专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06632306B1 Method and apparatus for splicing drip irrigation tape 失效
标题翻译：滴灌胶带拼接方法及装置
公开(公告)号：US06632306B1
公开(公告)日：2003-10-14
申请号：US09632813
申请日：2000-08-07
申请人： John C. Roberts , Jack Butler
发明人： John C. Roberts , Jack Butler
IPC分类号： B29C7314
CPC分类号： B29C65/305 , B29C65/18 , B29C65/4815 , B29C65/5021 , B29C65/5042 , B29C66/004 , B29C66/1122 , B29C66/1142 , B29C66/5221 , B29C66/5229 , B29C66/612 , B29C66/636 , B29C66/71 , B29C66/723 , B29C66/8161 , B29C66/8181 , B29C66/8221 , B29C66/8286 , B29C66/83241 , B29C66/8614 , B29L2023/22 , B29K2023/06
摘要： A method of splicing together the ends of two lengths of drip irrigation tape is disclosed in which a tubular insert having an inner layer of high melting point material and an outer layer of bonding material is placed into the end of a first length of drip irrigation tape so that a portion of the insert projects outwardly from the end of the tape. The end of a second length of drip irrigation tape is then placed over the projecting end of the tubular insert so that the two tape ends are butted up against one another or close to one another. Both lengths of tape are then sealed to the outer bonding layer of the insert.
摘要翻译：公开了一种将两段滴灌带的端部拼接在一起的方法，其中具有高熔点材料内层和接合材料外层的管状插入件放置在第一长度的滴灌带的末端使得插入件的一部分从带的端部向外伸出。然后将第二长度的滴灌带的末端放置在管状插入件的突出端上，使得两个带末端彼此对接或彼此靠近。然后将两条长度的胶带密封到插入件的外部粘结层上

2. 发明授权

US5950726A Increased oil and gas production using elastic-wave stimulation 失效
标题翻译：使用弹性波刺激增加油气产量
公开(公告)号：US5950726A
公开(公告)日：1999-09-14
申请号：US906585
申请日：1997-08-05
申请人： John C. Roberts
发明人： John C. Roberts
IPC分类号： E21B28/00 , E21B43/00 , E21B43/25 , G01V1/137
CPC分类号： E21B43/003 , E21B28/00 , E21B43/25 , G01V1/137
摘要： An apparatus and method for increasing subterranean fluid production are disclosed. A downhole stimulation apparatus produces elastic wave energy which propagates into the subterranean strata of nearby fluid fields. The wave energy creates gravity separation of the fluids, altering the phase permeability of subterranean formations and causing the fluid to migrate to wells in the field being stimulated. The stimulation apparatus employs an underground casing which provides a sealed vessel in which is supported a tubing string. The casing and tubing string are filled with a working fluid. A pumping unit reciprocates a plunger within the tubing string to cyclically pressurize and depressurize the working fluid, the depressurization of working fluid creating the elastic wave energy.
摘要翻译：公开了一种用于增加地下液体生产的装置和方法。井下刺激装置产生弹性波能量，其传播到附近流体场的地下层。波浪能量产生流体的重力分离，改变地下地层的渗透性并使流体迁移到被刺激的场中的井。刺激装置采用地下壳体，其提供密封容器，其中支撑有油管柱。套管和管柱填充有工作流体。泵送单元使管柱内的柱塞往复运动，以循环地对工作流体加压和减压，从而产生弹性波能量的工作流体的减压。

3. 发明授权

US5596095A Formation and utility of sulfonic acid protecting groups 失效
标题翻译：磺酸保护基团的形成与应用
公开(公告)号：US5596095A
公开(公告)日：1997-01-21
申请号：US440547
申请日：1995-05-12
申请人： John C. Roberts , Raymond J. Patch
发明人： John C. Roberts , Raymond J. Patch
IPC分类号： C07C303/02 , C07C303/24 , C07C309/74 , C07D311/72 , C07D501/20 , C07J31/00 , C07J41/00 , C07D501/60 , A61K31/545
CPC分类号： C07C309/77 , C07C303/02 , C07C303/28 , C07D311/72 , C07J31/006 , C07J41/0055 , Y02P20/55
摘要： The present invention is a method of protecting a sulfonic acid functional group in an organic molecule as a substituted or unsubstituted neopentyl sulfonate ester. The method allows the conversion of R--SO.sub.3 --H to R'--SO.sub.3 --H, wherein R and R' are different organic radicals. Also disclosed is a method of increasing the bioavailability of drugs with a sulfonic acid functional group by protecting the sulfonic acid functional group as a substituted neopentyl sulfonate ester which has a masked heteroatom nucleophile. The masked nucleophile can be liberated in vivo, resulting in removal of the neopentyl protecting group and regeneration of the parent drug.
摘要翻译：本发明是保护作为取代或未取代的新戊基磺酸酯的有机分子中的磺酸官能团的方法。该方法允许将R-SO 3 -H转化为R'-SO3-H，其中R和R'是不同的有机基团。还公开了通过保护磺酸官能团作为具有掩蔽的杂原子亲核试剂的取代的新戊基磺酸酯来提高具有磺酸官能团的药物的生物利用度的方法。掩蔽的亲核试剂可以在体内释放，导致新戊基保护基的去除和母体药物的再生。

4. 发明授权

US5538899A Analyzing for alkyl ketene dimers 失效
标题翻译：分析烷基烯酮二聚体
公开(公告)号：US5538899A
公开(公告)日：1996-07-23
申请号：US211475
申请日：1994-08-02
申请人： John C. Roberts , Ya J. Zhou
发明人： John C. Roberts , Ya J. Zhou
IPC分类号： G01N31/22
CPC分类号： G01N31/22 , G01N31/221 , Y10T436/20 , Y10T436/200833 , Y10T436/202499
摘要： A method of analysing a sample for alkyl ketene dimer (AKD) comprises treating the sample (or extract thereof) with a reagent which will react with an AKD to produce a detectable derivative. The preferred reagent is 4-(N,N'-dimethylamino)pyridine.
摘要翻译： PCT No.PCT / GB92 / 01821 Sec。 371日期1994年8月2日 102（e）日期1994年8月2日PCT提交1992年10月5日PCT公布。公开号WO93 / 07484 日期：1993年04月15日分析烷基烯酮二聚体（AKD）样品的方法包括用与AKD反应产生可检测衍生物的试剂处理样品（或其提取物）。优选的试剂是4-（N，N'-二甲基氨基）吡啶。

5. 发明授权

US829604A Hydrocarbon-vapor burner. 失效
公开(公告)号：US829604A
公开(公告)日：1906-08-28
申请号：US1899736900
申请日：1899-11-13
申请人： JOHN C ROBERTS
发明人： PUFFER CHARLES J
CPC分类号： F23D91/02

6. 发明授权

US10096701B2 Gallium nitride materials and methods associated with the same 有权
公开(公告)号：US10096701B2
公开(公告)日：2018-10-09
申请号：US12023480
申请日：2008-01-31
申请人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
发明人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
IPC分类号： H01L29/778 , H01L21/02 , H01L29/20 , H01L29/43
摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

7. 发明申请

US20100295056A1 III-NITRIDE MATERIALS INCLUDING LOW DISLOCATION DENSITIES AND METHODS ASSOCIATED WITH THE SAME 有权
标题翻译：三氮化物材料包括低偏差密度和与之相关的方法
公开(公告)号：US20100295056A1
公开(公告)日：2010-11-25
申请号：US12748778
申请日：2010-03-29
申请人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
发明人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B29/403 , C30B25/02 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/02513 , H01L21/0254 , H01L21/02543
摘要： Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.
摘要翻译：提供包括一个或多个III族氮化物材料区域（例如，氮化镓材料区域）的半导体结构以及与这种结构相关联的方法。 III族氮化物材料区域有利地具有低位错密度，特别是低螺旋位错密度。在一些实施方案中，可以基本上消除III族氮化物材料区域中螺旋位错的存在。在III族氮化物材料区域和/或加工条件下存在应变吸收层有助于实现低螺旋位错密度。在一些实施例中，具有低位错密度的III族氮化物材料区域包括用作该器件的有源区域的氮化镓材料区域。活性器件区域（例如，氮化镓材料区域）的低螺旋位错密度可以通过增加电子传输，限制非辐射复合和增加组成/生长均匀性等而导致改进的性能（例如电和光学）效果。

8. 发明申请

US20080246058A1 GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH THE SAME 有权
标题翻译：氮化镓材料晶体管及其相关方法
公开(公告)号：US20080246058A1
公开(公告)日：2008-10-09
申请号：US12059182
申请日：2008-03-31
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L29/00
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

9. 外观设计

USD377835S Combined skylight and base 失效
公开(公告)号：USD377835S
公开(公告)日：1997-02-04
申请号：US48572
申请日：1995-01-04
申请人： Gilbert F. Fisher, III , John C. Roberts
设计人： Gilbert F. Fisher, III , John C. Roberts

10. 发明授权

US4967091A Reflective picture generator 失效
标题翻译：反光图像发生器
公开(公告)号：US4967091A
公开(公告)日：1990-10-30
申请号：US269039
申请日：1988-11-09
申请人： Martin L. Fair , John C. Roberts
发明人： Martin L. Fair , John C. Roberts
IPC分类号： G01J5/00 , G01J5/52
CPC分类号： G01J5/522 , G01J2005/0048
摘要： Apparatus for testing and/or calibrating a detector comprising a latent image generator, the generator having differing reflectance coefficients across its surface such that in use, when irradiated by collimated radiation the output intensity from some regions is relatively high and from other regions is relatively low.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式