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1. 发明授权

US08748298B2 Gallium nitride materials and methods associated with the same 有权
标题翻译：氮化镓材料和方法相关
公开(公告)号：US08748298B2
公开(公告)日：2014-06-10
申请号：US12023451
申请日：2008-01-31
申请人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
发明人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/02543 , H01L29/2003 , H01L29/432
摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.
摘要翻译：提供了包括氮化镓材料区域的半导体材料和与这种结构相关联的方法。半导体结构包括在该结构内形成的应变吸收层。应变吸收层可以形成在衬底（例如，硅衬底）和上覆层之间。应变吸收层非常薄，具有非晶结构并且由氮化硅基材料形成可能是优选的。应变吸收层可以减少在上层（例如，氮化物基材料层）中形成的失配位错的数量，其限制在其它覆盖层（例如，氮化镓材料区域）中形成其他类型的缺陷，其他优点。因此，应变吸收层的存在可以提高氮化镓材料区域的质量，这可以导致改进的器件性能。

2. 发明授权

US07994540B2 Gallium nitride material transistors and methods associated with the same 有权
标题翻译：氮化镓材料晶体管和与之相关的方法
公开(公告)号：US07994540B2
公开(公告)日：2011-08-09
申请号：US12508871
申请日：2009-07-24
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L31/0328
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

3. 发明授权

US07365374B2 Gallium nitride material structures including substrates and methods associated with the same 有权
标题翻译：氮化镓材料结构，包括与其相关的衬底和方法
公开(公告)号：US07365374B2
公开(公告)日：2008-04-29
申请号：US11121793
申请日：2005-05-03
申请人： Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Kevin J. Linthicum
发明人： Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Kevin J. Linthicum
IPC分类号： H01L31/0328
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L29/2003 , H01L29/267 , H01L29/66462 , H01L29/7783
摘要： Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.
摘要翻译：提供了氮化镓材料基半导体结构。在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时减少整个结构的翘曲。氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

4. 发明授权

US07135720B2 Gallium nitride material transistors and methods associated with the same 有权
公开(公告)号：US07135720B2
公开(公告)日：2006-11-14
申请号：US10913297
申请日：2004-08-05
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook, Jr. , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L31/072
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

5. 发明授权

US10096701B2 Gallium nitride materials and methods associated with the same 有权
公开(公告)号：US10096701B2
公开(公告)日：2018-10-09
申请号：US12023480
申请日：2008-01-31
申请人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
发明人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
IPC分类号： H01L29/778 , H01L21/02 , H01L29/20 , H01L29/43
摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

6. 发明申请

US20100295056A1 III-NITRIDE MATERIALS INCLUDING LOW DISLOCATION DENSITIES AND METHODS ASSOCIATED WITH THE SAME 有权
标题翻译：三氮化物材料包括低偏差密度和与之相关的方法
公开(公告)号：US20100295056A1
公开(公告)日：2010-11-25
申请号：US12748778
申请日：2010-03-29
申请人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
发明人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B29/403 , C30B25/02 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/02513 , H01L21/0254 , H01L21/02543
摘要： Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.
摘要翻译：提供包括一个或多个III族氮化物材料区域（例如，氮化镓材料区域）的半导体结构以及与这种结构相关联的方法。 III族氮化物材料区域有利地具有低位错密度，特别是低螺旋位错密度。在一些实施方案中，可以基本上消除III族氮化物材料区域中螺旋位错的存在。在III族氮化物材料区域和/或加工条件下存在应变吸收层有助于实现低螺旋位错密度。在一些实施例中，具有低位错密度的III族氮化物材料区域包括用作该器件的有源区域的氮化镓材料区域。活性器件区域（例如，氮化镓材料区域）的低螺旋位错密度可以通过增加电子传输，限制非辐射复合和增加组成/生长均匀性等而导致改进的性能（例如电和光学）效果。

7. 发明申请

US20080246058A1 GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH THE SAME 有权
标题翻译：氮化镓材料晶体管及其相关方法
公开(公告)号：US20080246058A1
公开(公告)日：2008-10-09
申请号：US12059182
申请日：2008-03-31
申请人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
发明人： Walter H. Nagy , Ricardo M. Borges , Jeffrey D. Brown , Apurva D. Chaudhari , James W. Cook , Allen W. Hanson , Jerry W. Johnson , Kevin J. Linthicum , Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Sameer Singhal , Robert J. Therrien , Andrei Vescan
IPC分类号： H01L29/00
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管和与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

8. 发明授权

US08368117B2 III-nitride materials including low dislocation densities and methods associated with the same 有权
标题翻译： III族氮化物材料包括低位错密度和与其相关的方法
公开(公告)号：US08368117B2
公开(公告)日：2013-02-05
申请号：US12748778
申请日：2010-03-29
申请人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
发明人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
IPC分类号： H01L31/101
CPC分类号： C30B29/403 , C30B25/02 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/02513 , H01L21/0254 , H01L21/02543
摘要： Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.
摘要翻译：提供包括一个或多个III族氮化物材料区域（例如，氮化镓材料区域）的半导体结构以及与这种结构相关联的方法。 III族氮化物材料区域有利地具有低位错密度，特别是低螺旋位错密度。在一些实施方案中，可以基本上消除III族氮化物材料区域中螺旋位错的存在。在III族氮化物材料区域和/或加工条件下存在应变吸收层有助于实现低螺旋位错密度。在一些实施例中，具有低位错密度的III族氮化物材料区域包括用作该器件的有源区域的氮化镓材料区域。活性器件区域（例如，氮化镓材料区域）的低螺旋位错密度可以通过增加电子传输，限制非辐射复合和增加组成/生长均匀性等而导致改进的性能（例如电和光学）效果。

9. 发明授权

US07791106B2 Gallium nitride material structures including substrates and methods associated with the same 有权
标题翻译：氮化镓材料结构，包括与其相关的衬底和方法
公开(公告)号：US07791106B2
公开(公告)日：2010-09-07
申请号：US12024313
申请日：2008-02-01
申请人： Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Kevin J. Linthicum
发明人： Edwin L. Piner , Pradeep Rajagopal , John C. Roberts , Kevin J. Linthicum
IPC分类号： H01L29/06
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L29/2003 , H01L29/267 , H01L29/66462 , H01L29/7783
摘要： Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.
摘要翻译：提供了氮化镓材料基半导体结构。在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时减少整个结构的翘曲。氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

10. 发明授权

US07687827B2 III-nitride materials including low dislocation densities and methods associated with the same 有权
标题翻译： III族氮化物材料包括低位错密度和与其相关的方法
公开(公告)号：US07687827B2
公开(公告)日：2010-03-30
申请号：US10886506
申请日：2004-07-07
申请人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
发明人： Edwin L. Piner , John C. Roberts , Pradeep Rajagopal
IPC分类号： H01L31/101
CPC分类号： C30B29/403 , C30B25/02 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/02513 , H01L21/0254 , H01L21/02543
摘要： Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.
摘要翻译：提供包括一个或多个III族氮化物材料区域（例如，氮化镓材料区域）的半导体结构以及与这种结构相关联的方法。 III族氮化物材料区域有利地具有低位错密度，特别是低螺旋位错密度。在一些实施方案中，可以基本上消除III族氮化物材料区域中螺旋位错的存在。在III族氮化物材料区域和/或加工条件下存在应变吸收层有助于实现低螺旋位错密度。在一些实施例中，具有低位错密度的III族氮化物材料区域包括用作该器件的有源区域的氮化镓材料区域。活性器件区域（例如，氮化镓材料区域）的低螺旋位错密度可以通过增加电子传输，限制非辐射复合和增加组成/生长均匀性等而导致改进的性能（例如电和光学）效果。

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