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1. 发明授权

US09153475B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09153475B2
公开(公告)日：2015-10-06
申请号：US13599775
申请日：2012-08-30
申请人： Woo Duck Jung , Sung Soon Kim , Ju Il Song
发明人： Woo Duck Jung , Sung Soon Kim , Ju Il Song
IPC分类号： H01L21/764 , H01L27/115
CPC分类号： H01L21/764 , H01L27/11534
摘要： A semiconductor device includes a semiconductor substrate having a plurality of isolation regions, a plurality of trenches, where each of the plurality of trenches is formed in a corresponding isolation region, of the plurality of isolation regions, and where the plurality of trenches are arranged, in parallel, along a first direction, a plurality of gate lines formed on the semiconductor substrate in a second direction crossing the plurality of trenches, an insulating layer formed between each of the plurality of gate lines, a first air gap formed in at least one of the plurality of trenches, the first air gap extending in the first direction, and a second air gap formed in at least one of the insulating layers, the second air gap extending in the second direction.
摘要翻译：半导体器件包括具有多个隔离区域的多个沟槽的多个沟槽中的多个沟槽中的每一个在相应的隔离区域中的多个隔离区域中的多个沟槽，并且其中布置多个沟槽的半导体衬底，沿着第一方向并联地形成在与所述多个沟槽交叉的第二方向上的所述半导体衬底上的多个栅极线，在所述多个栅极线中的每一个之间形成的绝缘层，形成在至少一个栅极线中的第一气隙所述第一气隙沿所述第一方向延伸，所述第一空气间隙形成在所述绝缘层中的至少一个中，所述第二气隙沿所述第二方向延伸。

2. 发明申请

US20130277730A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130277730A1
公开(公告)日：2013-10-24
申请号：US13599775
申请日：2012-08-30
申请人： Woo Duck Jung , Sung Soon Kim , Ju Il Song
发明人： Woo Duck Jung , Sung Soon Kim , Ju Il Song
IPC分类号： H01L29/788 , H01L29/06 , H01L21/762
CPC分类号： H01L21/764 , H01L27/11534
摘要： A semiconductor device includes a semiconductor substrate having a plurality of isolation regions, a plurality of trenches, where each of the plurality of trenches is formed in a corresponding isolation region, of the plurality of isolation regions, and where the plurality of trenches are arranged, in parallel, along a first direction, a plurality of gate lines formed on the semiconductor substrate in a second direction crossing the plurality of trenches, an insulating layer formed between each of the plurality of gate lines, a first air gap formed in at least one of the plurality of trenches, the first air gap extending in the first direction, and a second air gap formed in at least one of the insulating layers, the second air gap extending in the second direction.
摘要翻译：半导体器件包括具有多个隔离区域的多个沟槽的多个沟槽中的多个沟槽中的每一个在相应的隔离区域中的多个隔离区域中的多个沟槽，并且其中布置多个沟槽的半导体衬底，沿着第一方向并联地形成在与所述多个沟槽交叉的第二方向上的所述半导体衬底上的多个栅极线，在所述多个栅极线中的每一个之间形成的绝缘层，形成在至少一个栅极线中的第一气隙所述第一气隙沿所述第一方向延伸，所述第一空气间隙形成在所述绝缘层中的至少一个中，所述第二气隙沿所述第二方向延伸。

3. 发明申请

US20090127622A1 TRANSPARENT THIN-FILM TRANSISTOR AND MANUFACTURING METHOD OF THE TRANSISTOR 审中-公开
标题翻译：透明薄膜晶体管和晶体管的制造方法
公开(公告)号：US20090127622A1
公开(公告)日：2009-05-21
申请号：US12271844
申请日：2008-11-15
申请人： Ju-Il Song
发明人： Ju-Il Song
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869
摘要： A transparent thin-film transistor and a method of manufacturing the same includes a substrate composed of a transparent material, and a gate electrode, a gate dielectric layer, an activation layer, and source and drain electrodes, at least one of each being composed of an amorphous oxide material.
摘要翻译：透明薄膜晶体管及其制造方法包括由透明材料构成的基板，栅极电极，栅极电介质层，活化层以及源极和漏极，其中至少一个由无定形氧化物材料。

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