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1. 发明公开

US20240047197A1 SELECTIVE PASSIVATION AND SELECTIVE DEPOSITION 审中-公开
公开(公告)号：US20240047197A1
公开(公告)日：2024-02-08
申请号：US18491428
申请日：2023-10-20
申请人： ASM IP Holding B.V.
发明人： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie , Viljami J. Pore
IPC分类号： H01L21/02 , H01L21/324 , H01L21/67
CPC分类号： H01L21/0228 , H01L21/02669 , H01L21/324 , H01L21/67213 , H01L21/02315 , H01L21/02068 , H01L21/02178 , H01L21/02118
摘要： Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

2. 发明授权

US11830732B2 Selective passivation and selective deposition 有权
公开(公告)号：US11830732B2
公开(公告)日：2023-11-28
申请号：US17470177
申请日：2021-09-09
申请人： ASM IP HOLDING B.V.
发明人： Jan Willem Hub Maes , Michael Eugene Givens , Suvi P. Haukka , Vamsi Paruchuri , Ivo Johannes Raaijmakers , Shaoren Deng , Andrea Illiberi , Eva E. Tois , Delphine Longrie , Viljami Pore
IPC分类号： H01L21/02 , H01L21/324 , H01L21/67
CPC分类号： H01L21/0228 , H01L21/02068 , H01L21/02118 , H01L21/02178 , H01L21/02315 , H01L21/02669 , H01L21/324 , H01L21/67213
摘要： Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

3. 发明授权

US09982338B2 High-throughput system and method for post-implantation single wafer warm-up 有权
公开(公告)号：US09982338B2
公开(公告)日：2018-05-29
申请号：US15597377
申请日：2017-05-17
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Tsun-Jen Chan , Cheng-Hung Hu , Yi-Hann Chen , Kang Hua Chang , Ming-Te Chen
IPC分类号： C23C14/54 , H01L21/677 , H01L21/67 , H01L21/265 , H01J37/317
CPC分类号： C23C14/54 , H01J37/3171 , H01J2237/31701 , H01L21/265 , H01L21/26593 , H01L21/67115 , H01L21/67201 , H01L21/67213 , H01L21/67745
摘要： A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.

4. 发明申请

US20180096875A1 ADJUSTABLE CIRCUMFERENCE ELECTROSTATIC CLAMP 审中-公开
公开(公告)号：US20180096875A1
公开(公告)日：2018-04-05
申请号：US15281540
申请日：2016-09-30
申请人： Axcelis Technologies, Inc.
发明人： Allan D. Weed
IPC分类号： H01L21/683 , H01L21/265 , H01J37/20 , H01J37/317
CPC分类号： H01L21/6833 , H01J37/20 , H01J37/31 , H01J37/3171 , H01L21/265 , H01L21/67213 , H01L21/67751 , H01L21/6831 , H01L21/68707 , H01L21/68728 , H01L21/68785
摘要： An electrostatic chuck for clamping workpieces having differing diameters is provided. A central electrostatic chuck member associated with a first workpiece and a first peripheral electrostatic chuck member associated with a second workpiece are provided. An elevator translates the first peripheral electrostatic chuck member with respect to central electrostatic chuck member between a retracted position and an extended position. In the retracted position, the first workpiece contacts only the first surface. In the extended position, the second workpiece contacts the first surface and the second surface. A first peripheral shield generally shields the second surface when the first peripheral electrostatic chuck member is in the retracted position. Additional peripheral electrostatic chuck members and peripheral shields can be added to accommodate additional workpiece diameters.

5. 发明授权

US09530674B2 Method and system for three-dimensional (3D) structure fill 有权
标题翻译：三维（3D）结构填充的方法和系统
公开(公告)号：US09530674B2
公开(公告)日：2016-12-27
申请号：US14044138
申请日：2013-10-02
申请人： Ellie Yieh , Ludovic Godet , Srinivas Nemani , Er-Xuan Ping , Gary Dickerson
发明人： Ellie Yieh , Ludovic Godet , Srinivas Nemani , Er-Xuan Ping , Gary Dickerson
IPC分类号： H01L21/00 , H01L21/67 , C23C14/02 , C23C14/04 , C23C16/02 , C23C16/04 , H01L21/02
CPC分类号： H01L21/02271 , C23C14/021 , C23C14/046 , C23C16/0227 , C23C16/045 , C23C16/45544 , C23C16/50 , H01J37/32009 , H01J2237/334 , H01L21/02266 , H01L21/02274 , H01L21/0228 , H01L21/02315 , H01L21/2855 , H01L21/28556 , H01L21/31116 , H01L21/32136 , H01L21/67017 , H01L21/67213 , H01L21/76224
摘要： Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.
摘要翻译：实施例包括3D结构填充的方法和系统。在一个实施例中，在晶片中填充沟槽的方法包括使用离子束相对于沟槽的侧壁以一定角度执行定向等离子体处理，以形成侧壁的处理部分和沟槽的未处理底部。材料沉积在沟槽中。材料在侧壁的处理部分上的沉积速率不同于沟槽的未处理底部上的第二沉积速率。在一个实施例中，一种方法包括在晶片上沉积材料，填充沟槽的底部并在沟槽的侧壁上形成层，以及邻近沟槽的顶表面。该方法包括用相对于侧壁成一定角度的离子束蚀刻该层。

6. 发明申请

US20160217970A1 ION IMPLANTER AND METHOD FOR ION IMPLANTATION 审中-公开
标题翻译：离子植入物和离子植入方法
公开(公告)号：US20160217970A1
公开(公告)日：2016-07-28
申请号：US14607867
申请日：2015-01-28
申请人： ADVANCED ION BEAM TECHNOLOGY, INC.
发明人： Anwar HUSAIN , Valeriy LITVAK
IPC分类号： H01J37/20 , H01J37/18 , H01L21/265 , H01J37/317
CPC分类号： H01L21/265 , H01J2237/20 , H01J2237/2065 , H01J2237/31701 , H01L21/67109 , H01L21/67167 , H01L21/67213
摘要： An ion implanter comprising a process chamber, a FOUP and a temperature treating assembly and a method using the same are provided. A workpiece can be implanted according to a recipe of an ion implantation in the process chamber. The FOUP can transfer a workpiece toward and away from the process chamber. The temperature treating assembly comprises a vacuum chamber, a heating module and a cooling module. The vacuum chamber communicates with the process chamber and has a heating space and a cooling space next to the heating space. The heating module is mounted on the vacuum chamber from a side of the heating space for heating the workpiece located in the heating space to a first temperature. The cooling module is mounted in the cooling space for cooling the workpiece located in the cooling space to a second temperature different from the first temperature.
摘要翻译：提供了包括处理室，FOUP和温度处理组件的离子注入机及其使用方法。可以根据处理室中的离子注入的配方植入工件。 FOUP可以将工件朝向和远离处理室传送。温度处理组件包括真空室，加热模块和冷却模块。真空室与处理室连通，并具有加热空间和靠近加热空间的冷却空间。加热模块从加热空间的一侧安装在真空室上，用于将位于加热空间中的工件加热至第一温度。冷却模块安装在冷却空间中，用于将位于冷却空间中的工件冷却到与第一温度不同的第二温度。

7. 发明申请

US20160181135A1 SYSTEM AND METHOD FOR MOVING WORKPIECES BETWEEN MULTIPLE VACUUM ENVIRONMENTS 有权
标题翻译：用于移动多个真空环境之间的工作的系统和方法
公开(公告)号：US20160181135A1
公开(公告)日：2016-06-23
申请号：US14577187
申请日：2014-12-19
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： James P. Buonodono
IPC分类号： H01L21/677 , H01L21/673 , B25J11/00
CPC分类号： H01L21/67742 , H01L21/67126 , H01L21/67213 , H01L21/67748 , H01L21/68764
摘要： Provided are approaches for transferring workpieces between multiple pressure environments. In one approach, a system for moving workpieces between a first pressure environment and a second pressure environment includes a first vacuum enclosure, a second vacuum enclosure, and an access port disposed between the first vacuum enclosure and the second vacuum enclosure. The system further includes a transfer carrier having a workpiece holder for retaining a workpiece, the transfer carrier disposed within the first vacuum enclosure and moveable between a first process position and a second process position, wherein in the first process position the workpiece is disposed within the first vacuum enclosure, and wherein in the second process position the workpiece holder abuts the access port to expose the workpiece to the second vacuum enclosure and to create a seal around the access port to seal the first vacuum enclosure from the second vacuum enclosure.
摘要翻译：提供了在多个压力环境之间传送工件的方法。在一种方法中，用于在第一压力环境和第二压力环境之间移动工件的系统包括第一真空外壳，第二真空外壳和设置在第一真空外壳和第二真空外壳之间的进入口。所述系统还包括具有用于保持工件的工件保持器的转移支架，所述转移支架设置在所述第一真空外壳内并且可在第一处理位置和第二处理位置之间移动，其中在所述第一处理位置中，第一真空外壳，并且其中在所述第二工艺位置中，所述工件保持器邻接所述进入口以将所述工件暴露于所述第二真空外壳并围绕所述进入端口产生密封，以将所述第一真空外壳与所述第二真空外壳密封。

8. 发明申请

US20160133489A1 Processing System Containing An Isolation Region separating a Deposition chamber from a treatment chamber 审中-公开
标题翻译：包含隔离区域的处理系统将沉积室与处理室分离
公开(公告)号：US20160133489A1
公开(公告)日：2016-05-12
申请号：US14589990
申请日：2015-01-05
申请人： APPLIED MATERIALS, INC.
发明人： Karthik JANAKIRAMAN , Abhijit Basu MALLICK , Hari K. PONNEKANTI , Mandyam SRIRAM , Alexandros T. DEMOS , Mukund SRINIVASAN , Juan Carlos ROCHA-ALVAREZ , Dale R. DUBOIS
IPC分类号： H01L21/67 , C23C16/458 , H01L21/687 , C23C14/58 , C23C14/50 , B05C13/00 , C23C16/56
CPC分类号： H01L21/67207 , H01L21/67126 , H01L21/6719 , H01L21/67213 , H01L21/67709 , H01L21/6776
摘要： An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.
摘要翻译：本文描述了一种用于在包含沉积室，处理室和隔离区域的处理系统中处理衬底的装置和方法，将沉积室与处理分离。沉积室在基板上沉积膜。处理室从沉积室接收衬底并且利用膜性质改变装置改变沉积在沉积室中的膜。根据上述实施例和其他实施例提供处理系统和方法。

9. 发明申请

US20160035608A1 SIDE OPENING UNIFIED POD 有权
公开(公告)号：US20160035608A1
公开(公告)日：2016-02-04
申请号：US14822392
申请日：2015-08-10
申请人： Brooks Automation, Inc.
发明人： Daniel Babbs , William Fosnight , Robert C. May , William Weaver
IPC分类号： H01L21/677 , H01L21/67 , H01L21/673
CPC分类号： H01L21/67766 , H01L21/67201 , H01L21/67207 , H01L21/67213 , H01L21/67225 , H01L21/67376 , H01L21/67379 , H01L21/67393 , H01L21/67742 , H01L21/67772 , H01L21/67775 , H01L21/67778 , Y10S414/14
摘要： A substrate processing system including a processing section arranged to hold a processing atmosphere therein, a carrier having a shell forming an internal volume for holding at least one substrate for transport to the processing section, the shell being configured to allow the internal volume to be pumped down to a predetermined vacuum pressure that is different than an exterior atmosphere outside the substrate processing system, and a load port communicably connected to the processing section to isolate the processing atmosphere from the exterior atmosphere, the load port being configured to couple with the carrier to pump down the internal volume of the carrier and to communicably connect the carrier to the processing section, for loading the substrate into the processing section through the load port.

10. 发明授权

US09133542B2 Coating methods and apparatus 有权
标题翻译：涂布方法和装置
公开(公告)号：US09133542B2
公开(公告)日：2015-09-15
申请号：US13395499
申请日：2010-11-30
申请人： James W. Neal , Robert F. Latour , Benjamin J. Zimmerman
发明人： James W. Neal , Robert F. Latour , Benjamin J. Zimmerman
IPC分类号： C23C16/46 , C23C16/02 , C23C16/52 , C23C14/02 , H01L21/67 , C23C14/54 , C23C14/56
CPC分类号： C23C14/02 , C23C14/024 , C23C14/541 , C23C14/566 , H01L21/67173 , H01L21/67213
摘要： A coating apparatus comprises a coating chamber for coating the articles. The at least one preheat chamber is coupled to the coating chamber. The at least one loading station has a proximal end connectable to at least one of the preheat chambers when in an installed position at a distal end of the preheat chamber. The loading station further includes a carrier for carrying the articles and a drive system. The drive system is positioned to move the carrier between: a loading/unloading position of the carrier in the loading station; a preheat position of the carrier in the preheat chamber to which the loading station is connected; and a deposition position of the carrier in the coating chamber. A gas source is connected to the preheat chamber.
摘要翻译：涂布装置包括用于涂覆物品的涂布室。所述至少一个预热室联接到所述涂覆室。当处于预热室的远端处的安装位置时，至少一个装载站具有可连接到至少一个预热室的近端。装载站还包括用于承载物品的托架和驱动系统。所述驱动系统定位成在所述装载站中的所述载体的装载/卸载位置之间移动所述载体; 载体在加载站连接到的预热室中的预热位置; 以及载体在涂覆室中的沉积位置。气源连接到预热室。

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