION
    • 执行实际流程验证的方法
    • US20080115560A1
    • 2008-05-22
    • US11938171
    • 2007-11-09
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • G01F25/00
    • G01F25/0053Y10T137/7722
    • A method for determining an actual gas flow rate in a reaction chamber of a plasma processing system is provided. The method includes delivering gas fay a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice, which is located upstream from the reaction chamber. The method also includes pressurizing the gas to create a choked flow condition within the orifice. The method further includes measuring a set of upstream pressure values of the gas via a set of pressure sensors. The method yet also includes applying a calibration factor of a set of calibration factors to determine the actual flow rate. The calibration factor is a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values, which is associated with an indicated flow rate for an MFC.
    • 提供了一种用于确定等离子体处理系统的反应室中的实际气体流量的方法。 该方法包括将由质量流量控制器(MFC)控制的气体输送系统输送到位于反应室上游的孔口。 该方法还包括对气体进行加压以在孔口内产生阻塞流动状态。 该方法还包括经由一组压力传感器测量气体的一组上游压力值。 该方法还包括应用一组校准因子的校准因子来确定实际流量。 校准因子是一组上游压力值的平均值与一组黄金上游压力值的平均值的比值,其与MFC的指示流速相关联。
    • 3. 发明授权
    • Methods for delivering a process gas
    • 交付工艺气体的方法
    • US08150646B2
    • 2012-04-03
    • US12887218
    • 2010-09-21
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • G06F19/00G01F1/12
    • G01F25/0053Y10T137/7722
    • A method for delivering a process gas to a reaction chamber of a plasma processing system using a recipe having a recipe flow rate is provided. The method includes delivering the process gas by a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one pressure sensor. The method also includes applying, using a programmed computing device, a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.
    • 提供了一种使用具有配方流量的食谱将处理气体输送到等离子体处理系统的反应室的方法。 该方法包括通过由质量流​​量控制器(MFC)控制的气体输送系统将工艺气体输送到孔口。 先前通过对气体进行加压来计算预测流量。 进一步预先计算的预测流量通过至少一个压力传感器测量气体的一组上游压力值。 该方法还包括使用编程的计算设备应用一组校准因子的校准因子来确定预测流量,校准因子是该组上游压力值的平均值与一组的平均值之比 的金上游压力值。
    • 4. 发明授权
    • Apparatus for delivering a process gas
    • 用于输送处理气体的装置
    • US08521461B2
    • 2013-08-27
    • US13436705
    • 2012-03-30
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • G01F1/12
    • G01F25/0053Y10T137/7722
    • A processing system for delivering a process gas to a reaction chamber using a recipe having a recipe flow rate is provided. The processing system includes a gas flow delivery system configured for delivering the process gas, wherein said gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one sensor. The processing system also includes a programmed computing device configured for applying a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.
    • 提供了一种使用具有配方流量的食谱将处理气体输送到反应室的处理系统。 处理系统包括配置用于输送处理气体的气体流量输送系统,其中由质量流量控制器(MFC)控制到气孔的所述气体流量输送系统。 先前通过对气体进行加压来计算预测流量。 预先计算的预测流量通过至少一个传感器测量气体的一组上游压力值。 处理系统还包括编程计算装置,其被配置为施加一组校准因子的校准因子以确定预测流量,所述校准因子是该组上游压力值的平均值与一组的平均值的比率 的金上游压力值。
    • 6. 发明授权
    • Methods for performing actual flow verification
    • 执行实际流程验证的方法
    • US07822570B2
    • 2010-10-26
    • US11938171
    • 2007-11-09
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • Iqbal A. ShareefJames V. TietzVernon WongRichard J. Meinecke
    • G01F1/12
    • G01F25/0053Y10T137/7722
    • A method for determining an actual gas flow rate in a reaction chamber of a plasma processing system is provided. The method includes delivering gas by a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice, which is located upstream from the reaction chamber. The method also includes pressurizing the gas to create a choked flow condition within the orifice. The method further includes measuring a set of upstream pressure values of the gas via a set of pressure sensors. The method yet also includes applying a calibration factor of a set of calibration factors to determine the actual flow rate. The calibration factor is a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values, which is associated with an indicated flow rate for an MFC.
    • 提供了一种用于确定等离子体处理系统的反应室中的实际气体流量的方法。 该方法包括通过由质量流​​量控制器(MFC)控制的气体输送系统将气体输送到位于反应室上游的孔口。 该方法还包括对气体进行加压以在孔口内产生阻塞流动状态。 该方法还包括经由一组压力传感器测量气体的一组上游压力值。 该方法还包括应用一组校准因子的校准因子来确定实际流量。 校准因子是一组上游压力值的平均值与一组金黄上游压力值的平均值的比值,其与MFC的指示流速相关联。
    • 7. 发明申请
    • APPARATUS FOR DELIVERING A PROCESS GAS
    • 提供过程气体的装置
    • US20120247581A1
    • 2012-10-04
    • US13436705
    • 2012-03-30
    • Iqbal A. ShareefJames V. TietzVermon WongRichard J. Meinecke
    • Iqbal A. ShareefJames V. TietzVermon WongRichard J. Meinecke
    • F16K21/00
    • G01F25/0053Y10T137/7722
    • A processing system for delivering a process gas to a reaction chamber using a recipe having a recipe flow rate is provided. The processing system includes a gas flow delivery system configured for delivering the process gas, wherein said gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one sensor. The processing system also includes a programmed computing device configured for applying a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.
    • 提供了一种使用具有配方流量的食谱将处理气体输送到反应室的处理系统。 处理系统包括配置用于输送处理气体的气体流量输送系统,其中由质量流量控制器(MFC)控制到气孔的所述气体流量输送系统。 先前通过对气体进行加压来计算预测流量。 预先计算的预测流量通过至少一个传感器测量气体的一组上游压力值。 处理系统还包括编程计算装置,其被配置为施加一组校准因子的校准因子以确定预测流量,所述校准因子是该组上游压力值的平均值与一组的平均值的比率 的金上游压力值。
    • 8. 发明授权
    • Methods for controlling time scale of gas delivery into a processing chamber
    • 控制气体输送到处理室的时间尺度的方法
    • US08340827B2
    • 2012-12-25
    • US12477196
    • 2009-06-03
    • Gunsu YunIqbal A. ShareefKurt JorgensenRobert Charatan
    • Gunsu YunIqbal A. ShareefKurt JorgensenRobert Charatan
    • G05D7/00G05D11/00G05D9/00G06F19/00G01F1/12F16K31/36B67D7/00
    • G05D7/0635Y10T137/7761
    • A method for establishing a mass flow controller (MFC) control scheme, which is configured for reducing a time scale for gas delivery into a processing chamber, for a recipe is provided. The method includes identifying a set of delayed gas species utilized during execution of the recipe with a set of delivery time slower than a target delivery time scale. The method also includes establishing an initial overshoot strength and an initial overshoot duration for each gas specie of the set of delayed gas species. The method further includes establishing MFC control scheme by adjusting an MFC hardware for each gas specie during the execution of the recipe. Adjusting the MFC hardware includes applying the initial overshoot strength for the initial overshoot duration to determine if the MFC control scheme provides for each gas specie a pressure profile within a target accuracy of an equilibrium pressure for the processing chamber.
    • 提供了一种用于建立质量流量控制器(MFC)控制方案,其被配置为用于减少用于配方的气体输送到处理室中的时间标度。 该方法包括在具有比目标递送时间标度慢的一组递送时间的情况下识别在执行配方期间使用的一组延迟气体种类。 该方法还包括为该组延迟气体种类的每种气体物质建立初始过冲强度和初始过冲持续时间。 该方法还包括在执行配方期间通过调整每种气体样品的MFC硬件来建立MFC控制方案。 调整MFC硬件包括对初始过冲持续时间应用初始过冲强度,以确定MFC控制方案是否为每种气体提供在处理室的平衡压力的目标精度内的压力分布。
    • 9. 发明授权
    • Heat shield for thermal processing
    • 用于热处理的隔热罩
    • US07176405B2
    • 2007-02-13
    • US11112647
    • 2005-04-22
    • Iqbal A. ShareefBoris GrekMichael O. Thompson
    • Iqbal A. ShareefBoris GrekMichael O. Thompson
    • B23K26/00
    • B23K26/703
    • A heat shield (10) that facilitates thermally processing a substrate (22) with a radiation beam (150) is disclosed. The heat shield is in the form of a cooled plate adapted to allow the radiation beam to communicate with the substrate upper surface (20) over a radiation beam path (BP), either through an aperture or a transparent region. The heat shield has an operating position that forms a relatively small gap (170) between the lower surface (54) of the heat shield and the upper surface of the wafer. The gap is sized such that the formation of convection cells (200) is suppressed during substrate surface irradiation. If convection cells do form, they are kept out of the radiation beam path. This prevents the radiation beam from wandering from the desired radiation beam path, which in turn allows for uniform heating of the substrate during thermal processing.
    • 公开了一种有助于用辐射束(150)热处理衬底(22)的隔热罩(10)。 隔热板是冷却板的形式,其适于允许辐射束通过光圈或透明区域在辐射束路径(BP)上与衬底上表面(20)连通。 隔热罩具有在隔热罩的下表面(54)和晶片的上表面之间形成相对小的间隙(170)的操作位置。 间隙的尺寸使得在衬底表面照射期间抑制形成对流电池(200)。 如果形成对流电池,则它们被保持在辐射束路径之外。 这防止辐射束从所需的辐射束路径移动,这又允许在热处理期间对衬底的均匀加热。