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1. 发明授权

US11562867B2 Movable contact mechanism of double-breakpoint circuit breaker 有权
公开(公告)号：US11562867B2
公开(公告)日：2023-01-24
申请号：US17294397
申请日：2019-01-15
申请人： Jianping Zhao
发明人： Jianping Zhao
IPC分类号： H01H33/04 , H01H33/42
摘要： A movable contact mechanism of a double-breakpoint circuit breaker comprises a front static contact having a first contact point at the rear end, a rear contact assembly having a connecting plate with a rear static contact at the front end, and a movable contact which are placed in the horizontal direction, wherein an insertion slot is formed in the front end of the rear static contact the front contact end of the movable static is equipped with a second contact point matched with the first contact point, and the rear insertion end of the movable contact is inserted into or separated from the insertion slot and the opening or closing stroke of the first contact point and the second contact point is greater than the stroke that the rear insertion end of the movable contact is inserted into or separated from the insertion slot.

2. 发明授权

US08968588B2 Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus 有权
标题翻译：低电子温度微波表面波等离子体（SWP）处理方法及装置
公开(公告)号：US08968588B2
公开(公告)日：2015-03-03
申请号：US13436458
申请日：2012-03-30
申请人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
发明人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32293 , H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
摘要翻译：表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

3. 发明授权

US08883024B2 Using vacuum ultra-violet (VUV) data in radio frequency (RF) sources 有权
标题翻译：在射频（RF）源中使用真空紫外线（VUV）数据
公开(公告)号：US08883024B2
公开(公告)日：2014-11-11
申请号：US13275929
申请日：2011-10-18
申请人： Lee Chen , Jianping Zhao
发明人： Lee Chen , Jianping Zhao
IPC分类号： G01L23/06 , H01J37/32 , H01L21/67
CPC分类号： H01L21/67069 , H01J37/32926 , H01J37/32972 , H01J37/3299 , H01J2237/334 , H01L21/67213 , H01L21/67253
摘要： The invention provide apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDƒ) data and associated (VUV/EEDƒ)-related procedures in (VUV/EEDƒ) etch systems. The (VUV/EEDƒ)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDƒ)-related models that can include Multi-Input/Multi-Output (MIMO) models.
摘要翻译：本发明提供了在（VUV / EED f）中使用真空超紫（VUV）数据和电子能量分布函数（EED f）数据和相关（VUV / EED f）相关程序实时地在衬底上产生栅极结构的装置和方法。）蚀刻系统。（VUV /EEDƒ）相关程序可以包括可以包括多输入/多输出（MIMO）模型的多层多步骤处理序列和（VUV /EEDƒ）相关模型。

4. 发明申请

US20130256272A1 LOW ELECTRON TEMPERATURE MICROWAVE SURFACE-WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS 有权
标题翻译：低电子温度微波表面波等离子体（SWP）处理方法和装置
公开(公告)号：US20130256272A1
公开(公告)日：2013-10-03
申请号：US13436458
申请日：2012-03-30
申请人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
发明人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
IPC分类号： H05H1/24 , B44C1/22 , C23C16/511 , C23C16/52
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32293 , H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
摘要翻译：表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

5. 发明授权

US08486798B1 Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof 有权
标题翻译：包含半导体结的可变电容室部件及其制造和使用方法
公开(公告)号：US08486798B1
公开(公告)日：2013-07-16
申请号：US13366340
申请日：2012-02-05
申请人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
发明人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/20 , H01L29/93 , H01L21/306
CPC分类号： H01J37/32807 , H01J37/32623 , H01J37/32633 , H01J37/32642
摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.
摘要翻译：描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化交界处

6. 发明申请

US20130084706A1 Plasma-Tuning Rods in Surface Wave Antenna (SWA) Sources 审中-公开
标题翻译：等离子体调谐棒在表面波天线（SWA）来源
公开(公告)号：US20130084706A1
公开(公告)日：2013-04-04
申请号：US13249418
申请日：2011-09-30
申请人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihiko Iwao , Peter L.G. Ventzek
发明人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihiko Iwao , Peter L.G. Ventzek
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： H01J37/3222 , H01J37/32256 , H01J37/32293
摘要： The invention provides a plurality of Surface Wave Antenna (SWA) plasma sources. The SWA plasma sources can comprise one or more non-circular slot antennas, each having a plurality of plasma-tuning rods extending therethrough. Some of the plasma tuning rods can be configured to couple the electromagnetic (EM) energy from one or more of the non-circular slot antennas to the process space within the process chamber. The invention also provides SWA plasma sources that can comprise a plurality of resonant cavities, each having one or more plasma-tuning rods extending therefrom. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber.
摘要翻译：本发明提供了多个表面波天线（SWA）等离子体源。 SWA等离子体源可以包括一个或多个非圆形缝隙天线，每个天线具有延伸穿过其中的多个等离子体调谐杆。一些等离子体调谐杆可以被配置为将来自一个或多个非圆形缝隙天线的电磁（EM）能量耦合到处理室内的处理空间。本发明还提供了可以包括多个谐振腔的SWA等离子体源，每个谐振腔具有从其延伸的一个或多个等离子体调谐杆。等离子体调谐杆中的一些可以被配置为将来自一个或多个谐振腔的EM能量耦合到处理室内的处理空间。

7. 发明申请

US20120095586A1 USING VACUUM ULTRA-VIOLET (VUV) DATA IN MICROWAVE SOURCES 有权
标题翻译：在微波源中使用真空紫外线（VUV）数据
公开(公告)号：US20120095586A1
公开(公告)日：2012-04-19
申请号：US13275964
申请日：2011-10-18
申请人： Lee CHEN , Jianping ZHAO
发明人： Lee CHEN , Jianping ZHAO
IPC分类号： G05B23/02 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32926 , H01J37/32972 , H01J37/3299 , H01J2237/334 , H01L21/67213 , H01L21/67253
摘要： The invention provides an apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDf) data and associated (VUV/EEDf)-related procedures in (VUV/EEDf) etch systems. The (VUV/EEDf)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDf)-related models that can include Multi-Input/Multi-Output (MIMO) models.
摘要翻译：本发明提供了一种用于在（VUV / EEDf）数据和VUV / EEDf相关过程中实时使用真空紫外（VUV）数据和电子能量分布函数（EEDf）数据和相关（VUV / EEDf）相关程序实时地在衬底上产生栅极结构的装置和方法。 EEDf）蚀刻系统。（VUV / EEDf）相关程序可以包括可以包括多输入/多输出（MIMO）模型的多层多步骤处理序列和（VUV / EEDf）相关模型。

8. 发明申请

US20110057562A1 Stable surface wave plasma source 有权
标题翻译：稳定的表面波等离子体源
公开(公告)号：US20110057562A1
公开(公告)日：2011-03-10
申请号：US12555080
申请日：2009-09-08
申请人： Lee CHEN , Jianping ZHAO , Ronald V. BRAVENEC , Merritt FUNK
发明人： Lee CHEN , Jianping ZHAO , Ronald V. BRAVENEC , Merritt FUNK
IPC分类号： H05H1/26 , H01P3/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01L21/67005 , H01Q13/10
摘要： A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.
摘要翻译：描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有多个槽的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型，其中第一凹槽构型基本上与多个槽中的槽的第一布置对准，以及形成在等离子体表面中的第二凹槽构型，其中第二凹槽配置部分地与多个槽中的槽的第二布置部分对准或者不与多个槽中的槽的第二布置对准。功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

9. 发明申请

US20220005658A1 MOVABLE CONTACT MECHANISM OF DOUBLE-BREAKPOINT CIRCUIT BREAKER 有权
公开(公告)号：US20220005658A1
公开(公告)日：2022-01-06
申请号：US17294397
申请日：2019-01-15
申请人： JIANPING ZHAO
发明人： JIANPING ZHAO
IPC分类号： H01H33/04 , H01H33/42
摘要： A movable contact mechanism of a double-breakpoint circuit breaker comprises a front static contact having a first contact point at the rear end, a rear contact assembly having a connecting plate with a rear static contact at the front end, and a movable contact which are placed in the horizontal direction, wherein an insertion slot is formed in the front end of the rear static contact the front contact end of the movable static is equipped with a second contact point matched with the first contact point, and the rear insertion end of the movable contact is inserted into or separated from the insertion slot; and the opening or closing stroke of the first contact point and the second contact point is greater than the stroke that the rear insertion end of the movable contact is inserted into or separated from the insertion slot.

10. 发明授权

US08877080B2 Using vacuum ultra-violet (VUV) data in microwave sources 有权
标题翻译：在微波源中使用真空紫外线（VUV）数据
公开(公告)号：US08877080B2
公开(公告)日：2014-11-04
申请号：US13275964
申请日：2011-10-18
申请人： Lee Chen , Jianping Zhao
发明人： Lee Chen , Jianping Zhao
IPC分类号： G01L23/06 , H01L21/67 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/32926 , H01J37/32972 , H01J37/3299 , H01J2237/334 , H01L21/67213 , H01L21/67253
摘要： The invention provides an apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDf) data and associated (VUV/EEDf)-related procedures in (VUV/EEDf) etch systems. The (VUV/EEDf)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDf)-related models that can include Multi-Input/Multi-Output (MIMO) models.
摘要翻译：本发明提供了一种用于在（VUV / EEDf）数据和VUV / EEDf相关过程中实时使用真空紫外（VUV）数据和电子能量分布函数（EEDf）数据和相关（VUV / EEDf）相关程序实时地在衬底上产生栅极结构的装置和方法。 EEDf）蚀刻系统。（VUV / EEDf）相关程序可以包括可以包括多输入/多输出（MIMO）模型的多层多步骤处理序列和（VUV / EEDf）相关模型。

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