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1. 发明授权

US07998871B2 Mask forming and implanting methods using implant stopping layer 有权
标题翻译：使用植入物停止层的掩模形成和植入方法
公开(公告)号：US07998871B2
公开(公告)日：2011-08-16
申请号：US12145915
申请日：2008-06-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

2. 发明申请

US20070275563A1 MASK FORMING AND IMPLANTING METHODS USING IMPLANT STOPPING LAYER AND MASK SO FORMED 失效
标题翻译：使用植入物层和掩模形成的掩模形成和植入方法
公开(公告)号：US20070275563A1
公开(公告)日：2007-11-29
申请号：US11420321
申请日：2006-05-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/266 , H01L21/26513 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

3. 发明申请

US20070015083A1 Antireflective composition and process of making a lithographic structure 有权
标题翻译：抗反射组合物和制备光刻结构的方法
公开(公告)号：US20070015083A1
公开(公告)日：2007-01-18
申请号：US11180788
申请日：2005-07-14
申请人： Katherina Babich , Sean Burns , Elbert Huang , Arpan Mahorowala , Dirk Pfeiffer , Karen Temple
发明人： Katherina Babich , Sean Burns , Elbert Huang , Arpan Mahorowala , Dirk Pfeiffer , Karen Temple
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , Y10T428/31663
摘要： An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Group IIIB to Group VIB, lanthanides, Group IIIA, Group IVA except silicon; and L is an optional ligand. The invention is also directed to a process of making a lithographic structure including a silicon-metal oxide, antireflective material.
摘要翻译：一种抗反射组合物和包含硅 - 金属氧化物，衍生自该组合物的抗反射材料的光刻结构。抗反射组合物包含式I的聚合物，其中1≤x≤2; 1 <= y <= 5; 1> = 0; m> 0; n> 0; R是发色团，M是选自IIIB族至VIB族的镧系元素，镧系元素，IIIA族，IVA族除外; L是任选的配体。本发明还涉及制备包括硅 - 金属氧化物，抗反射材料的光刻结构的方法。

4. 发明授权

US06979518B2 Attenuated embedded phase shift photomask blanks 失效
标题翻译：嵌入式相移光掩模空白
公开(公告)号：US06979518B2
公开(公告)日：2005-12-27
申请号：US10727925
申请日：2003-12-04
申请人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
发明人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
IPC分类号： G03F1/32 , C23C14/06 , C23C14/08 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , C23C14/0676 , C23C14/08
摘要： An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.
摘要翻译：通过由金属，硅，氮和氧制成的光学半透明的膜形成产生透射光的相移的衰减的嵌入式相移光掩模坯料。加入蚀刻停止层以改善相移层的蚀刻选择性。通过该方法获得宽范围的光学透射（0.001nm至15％，157nm）。

5. 发明申请

US20050100682A1 Method for depositing materials on a substrate 审中-公开
标题翻译：在衬底上沉积材料的方法
公开(公告)号：US20050100682A1
公开(公告)日：2005-05-12
申请号：US10702048
申请日：2003-11-06
申请人： Noriaki Fukiage , Katherina Babich
发明人： Noriaki Fukiage , Katherina Babich
IPC分类号： H01L21/027 , H01L21/033 , H05H1/24
CPC分类号： H01L21/0276 , H01L21/0332
摘要： A method and apparatus for depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process, wherein for at least a part of the deposition of the TERA film, the plasma-enhanced chemical vapor deposition process employs a precursor that reduces reaction with a photoresist. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple process and precursor gasses.
摘要翻译：一种用于使用等离子体增强化学气相沉积工艺在衬底上沉积具有可调光学和耐蚀刻特性的TERA膜的方法和装置，其中对于至少一部分沉积TERA膜的等离子体增强化学气相沉积工艺采用减少与光致抗蚀剂反应的前体。所述装置包括具有耦合到第一RF源的上电极和耦合到第二RF源的衬底保持器的腔室; 以及用于提供多种工艺和前体气体的喷头。

6. 发明授权

US06730445B2 Attenuated embedded phase shift photomask blanks 有权
公开(公告)号：US06730445B2
公开(公告)日：2004-05-04
申请号：US10303341
申请日：2002-11-22
申请人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
发明人： Marie Angelopoulos , Katherina Babich , S. Jay Chey , Michael Straight Hibbs , Robert N. Lang , Arpan Pravin Mahorowala , Kenneth Christopher Racette
IPC分类号： G03F900
CPC分类号： G03F1/32 , C23C14/0676 , C23C14/08
摘要： An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

7. 发明授权

US09059000B2 Methods and structures for protecting one area while processing another area on a chip 有权
公开(公告)号：US09059000B2
公开(公告)日：2015-06-16
申请号：US12106586
申请日：2008-04-21
申请人： Deok-kee Kim , Kenneth T. Settlemyer, Jr. , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
发明人： Deok-kee Kim , Kenneth T. Settlemyer, Jr. , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
IPC分类号： H01L21/027 , H01L21/033 , H01L21/311 , G03F7/11
CPC分类号： H01L21/0337 , G03F7/11 , H01L21/027 , H01L21/0332 , H01L21/0334 , H01L21/0338 , H01L21/31144
摘要： Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.

8. 发明申请

US20130224944A1 METHODS FOR FABRICATING INTEGRATED CIRCUITS USING TAILORED CHAMFERED GATE LINER PROFILES 审中-公开
标题翻译：使用定制化的门式衬套轮廓制作集成电路的方法
公开(公告)号：US20130224944A1
公开(公告)日：2013-08-29
申请号：US13405414
申请日：2012-02-27
申请人： Puneet Khanna , Dae-han Choi , Katherina Babich , Catherine Labelle
发明人： Puneet Khanna , Dae-han Choi , Katherina Babich , Catherine Labelle
IPC分类号： H01L21/28
CPC分类号： H01L21/28114 , H01L29/42376 , H01L29/6653 , H01L29/66545 , H01L29/6659
摘要： Methods for fabricating integrated circuits using tailored chamfered gate liner profiles are provided. In an exemplary embodiment, a method for fabricating an integrated circuit includes forming a dummy gate electrode overlying a semiconductor substrate and forming a liner on sidewalls of the dummy gate electrode. A dielectric material is deposited overlying the dummy gate electrode, the liner, and the substrate. The dummy gate electrode is exposed by chemical mechanical planarization. A portion of the dummy gate electrode is removed and the liner is isotropically etched such that it has a chamfered surface. A remainder of the dummy gate electrode is removed to form an opening that is filled with a metal.
摘要翻译：提供了使用定制的倒角门衬垫轮廓制造集成电路的方法。在一个示例性实施例中，一种用于制造集成电路的方法包括形成覆盖在半导体衬底上的伪栅电极，并在虚拟栅电极的侧壁上形成衬垫。沉积在伪栅电极，衬垫和衬底上的电介质材料。虚拟栅电极通过化学机械平面化曝光。去除虚拟栅电极的一部分，并且将衬垫各向同性地蚀刻，使其具有倒角表面。去除虚拟栅电极的其余部分以形成填充有金属的开口。

9. 发明申请

US20080286545A1 MASK HAVING IMPLANT STOPPING LAYER 审中-公开
标题翻译：掩蔽具有植入物停留层
公开(公告)号：US20080286545A1
公开(公告)日：2008-11-20
申请号：US12145922
申请日：2008-06-25
申请人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
发明人： Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
IPC分类号： B32B7/02
CPC分类号： H01L21/26513 , H01L21/266 , Y10T428/24992
摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.
摘要翻译：形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

10. 发明申请

US20080093640A1 METHOD FOR TUNING EPITAXIAL GROWTH BY INTERFACIAL DOPING AND STRUCTURE INCLUDING SAME 审中-公开
标题翻译：用于通过界面渗透和包括其中的结构调谐外延生长的方法
公开(公告)号：US20080093640A1
公开(公告)日：2008-04-24
申请号：US11957775
申请日：2007-12-17
申请人： Katherina Babich , Bruce Doris , David Medeiros , Devendra Sadana
发明人： Katherina Babich , Bruce Doris , David Medeiros , Devendra Sadana
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L21/2236 , H01L21/2256 , H01L21/26513 , H01L21/823418 , H01L21/823814 , H01L29/66628 , H01L29/7834
摘要： A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of this scheme into the process integration flow for integrated circuitry are provided. The method of the present invention can by used for the selective or nonselective epitaxial growth of semiconductor material from the dissimilar surfaces. More specifically, the invention comprises a method for counterdoping of n-FET and/or p-FET regions of silicon circuitry during the halo and/or extension implantation process utilizing a technique by which the surface characteristics of the two regions are made similar with respect to their response to wet or dry surface preparation and which renders the two previously dissimilar surfaces amenable to simultaneous epitaxial growth of raised source/drain structures; but not otherwise affecting the electrical performance of the resulting device.
摘要翻译：允许通过新颖的表面制备方案不使衬底变薄的不同掺杂的半导体表面（n型和p型）上的半导体材料均匀地同时外延生长的方法，以及由提供了将该方案实现为集成电路的过程集成流程。本发明的方法可以用于从不同的表面进行半导体材料的选择性或非选择性外延生长。更具体地说，本发明包括一种在卤素和/或延伸注入过程期间用于对硅电路的n-FET和/或p-FET区进行反掺杂的方法，利用这样的技术，使两个区域的表面特性相对于它们对湿表面或干表面制备的反应，并且使得两个先前不同的表面可以容易地升高的源极/漏极结构的同时外延生长; 但不会影响所得设备的电气性能。

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