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    • 2. 发明授权
    • Apparatus and method for controlling dual display using RGB interface in mobile terminal with projector module
    • 用投影仪模块在移动终端中使用RGB接口控制双显示的装置和方法
    • US08624796B2
    • 2014-01-07
    • US12832543
    • 2010-07-08
    • Byeong-Hoon ParkSung-Soon Kim
    • Byeong-Hoon ParkSung-Soon Kim
    • G09G5/00G09G5/36
    • G06F3/1423G06F3/1454G09G5/003G09G5/393G09G5/395
    • A method and apparatus is provided for controlling a dual display using a Red, Green and Blue (RGB) interface in a mobile terminal with a projector module, in which the projector module expends a high-resolution image and projects the expended image to the outside, a display displays a menu image for operation of the projector module, an image processor has a first buffer assigned to the display for data transmission to the display, and a second buffer assigned to the projector module for data transmission to the projector module, and a controller transmits image data to the first and second buffers, and outputs control signals for activating both or a selected one of the first and second buffers, depending on selection of a display mode.
    • 提供了一种用于在具有投影仪模块的移动终端中使用红色,绿色和蓝色(RGB)接口来控制双显示的方法和装置,其中投影仪模块花费高分辨率图像并将消耗的图像投射到外部 显示器显示用于投影仪模块的操作的菜单图像,图像处理器具有分配给用于显示器的数据传输的显示器的第一缓冲器和分配给投影仪模块的用于数据传输到投影仪模块的第二缓冲器,以及 控制器将图像数据发送到第一和第二缓冲器,并且根据显示模式的选择,输出用于激活第一和第二缓冲器中的两个或所选择的一个的控制信号。
    • 5. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US09153475B2
    • 2015-10-06
    • US13599775
    • 2012-08-30
    • Woo Duck JungSung Soon KimJu Il Song
    • Woo Duck JungSung Soon KimJu Il Song
    • H01L21/764H01L27/115
    • H01L21/764H01L27/11534
    • A semiconductor device includes a semiconductor substrate having a plurality of isolation regions, a plurality of trenches, where each of the plurality of trenches is formed in a corresponding isolation region, of the plurality of isolation regions, and where the plurality of trenches are arranged, in parallel, along a first direction, a plurality of gate lines formed on the semiconductor substrate in a second direction crossing the plurality of trenches, an insulating layer formed between each of the plurality of gate lines, a first air gap formed in at least one of the plurality of trenches, the first air gap extending in the first direction, and a second air gap formed in at least one of the insulating layers, the second air gap extending in the second direction.
    • 半导体器件包括具有多个隔离区域的多个沟槽的多个沟槽中的多个沟槽中的每一个在相应的隔离区域中的多个隔离区域中的多个沟槽,并且其中布置多个沟槽的半导体衬底, 沿着第一方向并联地形成在与所述多个沟槽交叉的第二方向上的所述半导体衬底上的多个栅极线,在所述多个栅极线中的每一个之间形成的绝缘层,形成在至少一个栅极线中的第一气隙 所述第一气隙沿所述第一方向延伸,所述第一空气间隙形成在所述绝缘层中的至少一个中,所述第二气隙沿所述第二方向延伸。
    • 6. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20130277730A1
    • 2013-10-24
    • US13599775
    • 2012-08-30
    • Woo Duck JungSung Soon KimJu Il Song
    • Woo Duck JungSung Soon KimJu Il Song
    • H01L29/788H01L29/06H01L21/762
    • H01L21/764H01L27/11534
    • A semiconductor device includes a semiconductor substrate having a plurality of isolation regions, a plurality of trenches, where each of the plurality of trenches is formed in a corresponding isolation region, of the plurality of isolation regions, and where the plurality of trenches are arranged, in parallel, along a first direction, a plurality of gate lines formed on the semiconductor substrate in a second direction crossing the plurality of trenches, an insulating layer formed between each of the plurality of gate lines, a first air gap formed in at least one of the plurality of trenches, the first air gap extending in the first direction, and a second air gap formed in at least one of the insulating layers, the second air gap extending in the second direction.
    • 半导体器件包括具有多个隔离区域的多个沟槽的多个沟槽中的多个沟槽中的每一个在相应的隔离区域中的多个隔离区域中的多个沟槽,并且其中布置多个沟槽的半导体衬底, 沿着第一方向并联地形成在与所述多个沟槽交叉的第二方向上的所述半导体衬底上的多个栅极线,在所述多个栅极线中的每一个之间形成的绝缘层,形成在至少一个栅极线中的第一气隙 所述第一气隙沿所述第一方向延伸,所述第一空气间隙形成在所述绝缘层中的至少一个中,所述第二气隙沿所述第二方向延伸。