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1. 发明授权

US08472265B2 Repairing circuit for memory circuit and method thereof and memory circuit using the same 有权
标题翻译：用于存储器电路的修复电路及其方法和使用其的存储器电路
公开(公告)号：US08472265B2
公开(公告)日：2013-06-25
申请号：US13104038
申请日：2011-05-10
申请人： Jen-Shou Hsu
发明人： Jen-Shou Hsu
IPC分类号： G11C7/06 , G11C29/00 , G11C17/18 , G11C8/00
CPC分类号： G11C29/34 , G11C11/401 , G11C29/44 , G11C29/808
摘要： A novelty repairing method and circuit are provided by the embodiments of the present invention, wherein the input/output (IO) compression manner can be used therein to reduce the access time during the chip probing 1 (CP1) test, and each redundant column selected line (RCSL) can be divided into several partial redundant column selected lines (P-RCSLs) which are respectively responsible for repairing the defects of the corresponding regions. Based upon the repairing method, the memory circuit can reduce the number of the RCSLs. Furthermore, a variable region dividing manner is applied therein, so as to increase the probability for repairing the defect of the memory circuit.
摘要翻译：通过本发明的实施例提供了一种新颖的修复方法和电路，其中可以使用输入/输出（IO）压缩方式来减少芯片探测1（CP1）测试期间的访问时间，并且选择每个冗余列线（RCSL）可以分为几个部分冗余列选择线（P-RCSL），分别负责修复相应区域的缺陷。基于修复方法，存储电路可以减少RCSL的数量。此外，应用可变区域分割方式，以增加修复存储电路的缺陷的可能性。

2. 发明授权

US07796448B2 Trigger circuit of a column redundant circuit and related column redundant device 有权
标题翻译：列冗余电路和相关列冗余设备的触发电路
公开(公告)号：US07796448B2
公开(公告)日：2010-09-14
申请号：US12257408
申请日：2008-10-24
申请人： Jen-Shou Hsu
发明人： Jen-Shou Hsu
IPC分类号： G11C16/04
CPC分类号： G11C29/808
摘要： A trigger circuit for triggering corresponding memory cells of a column redundant circuit includes a determining circuit for generating a determining signal according to an accessed row address, and a plurality of comparing circuits jointly electrically connected to the column redundant circuit for receiving the determining signal, each of the comparing circuits selectively generating a trigger signal to the column redundant circuit according to the determining signal and an accessed column address.
摘要翻译：用于触发列冗余电路的相应存储单元的触发电路包括：一个确定电路，用于根据访问的行地址产生一个确定信号;以及多个比较电路，它们共同电连接到列冗余电路，用于接收该确定信号，每个所述比较电路根据所述确定信号和所访问的列地址向所述列冗余电路选择性地产生触发信号。

3. 发明申请

US20090268530A1 Trigger Circuit of a Column Redundant Circuit and Related Column Redundant Device 有权
标题翻译：柱冗余电路和相关列冗余装置的触发电路
公开(公告)号：US20090268530A1
公开(公告)日：2009-10-29
申请号：US12257408
申请日：2008-10-24
申请人： Jen-Shou Hsu
发明人： Jen-Shou Hsu
IPC分类号： G11C7/00 , G11C29/00 , G11C17/16
CPC分类号： G11C29/808
摘要： A trigger circuit for triggering corresponding memory cells of a column redundant circuit includes a determining circuit for generating a determining signal according to an accessed row address, and a plurality of comparing circuits jointly electrically connected to the column redundant circuit for receiving the determining signal, each of the comparing circuits selectively generating a trigger signal to the column redundant circuit according to the determining signal and an accessed column address.
摘要翻译：用于触发列冗余电路的相应存储单元的触发电路包括：一个确定电路，用于根据访问的行地址产生一个确定信号;以及多个比较电路，它们共同电连接到列冗余电路，用于接收该确定信号，每个所述比较电路根据所述确定信号和所访问的列地址向所述列冗余电路选择性地产生触发信号。

4. 发明申请

US20080142924A1 Decoupling capacitor circuit 有权
标题翻译：去耦电容电路
公开(公告)号：US20080142924A1
公开(公告)日：2008-06-19
申请号：US11797057
申请日：2007-04-30
申请人： Jen Shou Hsu , Ming Hung Wang
发明人： Jen Shou Hsu , Ming Hung Wang
IPC分类号： H01L27/02
CPC分类号： H01L27/0805 , H01L21/761 , H01L27/0921 , H01L27/10894 , H01L27/10897
摘要： The invention discloses a decoupling capacitor circuit, comprising a plurality of coupled deep trench capacitors connected in series and a plurality of push-pull circuits. The decoupling capacitor circuit controls the voltage across each deep trench capacitor via the push-pull circuit so that it will not be influenced by the defect (leakage current) of the deep trench capacitor or the bias voltage of the parasitic devices.
摘要翻译：本发明公开了一种去耦电容电路，包括串联连接的多个耦合的深沟槽电容器和多个推挽电路。去耦电容电路通过推挽电路控制每个深沟槽电容器两端的电压，使其不受深沟槽电容器的缺陷（漏电流）或寄生器件的偏置电压的影响。

5. 发明授权

US07277315B2 Multiple power supplies for the driving circuit of local word line driver of DRAM 有权
标题翻译：用于DRAM的本地字线驱动器的驱动电路的多个电源
公开(公告)号：US07277315B2
公开(公告)日：2007-10-02
申请号：US11304416
申请日：2005-12-14
申请人： Der-Min Yuan , Jen Shou Hsu , Yao Yi Liu
发明人： Der-Min Yuan , Jen Shou Hsu , Yao Yi Liu
IPC分类号： G11C11/24
CPC分类号： G11C8/08 , G11C5/145 , G11C11/4074 , G11C11/4085
摘要： Methods and circuits to reduce power consumption of DRAM local word-line drivers are disclosed. A first voltage converter provides a voltage VPP1, which is lower than the voltage VPP required to operate a word-line of a DRAM cell array. A voltage detector monitors the voltage level of the local word-line driver. Once the voltage level VPP1 is reached on the local word-linedriver switching means as e.g. tri-state drivers put the final VPP voltage on the word line. This VPP voltage is the output of a second voltage boost converter. Putting the voltage in two stages on the word-line reduces the overall power consumption. The voltage level VPP1 has to be carefully selected to find a compromised solution between current consumption and performance.
摘要翻译：公开了减少DRAM本地字线驱动器功耗的方法和电路。第一电压转换器提供低于操作DRAM单元阵列的字线所需的电压VPP的电压VPP 1。电压检测器监视本地字线驱动器的电压电平。一旦在本地的字形内部驱动器切换装置上达到电压电平VPP 1，例如，三态驱动器将最终的VPP电压放在字线上。该VPP电压是第二升压转换器的输出。在字线上分两级进行电压降低了整体功耗。必须仔细选择电压电平VPP 1以在电流消耗和性能之间找到一个受损的解决方案。

6. 发明申请

US20070140308A1 Calibrated built-in temperature sensor and calibration method thereof 有权
标题翻译：校准的内置温度传感器及其校准方法
公开(公告)号：US20070140308A1
公开(公告)日：2007-06-21
申请号：US11304881
申请日：2005-12-16
申请人： Jen-Shou Hsu , Bor-Doou Rong
发明人： Jen-Shou Hsu , Bor-Doou Rong
IPC分类号： G01K15/00
CPC分类号： G01K15/00 , G01K7/01
摘要： A built-in calibration device is for a temperature sensor. A voltage divider is configured for receiving one reference voltage with a negative temperature coefficient and generating a plurality of input voltages. Comparing apparatus is connected to the voltage divider and configured for generating a plurality of comparing codes based upon another reference voltage with a positive temperature coefficient and the plurality of input voltages. Controlling apparatus is connected to the comparing apparatus and configured for calibrating the temperature sensor based on the plurality of comparing codes.
摘要翻译：内置校准装置用于温度传感器。分压器被配置为接收具有负温度系数的一个参考电压并产生多个输入电压。比较装置连接到分压器，并被配置为基于具有正温度系数和多个输入电压的另一个参考电压产生多个比较代码。控制装置连接到比较装置并且被配置为基于多个比较代码校准温度传感器。

7. 发明申请

US20120287737A1 REPAIRING CIRCUIT FOR MEMORY CIRCUIT AND METHOD THEREOF AND MEMORY CIRCUIT USING THE SAME 有权
标题翻译：用于存储器电路的修复电路及其使用方法和存储器电路
公开(公告)号：US20120287737A1
公开(公告)日：2012-11-15
申请号：US13104038
申请日：2011-05-10
申请人： Jen-Shou Hsu
发明人： Jen-Shou Hsu
IPC分类号： G11C29/04
CPC分类号： G11C29/34 , G11C11/401 , G11C29/44 , G11C29/808
摘要： A novelty repairing method and circuit are provided by the embodiments of the present invention, wherein the input/output (IO) compression manner can be used therein to reduce the access time during the chip probing 1 (CP1) test, and each redundant column selected line (RCSL) can be divided into several partial redundant column selected lines (P-RCSLs) which are respectively responsible for repairing the defects of the corresponding regions. Based upon the repairing method, the memory circuit can reduce the number of the RCSLs. Furthermore, a variable region dividing manner is applied therein, so as to increase the probability for repairing the defect of the memory circuit.
摘要翻译：通过本发明的实施例提供了一种新颖的修复方法和电路，其中可以使用输入/输出（IO）压缩方式来减少芯片探测1（CP1）测试期间的访问时间，并且选择每个冗余列线（RCSL）可以分为几个部分冗余列选择线（P-RCSL），分别负责修复相应区域的缺陷。基于修复方法，存储电路可以减少RCSL的数量。此外，应用可变区域分割方式，以增加修复存储电路的缺陷的可能性。

8. 发明授权

US08289795B1 Semiconductor memory device and method of testing the same 有权
标题翻译：半导体存储器件及其测试方法
公开(公告)号：US08289795B1
公开(公告)日：2012-10-16
申请号：US13270196
申请日：2011-10-10
申请人： Jen-Shou Hsu
发明人： Jen-Shou Hsu
IPC分类号： G11C7/00
CPC分类号： G11C29/08 , G11C29/34 , G11C2029/1202 , G11C2029/2602
摘要： A semiconductor memory device and a method of testing the same are provided. In the method, the semiconductor memory device enters a test mode after receiving a mode selection signal. After the semiconductor memory device enters the test mode, a first word line is activated. Test data are then sequentially written into a plurality of memory cells coupled to the first word line. The first word line is deactivated, and data between each pair of bit lines are latched. A second word line is activated. After the second word line is activated, the data latched between each pair of bit lines are directly written into the memory cells coupled to the second word line.
摘要翻译：提供半导体存储器件及其测试方法。在该方法中，半导体存储器件在接收到模式选择信号之后进入测试模式。在半导体存储器件进入测试模式之后，第一字线被激活。然后将测试数据顺序写入耦合到第一字线的多个存储单元。第一个字线被禁用，并且每对位线之间的数据被锁存。第二个字线被激活。在第二字线被激活之后，锁存在每对位线之间的数据被直接写入耦合到第二字线的存储单元中。

9. 发明授权

US07623388B2 Method for detecting erroneous word lines of a memory array and device thereof 有权
公开(公告)号：US07623388B2
公开(公告)日：2009-11-24
申请号：US12116197
申请日：2008-05-06
申请人： Tzu-Hao Chen , Jen-Shou Hsu , Lien-Sheng Yang , Yin-Ming Lan
发明人： Tzu-Hao Chen , Jen-Shou Hsu , Lien-Sheng Yang , Yin-Ming Lan
IPC分类号： G11C11/34
CPC分类号： G11C11/408 , G11C11/401 , G11C29/02 , G11C29/025 , G11C2029/1202
摘要： A method detects if a word line of a memory array is broken. The method includes writing a first datum to a memory cell when coupling a corresponding word line to a voltage source, writing a second datum different from the first datum to the memory cell when the coupling between the corresponding word line and the voltage source is decoupled, reading the stored data of the memory cell, and determining if the word line is broken according to the read data, the first datum, and the second datum.

10. 发明授权

US07570104B2 Charge pump circuit control system 有权
标题翻译：电荷泵电路控制系统
公开(公告)号：US07570104B2
公开(公告)日：2009-08-04
申请号：US11797047
申请日：2007-04-30
申请人： Jen Shou Hsu
发明人： Jen Shou Hsu
IPC分类号： G05F1/10
CPC分类号： H03K3/0315 , G11C5/145 , H02M3/07
摘要： The invention discloses a charge pump circuit control system comprising a level detector, a ring oscillator, and a charge pump circuit. The level detector detects the variation of the output voltage of the charge pump circuit for generating a control signal. The ring oscillator generates a plurality of clock signals according to the control signal, and the charge pump circuit generates the output voltage according to the plurality of clock signals.
摘要翻译：本发明公开了一种电荷泵电路控制系统，包括电平检测器，环形振荡器和电荷泵电路。电平检测器检测用于产生控制信号的电荷泵电路的输出电压的变化。环形振荡器根据控制信号产生多个时钟信号，并且电荷泵电路根据多个时钟信号产生输出电压。

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