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    • 1. 发明授权
    • Current stimulator
    • 当前刺激器
    • US08892202B2
    • 2014-11-18
    • US13439365
    • 2012-04-04
    • Chun-Yu LinYi-Ju LiMing-Dou Ker
    • Chun-Yu LinYi-Ju LiMing-Dou Ker
    • A61N1/08A61N1/18
    • A61N1/025A61N1/36125H01L2924/0002H01L2924/00
    • The disclosure relates to a current stimulator, which comprises a high voltage output module, a voltage control module and a charge pump module. The high voltage output module includes a plurality of stacked transistors, and receives an input control signal able to turn on/off the current stimulator and a first voltage. A second voltage is generated by adding the voltages output by all the transistors to the first voltage and then output to the voltage control module. The voltage control module outputs a voltage control signal able to stabilize the stimulus current for the load according to the second voltage and the load impedance variation. The charge pump regulates the first voltage according to the voltage control signal, and outputs the regulated first voltage to the high voltage output module. Thereby, the current stimulator can adaptively stabilize the stimulus current, responding to load impedance variation.
    • 本公开涉及一种电流刺激器,其包括高压输出模块,电压控制模块和电荷泵模块。 高电压输出模块包括多个堆叠的晶体管,并且接收能够接通/关断电流刺激器的输入控制信号和第一电压。 通过将由所有晶体管输出的电压加到第一电压然后输出到电压控制模块来产生第二电压。 电压控制模块根据第二电压和负载阻抗变化输出能够稳定负载的刺激电流的电压控制信号。 电荷泵根据电压控制信号调节第一电压,并将调节的第一电压输出到高电压输出模块。 因此,电流刺激器可以自适应地稳定刺激电流,响应于负载阻抗变化。
    • 2. 发明授权
    • Load-adaptive bioelectric current stimulator
    • 负载自适应生物电流刺激器
    • US08527061B2
    • 2013-09-03
    • US13224166
    • 2011-09-01
    • Ming-Dou KerWei-Ling ChenChun-Yu Lin
    • Ming-Dou KerWei-Ling ChenChun-Yu Lin
    • A61N1/08
    • A61N1/36521
    • The disclosure relates to a load-adaptive bioelectrical current stimulator, which comprises a current output module, an adaptation module and a control module. The current output module generates a stimulus current to an electrode. The adaptation module detects the electrical status of the stimulus current passing through the electrode and generates a feedback signal to the control module. According to the feedback signal, the control module controls the current output module to stabilize the output status of the stimulus current adaptively. Thereby, the load-adaptive bioelectrical current stimulator can use the feedback control mechanism to regulate the value of the stimulus current to adapt to variation of load impedance.
    • 本公开涉及一种负载自适应生物电流电流刺激器,其包括电流输出模块,适配模块和控制模块。 电流输出模块产生到电极的刺激电流。 适配模块检测通过电极的刺激电流的电气状态,并产生一个到控制模块的反馈信号。 根据反馈信号,控制模块控制电流输出模块,自适应地稳定激励电流的输出状态。 因此,负载自适应生物电流电流刺激器可以使用反馈控制机制来调节刺激电流的值以适应负载阻抗的变化。
    • 3. 发明申请
    • CURRENT STIMULATOR
    • 电流刺激仪
    • US20130172958A1
    • 2013-07-04
    • US13439365
    • 2012-04-04
    • Chun-Yu LinYi-ju LiMing-Dou Ker
    • Chun-Yu LinYi-ju LiMing-Dou Ker
    • A61N1/36
    • A61N1/025A61N1/36125H01L2924/0002H01L2924/00
    • The disclosure relates to a current stimulator, which comprises a high voltage output module, a voltage control module and a charge pump module. The high voltage output module includes a plurality of stacked transistors, and receives an input control signal able to turn on/off the current stimulator and a first voltage. A second voltage is generated by adding the voltages output by all the transistors to the first voltage and then output to the voltage control module. The voltage control module outputs a voltage control signal able to stabilize the stimulus current for the load according to the second voltage and the load impedance variation. The charge pump regulates the first voltage according to the voltage control signal, and outputs the regulated first voltage to the high voltage output module. Thereby, the current stimulator can adaptively stabilize the stimulus current, responding to load impedance variation.
    • 本公开涉及一种电流刺激器,其包括高压输出模块,电压控制模块和电荷泵模块。 高电压输出模块包括多个堆叠的晶体管,并且接收能够接通/关断电流刺激器的输入控制信号和第一电压。 通过将由所有晶体管输出的电压加到第一电压然后输出到电压控制模块来产生第二电压。 电压控制模块根据第二电压和负载阻抗变化输出能够稳定负载的刺激电流的电压控制信号。 电荷泵根据电压控制信号调节第一电压,并将调节的第一电压输出到高电压输出模块。 因此,电流刺激器可以自适应地稳定刺激电流,响应于负载阻抗变化。
    • 8. 发明授权
    • ESD detection circuit and related method thereof
    • ESD检测电路及其相关方法
    • US07884617B2
    • 2011-02-08
    • US12334496
    • 2008-12-14
    • Ming-Dou KerPo-Yen ChiuChun Huang
    • Ming-Dou KerPo-Yen ChiuChun Huang
    • H01H31/02
    • H02H9/046
    • An electro-static discharge (ESD) detection circuit is provided. The ESD detection circuit includes: a first power pad for receiving a first supply voltage; a second power pad for receiving a second supply voltage; an RC circuit having an impedance component coupled between the first power pad and a first terminal and having an capacitive component coupled between the first terminal and a second terminal, wherein the second terminal is not directly connected to the second supply voltage; a trigger circuit couples to the first power pad, the second power pad, and the RC circuit, for generating an ESD trigger signal according to a voltage level at the first terminal and a voltage level at the second terminal, and a bias circuit coupled between the first power pad and the second power pad for providing a bias voltage to the second terminal.
    • 提供静电放电(ESD)检测电路。 ESD检测电路包括:用于接收第一电源电压的第一电源焊盘; 用于接收第二电源电压的第二电源焊盘; RC电路,其阻抗分量耦合在第一功率焊盘和第一端子之间,并具有耦合在第一端子和第二端子之间的电容部件,其中第二端子不直接连接到第二电源电压; 触发电路耦合到第一功率焊盘,第二功率焊盘和RC电路,用于根据第一端子处的电压电平和第二端子处的电压电平产生ESD触发信号,以及耦合在第二端子之间的偏置电路 所述第一功率垫和所述第二功率垫用于向所述第二端子提供偏置电压。
    • 9. 发明授权
    • Electrostatic discharge protection device and related circuit
    • 静电放电保护装置及相关电路
    • US07880195B2
    • 2011-02-01
    • US12329636
    • 2008-12-08
    • Ming-Dou KerYuan-Wen HsiaoChang-Tzu Wang
    • Ming-Dou KerYuan-Wen HsiaoChang-Tzu Wang
    • H01L29/66
    • H01L27/0262
    • An ESD protection device comprises a P-type substrate, a first substrate-triggered silicon controlled rectifiers (STSCR) disposed in the P-type substrate and a second STSCR disposed in the P-type substrate. The first STSCR comprises a first N-well, a first P-well, a first N+ diffusion region, a first P+ diffusion region, and a first trigger node. The second STSCR comprises a second N-well electrically connected to the first N-well, a second P-well electrically connected to the first P-well, a second N+ diffusion region electrically connected to the first P+ diffusion region, a second P+ diffusion region electrically connected to the first N+ diffusion region, and a second trigger node. A layout area of an integrated circuit and a pin-to-pin ESD current path can be reduced.
    • ESD保护装置包括P型衬底,设置在P型衬底中的第一衬底触发的可控硅整流器(STSCR)和设置在P型衬底中的第二STSCR。 第一STSCR包括第一N阱,第一P阱,第一N +扩散区,第一P +扩散区和第一触发节点。 第二STSCR包括电连接到第一N阱的第二N阱,电连接到第一P阱的第二P阱,电连接到第一P +扩散区的第二N +扩散区,第二P +扩散 电连接到第一N +扩散区域的区域和第二触发器节点。 可以减小集成电路的布局区域和引脚到针脚ESD电流路径。
    • 10. 发明申请
    • INITIAL-ON SCR DEVICE FOR ON-CHIP ESD PROTECTION
    • 用于片上ESD保护的初始化SCR器件
    • US20110013326A1
    • 2011-01-20
    • US12891474
    • 2010-09-27
    • Ming-Dou KerShih-Hung ChenKun-Hsien Lin
    • Ming-Dou KerShih-Hung ChenKun-Hsien Lin
    • H02H9/04H01L27/06
    • H01L23/62H01L27/0262H01L2924/0002H01L2924/00
    • A semiconductor device for electrostatic discharge (ESD) protection comprises a silicon controlled rectifier (SCR) including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, a first p-type region formed in the first well to serve as an anode, and a first n-type region partially formed in the second well to serve as a cathode, a p-type metal-oxide-semiconductor (PMOS) transistor formed in the first well including a gate, a first diffused region and a second diffused region separated apart from the first diffused region, a second n-type region formed in the first well electrically connected to the first diffused region of the PMOS transistor, and a second p-type region formed in the substrate electrically connected to the second diffused region of the PMOS transistor.
    • 一种用于静电放电(ESD)保护的半导体器件包括可控硅整流器(SCR),其包括半导体衬底,形成在衬底中的第一阱,在衬底中形成的第二阱,形成在第一阱中的第一p型区 用作阳极,以及部分地形成在第二阱中用作阴极的第一n型区域,形成在包括栅极的第一阱中的p型金属氧化物半导体(PMOS)晶体管,第一扩散层 区域和与第一扩散区域分离的第二扩散区域,形成在电连接到PMOS晶体管的第一扩散区域的第一阱中的第二n型区域和形成在衬底中的第二p型区域电连接 到PMOS晶体管的第二扩散区域。