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1. 发明授权

US08901741B2 Interconnect structures with engineered dielectrics with nanocolumnar porosity 有权
标题翻译：互连结构与具有纳米柱孔隙度的工程电介质
公开(公告)号：US08901741B2
公开(公告)日：2014-12-02
申请号：US13531518
申请日：2012-06-23
申请人： Matthew E. Colburn , Satya V. Nitta , Sampath Purushothaman , Charles Black , Kathryn Guarini
发明人： Matthew E. Colburn , Satya V. Nitta , Sampath Purushothaman , Charles Black , Kathryn Guarini
IPC分类号： H01L23/522 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops of the hole array with a cap dielectric. Variations of the method and means to construct a multilevel nanocolumnar interconnect structure are also described.
摘要翻译：描述了一种形成具有纳米柱状金属间电介质的互连结构的方法，涉及使用固体电介质构造互连结构，并通过模板形成和蚀刻引入垂直排列的纳米尺度孔的规则阵列以形成孔阵列并随后夹紧具有盖电介质的孔阵列的顶部。还描述了构建多层纳米柱状互连结构的方法和方法的变化。

2. 发明授权

US08361704B2 Method for reducing tip-to-tip spacing between lines 有权
标题翻译：减少线间距尖端间距的方法
公开(公告)号：US08361704B2
公开(公告)日：2013-01-29
申请号：US12352051
申请日：2009-01-12
申请人： Matthew E. Colburn , Wai-kin Li , Haining S. Yang
发明人： Matthew E. Colburn , Wai-kin Li , Haining S. Yang
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： This invention provides a method for reducing tip-to-tip spacing between lines using a combination of photolithographic and copolymer self-assembling lithographic techniques. A mask layer is first formed over a substrate with a line structure. A trench opening of a width d is created in the mask layer. A layer of a self-assembling block copolymer is then applied over the mask layer. The block copolymer layer is annealed to form a single unit polymer block of a width or a diameter w which is smaller than d inside the trench opening. The single unit polymer block is selectively removed to form a single opening of a width or a diameter w inside the trench opening. An etch transfer process is performed using the single opening as a mask to form an opening in the line structure in the substrate.
摘要翻译：本发明提供了使用光刻和共聚物自组装光刻技术的组合来减少线之间的尖端到尖端间隔的方法。首先在具有线结构的衬底上形成掩模层。在掩模层中形成宽度为d的沟槽开口。然后将一层自组装嵌段共聚物施加在掩模层上。对嵌段共聚物层进行退火以在沟槽开口内形成宽度或直径w小于d的单一单元聚合物嵌段。选择性地去除单个单元聚合物嵌段以在沟槽开口内形成宽度或直径w的单个开口。使用单个开口作为掩模进行蚀刻转印处理，以在基板中的线结构中形成开口。

3. 发明授权

US08137893B2 Chemical trim of photoresist lines by means of a tuned overcoat 有权
标题翻译：通过调整的外涂层对光致抗蚀剂线进行化学修饰
公开(公告)号：US08137893B2
公开(公告)日：2012-03-20
申请号：US12983297
申请日：2011-01-01
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

4. 发明授权

US08129286B2 Reducing effective dielectric constant in semiconductor devices 有权
标题翻译：降低半导体器件中的有效介电常数
公开(公告)号：US08129286B2
公开(公告)日：2012-03-06
申请号：US12139803
申请日：2008-06-16
申请人： Daniel C. Edelstein , Matthew E. Colburn , Edward C. Cooney, III , Timothy J. Dalton , John A. Fitzsimmons , Jeffrey P. Gambino , Elbert E. Huang , Michael W. Lane , Vincent J. McGahay , Lee M. Nicholson , Satyanarayana V. Nitta , Sampath Purushothaman , Sujatha Sankaran , Thomas M. Shaw , Andrew H. Simon , Anthony K. Stamper
发明人： Daniel C. Edelstein , Matthew E. Colburn , Edward C. Cooney, III , Timothy J. Dalton , John A. Fitzsimmons , Jeffrey P. Gambino , Elbert E. Huang , Michael W. Lane , Vincent J. McGahay , Lee M. Nicholson , Satyanarayana V. Nitta , Sampath Purushothaman , Sujatha Sankaran , Thomas M. Shaw , Andrew H. Simon , Anthony K. Stamper
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： B82Y30/00 , H01L21/0332 , H01L21/31111 , H01L21/31144 , H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , Y10S438/947 , H01L2924/00
摘要： Method of manufacturing a semiconductor device structure, including the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.
摘要翻译：制造半导体器件结构的方法，包括以下步骤：提供具有至少一个互连的绝缘体层的结构，在该绝缘体层上形成次级光刻模板掩模，以及通过次级光刻模板掩模选择性地蚀刻绝缘体层以形成亚光刻特征跨越至少一个互连的侧壁。

5. 发明授权

US08053368B2 Method for removing residues from a patterned substrate 失效
标题翻译：从图案化衬底去除残留物的方法
公开(公告)号：US08053368B2
公开(公告)日：2011-11-08
申请号：US12055648
申请日：2008-03-26
申请人： Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
发明人： Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
IPC分类号： H01L21/311
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/40
摘要： The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC) over a substrate; providing a layer of a photoresist over said DBARC layer; pattern-wise exposing said photoresist layer and said DBARC layer to a radiation; developing said photoresist layer and said DBARC layer with a first developer to form patterned structures in said photoresist and DBARC layers; depositing a layer of a developer soluble material over said patterned structures; and removing said developer soluble material with a second developer.
摘要翻译：本发明涉及一种用于从图案化衬底的开放区域去除残留物的方法，包括以下步骤：在衬底上提供可显影抗反射涂层（DBARC）的层; 在所述DBARC层上提供一层光致抗蚀剂; 将所述光致抗蚀剂层和所述DBARC层图案化地曝光到辐射; 用第一显影剂显影所述光致抗蚀剂层和所述DBARC层以在所述光致抗蚀剂和DBARC层中形成图案化结构; 在所述图案化结构上沉积一层显影剂可溶性材料; 并用第二显影剂除去所述显影剂可溶性材料。

6. 发明授权

US08017194B2 Method and material for a thermally crosslinkable random copolymer 有权
标题翻译：用于热交联的无规共聚物的方法和材料
公开(公告)号：US08017194B2
公开(公告)日：2011-09-13
申请号：US12015825
申请日：2008-01-17
申请人： Matthew E. Colburn , Gregory Breyta
发明人： Matthew E. Colburn , Gregory Breyta
IPC分类号： B05D3/00
CPC分类号： C09D153/00 , C08F255/00 , C08F293/005 , C08L51/06 , C08L53/00 , Y10T428/24612 , Y10T428/261 , Y10T428/269 , Y10T428/31855 , Y10T428/31938 , C08L2666/02
摘要： A structure that comprises a substrate; a cross-linked random free radical copolymer on the substrate; and a self-assembled patterned diblock copolymer film on the random copolymer; wherein the random copolymer is energy neutral with respect to each block of the diblock copolymer film. A method of making the structure is provided.
摘要翻译：一种包括基底的结构; 基底上交联的无规自由基共聚物; 和无规共聚物上自组装图案化的二嵌段共聚物膜; 其中所述无规共聚物相对于所述二嵌段共聚物膜的每个嵌段是能量中和的。提供了制作该结构的方法。

7. 发明授权

US07993816B2 Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom 有权
标题翻译：使用自组装嵌段共聚物制造自对准纳米结构的方法，以及由其制造的结构
公开(公告)号：US07993816B2
公开(公告)日：2011-08-09
申请号：US12049780
申请日：2008-03-17
申请人： Charles T. Black , Matthew E. Colburn , David L. Rath
发明人： Charles T. Black , Matthew E. Colburn , David L. Rath
IPC分类号： G03F7/26
CPC分类号： G03F7/039 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： In one embodiment, the present invention provides a method for patterning a surface that includes forming a block copolymer atop a heterogeneous reflectivity surface, wherein the block copolymer is segregated into first and second units; applying a radiation to the first units and second units, wherein the heterogeneous reflectivity surface produces an exposed portion of the first units and the second units; and applying a development cycle to selectively remove at least one of the exposed first and second units of the segregated copolymer film to provide a pattern.
摘要翻译：在一个实施方案中，本发明提供了一种用于图案化表面的方法，其包括在异质反射表面之上形成嵌段共聚物，其中嵌段共聚物分离成第一和第二单元; 对所述第一单元和第二单元施加辐射，其中所述异质反射表面产生所述第一单元和所述第二单元的暴露部分; 并且施加开发周期以选择性地去除所述分离的共聚物膜的暴露的第一和第二单元中的至少一个以提供图案。

8. 发明申请

US20110045407A1 Functionalized Carbosilane Polymers and Photoresist Compositions Containing the Same 有权
标题翻译：官能化碳硅烷聚合物和含有它的光致抗蚀剂组合物
公开(公告)号：US20110045407A1
公开(公告)日：2011-02-24
申请号：US12938459
申请日：2010-11-03
申请人： Robert D. Allen , Matthew E. Colburn , Daniel P. Sanders , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert D. Allen , Matthew E. Colburn , Daniel P. Sanders , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03F7/004
CPC分类号： G03F7/0757 , C08G77/60 , G03F7/0046 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm−1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.
摘要翻译：提供了在193nm处具有小于3.0μm-1的吸光度和相对高折射率的线性或分支官能化聚碳硅烷。官能化聚碳硅烷含有至少一个酸不稳定或水溶性碱可溶的侧基。还公开了含有适用于光刻（例如浸渍光刻）的官能化聚碳硅烷的光致抗蚀剂制剂。

9. 发明授权

US07862989B2 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning 有权
公开(公告)号：US07862989B2
公开(公告)日：2011-01-04
申请号：US12228010
申请日：2008-08-07
申请人： Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
发明人： Matthew E. Colburn , Kenneth Raymond Carter , Gary M. McClelland , Dirk Pfeiffer
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76817 , H01L2924/0002 , Y10S425/81 , Y10T428/16 , Y10T428/24851 , Y10T428/31504 , H01L2924/00
摘要： The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

10. 发明授权

US07862982B2 Chemical trim of photoresist lines by means of a tuned overcoat material 有权
标题翻译：通过调谐的外涂层材料对光致抗蚀剂线进行化学修饰
公开(公告)号：US07862982B2
公开(公告)日：2011-01-04
申请号：US12137743
申请日：2008-06-12
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

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