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1. 发明申请

US20190233277A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
公开(公告)号：US20190233277A1
公开(公告)日：2019-08-01
申请号：US16379982
申请日：2019-04-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. JAHNES , Anthony K. STAMPER
IPC分类号： B81B3/00 , H01L41/113 , B81C1/00 , H01H57/00 , G06F17/50 , H01H1/00 , H01H59/00
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

2. 发明申请

US20180346318A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
公开(公告)号：US20180346318A1
公开(公告)日：2018-12-06
申请号：US16042303
申请日：2018-07-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Anthony K. Stamper , John G. Twombly
IPC分类号： B81B3/00 , H01L41/113 , B81C1/00 , H01H59/00 , G06F17/50 , H01H1/00
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

3. 发明申请

US20180244517A1 Microstructure manufacturing method and ION beam apparatus 审中-公开
公开(公告)号：US20180244517A1
公开(公告)日：2018-08-30
申请号：US15932194
申请日：2018-02-16
申请人： Hitachi, Ltd.
发明人： Hiroyasu Shichi , Keiji Watanabe , Daisuke Ryuzaki
IPC分类号： B81C1/00 , H01J27/02 , H01L21/687
CPC分类号： B81C1/00341 , B81C1/00626 , B81C2201/0132 , H01J27/022 , H01J37/3005 , H01J37/3056 , H01J2237/31749 , H01L21/68714
摘要： A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.

4. 发明申请

US20180072566A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
公开(公告)号：US20180072566A1
公开(公告)日：2018-03-15
申请号：US15802789
申请日：2017-11-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. JAHNES , Anthony K. STAMPER
IPC分类号： H01P1/10 , B81C1/00 , H01H59/00 , H01L41/113 , H01H57/00 , G06F17/50 , B81B3/00 , H01H1/00
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

5. 发明申请

US20170158490A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权
公开(公告)号：US20170158490A1
公开(公告)日：2017-06-08
申请号：US15437727
申请日：2017-02-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. JAHNES , Anthony K. STAMPER
IPC分类号： B81B3/00 , G06F17/50 , B81C1/00
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

6. 发明申请

US20170115175A1 PRESSURE SENSOR WITH SUPPORT STRUCTURE FOR NON-SILICON DIAPHRAGM 有权
公开(公告)号：US20170115175A1
公开(公告)日：2017-04-27
申请号：US14924631
申请日：2015-10-27
申请人： DunAn Sensing, LLC
发明人： TOM KWA
IPC分类号： G01L9/00
CPC分类号： G01L9/0052 , B81B2201/0264 , B81C1/00158 , B81C1/00523 , B81C1/00626 , B81C1/00785 , G01L9/0042 , G01L9/0054
摘要： A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.

7. 发明申请

US20170113927A1 METHODS FOR FABRICATING PRESSURE SENSORS WITH NON-SILICON DIAPHRAGMS 审中-公开
公开(公告)号：US20170113927A1
公开(公告)日：2017-04-27
申请号：US14963090
申请日：2015-12-08
申请人： DunAn Sensing, LLC
发明人： Tom Kwa
IPC分类号： B81C1/00
CPC分类号： G01L9/0052 , B81B2201/0264 , B81C1/00158 , B81C1/00523 , B81C1/00626 , B81C1/00785 , G01L9/0042 , G01L9/0054 , H01L41/053 , H01L41/25 , H01L41/27 , Y10T29/42 , Y10T29/49005
摘要： A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.

8. 发明申请

US20170043501A1 METHOD OF MANUFACTURE OF MICRO COMPONENTS, AND COMPONENTS FORMED BY SUCH A PROCESS 审中-公开
标题翻译：微量组分的制备方法，以及这些方法形成的组分
公开(公告)号：US20170043501A1
公开(公告)日：2017-02-16
申请号：US15306477
申请日：2015-04-22
申请人： Master Dynamic Limited
发明人： Yingnan WANG , Jianxing HUANG
IPC分类号： B28D5/04 , C09K13/08 , G03F7/40
CPC分类号： B28D5/04 , B81C1/00626 , B81C2201/0132 , C09K13/08 , G03F7/405
摘要： A method of forming a multi-level component includes the step of forming at least one arrangement of micro trenches in a predetermined arrangement in a mask material by a lithography process. Another step involves applying one or more etching processes to a surface of a component upon which the mask is applied. The micro trenches have either first or second different aspect ratios. In the applying step, the component is etched by an aspect ratio dependent etch (ARDE) process so as to form an arrangement of micro trenches and micro pillars between adjacent micro trenches. Another step involves removing the arrangement of micro pillars from the component by a removal process. There is also a multi-level component made according to the above method with a first portion at a first level and a further portion of a further level different from the first level.
摘要翻译：形成多级部件的方法包括通过光刻工艺在掩模材料中以预定布置形成至少一个微沟槽布置的步骤。另一步骤包括对施加掩模的部件的表面施加一个或多个蚀刻工艺。微沟槽具有第一或第二不同的纵横比。在施加步骤中，通过纵横比依赖蚀刻（ARDE）工艺来蚀刻部件，以便在相邻的微沟槽之间形成微沟槽和微柱的布置。另一个步骤是通过移除过程从组件中移除微柱的排列。还有根据上述方法制造的多级组件，其中第一部分处于第一级，而另一部分又与第一级不同。

9. 发明申请

US20160355392A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
公开(公告)号：US20160355392A1
公开(公告)日：2016-12-08
申请号：US15238854
申请日：2016-08-17
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Anthony K. Stamper , John G. Twombly
IPC分类号： B81B3/00 , H01H59/00 , B81C1/00 , G06F17/50
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

10. 发明申请

US20160244321A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权
标题翻译：平面CAVITY MEMS及相关结构，制造方法和设计结构
公开(公告)号：US20160244321A1
公开(公告)日：2016-08-25
申请号：US15148130
申请日：2016-05-06
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher V. JAHNES , Anthony K. STAMPER
IPC分类号： B81B3/00 , H01H59/00 , H01H1/00 , B81C1/00
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
摘要翻译：形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。

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