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1. 发明授权

US07829465B2 Method for plasma etching of positively sloped structures 有权
标题翻译：正倾斜结构的等离子体蚀刻方法
公开(公告)号：US07829465B2
公开(公告)日：2010-11-09
申请号：US11834127
申请日：2007-08-06
申请人： Shouliang Lai , Ken Mackenzie , David Johnson
发明人： Shouliang Lai , Ken Mackenzie , David Johnson
IPC分类号： H01L21/301 , H01L21/461
CPC分类号： B81C1/00626 , B81C2201/0132 , H01L21/30655
摘要： The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.
摘要翻译：本发明提供一种蚀刻衬底中的特征的方法。该方法包括以下步骤：将基板放置在真空室中的基板支撑件上。在基板上进行交替重复的处理，直到实现预定的沟槽深度和预定的侧壁角。该方法的一部分是沉积步骤，其通过将至少一种含聚合物的气体引入真空室来进行。等离子体从含聚合物的气体点燃，然后将其用于在基底上沉积聚合物。交替重复工艺的另一部分是蚀刻步骤，其通过将含蚀刻剂的气体，含有气体的聚合物和含有气体的清除剂引入真空室来进行。等离子体从含蚀刻剂的气体中点燃，含聚合物的气体和含有清除剂的气体，然后用于蚀刻衬底。

2. 发明申请

US20080061029A1 Method for Plasma Etching of Positively Sloped Structures 有权
标题翻译：积极斜坡结构等离子体蚀刻方法
公开(公告)号：US20080061029A1
公开(公告)日：2008-03-13
申请号：US11834127
申请日：2007-08-06
申请人： Shouliang Lai , Ken Mackenzie , David Johnson
发明人： Shouliang Lai , Ken Mackenzie , David Johnson
IPC分类号： B44C1/22
CPC分类号： B81C1/00626 , B81C2201/0132 , H01L21/30655
摘要： The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.
摘要翻译：本发明提供一种蚀刻衬底中的特征的方法。该方法包括以下步骤：将基板放置在真空室中的基板支撑件上。在基板上进行交替重复的处理，直到实现预定的沟槽深度和预定的侧壁角。该方法的一部分是沉积步骤，其通过将至少一种含聚合物的气体引入真空室来进行。等离子体从含聚合物的气体点燃，然后将其用于在基底上沉积聚合物。交替重复工艺的另一部分是蚀刻步骤，其通过将含蚀刻剂的气体，含有气体的聚合物和含有气体的清除剂引入真空室来进行。等离子体从含蚀刻剂的气体中点燃，含聚合物的气体和含有清除剂的气体，然后用于蚀刻衬底。

3. 发明授权

US07959819B2 Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes 有权
标题翻译：用于在时分多路复用蚀刻工艺中减少高宽比依赖蚀刻的方法和装置
公开(公告)号：US07959819B2
公开(公告)日：2011-06-14
申请号：US11159415
申请日：2005-06-23
申请人： Shouliang Lai , David Johnson , Russell Westerman
发明人： Shouliang Lai , David Johnson , Russell Westerman
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01L21/67253 , H01L21/30655 , H01L22/20
摘要： The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.
摘要翻译：本发明提供了一种用于减小当通过交替沉积/蚀刻工艺等离子体蚀刻半导体衬底中的深沟槽时观察到的纵横比相关蚀刻的方法和装置。在交替的沉积/蚀刻工艺期间实时地监测衬底上的多个不同尺寸的特征。然后，基于从监视器接收的信息，在交替沉积/蚀刻工艺中调整至少一个工艺参数，以实现衬底上至少两个不同尺寸特征的等效蚀刻深度。

4. 发明授权

US06924235B2 Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method 失效
标题翻译：使用离散气体切换方法在高纵横比/深蚀刻中进行侧壁平滑处理
公开(公告)号：US06924235B2
公开(公告)日：2005-08-02
申请号：US10640469
申请日：2003-08-12
申请人： David Johnson , Russell Westerman , Shouliang Lai
发明人： David Johnson , Russell Westerman , Shouliang Lai
IPC分类号： B81C99/00 , H01J37/32 , H01L21/00 , H01L21/302
CPC分类号： H01L21/67017 , H01J37/3244 , H01L21/67069
摘要： An improved method for introducing gases into an alternating plasma etching/deposition chamber is provided by the present invention. To minimize the introduction of pressure pulses into the alternating etching/deposition chamber when the deposition and etchant gas supplies are switched on and off, a mass flow controller is used to provide a relatively constant flow of gas. A gas bypass or a gas exhaust is provided such that when a gas inlet to the alternating etching/deposition chamber is closed an alternative path is provided for the flow of gas from the mass flow controller. The provision of a bypass or exhaust maintains the pressure of the gas received from the mass flow controller at a substantially constant level. The elimination or minimization of a pressure pulse of the gas helps increase the smoothness of the walls of high aspect ratio features etched in a silicon substrate in the alternating etching/deposition chamber.
摘要翻译：通过本发明提供了将气体引入交替等离子体蚀刻/沉积室的改进方法。为了最小化在沉积和蚀刻剂气体供应被打开和关闭时将压力脉冲引入到交替蚀刻/沉积室中，使用质量流量控制器来提供相对恒定的气体流。提供气体旁路或气体排气，使得当交替蚀刻/沉积室的气体入口被关闭时，提供了用于来自质量流量控制器的气体流的替代路径。旁路或排气管的设置将从质量流量控制器接收的气体的压力保持在基本恒定的水平。消除或最小化气体的压力脉冲有助于增加在交替蚀刻/沉积室中在硅衬底中蚀刻的高纵横比特征的壁的平滑度。

5. 发明申请

US20050263485A1 Method and apparatus for process control in time division multiplexed (TDM) etch processes 有权
标题翻译：用于时分复用（TDM）蚀刻工艺中的过程控制的方法和装置
公开(公告)号：US20050263485A1
公开(公告)日：2005-12-01
申请号：US11155904
申请日：2005-06-20
申请人： David Johnson , Russell Westerman , Mike Teixeira , Shouliang Lai
发明人： David Johnson , Russell Westerman , Mike Teixeira , Shouliang Lai
IPC分类号： G05D16/20 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/302 , G01R31/00
CPC分类号： G05D16/2013 , H01J37/3244 , H01J37/32449 , H01J37/32935 , H01L21/67253 , Y10T137/2544
摘要： The present invention provides a method for controlling pressure in a chamber during a time division multiplexed process. A throttle valve is positioned based on an open-loop pressure control algorithm within at least one step of the time division multiplexed etch process. A pressure response of the step is evaluated and compared to a desired pressure response. The throttle valve is then positioned through a proportional, integral and derivative controller step to step of the time division multiplexed etch process based on the evaluation to the desired pressure response.
摘要翻译：本发明提供一种在时分多路复用过程中控制室内的压力的方法。在时分复用蚀刻工艺的至少一个步骤中，基于开环压力控制算法定位节流阀。评估该步骤的压力响应并将其与期望的压力响应进行比较。然后基于对期望的压力响应的评估，节流阀通过比例积分和微分控制器定位到步进到时分复用蚀刻工艺。

6. 发明授权

US07381650B2 Method and apparatus for process control in time division multiplexed (TDM) etch processes 有权
标题翻译：用于时分复用（TDM）蚀刻工艺中的过程控制的方法和装置
公开(公告)号：US07381650B2
公开(公告)日：2008-06-03
申请号：US11155904
申请日：2005-06-20
申请人： David Johnson , Russell Westerman , Mike Teixeira , Shouliang Lai
发明人： David Johnson , Russell Westerman , Mike Teixeira , Shouliang Lai
IPC分类号： H01L21/461 , H01L21/302 , G05D7/00
CPC分类号： G05D16/2013 , H01J37/3244 , H01J37/32449 , H01J37/32935 , H01L21/67253 , Y10T137/2544
摘要： The present invention provides a method for controlling pressure in a chamber during a time division multiplexed process. A throttle valve is positioned based on an open-loop pressure control algorithm within at least one step of the time division multiplexed etch process. A pressure response of the step is evaluated and compared to a desired pressure response. The throttle valve is then positioned through a proportional, integral and derivative controller step to step of the time division multiplexed etch process based on the evaluation to the desired pressure response.
摘要翻译：本发明提供一种在时分多路复用过程中控制室内的压力的方法。在时分复用蚀刻工艺的至少一个步骤中，基于开环压力控制算法定位节流阀。评估该步骤的压力响应并将其与期望的压力响应进行比较。然后基于对期望的压力响应的评估，节流阀通过比例积分和微分控制器定位到步进到时分复用蚀刻工艺。

7. 发明申请

US20070217119A1 Apparatus and Method for Carrying Substrates 审中-公开
标题翻译：装载基板的装置和方法
公开(公告)号：US20070217119A1
公开(公告)日：2007-09-20
申请号：US11681805
申请日：2007-03-05
申请人： David Johnson , Shouliang Lai
发明人： David Johnson , Shouliang Lai
IPC分类号： B23B31/28 , H01L21/683 , H01L21/306 , C23C16/00
CPC分类号： B25B11/00 , H01L21/6831 , H01L21/68771 , Y10T29/49998 , Y10T279/23
摘要： The present invention provides a method and an apparatus for carrying at least one substrate for plasma processing. The method and apparatus comprising a carrier for transporting the substrate, that is located unbonded on the carrier, onto a substrate support within a plasma system for plasma processing. An electrostatic clamp, that is coupled to the substrate support, electrostatically secures the substrate to the substrate support through the carrier during plasma processing.
摘要翻译：本发明提供一种用于承载至少一个等离子体处理用基板的方法和装置。该方法和装置包括用于将未被粘合在载体上的衬底输送到用于等离子体处理的等离子体系统内的衬底支架上的载体。耦合到衬底支撑件的静电夹具在等离子体处理期间通过载体静电将衬底固定到衬底支撑件上。

8. 发明授权

US06905626B2 Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma 有权
标题翻译：使用交替沉积和蚀刻以及脉冲等离子体，对高边SOI结构进行无槽蚀刻
公开(公告)号：US06905626B2
公开(公告)日：2005-06-14
申请号：US10601076
申请日：2003-06-19
申请人： Russell Westerman , David Johnson , Shouliang Lai
发明人： Russell Westerman , David Johnson , Shouliang Lai
IPC分类号： B81C99/00 , H01L21/3065 , H01L21/00
CPC分类号： B81C1/00579 , H01L21/30655
摘要： A method of preventing notching during a cyclical etching and deposition of a substrate with an inductively coupled plasma source is provided by the present invention. In accordance with the method, the inductively coupled plasma source is pulsed to prevent charge build up on the substrate. The off state of the inductively coupled plasma source is selected to be long enough that charge bleed off can occur, but not so long that reduced etch rates result due to a low duty cycle. The pulsing may be controlled such that it only occurs when the substrate is etched such that an insulating layer is exposed. A bias voltage may also be provided to the insulating layer and the bias voltage may be pulsed in phase or out of phase with the pulsing of the inductively coupled plasma source.
摘要翻译：本发明提供了一种在电感耦合等离子体源的循环蚀刻和衬底沉积期间防止开槽的方法。根据该方法，电感耦合等离子体源被脉冲以防止电荷在基板上积聚。电感耦合等离子体源的关闭状态被选择为足够长以使电荷泄漏可能发生，但不会如此长，以致由于低占空比导致降低的蚀刻速率。可以控制脉冲，使得其仅在蚀刻基板以使得绝缘层暴露时才发生。还可以向绝缘层提供偏置电压，并且偏置电压可以与电感耦合等离子体源的脉冲相位或异相脉冲。

9. 发明授权

US07115520B2 Method and apparatus for process control in time division multiplexed (TDM) etch process 有权
标题翻译：用于时分复用（TDM）蚀刻工艺中的过程控制的方法和装置
公开(公告)号：US07115520B2
公开(公告)日：2006-10-03
申请号：US10815965
申请日：2004-03-31
申请人： David Johnson , Shouliang Lai , Russell Westerman
发明人： David Johnson , Shouliang Lai , Russell Westerman
IPC分类号： H01L21/461 , H01L21/302 , G05D7/00
CPC分类号： H01J37/3244 , H01J37/32449 , H01L21/67253 , Y10T137/2544
摘要： The present invention provides a method for controlling pressure in a vacuum chamber during a time division multiplexed process. A throttle valve is pre-positioned and held for a predetermined period of time. A process gas is introduced into the vacuum chamber during the associated plasma step (deposition or etching) of the silicon wafer. At the end of the predetermined period of time, the process gas continues to flow with the throttle valve being released from the set position. At this point, the throttle valve is regulated through a proportional derivative and integral control for a period that lasts the remaining time of the associated plasma step.
摘要翻译：本发明提供一种在时分复用过程中控制真空室中的压力的方法。节气门预定位并保持预定时间段。在硅晶片的相关等离子体步骤（沉积或蚀刻）期间，将工艺气体引入真空室。在预定时间段结束时，处理气体继续流动，节流阀从设定位置释放。此时，节流阀通过比例导数和积分控制进行调节，持续相关等离子体步骤的剩余时间。

10. 发明申请

US20050287815A1 Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes 有权
标题翻译：用于在时分多路复用蚀刻工艺中减少高宽比依赖蚀刻的方法和装置
公开(公告)号：US20050287815A1
公开(公告)日：2005-12-29
申请号：US11159415
申请日：2005-06-23
申请人： Shouliang Lai , David Johnson , Russell Westerman
发明人： Shouliang Lai , David Johnson , Russell Westerman
IPC分类号： C23F1/00 , G01L21/30 , G01R31/00 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/461 , H01L21/66
CPC分类号： H01L21/67253 , H01L21/30655 , H01L22/20
摘要： The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.
摘要翻译：本发明提供了一种用于减小当通过交替沉积/蚀刻工艺等离子体蚀刻半导体衬底中的深沟槽时观察到的纵横比相关蚀刻的方法和装置。在交替的沉积/蚀刻工艺期间实时地监测衬底上的多个不同尺寸的特征。然后，基于从监视器接收的信息，在交替沉积/蚀刻工艺中调整至少一个工艺参数，以实现衬底上至少两个不同尺寸特征的等效蚀刻深度。

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