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1. 发明授权

US09111727B2 Plasma tuning rods in microwave resonator plasma sources 有权
标题翻译：微波谐振器等离子体源中的等离子体调谐棒
公开(公告)号：US09111727B2
公开(公告)日：2015-08-18
申请号：US13249560
申请日：2011-09-30
申请人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihiko Iwao , Peter L.G. Ventzek
发明人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihiko Iwao , Peter L.G. Ventzek
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32256 , H01J37/32247 , H01J37/32935 , H01L22/00
摘要： The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator subsystem can be coupled to a process chamber using one or more interface subsystems and can comprise one or more resonant cavities, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM-energy from one or more of the resonant cavities to the process space within the process chamber.
摘要翻译：本发明提供了多个谐振器子系统。谐振器子系统可以包括一个或多个谐振腔，其被配置为通过在与等离子体相邻的谐振腔中产生谐振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。谐振器子系统可以使用一个或多个接口子系统耦合到处理室，并且可以包括一个或多个谐振腔，并且每个谐振腔可以具有耦合到其上的多个等离子体调谐棒。一些等离子体调谐杆可被配置成将EM能量从一个或多个谐振腔耦合到处理室内的处理空间。

2. 发明授权

US08721833B2 Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof 有权
标题翻译：包含铁电材料的可变电容室部件及其制造和使用方法
公开(公告)号：US08721833B2
公开(公告)日：2014-05-13
申请号：US13366341
申请日：2012-02-05
申请人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
发明人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/306
CPC分类号： H01J37/32495 , H01J37/32504
摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.
摘要翻译：描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

3. 发明授权

US08532796B2 Contact processing using multi-input/multi-output (MIMO) models 有权
标题翻译：使用多输入/多输出（MIMO）模型的接触处理
公开(公告)号：US08532796B2
公开(公告)日：2013-09-10
申请号：US13077705
申请日：2011-03-31
申请人： Daniel J Prager , Merritt Funk , Peter Biolsi , Ryukichi Shimizu
发明人： Daniel J Prager , Merritt Funk , Peter Biolsi , Ryukichi Shimizu
IPC分类号： H01L21/66 , G06F19/00
CPC分类号： H01L22/20 , H01J37/32082 , H01J37/3266 , H01L21/31116 , H01L21/823871 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a systems and methods for creating Double Pattern (DP) structures on a patterned wafer in real-time using Dual Pattern Contact-Etch (DPCE) processing sequences and associated Contact-Etch-Multi-Input/Multi-Output (CE-MIMO) models. The DPCE processing sequences can include one or more contact-etch procedures, one or more measurement procedures, one or more contact-etch modeling procedures, and one or more contact-etch verification procedures. The CE-MIMO model uses dynamically interacting behavioral modeling between multiple layers and/or multiple contact-etch procedures. The multiple layers and/or the multiple contact-etch procedures can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created during Double Patterning (DP) procedures.
摘要翻译：本发明提供了一种用于在图案化晶片上实时使用双模式接触蚀刻（DPCE）处理序列和相关联的接触蚀刻多输入/多输出（CE- MIMO）模型。 DPCE处理序列可以包括一个或多个接触蚀刻程序，一个或多个测量程序，一个或多个接触蚀刻建模程序以及一个或多个接触蚀刻验证程序。 CE-MIMO模型使用多层和/或多个接触蚀刻程序之间的动态交互行为建模。多层和/或多层接触蚀刻程序可以与在双重图案化（DP）程序期间可以创建的线，沟槽，通孔，间隔物，接触和门结构的创建相关联。

4. 发明申请

US20130200494A1 VARIABLE CAPACITANCE CHAMBER COMPONENT INCORPORATING A SEMICONDUCTOR JUNCTION AND METHODS OF MANUFACTURING AND USING THEREOF 有权
标题翻译：包含半导体结的可变电容室组件及其制造和使用方法
公开(公告)号：US20130200494A1
公开(公告)日：2013-08-08
申请号：US13366340
申请日：2012-02-05
申请人： Zhiying CHEN , Jianping ZHAO , Lee CHEN , Merritt FUNK , Radha SUNDARARAJAN
发明人： Zhiying CHEN , Jianping ZHAO , Lee CHEN , Merritt FUNK , Radha SUNDARARAJAN
IPC分类号： H01L29/93 , H01L21/329
CPC分类号： H01J37/32807 , H01J37/32623 , H01J37/32633 , H01J37/32642
摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.
摘要翻译：描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化交界处

5. 发明授权

US08501499B2 Adaptive recipe selector 有权
标题翻译：自适应配方选择器
公开(公告)号：US08501499B2
公开(公告)日：2013-08-06
申请号：US13073237
申请日：2011-03-28
申请人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
发明人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
IPC分类号： H01L21/00 , H01L21/461 , H01L21/302
CPC分类号： H01L22/20 , H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/6708 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.
摘要翻译：本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

6. 发明授权

US07894927B2 Using Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models for metal-gate structures 有权
标题翻译：使用金属栅结构的多层/多输入/多输出（MLMIMO）模型
公开(公告)号：US07894927B2
公开(公告)日：2011-02-22
申请号：US12186619
申请日：2008-08-06
申请人： Merritt Funk , Radha Sundararajan , Asao Yamashita , Daniel Prager , Hyung Joo Lee
发明人： Merritt Funk , Radha Sundararajan , Asao Yamashita , Daniel Prager , Hyung Joo Lee
IPC分类号： G06F19/00 , G06F17/50 , G06F7/60 , G06F1/00
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要翻译：本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚蚀刻（PE）序列，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多个层和/或多个过程步骤之间的动态交互行为建模。多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。

7. 发明申请

US20100193471A1 METHOD AND SYSTEM FOR CONTROLLING RADICAL DISTRIBUTION 有权
标题翻译：用于控制辐射分布的方法和系统
公开(公告)号：US20100193471A1
公开(公告)日：2010-08-05
申请号：US12754662
申请日：2010-04-06
申请人： Merritt FUNK , David V. Horak , Eric J. Strang , Lee Chen
发明人： Merritt FUNK , David V. Horak , Eric J. Strang , Lee Chen
IPC分类号： C23F1/00 , C23C16/52
CPC分类号： C23C16/4412 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.
摘要翻译：等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

8. 发明授权

US07718030B2 Method and system for controlling radical distribution 有权
标题翻译：控制激进分布的方法和系统
公开(公告)号：US07718030B2
公开(公告)日：2010-05-18
申请号：US11233025
申请日：2005-09-23
申请人： Merritt Funk , David V. Horak , Eric J. Strang , Lee Chen
发明人： Merritt Funk , David V. Horak , Eric J. Strang , Lee Chen
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/455 , C23C16/50
CPC分类号： C23C16/4412 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.
摘要翻译：等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

9. 发明授权

US07674636B2 Dynamic temperature backside gas control for improved within-substrate process uniformity 有权
标题翻译：动态温度背面气体控制，可提高基板内工艺的均匀性
公开(公告)号：US07674636B2
公开(公告)日：2010-03-09
申请号：US11684818
申请日：2007-03-12
申请人： Radha Sundararajan , Lee Chen , Merritt Funk
发明人： Radha Sundararajan , Lee Chen , Merritt Funk
IPC分类号： H01L21/66
CPC分类号： H01L22/20
摘要： A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.
摘要翻译：提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性。

10. 发明申请

US20100036518A1 Using Multi-Layer/Multi-Input/Multi-Output (MLMIMO) Models for Metal-Gate Structures 有权
标题翻译：使用金属门结构的多层/多输入/多输出（MLMIMO）模型
公开(公告)号：US20100036518A1
公开(公告)日：2010-02-11
申请号：US12186619
申请日：2008-08-06
申请人： Merritt Funk , Radha Sundararajan , Asao Yamashita , Daniel Prager , Hyung Joo Lee
发明人： Merritt Funk , Radha Sundararajan , Asao Yamashita , Daniel Prager , Hyung Joo Lee
IPC分类号： G06F19/00
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要翻译：本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚 - 蚀刻（PE）序列，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多层和/或多个过程步骤之间的动态交互行为建模。多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。

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