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1. 发明申请

US20180277334A1 ABERRATION CORRECTION IN CHARGED PARTICLE SYSTEM 审中-公开
公开(公告)号：US20180277334A1
公开(公告)日：2018-09-27
申请号：US15985763
申请日：2018-05-22
申请人： MAPPER LITHOGRAPHY IP B.V.
发明人： Alexander Hendrik Vincent VAN VEEN , Willem Henk URBANUS , Marco Jan-Jaco WIELAND
IPC分类号： H01J37/153 , H01J37/12 , H01J37/09
CPC分类号： H01J37/153 , H01J37/023 , H01J37/065 , H01J37/09 , H01J37/12 , H01J37/3177 , H01J2237/0213 , H01J2237/0264 , H01J2237/0453 , H01J2237/1207 , H01J2237/1534 , H01J2237/1825 , H01J2237/188 , H01J2237/31774 , H01J2237/31793
摘要： A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.

2. 发明授权

US09773635B2 Device for producing an electron beam 有权
公开(公告)号：US09773635B2
公开(公告)日：2017-09-26
申请号：US14412754
申请日：2013-03-12
申请人： LIMO Patentverwaltung GmbH & Co. KG
发明人： Vitalij Lissotschenko
IPC分类号： H01J29/70 , H01J37/06 , H01J37/147 , H01J37/15 , H01J37/305 , H01J3/30 , H01J29/04 , H01J29/48 , H01J31/00
CPC分类号： H01J29/70 , H01J3/30 , H01J29/04 , H01J29/48 , H01J31/00 , H01J37/06 , H01J37/147 , H01J37/15 , H01J37/305 , H01J2237/0213 , H01J2237/061 , H01J2237/06308
摘要： The invention relates to a device (20) for producing an electron beam (4), which comprises a hot cathode (1), a cathode electrode (2), an anode electrode (3) having an opening (6) through which an electron beam (4) produced by the device can pass, wherein during the operation of the device (20) a voltage for accelerating the electrons exiting from the hot cathode (1) is applied between the cathode electrode (2) and the anode electrode (3), and further comprising deflection means that can deflect the electron beam (4) that has passed through the opening of the anode electrode (3), wherein the deflection means comprise at least one deflection electrode (8, 12), which can reflect the electron beam (4) and/or which comprises a deflection surface (9) that is inclined towards the propagation direction of the electron beam (4).

3. 发明申请

US20160343545A1 Textured Silicon Liners In Substrate Processing Systems 审中-公开
公开(公告)号：US20160343545A1
公开(公告)日：2016-11-24
申请号：US15227298
申请日：2016-08-03
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Julian Blake
IPC分类号： H01J37/32 , C23C14/22 , C23C16/50 , H01J37/317
CPC分类号： H01J37/3244 , C23C14/22 , C23C14/564 , C23C16/4404 , C23C16/50 , H01J37/3171 , H01J37/32477 , H01J2237/0213 , H01J2237/022 , H01J2237/028 , H01J2237/0473 , H01J2237/0475 , H01J2237/057 , H01J2237/1207 , H01J2237/3321 , H01J2237/334
摘要： Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

4. 发明授权

US09373480B2 Charged particle beam device and filter member 有权
标题翻译：带电粒子束装置和过滤元件
公开(公告)号：US09373480B2
公开(公告)日：2016-06-21
申请号：US14782695
申请日：2014-03-05
申请人： Hitachi High-Technologies Corporation
发明人： Shinsuke Kawanishi , Yusuke Ominami , Masahiko Ajima , Hiroyuki Suzuki
IPC分类号： H01J37/16 , H01J37/18 , H01J37/20 , H01J37/02 , H01J37/26
CPC分类号： H01J37/16 , H01J37/026 , H01J37/18 , H01J37/20 , H01J37/26 , H01J2237/0213 , H01J2237/022 , H01J2237/2003 , H01J2237/2006
摘要： In a SEM device which enables observations under an atmospheric pressure, in the event that a diaphragm is damaged during an observation of a sample, air flows into a charged particle optical barrel from the vicinity of the sample, due to the differential pressure between the inside of the charged particle optical barrel under vacuum and the vicinity of the sample under the atmospheric pressure. At this time, the sample may be sucked into the charged particle optical barrel. In this case, a charged particle optical system and a detector are contaminated thereby, which causes performance degradation or failures of the charged particle microscope. For coping therewith, it is necessary to prevent the charged particle optical barrel from being contaminated, without inducing a time lag, with a simple structure. In a charged particle beam device adapted to place a sample in a non-vacuum environment, there is provided a filter member which is placed on the path of a primary charged particle beam at least in a state where the primary charged particle beam is directed to the sample and, further, is adapted to transmit or pass, therethrough, the primary charged particle beam and secondary charged particles derived from the sample, while intercepting at least a portion of a scattering substance which is scattered in the event of a fracture of the diaphragm.
摘要翻译：在能够在大气压下进行观察的SEM装置中，在样品观察期间膜片损伤的情况下，由于内部的压差，空气从样品附近流入带电粒子光学镜筒的带电粒子光学筒在真空下和样品在大气压附近。此时，样品可以被吸入带电粒子光学筒中。在这种情况下，带电粒子光学系统和检测器被污染，导致带电粒子显微镜的性能下降或失效。为了应对，需要以简单的结构防止带电粒子光学筒被污染，而不会引起时间滞后。在适于将样品置于非真空环境中的带电粒子束装置中，设置有过滤构件，其至少在初级带电粒子束被引导到样品，并且还适于透射或通过从样品衍生的初级带电粒子束和二次带电粒子，同时截留至少一部分在发生断裂的情况下散射的散射物质隔膜

5. 发明授权

US09281160B2 Insulation structure and insulation method 有权
标题翻译：绝缘结构和绝缘方法
公开(公告)号：US09281160B2
公开(公告)日：2016-03-08
申请号：US14291766
申请日：2014-05-30
申请人： SEN Corporation
发明人： Masateru Sato
IPC分类号： H01J37/08 , H01J37/02 , H01J27/02 , H01J37/317
CPC分类号： H01J37/08 , H01J27/024 , H01J37/3171 , H01J2237/0213 , H01J2237/022 , H01J2237/026 , H01J2237/032 , H01J2237/036 , H01J2237/038 , H01J2237/08 , H01J2237/31701
摘要： An insulation structure provided among a plurality of electrodes for extraction of an ion beam from a plasma generating section is provided. The insulation structure includes an insulation member including a first part connected to a first electrode and a second part connected to a second electrode and configured to support the first electrode to the second electrode, a first cover surrounding at least a part of the first part to protect the first part from contamination particles, and a second cover surrounding at least a part of the second part to protect the second part from contamination particles. At least one of the first part and the second part is made of a machinable ceramic or a porous ceramic.
摘要翻译：提供了一种绝缘结构，设置在用于从等离子体产生部分提取离子束的多个电极之间。绝缘结构包括绝缘构件，该绝缘构件包括连接到第一电极的第一部分和连接到第二电极的第二部分，并被配置为将第一电极支撑到第二电极，第一盖围绕第一部分的至少一部分，保护第一部分免受污染颗粒，以及围绕第二部分的至少一部分的第二盖，以保护第二部分免受污染颗粒。第一部分和第二部分中的至少一个由可机加工的陶瓷或多孔陶瓷制成。

6. 发明授权

US09275840B2 Method for providing uniform distribution of plasma density in a plasma treatment apparatus 有权
标题翻译：在等离子体处理装置中提供等离子体密度均匀分布的方法
公开(公告)号：US09275840B2
公开(公告)日：2016-03-01
申请号：US14164179
申请日：2014-01-25
申请人： Yuri Glukhoy
发明人： Yuri Glukhoy
IPC分类号： H01J37/32 , B05D7/22 , C23C14/08 , C23C16/40
CPC分类号： H01J37/32449 , B05D7/22 , C23C14/083 , C23C16/405 , H01J37/32091 , H01J37/32477 , H01J37/32807 , H01J2237/0213 , H01J2237/04 , Y10T29/4998
摘要： Proposed is a method for providing uniform distribution of plasma density in a CCP plasma processing apparatus. According to the method the through gas holes of the showerhead of used in the plasma processing chamber of the apparatus are provided with conical nozzles formed on the side of the gas holes that face the gas reservoir of the cooler plate. The cone angle θ of the nozzles decreases in the direction from the peripheral portion to the central area of the showerhead in the range from 120° to 0°. Since the conical nozzles increase the gas gap between the showerhead and the cooler plate, more favorable conditions are created for electric breakdown. In order to protect the surfaces of the conical nozzles and gas holes from deterioration by hollow cathode discharge, these surface are coated by a protective coating resistant to electrical breakdown and chemical corrosion.
摘要翻译：提出了一种在CCP等离子体处理装置中提供等离子体密度均匀分布的方法。根据该方法，在装置的等离子体处理室中使用的喷头的通气孔设置有形成在与冷却器板的气体储存器相对的气孔侧的锥形喷嘴。锥角与角度; 的喷嘴在从120°至0°的范围内从喷墨头的周边部分到中心区域的方向上减小。由于锥形喷嘴增加了淋浴头和冷却板之间的气隙，因此为电击穿创造了更有利的条件。为了保护锥形喷嘴和气孔的表面免受空心阴极放电的损坏，这些表面涂有耐电击穿和化学腐蚀的保护涂层。

7. 发明申请

US20160013011A1 ION IRRADIATION DEVICE AND ION IRRADIATION METHOD 审中-公开
标题翻译：离子辐照装置和离子辐射方法
公开(公告)号：US20160013011A1
公开(公告)日：2016-01-14
申请号：US14833533
申请日：2015-08-24
申请人： ULVAC, Inc.
发明人： Takumi YUZE , Toshihiro TERASAWA
IPC分类号： H01J37/04
CPC分类号： H01J37/04 , H01J37/09 , H01J37/1472 , H01J37/3171 , H01J2237/0213 , H01J2237/028 , H05H1/16 , H05H7/04
摘要： Positive ions that fly within an ion acceleration tube are accelerated by a plurality of acceleration electrodes arranged within the ion acceleration tube and are irradiated to an irradiation target. A plurality of magnet devices is arranged within the ion acceleration tube; the directions of the lines of magnetic force formed respectively by the magnet devices are made to differ between the adjacent magnet devices by an angle of more than 0 degree and at most 90 degrees or less; and each of the lines of magnetic force is rotated in one direction within the ion acceleration tube. Electrons travelling in reverse within the ion acceleration tube are made to intersect the lines of magnetic force, and made to increase a distance from a flying axis while traveling in reverse. Since the electrons collide with members within the ion acceleration tube and stop before having high energy, high-energy X-rays are not generated.
摘要翻译：在离子加速管内飞行的正离子被布置在离子加速管内的多个加速电极加速并照射到照射目标。多个磁体装置设置在离子加速管内; 使磁铁装置分别形成的磁力线的方向在相邻的磁体装置之间的角度大于0度，最大为90度以下; 并且每个磁力线在离子加速管内沿一个方向旋转。使离子加速管内的相反行进的电子与磁力线相交，并且在相反行进时增加与飞行轴的距离。由于电子与离子加速管内的构件碰撞并且在具有高能量之前停止，所以不产生高能X射线。

8. 发明授权

US09034743B2 Method for implant productivity enhancement 有权
标题翻译：植入生产力提高方法
公开(公告)号：US09034743B2
公开(公告)日：2015-05-19
申请号：US14090001
申请日：2013-11-26
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Peter F. Kurunczi , Bon-Woong Koo , John A. Frontiero , William T. Levay , Christopher J. Leavitt , Timothy J. Miller , Vikram M. Bhosle , John W. Graff , Nicholas P T Bateman
IPC分类号： H01L21/425 , H01L21/265
CPC分类号： H01L21/265 , H01J37/08 , H01J2237/0213 , H01J2237/0817 , H01J2237/31701
摘要： A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. The other species used during the conditioning process may be a Group 3, 4 or 5 element. The desired dopant species may be boron.
摘要翻译：公开了一种处理工件的方法，其中首先用所需的掺杂剂物质和另一种物质涂覆离子室。在这种调理过程之后，将包含氟和所需掺杂剂的原料气引入室并进行离子化。然后将离子从室中提取并加速到工件，在那里它们被植入而不被首先进行质量分析。在调理过程中使用的其他物质可以是第3,4或5族元素。所需的掺杂剂物质可以是硼。

9. 发明申请

US20140261173A1 ADJUSTABLE MASS RESOLVING APERTURE 有权
标题翻译：可调节质量的解决方案
公开(公告)号：US20140261173A1
公开(公告)日：2014-09-18
申请号：US14217064
申请日：2014-03-17
申请人： GLENN LANE FAMILY LIMITED LIABILITY LIMITED PARTNERSHIP
发明人： GLENN E. LANE
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01J37/3007 , C23C14/48 , C23C14/54 , H01J37/08 , H01J37/09 , H01J37/3171 , H01J49/062 , H01J49/26 , H01J2237/0213 , H01J2237/04 , H01J2237/0455 , H01J2237/152 , H01J2237/31701 , H01L21/265
摘要： Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ions species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (“CPC”) superconductor, or boson energy transmission system.
摘要翻译：本发明的实施例涉及可用于离子注入系统中的质量分辨孔径，该离子注入系统在离子束中基于质量比（和/或质量与电荷比）不理想地选择性地排除离子种类部件。本发明的实施例涉及一种质量分辨孔径，该质量分辨孔径被分段，可调节和/或呈现出将撞击孔的迎面而来的离子物质的曲面。本发明的实施例还涉及通过封闭等离子体通道（“CPC”）超导体或玻色子能量传输系统对带电粒子的流过滤。

10. 发明授权

US08592783B2 Titanium diboride coating for plasma processing apparatus 有权
标题翻译：用于等离子体处理设备的二硼化钛涂层
公开(公告)号：US08592783B2
公开(公告)日：2013-11-26
申请号：US13245035
申请日：2011-09-26
申请人： Kamal Hadidi , George D. Papasouliotis , Craig R. Chaney
发明人： Kamal Hadidi , George D. Papasouliotis , Craig R. Chaney
IPC分类号： G21K5/00
CPC分类号： C23C14/564 , C23C16/4404 , H01J37/3171 , H01J37/32477 , H01J2237/0213 , H01J2237/08 , H01J2237/16
摘要： An improved plasma processing chamber is disclosed, wherein some or all of the components which are exposed to the plasma are made of, or coated with, titanium diborane. Titanium diborane has a hardness in excess of 9 mhos, making it less susceptible to sputtering. In addition, titanium diborane is resistant to fluoride and chlorine ions. Finally, titanium diborane is electrically conductive, and therefore the plasma remains more uniform over time, as charge does not build on the surfaces of the titanium diborane components. This results in improved workpiece processing, with less contaminants and greater uniformity. In other embodiments, titanium diborane may be used to line components within a beam line implanter.
摘要翻译：公开了一种改进的等离子体处理室，其中暴露于等离子体的部分或全部组分由钛乙硼烷制成或涂覆。钛乙硼烷的硬度超过9毫摩尔，使其不易溅射。此外，乙硼烷钛耐氟化物和氯离子。最后，乙硼烷钛是导电的，因此随着时间的推移，等离子体保持更均匀，因为电荷不会在钛二硼烷组分的表面上形成。这导致改进的工件加工，更少的污染物和更大的均匀性。在其它实施方案中，可以使用乙硼烷钛来在束线注入机内引导组分。

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