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1. 发明授权

US08518731B2 Manufacturing method of thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板的制造方法
公开(公告)号：US08518731B2
公开(公告)日：2013-08-27
申请号：US13310005
申请日：2011-12-02
申请人： Jeong Min Park , Dong-Won Woo , Je Hyeong Park , Sang Gab Kim , Jung-Soo Lee , Ji-Hyun Kim
发明人： Jeong Min Park , Dong-Won Woo , Je Hyeong Park , Sang Gab Kim , Jung-Soo Lee , Ji-Hyun Kim
IPC分类号： H01L21/00
CPC分类号： H01L29/786 , H01L27/124 , H01L27/1259 , H01L29/78645
摘要： A manufacturing method of a thin film transistor array panel includes: simultaneously forming a gate conductor and a first electrode on a substrate, using a non-peroxide-based etchant; forming a gate insulating layer on the gate conductor and the first electrode; forming a semiconductor, a source electrode, and a drain electrode on the gate insulating layer; forming a passivation layer on the semiconductor, the source electrode, and the drain electrode; and forming a second electrode layer on the passivation layer.
摘要翻译：薄膜晶体管阵列板的制造方法包括：使用非过氧化物的蚀刻剂，在基板上同时形成栅极导体和第一电极; 在所述栅极导体和所述第一电极上形成栅极绝缘层; 在栅极绝缘层上形成半导体，源电极和漏电极; 在半导体，源电极和漏电极上形成钝化层; 以及在所述钝化层上形成第二电极层。

2. 发明申请

US20120273787A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20120273787A1
公开(公告)日：2012-11-01
申请号：US13244086
申请日：2011-09-23
申请人： Hwa Yeul OH , O Sung Seo , Je Hyeong Park , Shin II Choi , Dong-Won Woo , Ji-Young Park , Jean Ho Song , Sang Gab Kim
发明人： Hwa Yeul OH , O Sung Seo , Je Hyeong Park , Shin II Choi , Dong-Won Woo , Ji-Young Park , Jean Ho Song , Sang Gab Kim
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： H01L27/1259 , G02F1/136286
摘要： In a thin film transistor array panel according to an exemplary embodiment of the present invention, a plasma process using a mixed gas including hydrogen gas and nitrogen gas with a ratio of a predetermined value is undertaken before depositing a passivation layer. In this manner, performance deterioration of the thin film transistor may be prevented and simultaneously, haze in a transparent electrode may be prevented. Alternatively, a first passivation layer is depsoited, then removed. A passivation layer is again re-deposited, such that little or no haze is present in the resulting passivation layer.
摘要翻译：在根据本发明的示例性实施例的薄膜晶体管阵列面板中，在沉积钝化层之前进行使用包括氢气和含有预定值的氮气的混合气体的等离子体处理。以这种方式，可以防止薄膜晶体管的性能恶化，并且同时可以防止透明电极中的雾度。或者，第一钝化层被剥离，然后除去。再次沉积钝化层，使得在所得钝化层中存在很少或没有雾度。

3. 发明授权

US08884861B2 Liquid crystal display and driving method thereof 有权
标题翻译：液晶显示及其驱动方法
公开(公告)号：US08884861B2
公开(公告)日：2014-11-11
申请号：US12421618
申请日：2009-04-09
申请人： Young-Wook Lee , Hwa-Yeul Oh , Pil-Sang Yun , Je-Hyeong Park
发明人： Young-Wook Lee , Hwa-Yeul Oh , Pil-Sang Yun , Je-Hyeong Park
IPC分类号： G02F1/1362 , G09G3/36 , G02F1/1343
CPC分类号： G02F1/13306 , G02F1/136213 , G02F1/13624 , G02F2001/134345 , G09G3/3659 , G09G2300/0443 , G09G2300/0447 , G09G2300/0809 , G09G2300/0876 , G09G2320/028
摘要： Embodiments of the present invention relate to a liquid crystal display and a driving method thereof. According to an embodiment, the liquid crystal display comprises a pixel electrode having a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other. The liquid crystal display comprises a first thin film transistor connected to the first subpixel electrode, a second thin film transistor connected to the second subpixel electrode, a third thin film transistor connected to the third subpixel electrode, and a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode. The liquid crystal display comprises a first gate line connected to the first to third thin film transistors, a second gate line connected to the fourth thin film transistor, a data line connected to the first and second thin film transistors, and a storage electrode line connected to the third thin film transistor.
摘要翻译：本发明的实施例涉及一种液晶显示器及其驱动方法。根据实施例，液晶显示器包括具有彼此电分离的第一子像素电极，第二子像素电极和第三子像素电极的像素电极。液晶显示器包括连接到第一子像素电极的第一薄膜晶体管，连接到第二子像素电极的第二薄膜晶体管，连接到第三子像素电极的第三薄膜晶体管和连接到第三子像素电极的第四薄膜晶体管第二子像素电极和第三子像素电极。液晶显示器包括连接到第一至第三薄膜晶体管的第一栅极线，连接到第四薄膜晶体管的第二栅极线，连接到第一和第二薄膜晶体管的数据线，以及连接到第一和第二薄膜晶体管的存储电极线到第三薄膜晶体管。

4. 发明授权

US08686423B2 Thin film transistor substrate and manufacturing method thereof 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08686423B2
公开(公告)日：2014-04-01
申请号：US13604082
申请日：2012-09-05
申请人： Sung-Ryul Kim , Jean-Ho Song , Jae-Hyoung Youn , O-Sung Seo , Byeong-Beom Kim , Je-Hyeong Park , Jong-In Kim , Jae-Jin Song
发明人： Sung-Ryul Kim , Jean-Ho Song , Jae-Hyoung Youn , O-Sung Seo , Byeong-Beom Kim , Je-Hyeong Park , Jong-In Kim , Jae-Jin Song
IPC分类号： H01L31/00
CPC分类号： H01L29/78603 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/66765
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the semiconductor layer, wherein the data line comprises a lower data layer, an upper data layer, a data oxide layer, and a buffer layer, wherein the upper data layer and the buffer layer comprise a same material.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，以及数据其中所述数据线包括下数据层，上数据层，数据氧化层和缓冲层，其中所述上数据层和所述缓冲层包括相同的材料。

5. 发明申请

US20110175088A1 Thin-Film Transistor Substrate and Method of Fabricating the Same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20110175088A1
公开(公告)日：2011-07-21
申请号：US13004665
申请日：2011-01-11
申请人： Jong In Kim , Young-Wook Lee , Jean-Ho Song , Jae-Hyoung Yoon , Sung-Ryul Kim , Byeong-Beom Kim , Je-Hyeong Park , Woo-Geun Lee
发明人： Jong In Kim , Young-Wook Lee , Jean-Ho Song , Jae-Hyoung Yoon , Sung-Ryul Kim , Byeong-Beom Kim , Je-Hyeong Park , Woo-Geun Lee
IPC分类号： H01L29/786 , H01L21/28
CPC分类号： H01L27/1225 , H01L27/124 , H01L27/1288
摘要： A thin-film transistor (TFT) substrate having reduced defects is fabricated using a reduced number of masks. The TFT substrate includes gate wiring formed on a substrate. The gate wiring includes a gate electrode. A semiconductor pattern is formed on the gate wiring. An etch-stop pattern is formed on the semiconductor pattern. Data wiring includes a source electrode which is formed on the semiconductor pattern and the etch-stop pattern. Each of the gate wiring and the data wiring includes a copper-containing layer and a buffer layer formed on or under the copper-containing layer.
摘要翻译：使用减少数量的掩模制造具有减少的缺陷的薄膜晶体管（TFT）基板。 TFT基板包括形成在基板上的栅极布线。栅极布线包括栅电极。在栅极布线上形成半导体图形。在半导体图案上形成蚀刻停止图案。数据布线包括形成在半导体图案上的源电极和蚀刻停止图案。栅极布线和数据布线中的每一个包括在含铜层上形成的含铜层和缓冲层。

6. 发明授权

US07238221B2 Metallic nickel powders, method for preparing the same, conductive paste, and MLCC 失效
标题翻译：金属镍粉末，其制备方法，导电浆料和MLCC
公开(公告)号：US07238221B2
公开(公告)日：2007-07-03
申请号：US10819918
申请日：2004-04-08
申请人： Soon-ho Kim , Jae-young Choi , Do-kyung Kim , Je-hyeong Park
发明人： Soon-ho Kim , Jae-young Choi , Do-kyung Kim , Je-hyeong Park
IPC分类号： B22F9/24
CPC分类号： H01G4/008 , B22F9/24 , B22F2998/00 , H01G4/012 , H01G4/30 , B22F1/0018
摘要： Provided are a method for preparing metallic nickel powders capable of decreasing the content of an alkaline metal in the metallic nickel powders, metallic nickel powders with the low content of an alkaline metal, a conductive paste including metallic nickel powders with the low content of an alkaline metal, and a multi-layer ceramic capacitor (MLCC) including a nickel inner electrode with the low content of an alkaline metal. The method for preparing the metallic nickel powders includes heating a mixture including an organic base, a nickel precursor compound, and a polyol. Wherein, the nickel precursor compound is converted to the metallic nickel powders through reduction by the organic base and the polyol. In the method, the organic base is used instead of the hydroxide of an alkaline metal such as NaOH and KOH. Therefore, the content of an alkaline metal such as sodium and potassium that can be incorporated as an impurity into the metallic nickel powders can be significantly reduced.
摘要翻译：提供了一种能够降低金属镍粉末中的碱金属含量的金属镍粉末的方法，碱金属含量低的金属镍粉末，含有碱性低的金属镍粉末的导电膏金属和包含碱金属含量低的镍内电极的多层陶瓷电容器（MLCC）。制备金属镍粉末的方法包括加热包括有机碱，镍前体化合物和多元醇的混合物。其中，镍前体化合物通过有机碱和多元醇的还原转化为金属镍粉末。在该方法中，使用有机碱代替NaOH和KOH等碱金属的氢氧化物。因此，可以显着降低作为杂质掺入到金属镍粉末中的碱金属如钠和钾的含量。

7. 发明授权

US08946025B2 Manufacturing method of thin film and metal line for display using the same, thin film transistor array panel, and method for manufacturing the same 有权
标题翻译：用于使用该显示器的薄膜和金属线的制造方法，薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08946025B2
公开(公告)日：2015-02-03
申请号：US12931516
申请日：2011-02-03
申请人： Byeong-Beom Kim , Je-Hyeong Park , Jae-Hyoung Youn , Jean-Ho Song , Jong-In Kim
发明人： Byeong-Beom Kim , Je-Hyeong Park , Jae-Hyoung Youn , Jean-Ho Song , Jong-In Kim
IPC分类号： H01L21/336 , H01L21/00 , H01L21/84 , H01L29/04 , H01L29/10 , H01L27/14 , H01L31/036 , H01L23/48 , C23C14/14 , C23C14/34 , H01L23/52 , H01L29/786
CPC分类号： H01L27/124 , C23C14/14 , C23C14/34 , H01L23/4827 , H01L23/52 , H01L29/786 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.
摘要翻译：根据本发明的示例性实施方案的薄膜的形成方法包括以大约1.5至大约3W / cm 2的功率密度和处于该范围内的惰性气体的压力形成薄膜大约0.2至大约0.3Pa。这个过程产生一个非晶金属薄膜阻挡层，防止相邻层的不期望的扩散，即使该阻挡层比许多传统的阻挡层薄。

8. 发明申请

US20110186843A1 Manufacturing method of thin film and metal line for display using the same, thin film transistor array panel, and method for manufacturing the same 有权
标题翻译：使用该薄膜和金属线的显示器的制造方法，薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20110186843A1
公开(公告)日：2011-08-04
申请号：US12931516
申请日：2011-02-03
申请人： Byeong-Beom Kim , Je-Hyeong Park , Jae-Hyoung Youn , Jean-Ho Song , Jong-In Kim
发明人： Byeong-Beom Kim , Je-Hyeong Park , Jae-Hyoung Youn , Jean-Ho Song , Jong-In Kim
IPC分类号： H01L29/786 , H01L21/336 , H01L23/52 , C23C14/34 , C23C14/14
CPC分类号： H01L27/124 , C23C14/14 , C23C14/34 , H01L23/4827 , H01L23/52 , H01L29/786 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.
摘要翻译：根据本发明的示例性实施方式的薄膜形成方法包括以大约1.5至大约3W / cm 2的功率密度形成薄膜，并且在惰性气体的压力范围内大约0.2至大约0.3Pa。这个过程产生一个非晶金属薄膜阻挡层，防止相邻层的不期望的扩散，即使该阻挡层比许多传统的阻挡层更薄。

9. 发明申请

US20100123842A1 LIQUID CRYSTAL DISPLAY AND DRIVING METHOD THEREOF 有权
标题翻译：液晶显示及其驱动方法
公开(公告)号：US20100123842A1
公开(公告)日：2010-05-20
申请号：US12421618
申请日：2009-04-09
申请人： Young-Wook LEE , Hwa-Yeul Oh , Pil-Sang Yun , Je-Hyeong Park
发明人： Young-Wook LEE , Hwa-Yeul Oh , Pil-Sang Yun , Je-Hyeong Park
IPC分类号： G02F1/1343 , G02F1/1368
CPC分类号： G02F1/13306 , G02F1/136213 , G02F1/13624 , G02F2001/134345 , G09G3/3659 , G09G2300/0443 , G09G2300/0447 , G09G2300/0809 , G09G2300/0876 , G09G2320/028
摘要： Embodiments of the present invention relate to a liquid crystal display and a driving method thereof. According to an embodiment, the liquid crystal display comprises a pixel electrode having a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other. The liquid crystal display comprises a first thin film transistor connected to the first subpixel electrode, a second thin film transistor connected to the second subpixel electrode, a third thin film transistor connected to the third subpixel electrode, and a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode. The liquid crystal display comprises a first gate line connected to the first to third thin film transistors, a second gate line connected to the fourth thin film transistor, a data line connected to the first and second thin film transistors, and a storage electrode line connected to the third thin film transistor.
摘要翻译：本发明的实施例涉及一种液晶显示器及其驱动方法。根据实施例，液晶显示器包括具有彼此电分离的第一子像素电极，第二子像素电极和第三子像素电极的像素电极。液晶显示器包括连接到第一子像素电极的第一薄膜晶体管，连接到第二子像素电极的第二薄膜晶体管，连接到第三子像素电极的第三薄膜晶体管和连接到第三子像素电极的第四薄膜晶体管第二子像素电极和第三子像素电极。液晶显示器包括连接到第一至第三薄膜晶体管的第一栅极线，连接到第四薄膜晶体管的第二栅极线，连接到第一和第二薄膜晶体管的数据线，以及连接到第一和第二薄膜晶体管的存储电极线到第三薄膜晶体管。

10. 发明申请

US20080043402A1 Metallic nickel powders, method for preparing the same, conductive paste, and MLCC 审中-公开
标题翻译：金属镍粉末，其制备方法，导电浆料和MLCC
公开(公告)号：US20080043402A1
公开(公告)日：2008-02-21
申请号：US11802402
申请日：2007-05-22
申请人： Soon-ho KIM , Jae-young Choi , Do-kyung Kim , Je-hyeong Park
发明人： Soon-ho KIM , Jae-young Choi , Do-kyung Kim , Je-hyeong Park
IPC分类号： H01G4/008 , C22C19/03 , H01B1/02
CPC分类号： H01G4/008 , B22F9/24 , B22F2998/00 , H01G4/012 , H01G4/30 , B22F1/0018
摘要： Provided are a method for preparing metallic nickel powders capable of decreasing the content of an alkaline metal in the metallic nickel powders, metallic nickel powders with the low content of an alkaline metal, a conductive paste including metallic nickel powders with the low content of an alkaline metal, and a multi-layer ceramic capacitor (MLCC) including a nickel inner electrode with the low content of an alkaline metal. The method for preparing the metallic nickel powders includes heating a mixture including an organic base, a nickel precursor compound, and a polyol. Wherein, the nickel precursor compound is converted to the metallic nickel powders through reduction by the organic base and the polyol. In the method, the organic base is used instead of the hydroxide of an alkaline metal such as NaOH and KOH. Therefore, the content of an alkaline metal such as sodium and potassium that can be incorporated as an impurity into the metallic nickel powders can be significantly reduced.
摘要翻译：提供了一种能够降低金属镍粉末中的碱金属含量的金属镍粉末的方法，碱金属含量低的金属镍粉末，含有碱性低的金属镍粉末的导电膏金属和包含碱金属含量低的镍内电极的多层陶瓷电容器（MLCC）。制备金属镍粉末的方法包括加热包括有机碱，镍前体化合物和多元醇的混合物。其中，镍前体化合物通过有机碱和多元醇的还原转化为金属镍粉末。在该方法中，使用有机碱代替NaOH和KOH等碱金属的氢氧化物。因此，可以显着降低作为杂质掺入到金属镍粉末中的碱金属如钠和钾的含量。

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