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1. 发明申请

US20120067275A1 COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS 有权
标题翻译：化合物半导体器件，其中包括控制层的一层
公开(公告)号：US20120067275A1
公开(公告)日：2012-03-22
申请号：US13237084
申请日：2011-09-20
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： C30B25/10 , C30B25/02
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度是积极的。

2. 发明授权

US08440549B2 Compound semiconductor device including aln layer of controlled skewness 有权
标题翻译：复合半导体器件包括受控偏移的Aln层
公开(公告)号：US08440549B2
公开(公告)日：2013-05-14
申请号：US13237084
申请日：2011-09-20
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L21/20 , H01L33/32
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度是积极的。

3. 发明授权

US08264006B2 Compound semiconductor device including AIN layer of controlled skewness 有权
标题翻译：复合半导体器件包括受控偏移的AIN层
公开(公告)号：US08264006B2
公开(公告)日：2012-09-11
申请号：US12772624
申请日：2010-05-03
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度是积极的。

4. 发明授权

US08264005B2 Compound semiconductor device including AIN layer of controlled skewness 有权
公开(公告)号：US08264005B2
公开(公告)日：2012-09-11
申请号：US12772661
申请日：2010-05-03
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

5. 发明授权

US08044492B2 Compound semiconductor device including AIN layer of controlled skewness 有权
标题翻译：复合半导体器件包括受控偏移的AIN层
公开(公告)号：US08044492B2
公开(公告)日：2011-10-25
申请号：US12059693
申请日：2008-03-31
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/30 , H01L33/22
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和AlN层之间的界面，并且所述AlN层的上表面的偏斜度是积极的。

6. 发明授权

US07859020B2 Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifier 有权
标题翻译：氮化物半导体器件，Doherty放大器和漏极电压控制放大器
公开(公告)号：US07859020B2
公开(公告)日：2010-12-28
申请号：US12173392
申请日：2008-07-15
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H01L31/072
CPC分类号： H03F1/0288 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L29/1075 , H01L29/2003 , H01L29/7787 , H03F2200/15 , H03F2200/451 , H03F2200/543
摘要： A nitride semiconductor device includes a substrate, a stacked semiconductor structure formed over the substrate and including a electron channel layer of an undoped nitride semiconductor and an electron supplying layer of an n-type nitride semiconductor formed epitaxially over the electron channel layer, the n-type nitride semiconductor having an electron affinity smaller than an electron affinity of said undoped nitride semiconductor and a two-dimensional electron gas being formed in the electron channel layer along an interface to the electron supply layer, a gate electrode formed over the stacked semiconductor structure in correspondence to a channel region, and source and drain electrodes formed over the stacked semiconductor structure in ohmic contact therewith respectively at a first side and a second side of the gate electrode, the stacked semiconductor structure including, between the substrate and the electron channel layer, an n-type conductive layer and a barrier layer containing Al formed consecutively and epitaxially.
摘要翻译：氮化物半导体器件包括衬底，在衬底上形成的堆叠半导体结构，并且包括在电子沟道层外部形成的非掺杂氮化物半导体的电子沟道层和n型氮化物半导体的电子供给层，具有小于所述未掺杂的氮化物半导体的电子亲和力的电子亲和力的二次电子气体和沿着与电子供应层的界面在电子通道层中形成的二维电子气的氮化物半导体，形成在堆叠半导体结构上的栅电极对应于沟道区，以及源极和漏极，其形成在层叠的半导体结构上，分别与栅电极的第一侧和第二侧欧姆接触，该层叠半导体结构包括在衬底和电子通道层之间， n型导电层和阻挡层 aining铝连续形成和外延形成。

7. 发明授权

US07777251B2 Compound semiconductor device and doherty amplifier using compound semiconductor device 有权
标题翻译：使用化合物半导体器件的复合半导体器件和doherty放大器
公开(公告)号：US07777251B2
公开(公告)日：2010-08-17
申请号：US12591574
申请日：2009-11-24
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H01L29/80
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/452 , H01L29/66462 , H03F1/0288
摘要： A lower electron supply layer is disposed over a lower electron transport layer made of compound semiconductor. The lower electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the lower electron transport layer. An upper electron transport layer is disposed over the lower electron supply layer. The upper electron transport layer is made of compound semiconductor having a doping concentration lower than that of the lower electron supply layer or non-doped compound semiconductor. An upper electron supply layer is disposed over the upper electron transport layer. The upper electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the upper electron transport layer. A source and drain electrodes are disposed over the upper electron supply layer. A gate electrode is disposed over the upper electron supply layer between the source and drain electrodes.
摘要翻译：较低的电子供应层设置在由化合物半导体制成的较低电子传输层上。较低的电子供应层由电子亲和力小于低电子传输层的n型化合物半导体制成。上电子传输层设置在下电子供应层上。上部电子传输层由具有低于下部电子供给层或非掺杂化合物半导体的掺杂浓度的化合物半导体制成。上电子供给层设置在上电子传输层上。上电子供给层由电子亲和力小于上电子传输层的n型化合物半导体制成。源电极和漏电极设置在上电子供应层上。栅电极设置在源电极和漏电极之间的上电子供应层上。

8. 发明授权

US07638819B2 Compound semiconductor device and the fabricating method of the same 有权
标题翻译：复合半导体器件及其制造方法
公开(公告)号：US07638819B2
公开(公告)日：2009-12-29
申请号：US11181730
申请日：2005-07-15
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003
摘要： A GaN layer functions as an electron transit layer and is formed to exhibit, at least at a portion thereof, A/B ratio of 0.2 or less obtained by a photoluminescence measurement, where “A” is the light-emission intensity in the 500-600 nm band, and “B” is the light-emission intensity at the GaN band-edge.
摘要翻译： GaN层用作电子转移层，并且形成为至少在其一部分中通过光致发光测量获得的A / B比为0.2以下，其中“A”是500nm的发光强度， 600nm带，“B”是GaN带边缘处的发光强度。

9. 发明授权

US08581335B2 Compound semiconductor device and manufacturing method thereof 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US08581335B2
公开(公告)日：2013-11-12
申请号：US13238258
申请日：2011-09-21
申请人： Kenji Imanishi , Toshihide Kikkawa
发明人： Kenji Imanishi , Toshihide Kikkawa
IPC分类号： H01L29/66
CPC分类号： H01L29/201 , H01L29/0692 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7787
摘要： A first AlGaN layer formed over a substrate, a second AlGaN layer formed over the first AlGaN layer, an electron transit layer formed over the second AlGaN layer, and an electron supply layer formed over the electron transit layer are provided. A relationship of “0≦x1
摘要翻译：提供了形成在衬底上的第一AlGaN层，形成在第一AlGaN层上的第二AlGaN层，形成在第二AlGaN层上的电子迁移层以及形成在电子迁移层上的电子供应层。当第一AlGaN层的组成由Al x Ga 1-x N N表示，并且第二AlGaN层的组成由Al x Ga 1-x 2 N表示时，找到“0 @ x1

10. 发明授权

US08426260B2 Compound semiconductor device and method of manufacturing the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US08426260B2
公开(公告)日：2013-04-23
申请号：US13294726
申请日：2011-11-11
申请人： Toyoo Miyajima , Toshihide Kikkawa , Kenji Imanishi , Toshihiro Ohki , Masahito Kanamura
发明人： Toyoo Miyajima , Toshihide Kikkawa , Kenji Imanishi , Toshihiro Ohki , Masahito Kanamura
IPC分类号： H01L21/338 , H01L29/66
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/4236 , H01L29/7787
摘要： A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.
摘要翻译：化合物半导体器件包括：形成在衬底上的电子传输层; 形成在电子传输层上的电子供应层; 以及形成在所述电子供给层上的盖层; 盖层包括含有GaN的第一化合物半导体层; 含有AlN的第二化合物半导体层，其形成在所述第一化合物半导体层上; 含有GaN的第三化合物半导体层，其形成在所述第二化合物半导体层上; 以及第一AlGaN含有层和第二含AlGaN的层中的至少一个，其中形成在第一化合物半导体层和第二化合物半导体层之间的第一AlGaN含有层，并且Al含量朝向第二化合物半导体层增加并且形成在第二化合物半导体层和第三化合物半导体层之间的第二AlGaN含量层和Al含量朝向第二化合物半导体层增加。

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