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1. 发明授权

US06392752B1 Phase-measuring microlens microscopy 失效
标题翻译：相位微透镜显微镜
公开(公告)号：US06392752B1
公开(公告)日：2002-05-21
申请号：US09591723
申请日：2000-06-12
申请人： Kenneth Carlisle Johnson
发明人： Kenneth Carlisle Johnson
IPC分类号： G01B902
CPC分类号： G02B5/1876 , B82Y10/00 , F25J2215/36 , G02B5/1885 , G02B21/0028 , G02B21/004 , G02B21/0044 , G02B21/0056 , G02B21/14 , G03F7/70033 , G03F7/70291 , G03F7/704 , G03F9/70 , G21K7/00
摘要： A scanning microlens array functions in a manner analogous to an array of interference microscopes to provide phase-sensitive, confocal micro-imaging capability. Moreover, the scanning mechanism can effectively perform a phase-modulation function. In this mode of operation, each image point is scanned by multiple microlenses that have fixed, but differing, built-in phase offsets, and the combination of signals acquired from the multiple scans effectively simulate a phase-modulated interference signal.
摘要翻译：扫描微透镜阵列以类似于干涉显微镜阵列的方式起作用以提供相敏，共焦显微成像能力。此外，扫描机构可以有效地执行相位调制功能。在这种操作模式下，每个图像点被具有固定但不同的内置相位偏移的多个微透镜扫描，并且从多个扫描获取的信号的组合有效地模拟相位调制的干扰信号。

2. 发明申请

US20230011685A1 UV Lithography System 有权
公开(公告)号：US20230011685A1
公开(公告)日：2023-01-12
申请号：US17372446
申请日：2021-07-10
申请人： Kenneth Carlisle Johnson
发明人： Kenneth Carlisle Johnson
IPC分类号： G03F7/20
摘要： A multifunction UV or DUV (ultraviolet/deep-ultraviolet) lithography system uses a modified Schwarzschild flat-image projection system to achieve diffraction-limited, distortion-free and double-telecentric imaging over a large image field at high numerical aperture. A back-surface primary mirror enables wide-field imaging without large obscuration loss, and additional lens elements enable diffraction-limited and substantially distortion-free, double-telecentric imaging. The system can perform maskless lithography (either source-modulated or spatially-modulated), mask-projection lithography (either conventional imaging or holographic), mask writing, wafer writing, and patterning of large periodic or aperiodic structures such as microlens arrays and spatial light modulators, with accurate field stitching to cover large areas exceeding the image field size.

3. 发明授权

US10025079B2 Actinic, spot-scanning microscope for EUV mask inspection and metrology 有权
公开(公告)号：US10025079B2
公开(公告)日：2018-07-17
申请号：US15269848
申请日：2016-09-19
申请人： Kenneth Carlisle Johnson
发明人： Kenneth Carlisle Johnson
IPC分类号： G02B21/00
摘要： An actinic, through-pellicle EUV mask inspection or metrology system acquires image information by scanning an array of focused illumination spots across a photomask and detecting the mask reflectance signal from each spot in synchronization with the scan motion. The radiation from each spot is detected by a detector comprising four quadrant sensors to provide information on the angular reflectance distribution, which is sensitive to the reflectance phase. The focal spots are generated from achromatic EUV microlenses (phase-Fresnel, Schupmann doublets), enabling the use of a high-bandwidth, high-power, laser-produced-plasma EUV source for high-throughput operation. The microlens foci are projected through illumination optics (EUV mirrors) onto the focal spots at the mask, and the microlenses nullify the illumination optics' geometric aberrations for substantially aberration-free point imaging. Aberration-correcting micro-optics may also be used for the collection optics between the mask and the detector array.

4. 发明申请

US20170090172A1 Actinic, Spot-Scanning Microscope for EUV Mask Inspection and Metrology 审中-公开
公开(公告)号：US20170090172A1
公开(公告)日：2017-03-30
申请号：US15269848
申请日：2016-09-19
申请人： Kenneth Carlisle Johnson
发明人： Kenneth Carlisle Johnson
IPC分类号： G02B21/00 , G02B27/00 , G02B3/08
CPC分类号： G02B21/0016 , G02B21/0032 , G02B21/004 , G02B21/008
摘要： An actinic, through-pellicle EUV mask inspection or metrology system acquires image information by scanning an array of focused illumination spots across a photomask and detecting the mask reflectance signal from each spot in synchronization with the scan motion. The radiation from each spot is detected by a detector comprising four quadrant sensors to provide information on the angular reflectance distribution, which is sensitive to the reflectance phase. The focal spots are generated from achromatic EUV microlenses (phase-Fresnel, Schupmann doublets), enabling the use of a high-bandwidth, high-power, laser-produced-plasma EUV source for high-throughput operation. The microlens foci are projected through illumination optics (EUV mirrors) onto the focal spots at the mask, and the microlenses nullify the illumination optics' geometric aberrations for substantially aberration-free point imaging. Aberration-correcting micro-optics may also be used for the collection optics between the mask and the detector array.

5. 发明申请

US20220107568A1 EUV Lithography System with Diffraction Optics 有权
$EUV Lithography System with Diffraction Optics$
公开(公告)号：US20220107568A1
公开(公告)日：2022-04-07
申请号：US17062558
申请日：2020-10-03
申请人： Kenneth Carlisle Johnson
发明人： Kenneth Carlisle Johnson
IPC分类号： G03F7/20 , G02B5/18 , G02B17/08 , G02B27/42 , G02B26/08
摘要： A maskless, extreme ultraviolet (EUV) lithography scanner uses an array of microlenses, such as binary-optic, zone-plate lenses, to focus EUV radiation onto an array of focus spots (e.g. about 2 million spots), which are imaged through projection optics (e.g., two EUV mirrors) onto a writing surface (e.g., at 6X reduction, numerical aperture 0.55). The surface is scanned while the spots are modulated to form a high-resolution, digitally synthesized exposure image. The projection system includes a diffractive mirror, which operates in combination with the microlenses to achieve point imaging performance substantially free of geometric and chromatic aberration. Similarly, a holographic EUV lithography stepper can use a diffractive photomask in conjunction with a diffractive projection mirror to achieve substantially aberration-free, full-field imaging performance for high-throughput, mask-projection lithography. Maskless and holographic EUV lithography can both be implemented at the industry-standard 13.5-nm wavelength, and could potentially be adapted for operation at a 6.7-nm wavelength.

6. 发明授权

US11561476B1 UV lithography system 有权
公开(公告)号：US11561476B1
公开(公告)日：2023-01-24
申请号：US17372446
申请日：2021-07-10
申请人： Kenneth Carlisle Johnson
发明人： Kenneth Carlisle Johnson
IPC分类号： G03F7/20
摘要： A multifunction UV or DUV (ultraviolet/deep-ultraviolet) lithography system uses a modified Schwarzschild flat-image projection system to achieve diffraction-limited, distortion-free and double-telecentric imaging over a large image field at high numerical aperture. A back-surface primary mirror enables wide-field imaging without large obscuration loss, and additional lens elements enable diffraction-limited and substantially distortion-free, double-telecentric imaging. The system can perform maskless lithography (either source-modulated or spatially-modulated), mask-projection lithography (either conventional imaging or holographic), mask writing, wafer writing, and patterning of large periodic or aperiodic structures such as microlens arrays and spatial light modulators, with accurate field stitching to cover large areas exceeding the image field size.

7. 发明授权

US06301000B1 Dual-flexure light valve 失效
标题翻译：双挠性光阀
公开(公告)号：US06301000B1
公开(公告)日：2001-10-09
申请号：US09480426
申请日：2000-01-11
申请人： Kenneth Carlisle Johnson
发明人： Kenneth Carlisle Johnson
IPC分类号： G03B2754
CPC分类号： G03F7/70275 , G03F7/70291 , G03F7/70358 , G03F7/70383
摘要： A spatial light modulator pixel includes a flexible reflective surface that is electrostatically actuated to control the surface shape and thereby phase-modulate reflected light. The reflected light is filtered by a projection aperture, wherein the phase modulation controls the amount of light from the pixel that is filtered through the aperture. The spatial light modulator includes and array of such pixels, which are imaged onto a conjugate image plane, and each pixel controls the image brightness at a corresponding conjugate image point. High image contrast is achieved by using a dual-flexure pixel design in which two flexure elements operate conjunctively to maintain well-defined diffraction nodes at or near the projection aperture edges over the full modulation range.
摘要翻译：空间光调制器像素包括柔性反射表面，其被静电致动以控制表面形状，从而相位调制反射光。反射光被投影孔径滤波，其中相位调制控制来自通过孔径滤波的像素的光量。空间光调制器包括这样的像素的阵列，其被成像到共轭图像平面上，并且每个像素在相应的共轭图像点处控制图像亮度。通过使用双挠曲像素设计来实现高图像对比度，其中两个挠曲元件在整个调制范围内在投影孔边缘处或附近以连续的方式操作以维持良好限定的衍射节点。

8. 发明授权

US06188519B1 Bigrating light valve 失效
标题翻译：增压光阀
公开(公告)号：US06188519B1
公开(公告)日：2001-02-13
申请号：US09477024
申请日：2000-01-03
申请人： Kenneth Carlisle Johnson
发明人： Kenneth Carlisle Johnson
IPC分类号： G02B518
CPC分类号： G03F7/70275 , G03F7/70291 , G03F7/70358 , G03F7/70383
摘要： A spatial light modulator pixel comprises a movable reflective surface in which an array of subapertures is formed, wherein each subaperture contains a fixed (non-movable) island reflector. The movable reflector is micromechanically actuated so that the combination of movable and fixed reflectors functions alternately as a plane mirror or as a two-dimensional diffraction grating (i.e., a “bigrating”), depending on the movable reflector's position. The device is useful for applications such as maskless lithography and high-resolution printing.
摘要翻译：空间光调制器像素包括其中形成子孔径阵列的可移动反射表面，其中每个子孔径包含固定（不可移动）岛状反射器。可移动反射器被微机械致动，使得可移动和固定反射器的组合根据可移动反射器的位置而交替地作为平面镜或二维衍射光栅（即，“大尺寸”）起作用。该器件适用于无掩模光刻和高分辨率打印等应用。

9. 发明授权

US11520235B2 EUV lithography system with diffraction optics 有权
$EUV lithography system with diffraction optics$
公开(公告)号：US11520235B2
公开(公告)日：2022-12-06
申请号：US17062558
申请日：2020-10-03
申请人： Kenneth Carlisle Johnson
发明人： Kenneth Carlisle Johnson
IPC分类号： G03F7/20 , G02B5/18 , G02B17/08 , G02B26/08 , G02B27/42
摘要： A maskless, extreme ultraviolet (EUV) lithography scanner uses an array of microlenses, such as binary-optic, zone-plate lenses, to focus EUV radiation onto an array of focus spots (e.g. about 2 million spots), which are imaged through projection optics (e.g., two EUV mirrors) onto a writing surface (e.g., at 6× reduction, numerical aperture 0.55). The surface is scanned while the spots are modulated to form a high-resolution, digitally synthesized exposure image. The projection system includes a diffractive mirror, which operates in combination with the microlenses to achieve point imaging performance substantially free of geometric and chromatic aberration. Similarly, a holographic EUV lithography stepper can use a diffractive photomask in conjunction with a diffractive projection mirror to achieve substantially aberration-free, full-field imaging performance for high-throughput, mask-projection lithography. Maskless and holographic EUV lithography can both be implemented at the industry-standard 13.5-nm wavelength, and could potentially be adapted for operation at a 6.7-nm wavelength.

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