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1. 发明授权

US07829465B2 Method for plasma etching of positively sloped structures 有权
标题翻译：正倾斜结构的等离子体蚀刻方法
公开(公告)号：US07829465B2
公开(公告)日：2010-11-09
申请号：US11834127
申请日：2007-08-06
申请人： Shouliang Lai , Ken Mackenzie , David Johnson
发明人： Shouliang Lai , Ken Mackenzie , David Johnson
IPC分类号： H01L21/301 , H01L21/461
CPC分类号： B81C1/00626 , B81C2201/0132 , H01L21/30655
摘要： The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.
摘要翻译：本发明提供一种蚀刻衬底中的特征的方法。该方法包括以下步骤：将基板放置在真空室中的基板支撑件上。在基板上进行交替重复的处理，直到实现预定的沟槽深度和预定的侧壁角。该方法的一部分是沉积步骤，其通过将至少一种含聚合物的气体引入真空室来进行。等离子体从含聚合物的气体点燃，然后将其用于在基底上沉积聚合物。交替重复工艺的另一部分是蚀刻步骤，其通过将含蚀刻剂的气体，含有气体的聚合物和含有气体的清除剂引入真空室来进行。等离子体从含蚀刻剂的气体中点燃，含聚合物的气体和含有清除剂的气体，然后用于蚀刻衬底。

2. 发明申请

US20080061029A1 Method for Plasma Etching of Positively Sloped Structures 有权
标题翻译：积极斜坡结构等离子体蚀刻方法
公开(公告)号：US20080061029A1
公开(公告)日：2008-03-13
申请号：US11834127
申请日：2007-08-06
申请人： Shouliang Lai , Ken Mackenzie , David Johnson
发明人： Shouliang Lai , Ken Mackenzie , David Johnson
IPC分类号： B44C1/22
CPC分类号： B81C1/00626 , B81C2201/0132 , H01L21/30655
摘要： The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.
摘要翻译：本发明提供一种蚀刻衬底中的特征的方法。该方法包括以下步骤：将基板放置在真空室中的基板支撑件上。在基板上进行交替重复的处理，直到实现预定的沟槽深度和预定的侧壁角。该方法的一部分是沉积步骤，其通过将至少一种含聚合物的气体引入真空室来进行。等离子体从含聚合物的气体点燃，然后将其用于在基底上沉积聚合物。交替重复工艺的另一部分是蚀刻步骤，其通过将含蚀刻剂的气体，含有气体的聚合物和含有气体的清除剂引入真空室来进行。等离子体从含蚀刻剂的气体中点燃，含聚合物的气体和含有清除剂的气体，然后用于蚀刻衬底。

3. 发明申请

US20100012811A1 Adjustable leg 审中-公开
标题翻译：可调腿
公开(公告)号：US20100012811A1
公开(公告)日：2010-01-21
申请号：US12459902
申请日：2009-07-09
申请人： Ken MacKenzie , Ronald J. Pulvermacher
发明人： Ken MacKenzie , Ronald J. Pulvermacher
IPC分类号： A47B91/00 , F16M13/00
CPC分类号： F16B7/105 , F16B7/182
摘要： An adjustable leg includes a foot assembly, a leg assembly, a tube assembly and a rod assembly. The foot assembly is coupled to the leg assembly. The rod assembly is rotatably coupled to the tube assembly. The rod assembly is threaded through an aperture in the leg assembly and the tube assembly. The rotation of the rod assembly adjusts the overall length of the adjustable leg. Engagement of the leg assembly with the inside of the tube assembly prevents the rotation of the tube assembly when the rod assembly is rotated.
摘要翻译：可调腿包括脚组件，腿组件，管组件和杆组件。脚组件联接到腿组件。杆组件可旋转地联接到管组件。杆组件穿过腿组件和管组件中的孔。杆组件的旋转调节可调节腿的总长度。腿组件与管组件的内部接合防止当杆组件旋转时管组件的旋转。

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