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1. 发明申请

US20110294259A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件，其制造方法和使用非易失性存储元件的非易失性半导体器件
公开(公告)号：US20110294259A1
公开(公告)日：2011-12-01
申请号：US13205408
申请日：2011-08-08
申请人： Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L21/36
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

2. 发明授权

US07826247B2 Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor 有权
标题翻译：用于初始化电阻变化材料的方法，包含电阻变化材料的存储器件，以及用于初始化包含可变电阻器的非易失性存储器电路的方法
公开(公告)号：US07826247B2
公开(公告)日：2010-11-02
申请号：US12078385
申请日：2008-03-31
申请人： Shunsaku Muraoka , Koichi Osano , Ken Takahashi , Masafumi Shimotashiro
发明人： Shunsaku Muraoka , Koichi Osano , Ken Takahashi , Masafumi Shimotashiro
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C13/0069 , G11C2013/0083 , G11C2013/0092 , G11C2213/31
摘要： An initialization method of the present invention is a method for initializing a material (variable-resistance material) (2) whose resistance value increases/decreases according to the polarity of an applied electric pulse. An electric pulse having a first polarity is applied at least once between first and second electrodes (1, 3) connected to the variable-resistance material (2) such that the potential of the first electrode is higher than that of the second electrode.
摘要翻译：本发明的初始化方法是用于初始化电阻值根据所施加的电脉冲的极性而增加/减小的材料（可变电阻材料）（2）的方法。具有第一极性的电脉冲在与可变电阻材料（2）连接的第一和第二电极（1,3）之间至少施加一次，使得第一电极的电位高于第二电极的电位。

3. 发明授权

US07714311B2 Memory device, memory circuit and semiconductor integrated circuit having variable resistance 有权
标题翻译：存储器件，存储器电路和具有可变电阻的半导体集成电路
公开(公告)号：US07714311B2
公开(公告)日：2010-05-11
申请号：US12266818
申请日：2008-11-07
申请人： Shunsaku Muraoka , Koichi Osano , Ken Takahashi , Masafumi Shimotashiro
发明人： Shunsaku Muraoka , Koichi Osano , Ken Takahashi , Masafumi Shimotashiro
IPC分类号： H01L27/105
CPC分类号： H01L27/2436 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0083 , G11C2213/31 , G11C2213/75 , G11C2213/78 , G11C2213/79 , H01L27/2463 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the third terminal (9). A second variable resistor (6) is connected between the third terminal (9) and a second terminal (8) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the third terminal (9) and the second terminal (8). Given pulse voltages are applied between the first terminal (7) and the third terminal (9) and between the third terminal (9) and the second terminal (8) to reversibly change the resistance values of the first and second variable resistors (5, 6), thereby recording one bit or multiple bits of information.
摘要翻译：第一可变电阻器（5）连接在第一端子（7）和第三端子（9）之间，并且根据施加在第一端子（7）和第三端子（7）之间的脉冲电压的极性来增大/减小其电阻值终端（9）。第二可变电阻器（6）连接在第三端子（9）和第二端子（8）之间，并根据在第三端子（9）和第二端子（8）之间施加的脉冲电压的极性来增大/减小其电阻值端子（8）。给定脉冲电压施加在第一端子（7）和第三端子（9）之间以及第三端子（9）和第二端子（8）之间，以可逆地改变第一和第二可变电阻器（5， 6），从而记录一位或多位信息。

4. 发明申请

US20090321709A1 MEMORY ELEMENT, MEMORY APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：存储元件，存储器和半导体集成电路
公开(公告)号：US20090321709A1
公开(公告)日：2009-12-31
申请号：US12376256
申请日：2007-08-17
申请人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
发明人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , G11C2213/32 , G11C2213/55 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/1683
摘要： A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.
摘要翻译：存储元件包括第一电极，第二电极和电阻可变膜2，电阻可变膜2设置在与第一和第二电极连接的第一和第二电极之间，电阻变化膜2的电阻值基于电压变化电阻可变膜2包括由Fe 3 O 4制成的层2a和由Fe 2 O 3制成的层2b或以MFe 2 O 4表示的尖晶石结构氧化物（M：除了Fe之外的金属元素）; 由Fe 3 O 4制成的层2a比由Fe 2 O 3或尖晶石结构氧化物制成的层2b厚。

5. 发明授权

US06433958B1 Magnetic head, method for producing the same, video recording and reproduction apparatus including the magnetic head, and video camera including the magnetic head 失效
公开(公告)号：US06433958B1
公开(公告)日：2002-08-13
申请号：US09625687
申请日：2000-07-26
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Hiroshi Sakakima , Koichi Osano , Eisuke Sawai
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Hiroshi Sakakima , Koichi Osano , Eisuke Sawai
IPC分类号： G11B5235
CPC分类号： G11B5/1276 , G11B5/0086 , G11B5/1878 , G11B5/40 , G11B31/006 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49055
摘要： A magnetic head includes a pair of magnetic core halves; and a nonmagnetic layer provided between the pair of magnetic core halves for combining the pair of magnetic core halves. The pair of magnetic core halves each includes an oxide magnetic base, at least one underlying layer provided on the oxide magnetic base, and a metal magnetic thin film provided between the underlying film and the nonmagnetic layer. The metal magnetic thin film includes a magnetic film containing, as a major material, magnetic crystalline particles having an average volume Va and an average surface area Sa fulfilling the relationship of Sa>about 4.84 Va⅔. At least one of the pair of magnetic core halves has a winding window therein. The metal magnetic thin film is provided in such a manner as to prevent the oxide magnetic base from cracking due to an internal stress generated in the metal magnetic thin film.

6. 发明授权

US6072667A Method and apparatus for analysis of magnetic characteristics of magnetic device, magnetic head, and magnetic recording and reproducing apparatus 失效
标题翻译：用于分析磁性装置，磁头和磁记录和再现装置的磁特性的方法和装置
公开(公告)号：US6072667A
公开(公告)日：2000-06-06
申请号：US715774
申请日：1996-09-19
申请人： Yoshiaki Mizoh , Koichi Osano , Masaya Sakaguchi
发明人： Yoshiaki Mizoh , Koichi Osano , Masaya Sakaguchi
IPC分类号： G01R33/12 , G11B5/00 , G11B5/008 , G11B5/127 , G11B5/133 , G11B5/455 , G11B5/53 , G11B11/105 , G11B5/235
CPC分类号： G11B5/133 , G01R33/12 , G11B5/00 , G11B5/127 , G11B5/455 , G11B11/10534 , G11B5/0086 , G11B5/53
摘要： A method and apparatus for analysis of magnetic characteristics of a magnetic device used for designing a magnetic head. The magnetic head has recording and reproducing characteristics and a recording and reproducing apparatus of magnetic characteristics. The apparatus for analysis of magnetic characteristics includes a data input part, a coupled analysis part, and a result output part. The data input part is provided with data related to the characteristics of substances composing the magnetic device, data related to the magnetic device divided into a plurality of parts, data concerning the boundary conditions for analysis of the magnetic device, and data concerning the boundary conditions for analysis of the magnetic field. In the analysis part, a stress distribution for each of the plurality of parts divided on the basis of the data related to the boundary conditions input from the data input part is obtained, and magnetic characteristics for each of the plurality of parts based on the data concerning the boundary conditions of the magnetic field and the stress distribution of the magnetic device are obtained, and magnetic characteristics of the whole magnetic device are obtained based on the magnetic characteristics of each of the plurality of parts.
摘要翻译：用于分析用于设计磁头的磁性装置的磁特性的方法和装置。磁头具有记录和再现特性以及磁特性的记录和再现装置。用于分析磁特性的装置包括数据输入部分，耦合分析部分和结果输出部分。数据输入部具备与构成磁性装置的物质的特性相关的数据，与分割为多个部分的磁性装置有关的数据，关于磁性装置分析的边界条件的数据，以及关于边界条件的数据用于分析磁场。在分析部分中，基于与从数据输入部输入的边界条件相关的数据而分割的多个部分中的每一个的应力分布被获得，并且基于数据获得多个部分中的每一个的磁特性获得关于磁场的边界条件和磁性装置的应力分布的磁特性，并且基于多个部分的磁特性获得整个磁性装置的磁特性。

7. 发明授权

US5403457A Method for making soft magnetic film 失效
标题翻译：制造软磁膜的方法
公开(公告)号：US5403457A
公开(公告)日：1995-04-04
申请号：US111055
申请日：1993-08-24
申请人： Kumio Nago , Isamu Aokura , Hitoshi Yamanishi , Koichi Osano , Hiroshi Sakakima , Toshiyuki Suemitsu
发明人： Kumio Nago , Isamu Aokura , Hitoshi Yamanishi , Koichi Osano , Hiroshi Sakakima , Toshiyuki Suemitsu
IPC分类号： G11B5/147 , H01F41/18 , H01F41/30 , C23C14/35 , G11B5/127
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/147 , H01F41/18 , H01F41/302 , Y10T29/49034
摘要： The method of the invention provides a soft magnetic film having a high saturation magnetic flux density and an anisotropy of high magnetic permeability suitable for use in various types of magnetic heads at a high production yield by use of a sputtering apparatus provided with a sputtering electrode, which has permanent magnets arranged above a target 1 mainly of Fe or Co in such a way that lines of magnetic force 3 generated by said permanent magnets are in parallel to the surface of said target 1 and to the center line of said target 1 and have a magnetic strength pattern symmetric with respect to said center line while the lines of magnetic force to the right of said center line are of a reverse direction to those to the left of said center line.
摘要翻译：本发明的方法通过使用具有溅射电极的溅射装置，提供了一种具有高饱和磁通密度和高磁导率的各向异性的软磁性膜，其适用于各种类型的磁头，以高产率生产，其具有主要以Fe或Co布置在目标1上方的永磁体，使得由所述永磁体产生的磁力线3平行于所述目标1的表面和所述目标1的中心线并且具有相对于所述中心线对称的磁强度图案，而所述中心线右侧的磁力线与所述中心线左侧的磁力线相反。

8. 发明授权

US5084795A Magnetic head and method of manufacturing the same 失效
公开(公告)号：US5084795A
公开(公告)日：1992-01-28
申请号：US475209
申请日：1990-02-05
申请人： Hiroshi Sakakima , Keita Ihara , Koichi Osano
发明人： Hiroshi Sakakima , Keita Ihara , Koichi Osano
IPC分类号： G11B5/187
CPC分类号： G11B5/1878
摘要： A metal-in-gap type magnetic head having a small undulation of reproduction output caused by a pseudo-gap and method of manufacture thereof are provided, wherein the magnetic head employs as a back core a ferrite (particularly, a ferrite containing Sn) and employs in a metal portion which constitutes a front core an alloy film (particularly, a composition transition alloy film) having a composition expressed by T-M-X-N, where T is at least one metal element selected from a group consisting of Fe, Co and Ni, M is at least one metal element selected from a group consisting of Nb, Zr, Ti, Ta, Hf, Cr, Mo, W and Mn, X is at least one metalloid element selected from a group consisting of B, Si and Ge, and N is nitrogen.

9. 发明授权

US08445319B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权
标题翻译：非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
公开(公告)号：US08445319B2
公开(公告)日：2013-05-21
申请号：US13205408
申请日：2011-08-08
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

10. 发明授权

US07964869B2 Memory element, memory apparatus, and semiconductor integrated circuit 有权
标题翻译：存储元件，存储器件和半导体集成电路
公开(公告)号：US07964869B2
公开(公告)日：2011-06-21
申请号：US12376256
申请日：2007-08-17
申请人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
发明人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
IPC分类号： H01L29/10
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , G11C2213/32 , G11C2213/55 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/1683
摘要： A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.
摘要翻译：存储元件包括第一电极，第二电极和电阻可变膜2，电阻可变膜2设置在与第一和第二电极连接的第一和第二电极之间，电阻变化膜2的电阻值基于电压变化电阻可变膜2包括由Fe 3 O 4制成的层2a和由Fe 2 O 3制成的层2b或以MFe 2 O 4表示的尖晶石结构氧化物（M：除了Fe之外的金属元素）; 由Fe 3 O 4制成的层2a比由Fe 2 O 3或尖晶石结构氧化物制成的层2b厚。

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