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1. 发明授权

US08264005B2 Compound semiconductor device including AIN layer of controlled skewness 有权
公开(公告)号：US08264005B2
公开(公告)日：2012-09-11
申请号：US12772661
申请日：2010-05-03
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

2. 发明授权

US08193539B2 Compound semiconductor device using SiC substrate and its manufacture 有权
标题翻译：使用SiC衬底的复合半导体器件及其制造
公开(公告)号：US08193539B2
公开(公告)日：2012-06-05
申请号：US12889724
申请日：2010-09-24
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H01L29/24
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer layer not containing Cl; and a device constituent layer or layers formed above said compound semiconductor buffer layer not containing Cl.
摘要翻译：化合物半导体器件包括：导电SiC衬底; 形成在所述导电性SiC基板上并含有Cl的AlN缓冲层; 在包含Cl的所述AlN层上形成的化合物半导体缓冲层，所述化合物半导体缓冲层不含Cl; 以及在不含Cl的化合物半导体缓冲层的上方形成的器件构成层。

3. 发明申请

US20120056191A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS 审中-公开
标题翻译：半导体器件及其制造方法和电源装置
公开(公告)号：US20120056191A1
公开(公告)日：2012-03-08
申请号：US13152426
申请日：2011-06-03
申请人： Hiroshi Endo , Tadahiro Imada , Kenji Imanishi , Toshihide Kikkawa
发明人： Hiroshi Endo , Tadahiro Imada , Kenji Imanishi , Toshihide Kikkawa
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L29/7787 , H01L21/30612 , H01L21/30621 , H01L21/8252 , H01L27/0605 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/518 , H01L29/66462
摘要： A semiconductor device includes a GaN electron transport layer provided over a substrate; a first AlGaN electron supply layer provided over the GaN electron transport layer; an AlN electron supply layer provided over the first AlGaN electron supply layer; a second AlGaN electron supply layer provided over the AlN electron supply layer; a gate recess provided in the second AlGaN electron supply layer and the AlN electron supply layer; and a gate electrode provided over the gate recess.
摘要翻译：半导体器件包括设置在衬底上的GaN电子传输层; 设置在所述GaN电子传输层上的第一AlGaN电子供给层; 设置在所述第一AlGaN电子供给层上的AlN电子供给层; 设置在AlN电子供给层上的第二AlGaN电子供给层; 设置在所述第二AlGaN电子供给层和所述AlN电子供给层中的栅极凹部; 以及设置在栅极凹部上方的栅电极。

4. 发明授权

US08044492B2 Compound semiconductor device including AIN layer of controlled skewness 有权
标题翻译：复合半导体器件包括受控偏移的AIN层
公开(公告)号：US08044492B2
公开(公告)日：2011-10-25
申请号：US12059693
申请日：2008-03-31
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/30 , H01L33/22
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和AlN层之间的界面，并且所述AlN层的上表面的偏斜度是积极的。

5. 发明申请

US20100066451A1 Compound semiconductor device and doherty amplifier using compound semiconductor device 有权
公开(公告)号：US20100066451A1
公开(公告)日：2010-03-18
申请号：US12591574
申请日：2009-11-24
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H03F3/16 , H01L29/778
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/452 , H01L29/66462 , H03F1/0288
摘要： A lower electron supply layer is disposed over a lower electron transport layer made of compound semiconductor. The lower electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the lower electron transport layer. An upper electron transport layer is disposed over the lower electron supply layer. The upper electron transport layer is made of compound semiconductor having a doping concentration lower than that of the lower electron supply layer or non-doped compound semiconductor. An upper electron supply layer is disposed over the upper electron transport layer. The upper electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the upper electron transport layer. A source and drain electrodes are disposed over the upper electron supply layer. A gate electrode is disposed over the upper electron supply layer between the source and drain electrodes.

6. 发明申请

US20090065787A1 COMPOUND SEMICONDUCTOR STRUCTURE 有权
标题翻译：化合物半导体结构
公开(公告)号：US20090065787A1
公开(公告)日：2009-03-12
申请号：US12248357
申请日：2008-10-09
申请人： Toshihide KIKKAWA , Kenji IMANISHI
发明人： Toshihide KIKKAWA , Kenji IMANISHI
IPC分类号： H01L29/205 , H01L29/778 , H01L21/336
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66462
摘要： A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×105 Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×103 Ωcm to 1×105 Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×105 Ωcm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 μm on the conductive SiC substrate by hydride VPE.
摘要翻译：一种化合物半导体结构的制造方法，包括：（a）根据颜色和电阻率选择导电性SiC基板，（b）在选择的导电性SiC基板上外延生长GaN系化合物半导体层。步骤（a）优选选择导电类型为n型，电导率为0.08Ωg至1×1050Ωg的主颜色为绿色的导电性SiC衬底，或其主要颜色为黑色，导电类型为p型，其导电类型为电阻率为1×10 3Ω·mol〜1×10 5Ω·cm，或其主要颜色为蓝色，其导电类型为p型，电阻率为10Ω·cm〜1×10-5Ω·cm。步骤（b）优选包括（b-1）在导电SiC衬底上通过氢化物VPE生长具有不薄于10μm的厚度的AlInGaN层。

7. 发明申请

US20080237610A1 COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS 有权
标题翻译：化合物半导体器件，其中包括控制层的一层
公开(公告)号：US20080237610A1
公开(公告)日：2008-10-02
申请号：US12059693
申请日：2008-03-31
申请人： Kenji IMANISHI , Toshihide KIKKAWA , Takeshi TANAKA , Yoshihiko MORIYA , Yohei OTOKI
发明人： Kenji IMANISHI , Toshihide KIKKAWA , Takeshi TANAKA , Yoshihiko MORIYA , Yohei OTOKI
IPC分类号： H01L29/267 , H01L21/203 , H01L21/338
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和AlN层之间的界面，并且所述AlN层的上表面的偏斜度是积极的。

8. 发明授权

US5682040A Compound semiconductor device having a reduced resistance 失效
标题翻译：化合物半导体器件具有降低的电阻
公开(公告)号：US5682040A
公开(公告)日：1997-10-28
申请号：US611008
申请日：1996-03-05
申请人： Kenji Imanishi
发明人： Kenji Imanishi
IPC分类号： H01L29/73 , H01L21/205 , H01L21/331 , H01L21/338 , H01L29/205 , H01L29/737 , H01L29/778 , H01L29/812 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66318 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/0262 , H01L29/205 , H01L29/7371 , H01L29/7783
摘要： A method for fabricating a semiconductor device includes a step of depositing a first compound semiconductor layer by a MOVPE process to have a first conductivity type, doping a surface of the first compound semiconductor layer to the same, first conductivity type, by implementing a planar doping process as a result of decomposition of a gaseous dopant, such that no substantial growth of the first compound semiconductor layer occurs during the planar doping process, and depositing a second compound semiconductor layer of the first conductivity type on the doped surface of the first compound semiconductor layer by a MOVPE process.
摘要翻译：一种制造半导体器件的方法包括通过MOVPE工艺沉积第一化合物半导体层以具有第一导电类型，通过实施平面掺杂将第一化合物半导体层的表面掺杂到相同的第一导电类型的步骤作为气态掺杂剂分解的结果，使得在平面掺杂工艺期间不发生第一化合物半导体层的显着生长，并且在第一化合物半导体的掺杂表面上沉积第一导电类型的第二化合物半导体层层通过MOVPE过程。

9. 发明授权

US5610410A III-V compound semiconductor device with Schottky electrode of increased barrier height 失效
标题翻译：具有增加势垒高度的肖特基电极的III-V化合物半导体器件
公开(公告)号：US5610410A
公开(公告)日：1997-03-11
申请号：US398519
申请日：1995-03-03
申请人： Kenji Imanishi
发明人： Kenji Imanishi
IPC分类号： H01L29/812 , H01L21/338 , H01L29/43 , H01L29/778 , H01L29/80 , H01L31/0256
CPC分类号： H01L29/432 , H01L29/802
摘要： A field effect group III-V compound semiconductor device having a Schottky gate electrode includes: a semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers including an active layer for transferring carriers and formed on the semiconductor substrate; an InAlP layer formed at least a partial surface of the group III-V compound semiconductor crystal layers; a gate electrode formed on the InAlP layer and forming Schottky contact therewith; and a pair of source/drain electrodes disposed to interpose therebetween the gate electrode, and forming ohmic contact with the active layer. A group III-V compound semiconductor device is provided with a Schottky electrode highly resistant to a current flow.
摘要翻译：具有肖特基电极的场效应组III-V族化合物半导体器件包括：半导体衬底; 多个III-V族化合物半导体晶体层，包括用于转移载流子并形成在半导体衬底上的有源层; 形成III-V族化合物半导体晶体层的至少部分表面的InAlP层; 形成在InAlP层上并与其形成肖特基接触的栅电极; 以及一对源极/漏极电极，设置成在栅电极之间插入，并与有源层形成欧姆接触。 III-V族化合物半导体器件具有对电流高度耐受的肖特基电极。

10. 发明申请

US20130139950A1 ROTATIONAL MISALIGNMENT MEASURING DEVICE OF BONDED SUBSTRATE, ROTATIONAL MISALIGNMENT MEASURING METHOD OF BONDED SUBSTRATE, AND METHOD OF MANUFACTURING BONDED SUBSTRATE 有权
标题翻译：粘结基板的旋转误差测量装置，结合基板的旋转缺陷测量方法和制造粘结基板的方法
公开(公告)号：US20130139950A1
公开(公告)日：2013-06-06
申请号：US13691491
申请日：2012-11-30
申请人： Masato KANNAKA , Masakazu Kajita , Eiji Takahashi , Yuji Yamamoto , Masaru Akamatsu , Kunio Iba , Kenji Imanishi
发明人： Masato KANNAKA , Masakazu Kajita , Eiji Takahashi , Yuji Yamamoto , Masaru Akamatsu , Kunio Iba , Kenji Imanishi
IPC分类号： G01B11/27
CPC分类号： G01B11/272
摘要： A rotational misalignment between semiconductor wafers constituting a bonded wafer is calculated. A light source is arranged at a position which is on a front side of an opening of a notch and which is separated from an outer edge portion of a bonded wafer by a predetermined interval, and outputs light to irradiate the outer edge portion of the bonded wafer including the notch. A camera receives and photoelectrically converts reflected light that is specularly-reflected by the outer edge portion of the bonded wafer including the notch among the light outputted by the light source in order to output a brightness distribution of the reflected light as an image. A computer analyzes positions of notches from the image outputted by the camera to obtain a notch position misalignment, and further calculates a rotational misalignment between semiconductor wafers using a center position misalignment between the semiconductor wafers.
摘要翻译：计算构成接合晶片的半导体晶片之间的旋转未对准。光源布置在位于凹口的开口的前侧上并且与键合晶片的外边缘部分隔开预定间隔的位置处，并输出光以照射粘合的晶片的外边缘部分晶圆包括凹口。照相机接收并光电转换由光源输出的光中包括凹口的键合晶片的外边缘部分被镜面反射的反射光，以输出作为图像的反射光的亮度分布。计算机分析由相机输出的图像的凹口的位置以获得切口位置未对准，并且还使用半导体晶片之间的中心位置未对准来计算半导体晶片之间的旋转未对准。

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