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1. 发明申请

US20120118366A1 DOUBLE-SIDED LIGHT-COLLECTING ORGANIC SOLAR CELL 审中-公开
标题翻译：双面收集有机太阳能电池
公开(公告)号：US20120118366A1
公开(公告)日：2012-05-17
申请号：US13387613
申请日：2010-07-07
申请人： Jea-Gun Park , Su-Hwan Lee , Ji-Heon Kim , Dal-Ho Kim
发明人： Jea-Gun Park , Su-Hwan Lee , Ji-Heon Kim , Dal-Ho Kim
IPC分类号： H01L51/44
CPC分类号： H01L27/302
摘要： Disclosed is a double-sided light-collecting organic solar cell. The double-sided light-collecting organic solar cell comprises: a first light-transmitting electrode; a first photoactive layer disposed on the first light-transmitting electrode; a reflective electrode disposed on the first photoactive layer; a second photoactive layer disposed on the reflective electrode; and a second light-transmitting electrode disposed on the second photoactive layer. According to the present invention, photoactive layers are formed on both sides of a reflective electrode in the middle, and light-transmitting electrodes are formed to enable light to be absorbed at both sides of a cell, to increase the light absorption of the cell and enable the production of a highly efficient organic solar cell.
摘要翻译：公开了一种双面收光有机太阳能电池。双面收集有机太阳能电池包括：第一透光电极; 设置在第一透光电极上的第一光敏层; 设置在所述第一光活性层上的反射电极; 设置在反射电极上的第二光敏层; 以及设置在所述第二光活性层上的第二透光电极。根据本发明，在中间的反射电极的两侧形成光敏层，并且形成透光电极以使光能够在电池的两侧被吸收，以增加电池的光吸收，能够生产高效的有机太阳能电池。

2. 发明申请

US20090275188A1 Slurry for polishing phase change material and method for patterning polishing phase change material using the same 审中-公开
标题翻译：用于抛光相变材料的浆料以及使用其进行图案化抛光相变材料的方法
公开(公告)号：US20090275188A1
公开(公告)日：2009-11-05
申请号：US12383858
申请日：2009-03-27
申请人： Jea Gun Park , Un Gyu Paik , Jin Hyung Park , Hee Sub Hwang , Hao Cui , Jong Young Cho , Woong Jun Hwang , Ye Hwan Kim
发明人： Jea Gun Park , Un Gyu Paik , Jin Hyung Park , Hee Sub Hwang , Hao Cui , Jong Young Cho , Woong Jun Hwang , Ye Hwan Kim
IPC分类号： H01L21/306 , H01L21/20 , C09K13/00 , C09K13/02
CPC分类号： H01L45/1683 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： Disclosed is a slurry for polishing a phase change material. The slurry includes an abrasive, an alkaline polishing promoter and deionized water. Due to the use of the abrasive and the alkaline polishing promoter, the pH of the slurry is adjusted, the polishing rate of the phase change material is improved, and the polishing selectivity of the phase change material to an underlying insulating layer is increased. Further disclosed is a method for patterning a phase change material using the slurry.
摘要翻译：公开了一种用于抛光相变材料的浆料。浆料包括研磨剂，碱性抛光促进剂和去离子水。由于使用研磨剂和碱性抛光促进剂，调节了浆料的pH，改善了相变材料的研磨速度，相变材料对下层绝缘层的抛光选择性提高。还公开了使用该浆料对相变材料进行图案化的方法。

3. 发明授权

US06485807B1 Silicon wafers having controlled distribution of defects, and methods of preparing the same 有权
标题翻译：具有受控的缺陷分布的硅晶片及其制备方法
公开(公告)号：US06485807B1
公开(公告)日：2002-11-26
申请号：US09702503
申请日：2000-10-31
申请人： Jea-gun Park
发明人： Jea-gun Park
IPC分类号： C30B2906
CPC分类号： C30B15/206 , C30B15/14 , C30B15/203 , C30B29/06 , C30B33/00 , H01L21/3225 , Y10S117/911 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088 , Y10T428/21
摘要： A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere containing nitrogen (N2) and argon (Ar) or N2 and hydrogen (H2), in a donor killing step during a wafering process.
摘要翻译：提供了具有受控的缺陷分布的硅晶片，其中具有从晶片表面向内的足够深度的裸露区域在晶片的主体区域中与高吸杂效应组合。在硅晶片中，作为固有吸气部位的氧析出物显示垂直分布。从晶片的顶表面到底表面的氧沉淀浓度分布包括在晶片的顶表面和底表面的第一和第二预定深度处的第一和第二峰，在晶片的顶表面和底表面之间的裸露区域第一和第二峰，以及在第一和第二峰之间的对应于晶片的体区的凹区。对于这种氧沉淀物浓度分布，在晶片化过程中，在供体杀死步骤中，将晶片暴露于含氮（N 2）和氩（Ar）或N 2和氢（H 2）的气体混合气体中的快速热退火工艺。

4. 发明授权

US06170235B2 Wafer packaging method 有权
标题翻译：晶圆包装方法
公开(公告)号：US06170235B2
公开(公告)日：2001-01-09
申请号：US09206234
申请日：1998-12-07
申请人： Kyoo-chul Cho , Jea-gun Park , Sung-hoon Cho
发明人： Kyoo-chul Cho , Jea-gun Park , Sung-hoon Cho
IPC分类号： B65B5500
CPC分类号： H01L21/67353 , H01L21/67386
摘要： A wafer packaging method in which a wafer is placed into a packaging bag that is sealed before the concentration of sulphuric oxide on the surface of the wafer reaches 3×1012 atoms/cm2. The placing of the wafer in the wafer packaging bag is carried out in a substantially clean environment
摘要翻译：一种晶片封装方法，其中将晶片放置在在晶片表面上的硫酸氧化物的浓度达到3×10 12原子/ cm 2之前密封的包装袋中。在晶片包装袋中放置晶片在基本上清洁的环境中进行

5. 发明授权

US09163314B2 CMP slurry composition for tungsten 有权
标题翻译：钨的CMP浆料组成
公开(公告)号：US09163314B2
公开(公告)日：2015-10-20
申请号：US13643375
申请日：2012-07-06
申请人： Jea-Gun Park , Jin-Hyung Park , Jae-Hyung Lim , Jong-Young Cho , Ho Choi , Hee-Sub Hwang
发明人： Jea-Gun Park , Jin-Hyung Park , Jae-Hyung Lim , Jong-Young Cho , Ho Choi , Hee-Sub Hwang
IPC分类号： C09K3/14 , C09G1/02 , C23F1/30 , C23F3/06
CPC分类号： C23F1/30 , C09G1/02 , C23F3/06
摘要： The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
摘要翻译：本发明涉及一种用于抛光钨的CMP浆料组合物，其包括研磨剂和抛光化学品，其中磨料包含分散在超纯水中的胶体二氧化硅，抛光化学品包括过氧化氢，过硫酸铵和硝酸铁。浆料组合物不变色并且具有良好的蚀刻选择性，从而适用于CMP工艺。

6. 发明申请

US20130032572A1 SLURRY FOR POLISHING PHASE-CHANGE MATERIALS AND METHOD FOR PRODUCING A PHASE-CHANGE DEVICE USING SAME 审中-公开
公开(公告)号：US20130032572A1
公开(公告)日：2013-02-07
申请号：US13577257
申请日：2011-02-01
申请人： Jea Gun Park , Un Gyu Paik , Jin Hyung Park , Hao Cui , Jong Young Cho , Hee Sub Hwang , Jae Hyung Lim , Ye Hwan Kim
发明人： Jea Gun Park , Un Gyu Paik , Jin Hyung Park , Hao Cui , Jong Young Cho , Hee Sub Hwang , Jae Hyung Lim , Ye Hwan Kim
IPC分类号： C09K13/00 , B44C1/22 , C09K13/02
CPC分类号： C09K3/1463
摘要： The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.

7. 发明授权

US08361177B2 Polishing slurry, method of producing same, and method of polishing substrate 有权
标题翻译：抛光浆料，其制造方法以及抛光底物的方法
公开(公告)号：US08361177B2
公开(公告)日：2013-01-29
申请号：US12333170
申请日：2008-12-11
申请人： Dae Hyeong Kim , Seok Min Hong , Jae Hyun Jeon , Un Gyu Park , Jea Gun Park , Yong Kuk Kim
发明人： Dae Hyeong Kim , Seok Min Hong , Jae Hyun Jeon , Un Gyu Park , Jea Gun Park , Yong Kuk Kim
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14 , C09K13/00 , H01L21/302 , C09G1/02
CPC分类号： B82Y30/00 , C01F17/0043 , C01P2004/52 , C01P2004/64 , C01P2006/12 , C01P2006/22 , C09G1/02 , C09K3/1463
摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
摘要翻译：公开了一种抛光浆料，特别是用于化学机械抛光的浆料，其用于化学机械抛光工艺以使半导体层压体变平。更具体地说，本发明提供一种制备浆料的方法，该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中，对用作阻挡膜的氮化物层具有高的去除选择性（设计规则为0.13μm以下），并且减少了在平坦化表面上的划痕的发生，以及使用其抛光基板的方法。

8. 发明申请

US20120073639A1 SOLAR CELL AND A PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：太阳能电池及其生产方法
公开(公告)号：US20120073639A1
公开(公告)日：2012-03-29
申请号：US13257307
申请日：2010-03-18
申请人： Jea Gun Park , Su Hwan Lee , Dal Ho Kim , Tae Hun Shim
发明人： Jea Gun Park , Su Hwan Lee , Dal Ho Kim , Tae Hun Shim
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L27/302 , B82Y10/00 , H01L51/0036 , H01L51/0037 , H01L51/0047 , H01L51/4253
摘要： The present invention provides a solar cell and manufacturing method thereof. The solar cell according to the present invention comprises: first and second electrodes, at least one of which has light transmitting properties; two or more photoelectric conversion layers positioned between the first and second electrodes; and a transflective conductive layer positioned between the photoelectric conversion layers. Further, tunneling layers are also provided between the photoelectric conversion layers and the transflective conductive layer. The efficiency of the solar cell can be improved, as compared with the prior art, by providing tunneling layers and a transflective conductive layer in this way.
摘要翻译：本发明提供一种太阳能电池及其制造方法。根据本发明的太阳能电池包括：第一和第二电极，其中至少一个具有透光性; 位于第一和第二电极之间的两个或更多个光电转换层; 以及位于光电转换层之间的透反射导电层。此外，在光电转换层和透反射导电层之间还设置隧道层。与现有技术相比，通过以这种方式提供隧道层和透反射导电层，可以提高太阳能电池的效率。

9. 发明授权

US08062547B2 CMP slurry, preparation method thereof and method of polishing substrate using the same 有权
标题翻译： CMP浆料，其制备方法和使用其的抛光基材的方法
公开(公告)号：US08062547B2
公开(公告)日：2011-11-22
申请号：US11421965
申请日：2006-06-02
申请人： Un Gyu Paik , Jea Gun Park , Sang Kyun Kim , Ye Hwan Kim , Myoung Won Suh , Dae Hyeong Kim
发明人： Un Gyu Paik , Jea Gun Park , Sang Kyun Kim , Ye Hwan Kim , Myoung Won Suh , Dae Hyeong Kim
IPC分类号： C09K13/00
CPC分类号： C23F3/04 , C09G1/02 , C09K3/1463 , C09K3/1472 , H01L21/3212
摘要： A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.
摘要翻译：提供包括抛光颗粒的CMP浆料，抛光颗粒包含有机改性的胶体二氧化硅。另外，提供了制备CMP浆料的方法，包括以下步骤：制备包含有机改性二氧化硅的抛光颗粒; 将抛光颗粒转化成水状态; 并向抛光颗粒中加入纯水，亲水性添加剂和分散剂。抛光颗粒可以使用溶胶 - 凝胶法合成。根据本发明，可以制备具有优异抛光性能的浆料，其中改变胶体二氧化硅的表面性能以控制抛光颗粒的物理性质，并且可以确保所需的CMP去除速率同时最小化划痕的发生。

10. 发明申请

US20110127580A1 CAPACITOR-LESS MEMORY DEVICE 有权
标题翻译：无电容器存储器件
公开(公告)号：US20110127580A1
公开(公告)日：2011-06-02
申请号：US12990353
申请日：2009-04-30
申请人： Jea-Gun Park , Tae-Hun Shim , Gon-Sub Lee , Seong-Je Kim , Tae-Hyun Kim
发明人： Jea-Gun Park , Tae-Hun Shim , Gon-Sub Lee , Seong-Je Kim , Tae-Hyun Kim
IPC分类号： H01L29/772
CPC分类号： H01L29/4234 , G11C11/404 , G11C16/0466 , G11C2211/4016 , H01L27/10802 , H01L29/7841 , H01L29/78687 , H01L29/78696
摘要： Provided is a capacitorless memory device. The device includes a semiconductor substrate, an insulating layer disposed on the semiconductor substrate, a storage region disposed on a partial region of the insulating layer, a channel region disposed on the storage region to provide a valence band energy offset between the channel region and the storage region, a gate insulating layer and a gate electrode sequentially disposed on the channel region, and source and drain regions connected to the channel region and disposed at both sides of the gate electrode. A storage region having different valence band energy from a channel region is disposed under the channel region unit so that charges trapped in the storage region unit cannot be easily drained. Thus, a charge retention time may be increased to improve data storage capability.
摘要翻译：提供了一种无电容器存储器件。所述器件包括半导体衬底，设置在所述半导体衬底上的绝缘层，设置在所述绝缘层的部分区域上的存储区域，设置在所述存储区域上以在所述沟道区域和所述沟道区域之间提供价带能量偏移的沟道区域顺序地设置在沟道区上的栅极绝缘层和栅电极以及连接到沟道区并设置在栅电极两侧的源极和漏极区。在通道区域单元的下方配置具有与通道区域不同的价带能量的存储区域，使得捕获在存储区域单元中的电荷不容易排出。因此，可以增加电荷保留时间以提高数据存储能力。

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