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1. 发明授权

US08324689B2 Self aligned field effect transistor structure 有权
标题翻译：自对准场效应晶体管结构
公开(公告)号：US08324689B2
公开(公告)日：2012-12-04
申请号：US12635661
申请日：2009-12-10
申请人： Lee-Mi Do , Kyu-Ha Baek
发明人： Lee-Mi Do , Kyu-Ha Baek
IPC分类号： H01L29/66
CPC分类号： H01L29/785 , H01L27/1292 , H01L29/41791 , H01L29/66795 , H01L51/0554
摘要： Provided is a self aligned field effect transistor structure. The self aligned field effect transistor structure includes: an active region pattern on a substrate; a first gate electrode and a second gate electrode facing each other with the active region pattern therebetween; and a source electrode and a drain electrode connected to the active region pattern and disposed to be symmetric with respect to a line connecting the first and second gate electrodes, wherein the first and second gate electrodes and the source and drain electrodes are disposed on the same plane of the substrate.
摘要翻译：提供了自对准场效应晶体管结构。自对准场效应晶体管结构包括：衬底上的有源区图案; 第一栅极电极和第二栅极电极，其间具有有源区域图案; 以及源极电极和漏电极，连接到有源区域图案并且被设置为相对于连接第一和第二栅电极的线对称，其中第一和第二栅电极以及源电极和漏极彼此配置基板的平面。

2. 发明申请

US20120140350A1 PRINTING PLATE AND MIRROR THEREOF 有权
标题翻译：印版及其镜像
公开(公告)号：US20120140350A1
公开(公告)日：2012-06-07
申请号：US13300689
申请日：2011-11-21
申请人： Joo Yeon Kim , Kyu-Ha Baek , Lee Mi Do , Ji Man Park , Kunsik Park , Zin Sig Kim , Dong-Pyo Kim , Ye Sul Jeong
发明人： Joo Yeon Kim , Kyu-Ha Baek , Lee Mi Do , Ji Man Park , Kunsik Park , Zin Sig Kim , Dong-Pyo Kim , Ye Sul Jeong
IPC分类号： B41N1/12 , G02B5/08 , B23P17/00
CPC分类号： B41N1/00 , B29D11/00596 , G02B5/0816 , Y10T29/49
摘要： Disclosed are a printing plate and a mirror thereof, the printing plate including: printing portions for transferring an immersed solution, the printing portions being formed flat and arranged at regular intervals on one side of an upper part of the printing plate; and non-printing portions corresponding to a remaining area other than the printing portions, the non-printing portions being formed with at least two concavities and convexities respectively and arranged at regular intervals on the other side of the upper part of the printing plate.
摘要翻译：公开了一种印版及其反射镜，印版包括：用于转印浸液的印刷部分，印刷部分在印版的上部一侧上以规则的间隔形成为平坦的; 以及对应于除了印刷部分之外的其余区域的非印刷部分，非印刷部分分别形成有至少两个凹凸，并且在印版的上部的另一侧上以规则的间隔布置。

3. 发明申请

US20120137907A1 INTAGLIO PRINTING PLATE INCLUDING SUPPLEMENTARY PATTERN AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：包括补充图案的INTLLIO印刷版及其制作方法
公开(公告)号：US20120137907A1
公开(公告)日：2012-06-07
申请号：US13310551
申请日：2011-12-02
申请人： Ye Sul JEONG , Kyu-Ha Baek , Lee-Mi Do , Ji Man Park , Kunsik Park , Dong-Pyo Kim , Zin Sig Kim , Joo Yeon Kim
发明人： Ye Sul JEONG , Kyu-Ha Baek , Lee-Mi Do , Ji Man Park , Kunsik Park , Dong-Pyo Kim , Zin Sig Kim , Joo Yeon Kim
IPC分类号： B41N1/06
CPC分类号： B41N1/00 , B41M1/10 , B41N1/06
摘要： Disclosed is an intaglio printing plate including: a pattern portion where a to-be-printed pattern is located; a non-pattern portion corresponding to a remaining area other than the pattern portion; and a supplementary pattern portion having a repetitive pattern with a predetermined form, wherein at least a part of the pattern portion is divided by a pattern structure that is formed by the supplementary pattern portion.
摘要翻译：公开了一种凹版印刷版，其包括：图案部分，其中定位有待印刷图案; 对应于图案部分以外的剩余区域的非图案部分; 以及具有预定形式的重复图案的辅助图案部分，其中图案部分的至少一部分被由辅助图案部分形成的图案结构划分。

4. 发明授权

US08058115B2 Method of fabricating organic thin film transistor using surface energy control 有权
标题翻译：使用表面能量控制制造有机薄膜晶体管的方法
公开(公告)号：US08058115B2
公开(公告)日：2011-11-15
申请号：US12435721
申请日：2009-05-05
申请人： Lee-Mi Do , Kyu-Ha Baek
发明人： Lee-Mi Do , Kyu-Ha Baek
IPC分类号： H01L21/00
CPC分类号： H01L51/0558 , H01L51/0036 , H01L51/0533 , H01L51/0545
摘要： Provided is a method of fabricating an organic thin film transistor (OTFT) using surface energy control. The method changes a polarity of a gate insulating layer to a polarity of a semiconductor channel layer to be formed on the gate insulating layer by controlling surface energy of the gate insulating layer, thereby promoting growth of the semiconductor channel layer on the gate insulating layer. According to the method, the interface characteristics between the gate insulating layer and the semiconductor channel layer are improved, and thus it is possible to implement an OTFT that can minimize leakage current and has high field effect mobility and low turn-on voltage.
摘要翻译：提供了使用表面能控制制造有机薄膜晶体管（OTFT）的方法。该方法通过控制栅极绝缘层的表面能来改变栅极绝缘层的极性，使其在栅极绝缘层上形成半导体沟道层的极性，从而促进半导体沟道层在栅极绝缘层上的生长。根据该方法，提高了栅极绝缘层与半导体沟道层之间的界面特性，因此可以实现能够使漏电流最小化且具有高场效应迁移率和低导通电压的OTFT。

5. 发明授权

US08039294B2 Insulating layer, organic thin film transistor using the insulating layer, and method of fabricating the organic thin film transistor 有权
标题翻译：绝缘层，使用绝缘层的有机薄膜晶体管，以及制造有机薄膜晶体管的方法
公开(公告)号：US08039294B2
公开(公告)日：2011-10-18
申请号：US11782889
申请日：2007-07-25
申请人： Gi Heon Kim , Sung Min Yoon , Kyu Ha Baek , In Kyu You , Seung Youl Kang , Seong Deok Ahn , Kyung Soo Suh
发明人： Gi Heon Kim , Sung Min Yoon , Kyu Ha Baek , In Kyu You , Seung Youl Kang , Seong Deok Ahn , Kyung Soo Suh
IPC分类号： B05D3/00
CPC分类号： H01L21/02118 , C08F120/00 , C08F120/10 , C08F120/44 , H01L21/02164 , H01L21/02186 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/312 , H01L21/31691 , H01L51/0537
摘要： Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
摘要翻译：提供一种绝缘层，其中无机材料被添加到有机聚合物中以提高绝缘性能，使用该绝缘层的有机薄膜晶体管以及制造该有机薄膜晶体管的方法。提供了包含乙烯基聚合物和无机材料的有机薄膜晶体管的绝缘层。这里，乙烯基聚合物与无机材料的重量比可以在1：0.0001〜1:0.5的范围内。因此，可以在低温下制造薄膜，并且还可以制造绝缘层，该绝缘层具有高介电常数，不影响在形成绝缘层期间的以前工艺中形成的其它层。

6. 发明申请

US20110136338A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20110136338A1
公开(公告)日：2011-06-09
申请号：US12689344
申请日：2010-01-19
申请人： Kunsik Park , Kyu-Ha Baek , Lee-Mi Do , Dong-Pyo Kim , Ji Man Park
发明人： Kunsik Park , Kyu-Ha Baek , Lee-Mi Do , Dong-Pyo Kim , Ji Man Park
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L21/2885
摘要： A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where the isolation layer is formed, arranging a solvent, which contains electrically charged metal particles, on the semiconductor substrate where the diffusion barrier layer is formed, and filling the via hole with the metal particles by moving the metal particles using applied external force. The applied external force said includes a voltage causing an electric current to flow between the semiconductor substrate and the solvent, an electrical field applied between the semiconductor substrate and the solvent, or a magnetic field applied between the semiconductor substrate and the solvent.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底中形成通孔，在通孔的内侧形成隔离层，在半导体衬底的上部和通孔的内侧形成扩散阻挡层形成隔离层的孔，在形成有扩散阻挡层的半导体衬底上布置含有带电荷的金属颗粒的溶剂，并通过使用外力移动金属颗粒来填充通孔。所施加的外力包括导致电流在半导体衬底和溶剂之间流动的电压，施加在半导体衬底和溶剂之间的电场或施加在半导体衬底和溶剂之间的磁场。

7. 发明申请

US20100029049A1 METHOD OF FABRICATING ORGANIC THIN FILM TRANSISTOR USING SURFACE ENERGY CONTROL 有权
标题翻译：使用表面能量控制制造有机薄膜晶体管的方法
公开(公告)号：US20100029049A1
公开(公告)日：2010-02-04
申请号：US12435721
申请日：2009-05-05
申请人： Lee-Mi Do , Kyu-Ha Baek
发明人： Lee-Mi Do , Kyu-Ha Baek
IPC分类号： H01L21/336
CPC分类号： H01L51/0558 , H01L51/0036 , H01L51/0533 , H01L51/0545
摘要： Provided is a method of fabricating an organic thin film transistor (OTFT) using surface energy control. The method changes a polarity of a gate insulating layer to a polarity of a semiconductor channel layer to be formed on the gate insulating layer by controlling surface energy of the gate insulating layer, thereby promoting growth of the semiconductor channel layer on the gate insulating layer. According to the method, the interface characteristics between the gate insulating layer and the semiconductor channel layer are improved, and thus it is possible to implement an OTFT that can minimize leakage current and has high field effect mobility and low turn-on voltage.
摘要翻译：提供了使用表面能控制制造有机薄膜晶体管（OTFT）的方法。该方法通过控制栅极绝缘层的表面能来改变栅极绝缘层的极性，使其在栅极绝缘层上形成半导体沟道层的极性，从而促进半导体沟道层在栅极绝缘层上的生长。根据该方法，提高了栅极绝缘层与半导体沟道层之间的界面特性，因此可以实现能够使漏电流最小化且具有高场效应迁移率和低导通电压的OTFT。

8. 发明授权

US07651739B2 Surface treatment method of fiber reinforced plastic substrate 失效
标题翻译：纤维增强塑料基材的表面处理方法
公开(公告)号：US07651739B2
公开(公告)日：2010-01-26
申请号：US11450169
申请日：2006-06-08
申请人： In Kyu You , Seung Youl Kang , Seong Deok Ahn , Gi Heon Kim , Ji Young Oh , Chul Am Kim , Kyu Ha Baek , Kyung Soo Suh
发明人： In Kyu You , Seung Youl Kang , Seong Deok Ahn , Gi Heon Kim , Ji Young Oh , Chul Am Kim , Kyu Ha Baek , Kyung Soo Suh
IPC分类号： B05D3/02 , B05D3/00 , B05D1/18 , B08B3/10
CPC分类号： H01L51/0097 , C08J7/047 , H05K1/0366 , H05K1/0393 , H05K3/386 , H05K2203/0759 , Y02E10/549
摘要： A surface treatment method of an FRP substrate is provided. According to the method, an FRP substrate that is less deformed than a conventional flexible substrate material is used, and surface roughness, which is a drawback of the FRP substrate, is improved so that it may be applied to the fabrication of a device. In order to reduce the surface roughness of an FRP substrate, the FRP substrate is coated with an organic insulating solution and thereby planarized. Due to the reduced deformation and superior flatness, failures occurring due to misalignment in a photolithography process may be prevented.
摘要翻译：提供FRP基板的表面处理方法。根据该方法，使用比常规柔性基板材料变形小的FRP基板，作为FRP基板的缺点的表面粗糙度得到改善，从而可以将其应用于器件的制造。为了降低FRP基板的表面粗糙度，FRP基板被涂覆有机绝缘溶液，由此平坦化。由于减小的变形和优异的平坦度，可以防止由于光刻工艺中的未对准而发生的故障。

9. 发明授权

US07507601B2 Encapsulated organic luminescent display panel and method for manufacturing the same 有权
标题翻译：封装有机发光显示面板及其制造方法
公开(公告)号：US07507601B2
公开(公告)日：2009-03-24
申请号：US11270471
申请日：2005-11-10
申请人： Gi Heon Kim , Sung Min Yoon , In Kyu You , Kyu Ha Baek , Kyung Soo Suh
发明人： Gi Heon Kim , Sung Min Yoon , In Kyu You , Kyu Ha Baek , Kyung Soo Suh
IPC分类号： H01L21/00
CPC分类号： H01L51/5259 , H01L27/322 , H01L51/5036 , H01L51/5246 , H01L51/525
摘要： Provided is a display panel comprised of a white color organic luminescent element and a color filter for full color implementation, wherein a substrate in which an organic luminescent element is formed and a color filter are assembled and fixed to face each other with an adhesive pattern therebetween, and liquid oil is filled between the color filter and the substrate inside of the adhesive pattern so as to block external moisture or oxygen, so that deterioration of luminous characteristics due to the external moisture or oxygen may be prevented by encapsulating the organic luminescent element and the color filter with the liquid oil, which leads to enhance reliability and stability of the element, and also allows the encapsulation process to be performed with relatively simple steps and low cost.
摘要翻译：提供了一种由白色有机发光元件和用于全色实现的滤色器组成的显示面板，其中形成有机发光元件的基板和滤色器以其中的粘合剂图案组装和固定成彼此面对，并且在滤色器和粘合剂图案内部的基板之间填充液体油以阻止外部水分或氧气，从而可以通过封装有机发光元件来防止由于外部水分或氧气引起的发光特性的劣化，以及具有液体油的滤色器，这提高了元件的可靠性和稳定性，并且还允许以相对简单的步骤和低成本执行封装过程。

10. 发明授权

US07482625B2 Composition for thermosetting organic polymeric gate insulating layer and organic thin film transistor using the same 有权
标题翻译：用于热固性有机聚合物栅极绝缘层和使用其的有机薄膜晶体管的组合物
公开(公告)号：US07482625B2
公开(公告)日：2009-01-27
申请号：US11204693
申请日：2005-08-16
申请人： Gi Heon Kim , Sung Min Yoon , In Kyu You , Seung Youl Kang , Seong Deok Ahn , Kyu Ha Baek , Kyung Soo Suh
发明人： Gi Heon Kim , Sung Min Yoon , In Kyu You , Seung Youl Kang , Seong Deok Ahn , Kyu Ha Baek , Kyung Soo Suh
IPC分类号： H01L51/30 , C07C281/06 , C07D251/54
CPC分类号： H01L51/052 , H01L51/0052
摘要： Provided are a composition for thermosetting organic polymeric gate insulating layer and an organic thin film transistor using the same. The composition for thermosetting organic polymeric gate insulating layer contains a thermosetting material in polyvinyl phenol as an organic polymeric gate insulating layer material, to improve a chemical resistance and an insulating property, and an organic thin film transistor includes a thermosetting organic polymeric gate insulating layer formed of the composition. The composition for thermosetting organic polymeric gate insulating layer endows an organic polymer with a thermosetting property, thereby being capable of improving the chemical resistance and the insulating property as well as of forming a layer having a device property improved.
摘要翻译：提供了一种用于热固性有机聚合物栅极绝缘层的组合物和使用该组合物的有机薄膜晶体管。用于热固性有机聚合物栅极绝缘层的组合物包含作为有机聚合物栅极绝缘层材料的聚乙烯苯酚中的热固性材料，以提高耐化学性和绝缘性，并且有机薄膜晶体管包括形成的热固性有机聚合物栅极绝缘层的组成。用于热固性有机聚合物栅极绝缘层的组合物赋予具有热固性的有机聚合物，从而能够提高耐化学性和绝缘性，以及形成具有改进的器件特性的层。

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