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    • 1. 发明申请
    • Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers
    • 多区域感应加热用于改善MOCVD和HVPE室中的温度均匀性
    • US20110259879A1
    • 2011-10-27
    • US13092800
    • 2011-04-22
    • Hiroji HanawaKyawwin Jason MaungKarl Brown
    • Hiroji HanawaKyawwin Jason MaungKarl Brown
    • H05B6/10C23C16/458C30B35/00C23C16/46
    • H05B6/105C23C16/4584C23C16/46C30B25/10
    • Embodiments of the invention generally relate to apparatuses and methods for utilizing a plurality of induction heat sources to uniformly heat a plurality of substrates within a processing chamber. By utilizing multiple heating zones that are each separately powered, the temperature distribution across the susceptor, over which the substrates rotate, may be uniform. The heat sources may be disposed outside of the processing chamber. In one embodiment, a processing chamber is provided which includes a susceptor disposed adjacent a first side of a window, a substrate carrier coupled with the susceptor, an inner inductive heating element disposed adjacent a second side of the window opposite the first side, an outer inductive heating element separate from and encompassing the inner inductive heating element and disposed adjacent to the second side of the window, and a parasitic load ring positioned below the outer inductive heating element.
    • 本发明的实施例一般涉及利用多个感应热源来均匀加热处理室内的多个基板的装置和方法。 通过利用各自分别供电的多​​个加热区,基板旋转的基座上的温度分布可以是均匀的。 热源可以设置在处理室的外部。 在一个实施例中,提供了处理室,其包括邻近窗口的第一侧设置的基座,与基座耦合的基板载体,与第一侧相对的第二侧附近设置的内部感应加热元件, 感应加热元件与内部感应加热元件分离并且包围内部感应加热元件并且邻近窗口的第二侧设置,以及位于外部感应加热元件下方的寄生负载环。
    • 3. 发明授权
    • Radiation heating efficiency by increasing optical absorption of a silicon containing material
    • 通过增加含硅材料的光吸收来实现辐射加热效率
    • US08455374B2
    • 2013-06-04
    • US13093584
    • 2011-04-25
    • Hiroji HanawaKyawwin Jason Maung
    • Hiroji HanawaKyawwin Jason Maung
    • H01L21/00
    • H01L21/67115H01L21/68771
    • Embodiments of the present invention generally provide a process and apparatus for increasing the absorption coefficient of a chamber component disposed in a thermal process chamber. In one embodiment, a method generally includes providing a substrate carrier having a first surface and a second surface, the first surface is configured to support a substrate and being parallel and opposite to the second surface, subjecting the second surface of the substrate carrier to a surface treatment process to roughen the second surface of the substrate carrier, wherein the substrate carrier contains a material comprising silicon carbide, and forming an oxide-containing layer on the roughened second surface of the substrate carrier. The formed oxide-containing layer has optical absorption properties at wavelengths close to the radiation delivered from one or more energy sources used to heat the chamber component.
    • 本发明的实施例通常提供一种用于增加设置在热处理室中的腔室部件的吸收系数的方法和装置。 在一个实施例中,一种方法通常包括提供具有第一表面和第二表面的衬底载体,所述第一表面被配置为支撑衬底并且与第二表面平行且相对,使衬底载体的第二表面经受 使基底载体的第二表面粗糙化的表面处理工艺,其中基底载体含有包含碳化硅的材料,并在基底载体的粗糙化的第二表面上形成含氧化物层。 形成的含氧化物层在接近从用于加热室部件的一个或多个能量源递送的辐射的波长处具有光学吸收特性。
    • 4. 发明申请
    • RADIATION HEATING EFFICIENCY BY INCREASING OPTICAL ABSORPTION OF A SILICON CONTAINING MATERIAL
    • 通过增加光学吸收含硅材料的辐射加热效率
    • US20110272709A1
    • 2011-11-10
    • US13093584
    • 2011-04-25
    • HIROJI HANAWAKyawwin Jason Maung
    • HIROJI HANAWAKyawwin Jason Maung
    • H01L33/60
    • H01L21/67115H01L21/68771
    • Embodiments of the present invention generally provide a process and apparatus for increasing the absorption coefficient of a chamber component disposed in a thermal process chamber. In one embodiment, a method generally includes providing a substrate carrier having a first surface and a second surface, the first surface is configured to support a substrate and being parallel and opposite to the second surface, subjecting the second surface of the substrate carrier to a surface treatment process to roughen the second surface of the substrate carrier, wherein the substrate carrier contains a material comprising silicon carbide, and forming an oxide-containing layer on the roughened second surface of the substrate carrier. The formed oxide-containing layer has optical absorption properties at wavelengths close to the radiation delivered from one or more energy sources used to heat the chamber component.
    • 本发明的实施例通常提供一种用于增加设置在热处理室中的腔室部件的吸收系数的方法和装置。 在一个实施例中,一种方法通常包括提供具有第一表面和第二表面的衬底载体,所述第一表面被配置为支撑衬底并且与第二表面平行且相对,使衬底载体的第二表面经受 使基底载体的第二表面粗糙化的表面处理工艺,其中基底载体含有包含碳化硅的材料,并在基底载体的粗糙化的第二表面上形成含氧化物层。 形成的含氧化物层在接近从用于加热室部件的一个或多个能量源递送的辐射的波长处具有光学吸收特性。