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1. 发明授权

US07688659B2 Semiconductor memory capable of testing a failure before programming a fuse circuit and method thereof 失效
标题翻译：在对熔丝电路编程之前能够测试故障的半导体存储器及其方法
公开(公告)号：US07688659B2
公开(公告)日：2010-03-30
申请号：US12127161
申请日：2008-05-27
申请人： Kaoru Mori , Jun Ohno , Hiroyuki Kobayashi
发明人： Kaoru Mori , Jun Ohno , Hiroyuki Kobayashi
IPC分类号： G11C29/00
CPC分类号： G11C29/26 , G11C7/1045 , G11C11/401 , G11C29/02 , G11C29/025 , G11C2029/5006 , G11C2029/5602
摘要： Each program circuit outputs an operating specification signal indicating a first or second operating specification according to a program state. Each specification changing circuit is set by a corresponding block selection signal and outputs an operating specification signal indicating a second operating specification. Each timing control circuit changes an output timing of a precharge control signal for a bit line according to the operating specification signal. By the operating specification signal from the specification changing circuit, a failure can be detected in each memory block before programming a program circuit. Thereafter, the failure can be relieved by the program circuit. The output timing of the precharge control signal can be set for each memory block by a block selection signal without wiring a dedicated signal line for setting each specification changing circuit. Accordingly, increase in chip size can be minimized.
摘要翻译：每个程序电路根据程序状态输出指示第一或第二操作规范的操作规范信号。每个规格改变电路由相应的块选择信号设置，并输出指示第二操作规范的操作指定信号。每个定时控制电路根据操作指定信号改变位线的预充电控制信号的输出定时。通过来自规范改变电路的操作规范信号，在对程序电路进行编程之前可以在每个存储器块中检测到故障。此后，程序电路可以解除故障。可以通过块选择信号为每个存储器块设置预充电控制信号的输出定时，而不布线用于设置每个规格改变电路的专用信号线。因此，可以使芯片尺寸的增加最小化。

2. 发明申请

US20070268766A1 Semiconductor memory and refresh cycle control method 有权
标题翻译：半导体存储器和刷新周期控制方法
公开(公告)号：US20070268766A1
公开(公告)日：2007-11-22
申请号：US11797817
申请日：2007-05-08
申请人： Kaoru Mori
发明人： Kaoru Mori
IPC分类号： G11C11/34 , G11C7/04 , G11C7/00
CPC分类号： G11C11/406 , G11C7/04 , G11C11/401 , G11C11/40626 , G11C29/02 , G11C29/028 , G11C2029/0409 , G11C2029/5002 , G11C2211/4061 , G11C2211/4067
摘要： A semiconductor memory and a refresh cycle control method that reduce a standby current by properly changing a refresh cycle according to the temperature of the semiconductor memory. A temperature detection section detects the temperature of the semiconductor memory. A cycle change control section sends a cycle change signal for changing a refresh cycle when the temperature of the semiconductor memory reaches a predetermined cycle change temperature. A refresh timing signal generation section generates a refresh timing signal and changes the cycle of the refresh timing signal in response to the cycle change signal. A constant current generation circuit generates an electric current for generating the refresh timing signal. A low-temperature constant current setting circuit designates the level of the electric current generated in the case that the temperature of the semiconductor memory is lower than or equal to the cycle change temperature. A high-temperature constant current setting circuit designates the level of the electric current generated in the case that the temperature of the semiconductor memory is higher than the cycle change temperature.
摘要翻译：一种半导体存储器和刷新周期控制方法，通过根据半导体存储器的温度适当地改变刷新周期来减少待机电流。温度检测部检测半导体存储器的温度。当半导体存储器的温度达到预定的周期变化温度时，循环变化控制部分发送用于改变刷新周期的循环改变信号。刷新定时信号生成部生成刷新定时信号，根据周期变更信号改变刷新定时信号的周期。恒流产生电路产生用于产生刷新定时信号的电流。低温恒流设定电路表示在半导体存储器的温度低于或等于循环变化温度的情况下产生的电流的电平。高温恒流设定电路表示在半导体存储器的温度高于循环变化温度的情况下产生的电流的电平。

3. 发明申请

US20060038213A1 Magnetic memory adopting synthetic antiferromagnet as free magnetic layer 有权
标题翻译：磁记忆采用合成反铁磁体作为自由磁性层
公开(公告)号：US20060038213A1
公开(公告)日：2006-02-23
申请号：US11208370
申请日：2005-08-19
申请人： Kaoru Mori , Tetsuhiro Suzuki , Yoshiyuki Fukumoto , Sadahiko Miura
发明人： Kaoru Mori , Tetsuhiro Suzuki , Yoshiyuki Fukumoto , Sadahiko Miura
IPC分类号： H01L29/94
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.
摘要翻译：磁存储器包括：包括自由磁性层的磁阻元件; 第一互连件，其在第一方向上倾斜于所述自由磁性层的容易轴线延伸; 沿与第一方向大致正交的第二方向延伸的第二互连; 以及写入电路，通过在所述第一互连上形成第一写入电流将数据写入所述自由磁性层，然后在所述第二互连上开启第二写入电流，所述第一写入电流导通。自由磁性层包括：第一至第N铁磁层和N等于或大于4的第一至第（N-1）个非磁性层，第i个非磁性层设置在i 和第（i + 1）个铁磁层，其中i为等于或小于N-1的任意自然数。自由磁性层被设计成使得第j和第（j + 1）个铁磁层之间的反铁磁耦合比第一和第二铁磁层之间的反铁磁耦合更强，j是从2到N的整数中的任何一个 -2。

4. 发明授权

US06791354B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US06791354B2
公开(公告)日：2004-09-14
申请号：US10032465
申请日：2002-01-02
申请人： Kaoru Mori , Shinichi Yamada , Masato Takita
发明人： Kaoru Mori , Shinichi Yamada , Masato Takita
IPC分类号： G06F738
CPC分类号： G11C11/4076 , G11C5/143 , G11C5/147 , G11C11/4074 , G11C2207/002 , G11C2207/2227
摘要： A plurality of switching transistors is provided, each connects power supply terminals of a plurality of first circuit blocks to a power supply line, respectively. Among the first circuit blocks, the power supply terminals of the first circuit blocks operating at different timings are connected by an internal power supply line. A power supply control circuit simultaneously turns on the switching transistors connected to the internal power supply line, in response to operation(s) of at least any one of the first circuit blocks connected to the internal power supply line. Since the switching transistors can be shared among the first circuit blocks not operating simultaneously, operation speed of the first circuit blocks can be increased. Since a total size of the switching transistors can be made small, standby current can be decreased. Accordingly, a semiconductor integrated circuit operating at a high speed can be constituted without increasing the standby current.
摘要翻译：提供多个开关晶体管，每个将多个第一电路块的电源端分别连接到电源线。在第一电路块中，在不同定时工作的第一电路的电源端子通过内部电源线连接。响应于连接到内部电源线的至少任一个第一电路块的操作，电源控制电路同时接通连接到内部电源线的开关晶体管。由于开关晶体管可以在不同时操作的第一电路块之间共享，所以可以增加第一电路块的操作速度。由于可以使开关晶体管的总体尺寸小，所以可以降低待机电流。因此，可以在不增加待机电流的情况下构成高速工作的半导体集成电路。

5. 发明授权

US06707730B2 Semiconductor memory device with efficient and reliable redundancy processing 有权
标题翻译：半导体存储器件具有高效可靠的冗余处理
公开(公告)号：US06707730B2
公开(公告)日：2004-03-16
申请号：US10066603
申请日：2002-02-06
申请人： Kaoru Mori , Masato Matsumiya
发明人： Kaoru Mori , Masato Matsumiya
IPC分类号： G11C700
CPC分类号： G11C29/808 , G11C29/816
摘要： A semiconductor memory device includes a data buffer for inputting/outputting data from/to an exterior of the device, a plurality of DRAM cell array blocks, an SRAM redundancy cell which is situated around each of the plurality of DRAM cell array blocks, a fuse circuit which stores therein an address of a defect memory cell in the DRAM cell array blocks, a comparison circuit which compares an input address with the address stored in the fuse circuit, and an I/O bus which couple the SRAM redundancy cell to the data buffer in response to an address match found by the comparison circuit.
摘要翻译：半导体存储器件包括用于从设备的外部输入/输出数据的数据缓冲器，多个DRAM单元阵列块，位于多个DRAM单元阵列块的每一个周围的SRAM冗余单元，保险丝存储DRAM单元阵列中的缺陷存储单元的地址的电路，将输入地址与存储在熔丝电路中的地址进行比较的比较电路和将SRAM冗余单元耦合到数据的I / O总线响应于由比较电路找到的地址匹配的缓冲器。

6. 发明授权

US06628564B1 Semiconductor memory device capable of driving non-selected word lines to first and second potentials 有权
标题翻译：能够将未选择的字线驱动到第一和第二电位的半导体存储器件
公开(公告)号：US06628564B1
公开(公告)日：2003-09-30
申请号：US09339855
申请日：1999-06-25
申请人： Masato Takita , Masato Matsumiya , Satoshi Eto , Toshikazu Nakamura , Masatomo Hasegawa , Ayako Kitamoto , Kuninori Kawabata , Hideki Kanou , Toru Koga , Yuki Ishii , Shinichi Yamada , Kaoru Mori
发明人： Masato Takita , Masato Matsumiya , Satoshi Eto , Toshikazu Nakamura , Masatomo Hasegawa , Ayako Kitamoto , Kuninori Kawabata , Hideki Kanou , Toru Koga , Yuki Ishii , Shinichi Yamada , Kaoru Mori
IPC分类号： G11C808
CPC分类号： G11C5/147 , G11C8/08 , G11C8/12 , G11C11/4074 , G11C11/4085 , G11C2207/2227
摘要： A semiconductor device includes a word line drive circuit resetting the word line by driving the word line connected to a memory cell and switching a reset level of the word line drive circuit at the time of the reset operation of the word line. Further, a semiconductor device includes a memory cell array formed by arranging a plurality of memory cells and a reset level switch circuit for selecting a first potential or a second potential and supplying the first potential or the second potential to the word line drive circuit.
摘要翻译：半导体器件包括字线驱动电路，通过驱动连接到存储单元的字线并在字线的复位操作时切换字线驱动电路的复位电平来重置字线。此外，半导体器件包括通过布置多个存储单元形成的存储单元阵列和用于选择第一电位或第二电位的复位电平开关电路，并将第一电位或第二电位提供给字线驱动电路。

7. 发明授权

US06614266B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US06614266B2
公开(公告)日：2003-09-02
申请号：US10006649
申请日：2001-12-10
申请人： Yuki Ishii , Kaoru Mori
发明人： Yuki Ishii , Kaoru Mori
IPC分类号： H03K19096
CPC分类号： G11C7/106 , G11C7/065 , G11C7/1051 , G11C11/4091 , G11C2207/2227 , H03K19/0016
摘要： A semiconductor integrated circuit having an active mode and a standby mode includes a node at which an internal circuit is connected to a latch circuit, the latch circuit storing a data signal output from the internal circuit. A level determination unit determines a logic level of the node in response to a control signal indicating the standby mode.
摘要翻译：具有活动模式和待机模式的半导体集成电路包括内部电路连接到锁存电路的节点，所述锁存电路存储从内部电路输出的数据信号。电平确定单元响应于指示待机模式的控制信号来确定节点的逻辑电平。

8. 发明授权

US5510317A N-acyl-N-phenylmaleamic acid derivatives, methods of producing same, and herbicides containing same as effective components 失效
标题翻译： N-酰基-N-苯基马来酰胺酸衍生物，其制备方法，以及含有与有效成分相同的除草剂
公开(公告)号：US5510317A
公开(公告)日：1996-04-23
申请号：US256683
申请日：1994-07-20
申请人： Tetsuo Takematsu , Takashi Kume , Takeo Komata , Kiyoshi Suzuki , Yukio Ikeda , Matsue Kawamura , Kaoru Mori
发明人： Tetsuo Takematsu , Takashi Kume , Takeo Komata , Kiyoshi Suzuki , Yukio Ikeda , Matsue Kawamura , Kaoru Mori
IPC分类号： A01N37/30 , C07C231/08 , C07C231/10 , C07C231/12 , C07C233/91 , C07C233/92 , C07C235/88 , A01N27/00 , A01N29/04 , A01N29/10 , C07C229/36
CPC分类号： C07C233/92 , A01N37/30 , C07C233/91
摘要： The invention provides N-acyl-N-phenylmaleamic acid derivatives represented by the general formula I!, a method of producing the same, and a herbicide containing the same as the effective components, ##STR1## wherein X and Y each individually represent hydrogen atoms or halogen atoms, R.sup.1 represents a hydrogen atom, a halogen atom, a lower alkyl group, a lower alkenyl group, a lower alkynyl group, a lower alkoxyalkyl group or a lower alkoxycarbonylalkyl group, R.sup.2 represents a lower alkyl group, a halogenated lower alkyl group or a substituted or unsubstituted phenyl group, R.sup.3 represents a hydrogen atom or a lower alkyl group, and R.sup.4 represents a hydroxyl, a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, a lower alkoxyalkoxy group, a benzyloxy group or a lower alkoxycarbonylalkoxy group. This herbicide which is very useful can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc., and is not harmful to crops.
摘要翻译： PCT No.PCT / JP93 / 01755 Sec。 371日期：1994年7月20日 102（e）日期1994年7月20日PCT 1993年12月2日PCT公布。 WO94 / 12468 PCT出版物日期：1994年6月9日本发明提供由通式[I]表示的N-酰基-N-苯基马来酰胺酸衍生物，其制备方法和含有与有效成分相同的除草剂， I]其中X和Y各自独立地表示氢原子或卤原子，R1表示氢原子，卤素原子，低级烷基，低级烯基，低级炔基，低级烷氧基烷基或低级烷氧基羰基烷基， R2表示低级烷基，卤代低级烷基或取代或未取代的苯基，R3表示氢原子或低级烷基，R4表示羟基，低级烷氧基，低级链烯氧基，低级炔氧基低级烷氧基烷氧基，苄氧基或低级烷氧羰基烷氧基。这种非常有用的除草剂可广泛应用于旱地，水田，果园，草坪，森林，非作物地等，对作物无害。

9. 发明授权

US4749407A N-propargyl-N-(2-trifluoromethylbenzoyl)-3-substituted benzenesulfonamide and selective herbicide containing the same as an active ingredient 失效
标题翻译： N-炔丙基-N-（2-三氟甲基苯甲酰基）-3-取代苯磺酰胺和含有其作为活性成分的选择性除草剂
公开(公告)号：US4749407A
公开(公告)日：1988-06-07
申请号：US877380
申请日：1986-06-23
申请人： Daiei Tunemoto , Hideko Sakai , Kiyosi Kondo , Kaoru Mori , Masahiro Watanabe , Takeo Komata , Kenji Motojima
发明人： Daiei Tunemoto , Hideko Sakai , Kiyosi Kondo , Kaoru Mori , Masahiro Watanabe , Takeo Komata , Kenji Motojima
IPC分类号： A01N41/06 , C07C67/00 , C07C301/00 , C07C311/51 , A01N9/16 , C07C143/78
CPC分类号： A01N41/06
摘要： There are disclosed an N-propargyl-N-(2-trifluoromethylbenzoyl)-3-substituted benzenesulfonamide represented by the general formula: ##STR1## wherein R.sup.1 represents a halogen atom, a lower alkyl group, a lower alkoxy group, a perfluoro-lower alkyl group having 1 to 4 carbon atoms, a nitro group, a cyano group, a carboxyl group or a lower alkoxycarbonyl group; and R.sup.2 represents a hydrogen atom, a halogen atom, a lower alkyl group, a perfluoro-lower alkyl group having 1 to 4 carbon atoms, a lower alkoxy group, a nitro group, a cyano group, a carboxyl group or a lower alkoxycarbonyl group, and a selective herbicide containing the same as an active ingredient.
摘要翻译：公开了由以下通式表示的N-炔丙基-N-（2-三氟甲基苯甲酰基）-3-取代的苯磺酰胺：其中R 1表示卤素原子，低级烷基，低级烷氧基，全氟低级具有1至4个碳原子的烷基，硝基，氰基，羧基或低级烷氧基羰基; R 2表示氢原子，卤素原子，低级烷基，碳原子数1〜4的全氟低级烷基，低级烷氧基，硝基，氰基，羧基或低级烷氧基羰基，以及含有与活性成分相同的选择性除草剂。

10. 发明授权

US4170582A Process for preparing a polymer resin aqueous dispersion 失效
标题翻译：聚合物树脂水分散体的制备方法
公开(公告)号：US4170582A
公开(公告)日：1979-10-09
申请号：US819933
申请日：1977-07-28
申请人： Kaoru Mori , Hiro Tanaka , Hirosi Ozawa , Yoichi Murakami
发明人： Kaoru Mori , Hiro Tanaka , Hirosi Ozawa , Yoichi Murakami
IPC分类号： C08F2/00 , C08F2/20 , C08F2/22 , C08F2/30 , C08F20/00 , C08F20/26 , C08F265/04 , C08F290/00 , C08F299/00 , C09D133/04 , C08L33/06
CPC分类号： C08F265/04 , C08F2/20
摘要： A process for producing a resin dispersion characterized in that an ethylenically unsaturated monomer capable of forming a polymer insoluble in an aqueous medium is polymerized in a solution formed by dissolving in said aqueous medium a water-soluble polymer derived from(1) 10-90% by weight of a hydroxyalkyl (meth-)acrylate expressed by the following general formula ##STR1## wherein R is a hydrogen atom or a methyl group, and l is an integer of 2, 3 or 4,(2) 10-90% by weight of a polyalkyleneglycol mono (meth-)acrylate expressed by the following general formula ##STR2## wherein R is a hydrogen atom or a methyl group, m is an integer of 2 or 3, and n is an integer of 2 to 20, and(3) 0-30% by weight of another ethylenically unsaturated monomer.
摘要翻译：一种树脂分散体的制造方法，其特征在于，能够形成不溶于水性介质的聚合物的烯键式不饱和单体在溶解在所述水性介质中形成的溶液中聚合，所述溶液是由（1）10-90％其中R为氢原子或甲基，l为2,3或4的整数，（2）10-90％的BY（以下称为通式）表示的羟基（甲基）丙烯酸酯其中，R为氢原子或甲基，m为2或3的整数，n为2〜20的整数，以及n为2〜20的整数，以及（A）所示的聚丙烯酰胺单（甲基）丙烯酸酯的重量，（3）0-30％以重量为单位的不饱和单体。

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