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1. 发明授权

US08549272B2 Information handling system image management deployment of virtual machine images to physical information handling systems 有权
公开(公告)号：US08549272B2
公开(公告)日：2013-10-01
申请号：US12703230
申请日：2010-02-10
申请人： John Mullin , Campbell McNeill , Christopher Speers , Dana Ragsdill , John Tracey , Lawrence Smithmier
发明人： John Mullin , Campbell McNeill , Christopher Speers , Dana Ragsdill , John Tracey , Lawrence Smithmier
IPC分类号： G06F15/177 , G06F9/00
CPC分类号： G06F9/45533 , G06F8/63 , G06F8/65 , G06F9/44505 , G06F9/452
摘要： Images for information handling system manufacture and maintenance are created and managed by manipulating the images as virtual machines through a secure remote network interface, such as a virtual private network or virtual desktop infrastructure. Operating system and application installation and updates, such as service packs and patches, are performed on a virtual machine of the image to adjust the image as desired, and then the image is transformed for loading on physical information handling systems, such as newly manufactured information handling systems or deployed information handling systems in need of maintenance.

2. 发明授权

US07648877B2 Structure and method for forming laterally extending dielectric layer in a trench-gate FET 有权
标题翻译：在沟槽栅FET中形成横向延伸的电介质层的结构和方法
公开(公告)号：US07648877B2
公开(公告)日：2010-01-19
申请号：US11166356
申请日：2005-06-24
申请人： John Tracey Andrews
发明人： John Tracey Andrews
IPC分类号： H01L21/336
CPC分类号： H01L29/66734 , H01L29/407 , H01L29/42368 , H01L2924/0002 , H01L2924/00
摘要： A field effect transistor (FET) is formed as follows. A trench is formed in a silicon region. An oxidation barrier layer is formed over a surface of the silicon region adjacent the trench and along the trench sidewalls and bottom. A protective layer is formed over the oxidation barrier layer inside and outside the trench. The protective layer is partially removed such that a portion of the oxidation barrier layer extending at least along the trench bottom becomes exposed and portions of the oxidation barrier layer extending over the surface of the silicon region adjacent the trench remain covered by remaining portions of the protective layer.
摘要翻译：场效应晶体管（FET）如下形成。在硅区域形成沟槽。在邻近沟槽的硅区域的表面上并且沿着沟槽侧壁和底部形成氧化阻挡层。在沟槽内部和外部的氧化阻挡层上形成保护层。保护层被部分去除，使得至少沿着沟槽底部延伸的部分氧化阻挡层变得暴露，并且在靠近沟槽的硅区域的表面上延伸的氧化阻挡层的部分保持被保护层的剩余部分覆盖层。

3. 发明申请

US20060075007A1 System and method for optimizing a storage system to support full utilization of storage space 审中-公开
标题翻译：用于优化存储系统以支持充分利用存储空间的系统和方法
公开(公告)号：US20060075007A1
公开(公告)日：2006-04-06
申请号：US10943397
申请日：2004-09-17
申请人： Kay Anderson , Frederick Douglis , Nagui Halim , John Palmer , Elizabeth Richards , David Tao , William Tetzlaff , John Tracey , Joel Wolf
发明人： Kay Anderson , Frederick Douglis , Nagui Halim , John Palmer , Elizabeth Richards , David Tao , William Tetzlaff , John Tracey , Joel Wolf
IPC分类号： G06F12/00
CPC分类号： G06F3/0652 , G06F3/0608 , G06F3/0649 , G06F3/0683
摘要： A system and method for optimizing a storage system to support full utilization of storage space are provided. With the system and method, data objects/containers of data objects are assigned retention values when they are created. These retention values may be dynamically modified based on a modification function associated with the data objects/containers. When storage space needs to be freed for the storage of new data objects/containers, the retention values of existing data objects/containers provide a prioritization as to which data objects/containers should be deleted from the storage system and the order by which these data objects/containers are to be deleted to make available storage space for the new data objects/containers. The identification of the data objects/containers that are to be deleted may be based on a dynamically modified delete threshold, a sorted list of retention values, or the like.
摘要翻译：提供了一种用于优化存储系统以支持充分利用存储空间的系统和方法。使用系统和方法，数据对象/数据对象的容器在创建时将被分配保留值。可以基于与数据对象/容器相关联的修改功能来动态地修改这些保留值。当需要释放存储空间以存储新的数据对象/容器时，现有数据对象/容器的保留值提供了从存储系统中删除哪些数据对象/容器以及这些数据的顺序的优先级对象/容器将被删除，为新的数据对象/容器提供可用的存储空间。要删除的数据对象/容器的标识可以基于动态修改的删除阈值，保留值的排序列表等。

4. 发明申请

US20060015651A1 Apparatus and method for supporting memory management in an offload of network protocol processing 有权
标题翻译：用于在卸载网络协议处理中支持存储器管理的装置和方法
公开(公告)号：US20060015651A1
公开(公告)日：2006-01-19
申请号：US10890978
申请日：2004-07-14
申请人： Douglas Freimuth , Elbert Hu , Ronald Mraz , Erich Nahum , Prashant Pradhan , Sambit Sahu , John Tracey
发明人： Douglas Freimuth , Elbert Hu , Ronald Mraz , Erich Nahum , Prashant Pradhan , Sambit Sahu , John Tracey
IPC分类号： G06F15/16
CPC分类号： G06F13/30
摘要： A number of improvements in network adapters that offload protocol processing from the host processor are provided. Specifically, mechanisms for handling memory management and optimization within a system utilizing an offload network adapter are provided. The memory management mechanism permits both buffered sending and receiving of data as well as zero-copy sending and receiving of data. In addition, the memory management mechanism permits grouping of DMA buffers that can be shared among specified connections based on any number of attributes. The memory management mechanism further permits partial send and receive buffer operation, delaying of DMA requests so that they may be communicated to the host system in bulk, and expedited transfer of data to the host system.
摘要翻译：提供了从主机处理器卸载协议处理的网络适配器的许多改进。具体地说，提供了利用卸载网络适配器在系统内处理存储器管理和优化的机制。存储器管理机制允许数据的缓冲发送和接收以及零拷贝发送和接收数据。此外，存储器管理机制允许基于任何数量的属性对可以在指定连接之间共享的DMA缓冲器进行分组。存储器管理机制进一步允许部分发送和接收缓冲器操作，延迟DMA请求，使得它们可以批量地传送到主机系统，并且将数据快速传送到主机系统。

5. 发明授权

US875060A Gage attachment for printing-presses. 失效
标题翻译：打印压力的附件。
公开(公告)号：US875060A
公开(公告)日：1907-12-31
申请号：US1907369624
申请日：1907-04-22
申请人： GAY JOHN TRACEY
发明人： GAY JOHN TRACEY
CPC分类号： B41F1/28

6. 发明申请

US20050131939A1 Method and apparatus for data redundancy elimination at the block level 失效
标题翻译：在块级消除数据冗余的方法和装置
公开(公告)号：US20050131939A1
公开(公告)日：2005-06-16
申请号：US10737213
申请日：2003-12-16
申请人： Frederick Douglis , Purushottam Kulkarni , Jason LaVoie , John Tracey
发明人： Frederick Douglis , Purushottam Kulkarni , Jason LaVoie , John Tracey
IPC分类号： G06F17/00
CPC分类号： H03M7/30 , G06F11/1453
摘要： A redundancy elimination mechanism is provided, which applies aspects of duplicate block elimination and delta encoding at the block level. The redundancy elimination mechanism divides file objects into content-defined blocks or “chunks.” Identical chunks are suppressed. The redundancy elimination mechanism also performs resemblance detection on remaining chunks to identify chunks with sufficient redundancy to benefit from delta encoding of individual chunks. Any remaining chunks that do not benefit from delta encoding are compressed. Resemblance detection is optimized by merging groups of fingerprints into super fingerprints. This merging can be constructed to ensure that if two objects have a single super fingerprint in common, they are extremely likely to be substantially similar.
摘要翻译：提供了冗余消除机制，其在块级应用重复块消除和增量编码的方面。冗余消除机制将文件对象分为内容定义的块或“块”。相同的块被抑制。冗余消除机制还对剩余的块执行相似性检测，以识别具有足够冗余度的块以从单个块的增量编码中受益。任何不受益于delta编码的剩余块被压缩。通过将指纹组合并成超级指纹来优化相似度检测。可以构建这种合并，以确保如果两个对象具有共同的单个超级指纹，则它们极有可能基本相似。

7. 发明授权

US06220088B1 Assessment of patient support systems 失效
标题翻译：评估病人支援系统
公开(公告)号：US06220088B1
公开(公告)日：2001-04-24
申请号：US08624522
申请日：1996-06-06
申请人： John Tracey Scales , Duncan Shirreffs Bain
发明人： John Tracey Scales , Duncan Shirreffs Bain
IPC分类号： G01N100
CPC分类号： G01M99/00 , A47C31/123 , A47C31/126 , G01N3/40 , G01N2203/0246 , G09B23/32
摘要： A method and equipment for assessing the suitability of support surfaces such as mattresses and chairs is disclosed. The method comprises applying a load to each of two such support surfaces with a first indenter having a given profile and a substantially rigid form and measuring the interface pressure, applying the same load to each said surface with a second indenter having substantially the same profile as said first indenter, but having a viscoelastic form and measuring the interface pressure and deriving information as to the characteristics of the supporting surfaces by comparing said measurements. The invention also includes a human phantom for use in testing or comparing support surfaces which comprises a buttocks portion representing the human buttocks and comprising substantially rigid pelvic and femoral parts and a viscoelastic member covering said pelvic and femoral parts, said buttocks portion being pivotably linked to a torso and head portion and the phantom includes means to maintain the torso portion in a plurality of angular positions with respect to the pelvic and femoral parts while making interfacial pressure measurements.
摘要翻译：公开了一种用于评估诸如床垫和椅子之类的支撑表面的适用性的方法和设备。该方法包括使用具有给定轮廓和基本上刚性形状的第一压头施加负载，并测量界面压力，并用第二压头施加与每个所述表面相同的载荷，所述第二压头具有与所述第一压头，但是具有粘弹性形式并且通过比较所述测量值来测量界面压力并得出关于支撑表面的特性的信息。本发明还包括用于测试或比较支撑表面的人体模型，其包括表示人类臀部的臀部部分，并且包括基本上刚性的骨盆和股骨部分以及覆盖所述骨盆和股骨部分的粘弹性部件，所述臀部部分可枢转地连接到躯体和头部，并且体模包括在进行界面压力测量时将躯干部分相对于骨盆和股骨部分保持在多个角位置的装置。

8. 发明授权

US08902886B2 Canonicalization of network protocol headers 有权
标题翻译：网络协议头的规范化
公开(公告)号：US08902886B2
公开(公告)日：2014-12-02
申请号：US12428992
申请日：2009-04-23
申请人： Hubertus Franke , Douglas M. Freimuth , David P. Olshefski , John Tracey , Dinesh Verma , Charles P. Wright
发明人： Hubertus Franke , Douglas M. Freimuth , David P. Olshefski , John Tracey , Dinesh Verma , Charles P. Wright
IPC分类号： H04L12/28 , H04J3/00 , G06F15/167 , G06F15/16 , H04L29/06
CPC分类号： H04L69/22 , H04L69/12
摘要： A method for generating network traffic includes receiving packet header information and an optional packet payload. The received packet header information is arranged in accordance with a predetermined format. A packet of data including the packet payload and a packet header is formatted in accordance with the arranged header information. The predetermined format specifies a particular order in which packet headers are to be arranged.
摘要翻译：用于生成网络流量的方法包括接收分组报头信息和可选分组有效载荷。接收的分组报头信息根据预定的格式进行排列。包括分组有效载荷和分组报头的数据分组根据排列的报头信息进行格式化。预定格式指定要排列分组报头的特定顺序。

9. 发明申请

US20110031551A1 Structure and Method For Forming Laterally Extending Dielectric Layer in a Trench-Gate FET 有权
标题翻译：在沟槽栅FET中形成横向延伸介质层的结构和方法
公开(公告)号：US20110031551A1
公开(公告)日：2011-02-10
申请号：US12907805
申请日：2010-10-19
申请人： John Tracey Andrews
发明人： John Tracey Andrews
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/66734 , H01L29/407 , H01L29/42368 , H01L2924/0002 , H01L2924/00
摘要： A FET is formed as follows. A trench is formed in a silicon region. A shield electrode is formed in a bottom portion of the trench. The shield electrode is insulated from adjacent silicon region by a shield dielectric. A silicon nitride layer is formed over a surface of the silicon region adjacent the trench, along the trench sidewalls, and over the shield electrode and shield dielectric. A layer of LTO is formed over the silicon nitride layer such that those portions of the LTO layer extending over the surface of the silicon region adjacent the trench are thicker than the portion of the LTO layer extending over the shield electrode. The LTO layer is uniformly etched back such that a portion of the silicon nitride layer becomes exposed while portions of the silicon nitride layer remain covered.
摘要翻译：如下形成FET。在硅区域形成沟槽。屏蔽电极形成在沟槽的底部。屏蔽电极通过屏蔽电介质与相邻硅区绝缘。氮化硅层形成在与沟槽相邻的硅区域的表面上，沿着沟槽侧壁，以及屏蔽电极和屏蔽电介质之上。在氮化硅层上形成一层LTO，使得在与沟槽相邻的硅区域的表面上延伸的LTO层的那些部分比在屏蔽电极上延伸的LTO层的部分更厚。 LTO层被均匀地回蚀，使得氮化硅层的一部分暴露，同时氮化硅层的一部分保持被覆盖。

10. 发明授权

US07855115B2 Method for forming laterally extending dielectric layer in a trench-gate FET 有权
标题翻译：在沟槽栅FET中形成横向延伸电介质层的方法
公开(公告)号：US07855115B2
公开(公告)日：2010-12-21
申请号：US12576120
申请日：2009-10-08
申请人： John Tracey Andrews
发明人： John Tracey Andrews
IPC分类号： H01L21/336
CPC分类号： H01L29/66734 , H01L29/407 , H01L29/42368 , H01L2924/0002 , H01L2924/00
摘要： A field effect transistor (FET) is formed as follows. A trench is formed in a silicon region. An oxidation barrier layer is formed over a surface of the silicon region adjacent the trench and along the trench sidewalls and bottom. A protective layer is formed over the oxidation barrier layer inside and outside the trench. The protective layer is partially removed such that a portion of the oxidation barrier layer extending at least along the trench bottom becomes exposed and portions of the oxidation barrier layer extending over the surface of the silicon region adjacent the trench remain covered by remaining portions of the protective layer.
摘要翻译：场效应晶体管（FET）如下形成。在硅区域形成沟槽。在邻近沟槽的硅区域的表面上并且沿着沟槽侧壁和底部形成氧化阻挡层。在沟槽内部和外部的氧化阻挡层上形成保护层。保护层被部分去除，使得至少沿着沟槽底部延伸的部分氧化阻挡层变得暴露，并且在靠近沟槽的硅区域的表面上延伸的氧化阻挡层的部分保持被保护层的剩余部分覆盖层。

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