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1. 发明授权

US10177279B2 Light-emitting diode with multiple N contact structure 有权
公开(公告)号：US10177279B2
公开(公告)日：2019-01-08
申请号：US15608141
申请日：2017-05-30
申请人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
发明人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
IPC分类号： H01L33/10 , H01L33/38 , H01L33/24
摘要： Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

2. 发明申请

US20170352784A1 LIGHT-EMITTING DIODE WITH MULTIPLE N CONTACT STRUCTURE 审中-公开
公开(公告)号：US20170352784A1
公开(公告)日：2017-12-07
申请号：US15608141
申请日：2017-05-30
申请人： Tae Yeon SEONG , Ki Seok KIM , Junyong JIN
发明人： Tae Yeon SEONG , Ki Seok KIM , Junyong JIN
IPC分类号： H01L33/32 , H01L33/38 , H01L33/00 , H01L33/10
CPC分类号： H01L33/382 , H01L33/10 , H01L33/24 , H01L2933/0016
摘要： Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

3. 发明授权

US09034676B2 Method of fabricating vertical type light-emitting diode and method of separating layers from each other 有权
标题翻译：制造垂直型发光二极管的方法和将层分离的方法
公开(公告)号：US09034676B2
公开(公告)日：2015-05-19
申请号：US13696490
申请日：2010-07-22
申请人： Ki-Seok Kim , Gun-Young Jung
发明人： Ki-Seok Kim , Gun-Young Jung
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079
摘要： The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation. The formation of the crystalline rods is achieved by the formation of a seed layer and selective growth based on the seed layer.
摘要翻译：本发明提供一种垂直型发光二极管的制造方法和将层分离的方法。结晶棒设置在下层或下基板上。结晶棒包含ZnO。在结晶棒上形成发光二极管或发光二极管结构的层，并将下基板分离。结晶棒在分离过程中溶解。结晶棒的形成通过形成种子层和基于种子层的选择性生长来实现。

4. 发明申请

US20140367720A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140367720A1
公开(公告)日：2014-12-18
申请号：US14300642
申请日：2014-06-10
申请人： Ki Seok KIM , Sang Seok LEE , Su Yeol LEE , Chan Mook LIM
发明人： Ki Seok KIM , Sang Seok LEE , Su Yeol LEE , Chan Mook LIM
IPC分类号： H01L33/42 , H01L33/40
CPC分类号： H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.
摘要翻译：提供半导体发光器件和制造半导体发光器件的方法。半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。该器件还可以包括连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极，并且具有在一个方向上从焊盘区域延伸的焊盘区域和手指区域。第二电极可以包括位于第二导电类型半导体层上并且包括其中的至少一个开口的透明电极部分，至少一个反射部分与开口内的透明电极部分间隔开并且设置在焊盘区域中，并且指状区域以及位于所述反射部分的至少一部分上并且包括在所述手指区域中彼此间隔开的多个接合指状部分的接合部分和设置在所述焊盘区域中的接合焊盘部分。

5. 发明授权

US08877542B2 Nanostructure array substrate, method for fabricating the same and dye-sensitized solar cell using the same 有权
标题翻译：纳米结构阵列基板，其制造方法和使用其的染料敏化太阳能电池
公开(公告)号：US08877542B2
公开(公告)日：2014-11-04
申请号：US13325505
申请日：2011-12-14
申请人： Gun Young Jung , Hui Song , Ki Seok Kim
发明人： Gun Young Jung , Hui Song , Ki Seok Kim
IPC分类号： H01L31/18 , H01M14/00 , H01G9/20
CPC分类号： H01M14/005 , H01G9/2031 , H01G9/2036 , H01G9/204 , Y02E10/542
摘要： Disclosed are a nanostructure array substrate, a method for fabricating the same, and a dye-sensitized solar cell by using the same. The nanostructure array substrate includes a plurality of metal oxide nanostructures vertically aligned on the substrate while being separated from each other. The metal oxide nanostructures include nanorods having a ZnO core/TiO2 shell structure or TiO2 nanotubes. The method includes the steps of forming ZnO nanorods vertically aligned from a seed layer formed on a substrate; and coating a TiO2 sol on the ZnO nanorods and sintering the ZnO nanorods to form nanorods having a ZnO core/TiO2 shell structure. The transparency and flexibility of the substrate are ensured. The photoelectric conversion efficiency of the solar cell is improved if the nanostructure array substrate is employed in the photo electrode of the dye-sensitized solar cell.
摘要翻译：公开了纳米结构阵列基板，其制造方法和使用该染料敏化太阳能电池的染料敏化太阳能电池。纳米结构阵列衬底包括在衬底上垂直对准的多个金属氧化物纳米结构，同时彼此分离。金属氧化物纳米结构包括具有ZnO核/ TiO 2壳结构或TiO 2纳米管的纳米棒。该方法包括以下步骤：从形成在衬底上的晶种层垂直取向的ZnO纳米棒; 并在ZnO纳米棒上涂覆TiO 2溶胶并烧结ZnO纳米棒以形成具有ZnO核/ TiO2壳结构的纳米棒。确保了基材的透明性和柔韧性。如果在染料敏化太阳能电池的光电极中使用纳米结构阵列基板，则太阳能电池的光电转换效率得到改善。

6. 发明授权

US08637186B2 Electrode for battery and method for manufacturing thereof 失效
标题翻译：电池用电极及其制造方法
公开(公告)号：US08637186B2
公开(公告)日：2014-01-28
申请号：US13326796
申请日：2011-12-15
申请人： Won-Bae Kim , Gun-Young Jung , Sang-Hoon Nam , Ki-Seok Kim
发明人： Won-Bae Kim , Gun-Young Jung , Sang-Hoon Nam , Ki-Seok Kim
IPC分类号： H01M4/00
CPC分类号： H01M4/0492 , B82Y30/00 , H01B1/122 , H01M4/386 , H01M10/052
摘要： An electrode for a battery and a method for manufacturing the same are disclosed. The electrode for a battery according to the present invention comprising silicon nanostructures integrally formed on a silicon thin film and having a period array can reduce the internal resistance, have better charge transport properties, and reduce the structural stress, thereby exhibiting high storage capacity, high efficiency charge/discharge characteristics, and long charge/discharge cycle characteristics. Moreover, the method for manufacturing the electrode for a battery according to the present invention can simply and easily form a nanopattern with nanostructures on a silicon thin film using laser interference lithography (LIL) and dry etching.
摘要翻译：公开了一种电池用电极及其制造方法。根据本发明的电池用电极，其一体形成在硅薄膜上并具有周期阵列的硅纳米结构体可以降低内阻，具有更好的电荷传输性能，并且降低结构应力，从而表现出高存储容量，高效率充放电特性，长充电/放电循环特性。此外，根据本发明的电池用电极的制造方法可以简单且容易地使用激光干涉光刻（LIL）和干蚀刻在硅薄膜上形成具有纳米结构的纳米图案。

7. 发明授权

US08510362B2 Apparatus and method for variable fast fourier transform 有权
标题翻译：用于可变快速傅里叶变换的装置和方法
公开(公告)号：US08510362B2
公开(公告)日：2013-08-13
申请号：US12517781
申请日：2007-06-18
申请人： Young-Jin Moon , Hyun-Jae Kim , Ki-Seok Kim , Young-II Kim
发明人： Young-Jin Moon , Hyun-Jae Kim , Ki-Seok Kim , Young-II Kim
IPC分类号： G06F17/14
CPC分类号： G06F17/142
摘要： The present invention relates to an apparatus and method for variable fast Fourier transform. According to an embodiment of the present invention, two n-point fast Fourier transform (FFT) processors are used to generate two n-point FFT output data or one 2n-point FFT output data. The one 2n-point input data is alternately input to the two n-point FFT processors. Each of the two n-point FFT processors selects a twiddle factor for the n-point input data or the 2n-point input data and performs fast Fourier transform. A butterfly operation is performed on signals obtained by performing fast Fourier transform on the 2n-point input data signal, and the processed signals are aligned in an output order. According to this structure, it is possible to realize a fast Fourier transform hardware engine that selectively performs multi-frequency allocation in a base station system that supports the multi-frequency allocation.
摘要翻译：本发明涉及一种用于可变快速傅里叶变换的装置和方法。根据本发明的实施例，使用两个n点快速傅里叶变换（FFT）处理器来产生两个n点FFT输出数据或一个2n点FFT输出数据。一个2n点输入数据交替地输入到两个n点FFT处理器。两个n点FFT处理器中的每一个为n点输入数据或2n点输入数据选择旋转因子，并执行快速傅里叶变换。对通过对2n点输入数据信号执行快速傅里叶变换获得的信号执行蝶形运算，并且处理的信号以输出顺序对准。根据该结构，能够实现在支持多频分配的基站系统中选择性地进行多频分配的快速傅里叶变换硬件引擎。

8. 发明申请

US20130074923A1 METHOD FOR PRODUCING ZINC-OXIDE NANOSTRUCTURE ELECTRODES, AND METHOD FOR PRODUCING DYE-SENSITIZED SOLAR CELLS USING SAME 审中-公开
标题翻译：用于生产氧化锌纳米结构电极的方法，以及使用其生产染料敏化太阳能电池的方法
公开(公告)号：US20130074923A1
公开(公告)日：2013-03-28
申请号：US13701714
申请日：2011-07-13
申请人： Gun-Young Jung , Ki-Seok Kim , Jin-Ju Kim
发明人： Gun-Young Jung , Ki-Seok Kim , Jin-Ju Kim
IPC分类号： H01L31/18 , H01L31/0224
CPC分类号： H01L31/1884 , B82Y30/00 , B82Y99/00 , H01G9/204 , H01G9/2059 , H01L31/022483 , Y02E10/542 , Y02P70/521 , Y10S977/948
摘要： Provided are a method of preparing a zinc oxide nanostructure electrode and a method of preparing a dye-sensitized solar cell using the same. According to the present invention, the method of preparing a zinc oxide nanostructure electrode may include sequentially forming a superhydrophobic self-assembled layer and a zinc layer on a carrier substrate having a stamp pattern included therein, disposing the zinc layer on the carrier to face a first substrate and performing a stamp method to form at least one zinc pattern on the first substrate, oxidizing the zinc pattern to form zinc oxide seeds, and growing at least one zinc oxide nanostructure from the zinc oxide seeds by using a hydrothermal synthesis method to form a zinc oxide nanostructure electrode composed of the at least one zinc oxide nanostructure.
摘要翻译：提供制备氧化锌纳米结构电极的方法和使用其制备染料敏化太阳能电池的方法。根据本发明，制备氧化锌纳米结构电极的方法可以包括在其上包含印模图案的载体基底上顺序形成超疏水自组装层和锌层，将锌层设置在载体上以面对在第一基板上形成至少一个锌图案的印模方法，氧化锌图案以形成氧化锌晶种，并且通过使用水热合成方法从氧化锌晶种生长至少一种氧化锌纳米结构物以形成由所述至少一种氧化锌纳米结构构成的氧化锌纳米结构电极。

9. 发明授权

US08194804B2 Apparatus and method for automatic gain control of mobile station in OFDM system 有权
标题翻译： OFDM系统中移动台自动增益控制的装置及方法
公开(公告)号：US08194804B2
公开(公告)日：2012-06-05
申请号：US12088262
申请日：2006-09-29
申请人： Ki-Seok Kim , Young-Il Kim
发明人： Ki-Seok Kim , Young-Il Kim
IPC分类号： H04L27/08
CPC分类号： H04L27/2647 , H04L27/261 , H04L27/3809
摘要： An automatic gain control apparatus and method of a mobile station in an OFDM system are provided. The method includes identifying a preamble section and a data symbol section in a received frame signal; when a current symbol is the preamble section, measuring a power value of a preamble signal, comparing the measured power value of the preamble signal and a threshold value, and amplifying the received frame signal based on a predetermined gain; when a data symbol section includes a pilot carrier, measuring an average power value of the pilot carrier in the data symbol, comparing the measured average power value and the threshold value, and amplifying the received frame signal based on a predetermined gain; and when the data symbol section includes no pilot carrier, maintaining an existing gain, or performing an automatic gain control operation according to a gain estimated by using the pilot carrier during the data symbol section.
摘要翻译：提供了OFDM系统中的移动台的自动增益控制装置和方法。该方法包括在接收到的帧信号中识别前导码部分和数据符号部分; 当当前符号是前导码部分时，测量前同步信号的功率值，比较前导信号的测量功率值和阈值，并根据预定增益放大接收到的帧信号; 当数据符号部分包括导频载波时，测量数据符号中的导频载波的平均功率值，比较测得的平均功率值和阈值，并根据预定增益放大接收到的帧信号; 并且当数据符号部分不包括导频载波，维持现有增益时，或者根据在数据符号部分期间使用导频载波估计的增益执行自动增益控制操作。

10. 发明申请

US20100254270A1 SIGNAL TRANSMITTING APPARATUS AND SIGNAL TRANSMITTING METHOD 有权
标题翻译：信号发送装置和信号发送方法
公开(公告)号：US20100254270A1
公开(公告)日：2010-10-07
申请号：US12735075
申请日：2008-07-11
申请人： Seok-Jin Lee , Ki Seok Kim , Young-II Kim
发明人： Seok-Jin Lee , Ki Seok Kim , Young-II Kim
IPC分类号： H04L12/26
CPC分类号： G06F13/1689
摘要： A signal transmitting apparatus includes: a plurality of data transmission lines that transmit output data to a memory; a plurality of delay units that are correspondingly connected to the plurality of data transmission lines, that delay test data according to a delay signal for a predetermined time, and that output the delayed test data to each of the data transmission lines; and a transmitting/receiving controller that compares the stored data in the memory with the test data to adjust the delay signal, and that outputs the adjusted delay signal to each of the plurality of delay units. With this configuration, when data is transmitted to a memory through a data bus, a delay value can be adjusted among a plurality of signal lines constituting a data bus, and thus signal transmission can be performed uniformly.
摘要翻译：信号发送装置包括：将输出数据发送到存储器的多条数据传输线; 多个延迟单元，其相应地连接到所述多个数据传输线，其根据延迟信号将测试数据延迟预定时间，并且将延迟的测试数据输出到每个数据传输线; 以及发送/接收控制器，其将存储器中存储的数据与测试数据进行比较，以调整延迟信号，并将经调整的延迟信号输出到多个延迟单元中的每一个。利用这种配置，当通过数据总线将数据发送到存储器时，可以在构成数据总线的多个信号线之间调整延迟值，从而可以均匀地执行信号传输。

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