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    • 3. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US08372239B2
    • 2013-02-12
    • US13449304
    • 2012-04-17
    • Takanori TsunodaYoshio MatsubaraYasunori AndoMasayuki Tsuji
    • Takanori TsunodaYoshio MatsubaraYasunori AndoMasayuki Tsuji
    • C23C16/00H01L21/306
    • H01J37/321H01J37/3211
    • An inductively-coupled-plasma (ICP) type plasma processing apparatus is provided. The plasma processing includes an antenna which is substantially straight in a plan view of the antenna. A plasma is generated for performing a plasma treatment to a substrate when a high frequency current is applied to the antenna to form an electric field in a vacuum container. The antenna includes two go-and-return conductors closely disposed to each other in an up-down direction, wherein the up-down direction is perpendicular to a surface of the substrate, and the high frequency current is applied to flow in opposite directions between the two go-and-return conductors. An interval is defined by a distance between the two go-and-return conductors in the up-down direction, varies in a longitudinal direction of the antenna.
    • 提供了一种电感耦合等离子体(ICP)型等离子体处理装置。 等离子体处理包括在天线的平面图中基本上是直的天线。 当对天线施加高频电流以在真空容器中形成电场时,产生等离子体,以对衬底进行等离子体处理。 该天线包括在上下方向上彼此紧密配置的两个去耦导体,其中上下方向垂直于衬底的表面,并且施加高频电流以在相对方向之间流动 两个回归导体。 间隔由上下方向上的两个去导体之间的距离限定,在天线的纵向方向上变化。
    • 4. 发明申请
    • PLASMA PROCESSING APPARATUS
    • 等离子体加工设备
    • US20120325404A1
    • 2012-12-27
    • US13449304
    • 2012-04-17
    • TAKANORI TSUNODAYOSHIO MATSUBARAYASUNORI ANDOMASAYUKI TSUJI
    • TAKANORI TSUNODAYOSHIO MATSUBARAYASUNORI ANDOMASAYUKI TSUJI
    • B05C9/00C23C14/34C23C16/50
    • H01J37/321H01J37/3211
    • An inductively-coupled-plasma (ICP) type plasma processing apparatus is provided. The plasma processing includes an antenna which is substantially straight in a plan view of the antenna. A plasma is generated for performing a plasma treatment to a substrate when a high frequency current is applied to the antenna to form an electric field in a vacuum container. The antenna includes two go-and-return conductors closely disposed to each other in an up-down direction, wherein the up-down direction is perpendicular to a surface of the substrate, and the high frequency current is applied to flow in opposite directions between the two go-and-return conductors. An interval is defined by a distance between the two go-and-return conductors in the up-down direction, varies in a longitudinal direction of the antenna.
    • 提供了一种电感耦合等离子体(ICP)型等离子体处理装置。 等离子体处理包括在天线的平面图中基本上是直的天线。 当对天线施加高频电流以在真空容器中形成电场时,产生等离子体,以对衬底进行等离子体处理。 该天线包括在上下方向上彼此紧密配置的两个去耦导体,其中上下方向垂直于衬底的表面,并且施加高频电流以在相对方向之间流动 两个回归导体。 间隔由上下方向上的两个去导体之间的距离限定,在天线的纵向方向上变化。
    • 5. 发明授权
    • Cache memory system, data processing apparatus, and storage apparatus
    • 高速缓冲存储器系统,数据处理装置和存储装置
    • US08230173B2
    • 2012-07-24
    • US12402114
    • 2009-03-11
    • Masayuki Tsuji
    • Masayuki Tsuji
    • G06F12/00
    • G06F12/0811G06F12/0802Y02D10/13
    • A cache memory system includes a plurality of first storage hierarchical units provided individually to a plurality of processors. A second storage hierarchical unit is provided commonly to the plurality of processors. A control unit controls data transfer between the plurality of first storage hierarchical units and the second storage hierarchical unit. Each of the plurality of processors is capable of executing a no-data transfer store command as a store command that does not require data transfer from the second storage hierarchical unit to the corresponding first storage hierarchical unit, and each of the plurality of first storage hierarchical units outputs a transfer-control signal in response to occurrence of a cache miss hit when executing the no-data transfer store command by the corresponding processor.
    • 高速缓冲存储器系统包括分别提供给多个处理器的多个第一存储分层单元。 第二存储分层单元被共同地提供给多个处理器。 控制单元控制多个第一存储分层单元和第二存储分层单元之间的数据传送。 多个处理器中的每一个能够执行无数据传输存储命令作为不需要从第二存储分层单元到相应的第一存储分层单元的数据传送的存储命令,并且多个第一存储分层 当由对应的处理器执行无数据传输存储命令时,单元响应于高速缓存未命中的发生而输出传送控制信号。
    • 7. 发明申请
    • LIQUID CRYSTAL DISPLAY PANEL AND METHOD FOR PRODUCING THE SAME
    • 液晶显示面板及其制造方法
    • US20110051069A1
    • 2011-03-03
    • US12942185
    • 2010-11-09
    • Naoshi YAMADAHidehiko YAMAGUCHIToshihide TSUBATAYukio KUROZUMIMasayuki TSUJI
    • Naoshi YAMADAHidehiko YAMAGUCHIToshihide TSUBATAYukio KUROZUMIMasayuki TSUJI
    • G02F1/1339
    • G02F1/1339G02F1/133351G02F2001/13415
    • The method of the present invention includes the steps of (A) providing a first substrate, and a second substrate, wherein the first substrate includes a first light shielding layer provided within a non-display region, the first light shielding layer including a light-transmitting portion provided near an outer boundary of the first light shielding layer, the light-transmitting portion comprising a recess or an opening; (B) drawing a seal pattern with a sealant, the seal pattern being drawn outside the first light shielding layer so as to surround the display region, comprising the substeps of: (B1) beginning application of the sealant near the light-transmitting portion, (B2) applying the sealant along an outer periphery of the first light shielding layer, and (B3) forming a junction with the sealant having been applied near the light-transmitting portion; (C) applying a liquid crystal material within the display region surrounded by the sealant; (D) attaching the first substrate and the second substrate; and (E) performing light irradiation from the first substrate side to cure the sealant.
    • 本发明的方法包括以下步骤:(A)提供第一衬底和第二衬底,其中第一衬底包括设置在非显示区域内的第一遮光层,第一遮光层包括发光层, 所述透光部设置在所述第一遮光层的外边界附近,所述透光部包括凹部或开口; (B)利用密封剂来绘制密封图案,密封图案被拉出到第一遮光层的外面以包围显示区域,包括以下子步骤:(B1)开始在透光部分附近施加密封剂, (B2)沿着所述第一遮光层的外周施加所述密封剂,和(B3)与所述密封剂形成与所述透光部附近的接合部; (C)在由密封剂包围的显示区域内施加液晶材料; (D)连接第一基板和第二基板; 和(E)从第一基板侧执行光照射以固化密封剂。