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1. 发明申请

US20220223880A1 SOLID OXIDE FUEL CELLS WITH CATHODE FUNCTIONAL LAYERS 有权
公开(公告)号：US20220223880A1
公开(公告)日：2022-07-14
申请号：US17516851
申请日：2021-11-02
申请人： Ke-Ji PAN , Mohammed Hussain ABDUL JABBAR , Dong DING , Eric WACHSMAN
发明人： Ke-Ji PAN , Mohammed Hussain ABDUL JABBAR , Dong DING , Eric WACHSMAN
IPC分类号： H01M4/86 , H01M8/1213 , H01M4/90 , H01M8/1253 , H01M8/126 , H01M8/1246
摘要： In various embodiments, a solid oxide fuel cell features a functional layer for reducing interfacial resistance between the cathode and the solid electrolyte.

2. 发明授权

US10741105B2 Wireless image processing system 有权
公开(公告)号：US10741105B2
公开(公告)日：2020-08-11
申请号：US16231585
申请日：2018-12-23
申请人： Ji Pan , Huang Ming
发明人： Ji Pan , Huang Ming
IPC分类号： G09F9/302 , G09G3/32 , H04N7/14 , G06F3/14
摘要： A wireless image processing system includes a splitter software and processing apparatus configured to receive or forward picture element data. Image data in a computer may be split, wirelessly transmitted, and processed to form an any size integrity image/video display on a building or structure, meanwhile no physical damage may be done on or to the building or no physical cabling obstacle for image or video dividing and combining at a lighting show.

3. 发明授权

US10161607B2 Suction lighting system and method 有权
公开(公告)号：US10161607B2
公开(公告)日：2018-12-25
申请号：US15590285
申请日：2017-05-09
申请人： Ji Pan , Huang Ming
发明人： Ji Pan , Huang Ming
IPC分类号： F21V21/092 , F21V21/08 , G09F13/22 , F21W121/00 , F21Y115/10
摘要： A suction lighting system may provide a plurality of suction cups that may attach to a surface and display an advertisement or a decorative facade. The suction lighting system may provide at least one suction cup that may be provided to attach to the surface and may emit light from one or more LEDs. The method may provide steps for advertising on or decorating a structure utilizing a set of suction light devices. The method may include searching for available advertising space and displaying the advertisement within the space.

4. 发明授权

US09059147B1 Junction barrier schottky (JBS) with floating islands 有权
标题翻译：交界面肖特基（JBS）与浮岛
公开(公告)号：US09059147B1
公开(公告)日：2015-06-16
申请号：US14222614
申请日：2014-03-22
申请人： Ji Pan , Anup Bhalla
发明人： Ji Pan , Anup Bhalla
IPC分类号： H01L29/47 , H01L29/872 , H01L29/78
CPC分类号： H01L29/47 , H01L29/0619 , H01L29/0623 , H01L29/0649 , H01L29/66143 , H01L29/7811 , H01L29/872
摘要： A Schottky diode includes a Schottky barrier and a plurality of dopant regions disposed near the Schottky barrier as floating islands to function as PN junctions for preventing a leakage current generated from a reverse voltage. At least a trench opened in a semiconductor substrate with a Schottky barrier material disposed therein constitutes the Schottky barrier. The Schottky barrier material may also be disposed on sidewalls of the trench for constituting the Schottky barrier. The trench may be filled with the Schottky barrier material composed of Ti/TiN or a tungsten metal disposed therein for constituting the Schottky barrier. The trench is opened in a N-type semiconductor substrate and the dopant regions includes P-doped regions disposed under the trench constitute the floating islands. The P-doped floating islands may be formed as vertical arrays under the bottom of the trench.
摘要翻译：肖特基二极管包括肖特基势垒和设置在肖特基势垒附近的多个掺杂剂区域，作为浮岛，用作用于防止从反向电压产生的漏电流的PN结。在其中设置有肖特基势垒材料的半导体衬底中开放的至少一个沟槽构成肖特基势垒。肖特基势垒材料也可以设置在用于构成肖特基势垒的沟槽的侧壁上。沟槽可以填充由设置在其中的用于构成肖特基势垒的Ti / TiN或其中的钨金属组成的肖特基势垒材料。沟槽在N型半导体衬底中打开，并且掺杂区包括设置在沟槽下方的P掺杂区构成浮岛。 P掺杂的浮岛可以在沟槽底部形成为垂直阵列。

5. 发明授权

US08450794B2 MOS device with varying contact trench lengths 有权
标题翻译：具有不同接触沟槽长度的MOS器件
公开(公告)号：US08450794B2
公开(公告)日：2013-05-28
申请号：US13316365
申请日：2011-12-09
申请人： Anup Bhalla , Xiaobin Wang , Ji Pan , Sung-Po Wei
发明人： Anup Bhalla , Xiaobin Wang , Ji Pan , Sung-Po Wei
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66484 , H01L21/26586 , H01L29/0623 , H01L29/1095 , H01L29/165 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device is formed on a semiconductor substrate. The device comprises a drain; an epitaxial layer overlaying the drain; a body disposed in the epitaxial layer, having a body top surface and a body bottom surface; a source embedded in the body, extending from the body top surface into the body; a first gate trench extending into the epitaxial layer; a first gate disposed in the first gate trench; an active region contact trench extending through the source and at least part of the body into the drain; an active region contact electrode disposed within the active region contact trench; a second gate trench extending into the epitaxial layer; a second gate disposed in the gate trench; a gate contact trench formed within the second gate; and a gate contact electrode disposed within the gate contact trench.
摘要翻译：半导体器件形成在半导体衬底上。该装置包括排水管; 覆盖漏极的外延层; 设置在外延层中的主体，具有主体顶表面和主体底表面; 嵌入在体内的源体，从身体顶面延伸到体内; 延伸到所述外延层中的第一栅极沟槽; 设置在所述第一栅极沟槽中的第一栅极; 有源区域接触沟槽，其延伸穿过源极和至少部分本体进入漏极; 有源区接触电极，设置在有源区接触沟槽内; 延伸到所述外延层中的第二栅极沟槽; 设置在所述栅极沟槽中的第二栅极; 形成在第二栅极内的栅极接触沟槽; 以及设置在所述栅极接触沟槽内的栅极接触电极。

6. 发明申请

US20110042727A1 MOSFET device with reduced breakdown voltage 有权
标题翻译： MOSFET器件具有降低的击穿电压
公开(公告)号：US20110042727A1
公开(公告)日：2011-02-24
申请号：US12317629
申请日：2008-12-23
申请人： Ji Pan , Anup Bhalla
发明人： Ji Pan , Anup Bhalla
IPC分类号： H01L29/47 , H01L21/28
CPC分类号： H01L29/7813 , H01L21/26513 , H01L21/26586 , H01L21/30604 , H01L29/0865 , H01L29/0878 , H01L29/1037 , H01L29/1095 , H01L29/41766 , H01L29/4236 , H01L29/47 , H01L29/66128 , H01L29/66143 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/8611 , H01L29/872 , H01L29/8725
摘要： A semiconductor device includes a drain, an epitaxial layer overlaying the drain, and an active region. The active region includes a body disposed in the epitaxial layer, a source embedded in the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, a contact trench extending through the source and at least part of the body, a contact electrode disposed in the contact trench, and an epitaxial enhancement portion disposed below the contact trench, wherein the epitaxial enhancement portion has the same carrier type as the epitaxial layer.
摘要翻译：半导体器件包括漏极，覆盖漏极的外延层和有源区。有源区域包括设置在外延层中的主体，嵌入在主体中的源极，延伸到外延层中的栅极沟槽，设置在栅极沟槽中的栅极，延伸穿过源极和至少部分主体的接触沟槽设置在所述接触沟槽中的接触电极和设置在所述接触沟槽下方的外延增强部分，其中所述外延增强部分具有与所述外延层相同的载体类型。

7. 发明申请

US20070075392A1 Junction barrier schottky (JBS) with floating islands 有权
标题翻译：交界面肖特基（JBS）与浮岛
公开(公告)号：US20070075392A1
公开(公告)日：2007-04-05
申请号：US11607583
申请日：2006-12-01
申请人： Ji Pan , Anup Bhalla
发明人： Ji Pan , Anup Bhalla
IPC分类号： H01L29/47
CPC分类号： H01L29/66727 , H01L29/0623 , H01L29/1095 , H01L29/407 , H01L29/66734 , H01L29/7811 , H01L29/782
摘要： A Schottky diode includes a Schottky barrier and a plurality of dopant regions disposed near the Schottky barrier as floating islands to function as PN junctions for preventing a leakage current generated from a reverse voltage. At least a trench opened in a semiconductor substrate with a Schottky barrier material disposed therein constitutes the Schottky barrier. The Schottky barrier material may also be disposed on sidewalls of the trench for constituting the Schottky barrier. The trench may be filled with the Schottky barrier material composed of Ti/TiN or a tungsten metal disposed therein for constituting the Schottky barrier. The trench is opened in a N-type semiconductor substrate and the dopant regions includes P-doped regions disposed under the trench constitute the floating islands. The P-doped floating islands may be formed as vertical arrays under the bottom of the trench.
摘要翻译：肖特基二极管包括肖特基势垒和设置在肖特基势垒附近的多个掺杂区，作为浮岛，用作用于防止从反向电压产生的漏电流的PN结。在其中设置有肖特基势垒材料的半导体衬底中开放的至少一个沟槽构成肖特基势垒。肖特基势垒材料也可以设置在用于构成肖特基势垒的沟槽的侧壁上。沟槽可以填充由设置在其中的用于构成肖特基势垒的Ti / TiN或其中的钨金属组成的肖特基势垒材料。沟槽在N型半导体衬底中打开，并且掺杂区包括设置在沟槽下方的P掺杂区构成浮岛。 P掺杂的浮岛可以在沟槽底部形成为垂直阵列。

8. 发明申请

US20210344018A1 METHODS OF FABRICATING SOLID OXIDE FUEL CELLS 有权
公开(公告)号：US20210344018A1
公开(公告)日：2021-11-04
申请号：US17327910
申请日：2021-05-24
申请人： Ke-Ji PAN , Mohammed Hussain ABDUL JABBAR , Dong DING , Eric WACHSMAN
发明人： Ke-Ji PAN , Mohammed Hussain ABDUL JABBAR , Dong DING , Eric WACHSMAN
IPC分类号： H01M4/86 , H01M8/1213 , H01M4/90 , H01M8/1253 , H01M8/126 , H01M8/1246
摘要： In various embodiments, a solid oxide fuel cell is fabricated in part by disposing a functional layer between the cathode and the solid electrolyte.

9. 发明申请

US20200099060A1 SOLID OXIDE FUEL CELLS WITH CATHODE FUNCTIONAL LAYERS 审中-公开
公开(公告)号：US20200099060A1
公开(公告)日：2020-03-26
申请号：US16572938
申请日：2019-09-17
申请人： Ke-Ji PAN , Mohammed Hussain ABDUL JABBAR , Dong DING , Eric WACHSMAN
发明人： Ke-Ji PAN , Mohammed Hussain ABDUL JABBAR , Dong DING , Eric WACHSMAN
IPC分类号： H01M4/86 , H01M8/1213 , H01M4/90 , H01M8/1253 , H01M8/126 , H01M8/1246
摘要： In various embodiments, a solid oxide fuel cell features a functional layer for reducing interfacial resistance between the cathode and the solid electrolyte.

10. 发明申请

US20170241628A1 Suction Lighting System and Method 审中-公开
公开(公告)号：US20170241628A1
公开(公告)日：2017-08-24
申请号：US15590285
申请日：2017-05-09
申请人： Ji Pan , Huang Ming
发明人： Ji Pan , Huang Ming
IPC分类号： F21V21/092 , B60Q1/26 , F21V21/08
CPC分类号： F21V21/0925 , F21V21/08 , F21V21/092 , F21W2121/00 , F21Y2115/10 , G09F13/22 , G09F2013/222
摘要： A suction lighting system may provide a plurality of suction cups that may attach to a surface and display an advertisement or a decorative facade. The suction lighting system may provide at least one suction cup that may be provided to attach to the surface and may emit light from one or more LEDs. The method may provide steps for advertising on or decorating a structure utilizing a set of suction light devices. The method may include searching for available advertising space and displaying the advertisement within the space.

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