专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07828897B2 Crystal pulling apparatus and method for the production of heavy crystals 有权
标题翻译：水晶拉制装置及重晶体生产方法
公开(公告)号：US07828897B2
公开(公告)日：2010-11-09
申请号：US11881023
申请日：2007-07-25
申请人： Burkhard Altekrüger , Stefan Henkel , Axel Vonhoff , Erich Tomzig , Dieter Knerer
发明人： Burkhard Altekrüger , Stefan Henkel , Axel Vonhoff , Erich Tomzig , Dieter Knerer
IPC分类号： C30B15/02
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.
摘要翻译：拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。这些位置中的每一个由基体上的止挡限定。当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。

2. 发明授权

US07501022B2 Methods of fabricating silicon carbide crystals 有权
标题翻译：制造碳化硅晶体的方法
公开(公告)号：US07501022B2
公开(公告)日：2009-03-10
申请号：US11542987
申请日：2006-10-04
申请人： Stephan Mueller
发明人： Stephan Mueller
IPC分类号： C30B28/12
CPC分类号： C30B23/00 , C30B23/025 , C30B29/36 , Y10S117/911
摘要： Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.
摘要翻译：提供了用于生产碳化硅晶体和碳化硅晶体的碳化硅晶体，晶种保持器和晶种的制造方法。通过将碳化硅晶种的成核位置强制为预定图案并利用物理气相传输（PVT）生长碳化硅以便提供对应于预定图案的碳化硅的选择性优先生长来制造碳化硅晶体。为这种方法提供种子保持器和晶种。还提供了具有更高和更低缺陷密度区域的碳化硅晶体。

3. 发明申请

US20080311021A1 Apparatus for pulling single crystal by CZ method 审中-公开
公开(公告)号：US20080311021A1
公开(公告)日：2008-12-18
申请号：US11981477
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20 , C01B33/02
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

4. 发明申请

US20080190358A1 Seed crystal holder for growing single crystal from melt 有权
标题翻译：用于从熔体生长单晶的籽晶架
公开(公告)号：US20080190358A1
公开(公告)日：2008-08-14
申请号：US11705648
申请日：2007-02-13
申请人： Olexy V. Radkevich , Volodimir Protsenko
发明人： Olexy V. Radkevich , Volodimir Protsenko
IPC分类号： C30B35/00 , B23P11/00
CPC分类号： C30B15/32 , Y10S117/911 , Y10T29/49947 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1072 , Y10T117/1088
摘要： A seed crystal holder for growing single crystals, such as for use in scintillation detectors for nuclear medicine. The holder includes a cooling shaft, a fastener attached to the cooling shaft, and a gasket for separating the cooling shaft from the seed crystal. The gasket is made of a heat-transferable material such as steel wool or metallic foil to conduct heat from the seed crystal to the cooling shaft, while also providing a cushioning effect to cushion the seed crystal against potentially damaging motion forces.
摘要翻译：用于生长单晶的晶体保持器，例如用于核医学的闪烁检测器。保持器包括冷却轴，附接到冷却轴的紧固件和用于将冷却轴与晶种分离的垫圈。垫圈由诸如钢丝绒或金属箔的可热转移的材料制成，以将来自晶种的热量传导到冷却轴，同时还提供缓冲效应以缓冲晶种以防潜在的有害的运动力。

5. 发明申请

US20080163815A1 DEVICE FOR PRODUCING THE GROWTH OF A SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：用于生产半导体材料生长的装置
公开(公告)号：US20080163815A1
公开(公告)日：2008-07-10
申请号：US11972111
申请日：2008-01-10
申请人： Sylvain Paltrier
发明人： Sylvain Paltrier
IPC分类号： C30B11/00
CPC分类号： C30B11/003 , C30B11/00 , C30B11/002 , C30B11/14 , C30B15/22 , C30B29/10 , C30B29/48 , H01L21/02376 , H01L21/02428 , H01L21/02562 , H01L21/02625 , H01L21/02645 , Y10S117/911 , Y10T117/1024
摘要： This device for producing the growth of a semiconductor material, in particular of type II-VI, uses a melt of the said semiconductor placed in a sealed bulb under vacuum or under controlled atmosphere, the said bulb being subjected to a sufficient temperature gradient for first maintaining the melt in the liquid state, then causing its progressive crystallization from the surface towards the bottom.The said device further comprises an element (3) capable of floating on the surface of the said melt, and equipped with a substantially central bore (4), intended on the one hand for receiving a seed crystal (5) or for permitting the nucleation leading to the preparation of a seed crystal (5′), and also of supporting the said seed crystal (5, 5′) above the melt while maintaining it in contact with the said melt in order to permit the continued crystallization from the said seed crystal (5, 5′) by lowering the temperature gradient.
摘要翻译：用于产生半导体材料，特别是II-VI型的生长的该器件使用在真空或受控气氛下将密封的灯泡放置在密封灯泡中的熔体，所述灯泡经受足够的温度梯度将熔体保持在液态，然后使其从表面向底部逐渐结晶。所述装置还包括能够漂浮在所述熔体的表面上并且装备有基本中心孔（4）的元件（3），一方面用于接收晶种（5）或用于允许成核导致制备晶种（5'），并且还使熔体上方的所述晶种（5,5'）支撑，同时保持其与所述熔体接触，以便允许从所述种子继续结晶通过降低温度梯度来测量晶体（5,5'）。

6. 发明授权

US07232489B2 Crucible or related object holder and method of manufacture 有权
标题翻译：坩埚或相关物体夹持器和制造方法
公开(公告)号：US07232489B2
公开(公告)日：2007-06-19
申请号：US11180162
申请日：2005-07-13
申请人： Olivia Webb
发明人： Olivia Webb
IPC分类号： C30B35/00
CPC分类号： B01L9/50 , B01L3/04 , B25B9/00 , B25B9/02 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： An apparatus for holding a crucible or other item is provided. The apparatus includes a first support member having a straight portion with two ends. A second support member having a shaped portion is connected to one of the ends of the first support member, wherein the shape of the shaped portion accommodates the crucible or other item. A support material covers the second support member, wherein the support material increases the coefficient of friction between the crucible or other item and the second support member. A spring is coupled to the other end of the first support member, and a third support member is coupled to the spring and configured so as to apply a force to the crucible or other item when the crucible or other item is placed in the shaped portion of the second support member. The third support member can be moved by exerting a force opposite to that applied by the spring so as to allow the crucible or other item to be placed in the shaped portion of the second support member, and when the exerted force is removed, the third support member is placed in contact with the crucible or other item by the spring force, such as to hold the crucible without exceeding the amount of force that would break the crucible or other item.
摘要翻译：提供了一种用于保持坩埚或其它物品的装置。该装置包括具有两端的直线部分的第一支撑构件。具有成形部分的第二支撑构件连接到第一支撑构件的一个端部，其中成形部分的形状容纳坩埚或其它物品。支撑材料覆盖第二支撑构件，其中支撑材料增加了坩埚或其它物品与第二支撑构件之间的摩擦系数。弹簧联接到第一支撑构件的另一端，并且第三支撑构件联接到弹簧并且构造成当坩埚或其它物品放置在成形部分中时向坩埚或其它物品施加力的第二支撑构件。可以通过施加与弹簧施加的力相反的力来移动第三支撑构件，以便允许坩埚或其它物品放置在第二支撑构件的成形部分中，并且当施加的力被移除时，第三支撑构件支撑构件通过弹簧力与坩埚或其他物体接触，例如保持坩埚而不超过破坏坩埚或其它物品的力的量。

7. 发明申请

US20060228565A1 Polycrystalline silicon rod and method for processing the same 有权
标题翻译：多晶硅棒及其加工方法
公开(公告)号：US20060228565A1
公开(公告)日：2006-10-12
申请号：US11414342
申请日：2006-05-01
申请人： Mamoru Nakano , Yukio Yamaguchi , Teruhisa Kitagawa , Rikito Sato , Naoki Hatakeyama
发明人： Mamoru Nakano , Yukio Yamaguchi , Teruhisa Kitagawa , Rikito Sato , Naoki Hatakeyama
IPC分类号： B32B17/06
CPC分类号： C30B29/06 , C30B13/00 , C30B15/02 , Y10S117/90 , Y10S117/911 , Y10T117/1032 , Y10T117/1072 , Y10T428/2973
摘要： A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.
摘要翻译：根据本发明的多晶硅棒具有将多晶硅棒彼此端对端悬挂的结构，从而可以显着提高熔融多晶硅的效率。通过完全或部分地从棒上除去离开中心部分并且处理中心部分，优选周边部分而获得的多晶硅棒通过研磨去除，其量相当于直径的10至60％杆，然后进行槽形成处理。这使得退火不必要。

8. 发明授权

US06977010B2 Apparatus for pulling single crystal by CZ method 有权
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US06977010B2
公开(公告)日：2005-12-20
申请号：US10337456
申请日：2003-01-07
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , C30B15/14 , C30B15/30 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B35/00
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

9. 发明申请

US20050268840A1 Apparatus for pulling single crystal by CZ method 有权
公开(公告)号：US20050268840A1
公开(公告)日：2005-12-08
申请号：US11146541
申请日：2005-06-07
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/00 , C30B15/14 , C30B15/30 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

10. 发明授权

US06780238B2 Argon/ammonia rapid thermal annealing for silicon wafers 有权
标题翻译：氩/氨快速热退火硅片
公开(公告)号：US06780238B2
公开(公告)日：2004-08-24
申请号：US10235023
申请日：2002-09-04
申请人： Jea-gun Park
发明人： Jea-gun Park
IPC分类号： C30B2502
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10S117/911 , Y10T117/1004 , Y10T117/1008 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088 , Y10T428/12458 , Y10T428/12528 , Y10T428/21
摘要： A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere comprising ammonia (NH3) and argon (Ar) at temperatures below about 1200° C. Using such a rapid thermal annealing process, slip dislocation can be reduced in the device regions of the wafer, and silicon dioxide sublimation on the rapid thermal annealing chamber also can be reduced.
摘要翻译：提供了具有受控的缺陷分布的硅晶片，其中具有从晶片表面向内的足够深度的裸露区域在晶片的主体区域中与高吸杂效应组合。在硅晶片中，作为固有吸气部位的氧析出物显示垂直分布。从晶片的顶表面到底表面的氧沉淀浓度分布包括在晶片的顶表面和底表面的第一和第二预定深度处的第一和第二峰，在晶片的顶表面和底表面之间的裸露区域第一和第二峰，以及在第一和第二峰之间的对应于晶片的体区的凹区。对于这样的氧沉淀浓度分布，在低于约1200℃的温度下，在包含氨（NH 3）和氩（Ar）的气体混合气体中将晶片暴露于快速热退火工艺。使用这种快速热退火工艺，滑动可以在晶片的器件区域中减少位错，并且可以减少快速热退火室上的二氧化硅升华。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式